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Stephan Menzel
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2020 – today
- 2024
- [j22]Leon Brackmann
, Tobias Ziegler, Atousa Jafari, Dirk J. Wouters, Mehdi B. Tahoori, Stephan Menzel
Improved Arithmetic Performance by Combining Stateful and Non-Stateful Logic in Resistive Random Access Memory 1T-1R Crossbars. Adv. Intell. Syst. 6(3) (2024) - [c39]Daniel Schön, Stephan Menzel:
Understanding the Thermal Aspects in Dense RRAM Memory Arrays. IMW 2024: 1-4 - [c38]Feng Liu, Xianyue Zhao, Ziang Chen, Christopher Bengel, Nan Du
Realization of Reading-based Ternary Łukasiewicz Logic using Memristive Devices. ISCAS 2024: 1-5 - [i7]Zhenming Yu, Stephan Menzel, John Paul Strachan, Emre Neftci:
Integration of Physics-Derived Memristor Models with Machine Learning Frameworks. CoRR abs/2403.06746 (2024) - [i6]Tyler Hennen, Leon Brackmann, Tobias Ziegler, Sebastian Siegel, Stephan Menzel, Rainer Waser, Dirk J. Wouters, Daniel Bedau:
Synaptogen: A cross-domain generative device model for large-scale neuromorphic circuit design. CoRR abs/2404.06344 (2024) - [i5]Chandan Singh, Vasileios G. Ntinas, Dimitrios A. Prousalis, Yongmin Wang, Ahmet Samil Demirkol, Ioannis Messaris, Vikas Rana, Stephan Menzel, Alon Ascoli, Ronald Tetzlaff:
Employing Vector Field Techniques on the Analysis of Memristor Cellular Nonlinear Networks Cell Dynamics. CoRR abs/2408.03260 (2024) - 2023
- [j21]Carsten Funck
A Physical Description of the Variability in Single-ReRAM Devices and Hardware-Based Neuronal Networks. Adv. Intell. Syst. 5(11) (2023) - [j20]Christopher Bengel, Leon Dixius, Rainer Waser, Dirk J. Wouters, Stephan Menzel:
Bit slicing approaches for variability aware ReRAM CIM macros. it Inf. Technol. 65(1-2): 3-12 (2023) - [j19]Milan Buttberg
Simulating the filament morphology in electrochemical metallization cells. Neuromorph. Comput. Eng. 3(2): 24010 (2023) - [j18]Christopher Bengel
Ternary Łukasiewicz logic using memristive devices. Neuromorph. Comput. Eng. 3(4): 44001 (2023) - [j17]Seokki Son
A Study of the Electroforming Process in 1T1R Memory Arrays. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 42(2): 558-568 (2023) - [c37]Feng Liu, Xianyue Zhao, Ziang Chen, Christopher Bengel, Nan Du
Realization of Ternary Łukasiewicz Logic using BiFeO3-based Memristive Devices. ICECS 2023: 1-4 - [c36]Tobias Ziegler, Leon Brackmann
Eliminating Capacitive Sneak Paths in Associative Capacitive Networks based on Complementary Resistive Switches for In-Memory Computing. IMW 2023: 1-4 - [c35]Donato Francesco Falcone, Stephan Menzel, Tommaso Stecconi, Antonio La Porta, Ludovico Carraria-Martinotti, Bert Jan Offrein, Valeria Bragaglia:
Physical modeling and design rules of analog Conductive Metal Oxide-HfO2 ReRAM. IMW 2023: 1-4 - [c34]Leon Brackmann, Tobias Ziegler, Atousa Jafari, Dirk J. Wouters, Mehdi B. Tahoori, Stephan Menzel:
Design Limitations in Oxide-Based Memristive Ternary Content Addressable Memories. ISCAS 2023: 1-5 - [c33]Vasileios G. Ntinas, Yongmin Wang, Ahmet Samil Demirkol
Design and Analysis of Isolated Voltage-Mode Memristor Cellular Nonlinear Network Cells. ISCAS 2023: 1-5 - [c32]Nicolas Schmitt, Alon Ascoli, Ioannis Messaris, Ahmet Samil Demirkol
Exploration of Bistable Oscillatory Dynamics in a Memristor from Forschungszentrum Jülich. MOCAST 2023: 1-6 - [c31]Simranjeet Singh
Exploring Multi-Valued Logic and its Application in Emerging Post-CMOS Technologies. NANOARCH 2023: 30:1-30:7 - [c30]Yongmin Wang
Experimental Verification of Uncoupled Memristive Cellular Nonlinear Network by Processing the EDGE Detection Task. NANOARCH 2023: 36:1-36:7 - [c29]Christopher Bengel, Anteneh Gebregiorgis, Stephan Menzel, Rainer Waser, Georgi Gaydadjiev, Said Hamdioui:
Devices and Architectures for Efficient Computing In-Memory (CIM) Design. SAMOS 2023: 437-450 - [c28]Vasileios G. Ntinas, Dharmik Patel, Yongmin Wang, Ioannis Messaris, Vikas Rana, Stephan Menzel, Alon Ascoli, Ronald Tetzlaff
A Simplified Variability-Aware VCM Memristor Model for Efficient Circuit Simulation. SMACD 2023: 1-4 - [e1]Ronald Tetzlaff, Fernando Corinto, Neil Kemp, Alon Ascoli, Andreas Mögel, Meng-Fan Marvin Chang, Joseph S. Friedman, Siting Liu, John Paul Strachan, Stephan Menzel, Mehdi B. Tahoori, Martin Ziegler, Jason Eshraghian, Ioannis Messaris, Christian Koitzsch, Thomas Mikolajick, Vasileios G. Ntinas:
Proceedings of the 18th ACM International Symposium on Nanoscale Architectures, NANOARCH 2023, Dresden, Germany, December 18-20, 2023. ACM 2023 [contents] - 2022
- [j16]Nils Kopperberg
Endurance of 2 Mbit Based BEOL Integrated ReRAM. IEEE Access 10: 122696-122705 (2022) - [j15]Mahta Mayahinia, Abhairaj Singh, Christopher Bengel
A Voltage-Controlled, Oscillation-Based ADC Design for Computation-in-Memory Architectures Using Emerging ReRAMs. ACM J. Emerg. Technol. Comput. Syst. 18(2): 32:1-32:25 (2022) - [j14]Mahdi Zahedi
MNEMOSENE: Tile Architecture and Simulator for Memristor-based Computation-in-memory. ACM J. Emerg. Technol. Comput. Syst. 18(3): 44:1-44:24 (2022) - [j13]Dennis V. Christensen
2022 roadmap on neuromorphic computing and engineering. Neuromorph. Comput. Eng. 2(2): 22501 (2022) - [j12]Christopher Bengel
Reliability aspects of binary vector-matrix-multiplications using ReRAM devices. Neuromorph. Comput. Eng. 2(3): 34001 (2022) - [j11]Vasileios G. Ntinas
Toward Simplified Physics-Based Memristor Modeling of Valence Change Mechanism Devices. IEEE Trans. Circuits Syst. II Express Briefs 69(5): 2473-2477 (2022) - [c27]Zhenming Yu, Stephan Menzel, John Paul Strachan, Emre Neftci:
Integration of Physics-Derived Memristor Models with Machine Learning Frameworks. IEEECONF 2022: 1142-1146 - [c26]Melvin Galicia, Stephan Menzel, Farhad Merchant, Maximilian Müller, Hsin-Yu Chen, Qing-Tai Zhao, Felix Cüppers, Abdur R. Jalil
NEUROTEC I: Neuro-inspired Artificial Intelligence Technologies for the Electronics of the Future. DATE 2022: 957-962 - [c25]Felix Staudigl, Hazem Al Indari, Daniel Schön
NeuroHammer: Inducing Bit-Flips in Memristive Crossbar Memories. DATE 2022: 1181-1184 - [c24]Rana Walied Ahmad
Analysis of VMM Operations on 1S1R Crossbar Arrays and the Influence of Wire Resistances. ISCAS 2022: 91-95 - [c23]Yongmin Wang, Alon Ascoli, Ronald Tetzlaff
Performance Analysis of Memristive-CNN based on a VCM Device Model. ISCAS 2022: 1184-1188 - [c22]Christopher Bengel
Experimental and Theoretical Analysis of Stateful Logic in Passive and Active Crossbar Arrays for Computation-in-Memory. ISCAS 2022: 2792-2796 - [c21]Leon Brackmann
A failure analysis framework of ReRAM In-Memory Logic operations. ITC-Asia 2022: 67-72 - [c20]Hao Cai, Ziang Chen
Realization of Memristor-aided Logic Gates with Analog Memristive Devices. MOCAST 2022: 1-4 - 2021
- [j10]Letícia Maria Veiras Bolzani
Review of Manufacturing Process Defects and Their Effects on Memristive Devices. J. Electron. Test. 37(4): 427-437 (2021) - [c19]Alon Ascoli, Ronald Tetzlaff
System Theory Enables a Deep Exploration of ReRAM Cells' Switching Phenomena. ICECS 2021: 1-6 - [c18]Konstantinos Oikonomou
A Machine Learning Model for Predicting Fetal Hemoglobin Levels in Sickle Cell Disease Patients. ICICT (1) 2021: 79-91 - [c17]Christopher Bengel
Implementation of Multinary Łukasiewicz Logic Using Memristive Devices. ISCAS 2021: 1-5 - [i4]Dennis V. Christensen, Regina Dittmann, Bernabé Linares-Barranco, Abu Sebastian, Manuel Le Gallo, Andrea Redaelli, Stefan Slesazeck, Thomas Mikolajick, Sabina Spiga, Stephan Menzel, Ilia Valov, Gianluca Milano, Carlo Ricciardi, Shi-Jun Liang, Feng Miao, Mario Lanza, Tyler J. Quill
2021 Roadmap on Neuromorphic Computing and Engineering. CoRR abs/2105.05956 (2021) - [i3]Felix Staudigl, Hazem Al Indari, Daniel Schön, Dominik Sisejkovic, Farhad Merchant, Jan Moritz Joseph, Vikas Rana, Stephan Menzel, Rainer Leupers:
NeuroHammer: Inducing Bit-Flips in Memristive Crossbar Memories. CoRR abs/2112.01087 (2021) - 2020
- [j9]Tobias Ziegler
In-Memory Binary Vector-Matrix Multiplication Based on Complementary Resistive Switches. Adv. Intell. Syst. 2(10): 2000134 (2020) - [j8]Tobias Ziegler
In-Memory Binary Vector-Matrix Multiplication Based on Complementary Resistive Switches. Adv. Intell. Syst. 2(10): 2070100 (2020) - [j7]Christopher Bengel
Variability-Aware Modeling of Filamentary Oxide-Based Bipolar Resistive Switching Cells Using SPICE Level Compact Models. IEEE Trans. Circuits Syst. 67-I(12): 4618-4630 (2020) - [c16]Camilla La Torre, Andreas Kindsmüller, Seokki Son, Rainer Waser, Vikas Rana, Stephan Menzel:
A Compact Model for the Electroforming Process of Memristive Devices. ECCTD 2020: 1-4
2010 – 2019
- 2019
- [c15]Anne Siemon, Dirk J. Wouters, Said Hamdioui, Stephan Menzel:
Memristive Device Modeling and Circuit Design Exploration for Computation-in-Memory. ISCAS 2019: 1-5 - 2018
- [j6]Debjyoti Bhattacharjee
Kogge-Stone Adder Realization using 1S1R Resistive Switching Crossbar Arrays. ACM J. Emerg. Technol. Comput. Syst. 14(2): 30:1-30:14 (2018) - [c14]Stephan Menzel, Anne Siemon, Alon Ascoli, Ronald Tetzlaff
Requirements and Challenges for Modelling Redox-based Memristive Devices. ISCAS 2018: 1-5 - [c13]Carsten Funck, C. Baumer, Regina Dittmann, Manfred Martin
Atomistic Investigation of the Schottky Contact Conductance Limits at SrTiO3 based Resistive Switching Devices. NVMTS 2018: 1-4 - [c12]Andreas Kindsmüller, Alexander Schönhals, Stephan Menzel, Regina Dittmann, Rainer Waser, Dirk J. Wouters:
The influence of interfacial (sub)oxide layers on the properties of pristine resistive switching devices. NVMTS 2018: 1-4 - 2017
- [c11]Wilhelm Stehling, Elhameh Abbaspour, Christoph Jungemann
Kinetic Monte Carlo modeling of the charge transport in a HfO2-based ReRAM with a rough anode. NVMTS 2017: 1-4 - [c10]Moritz von Witzleben
Thermal effects on the I-V characteristics of filamentary VCM based ReRAM-cells using a nanometer-sized heater. NVMTS 2017: 1-5 - [c9]Stephan Menzel, Rainer Waser, Anne Siemon, Camilla La Torre, M. Schulten, Alon Ascoli, Ronald Tetzlaff
On the origin of the fading memory effect in ReRAMs. PATMOS 2017: 1-5 - 2016
- [c8]Karsten Fleck, Ulrich Böttger, Rainer Waser
Energy dissipation during pulsed switching of strontium-titanate based resistive switching memory devices. ESSDERC 2016: 160-163 - [c7]Wonjoo Kim, Dirk J. Wouters, Stephan Menzel, Christian Rodenbucher, Rainer Waser, Vikas Rana:
Lowering forming voltage and forming-free behavior of Ta2O5 ReRAM devices. ESSDERC 2016: 164-167 - [c6]Debjyoti Bhattacharjee
Efficient implementation of multiplexer and priority multiplexer using 1S1R ReRAM crossbar arrays. MWSCAS 2016: 1-4 - 2015
- [j5]Anne Siemon, Stephan Menzel
A Complementary Resistive Switch-Based Crossbar Array Adder. IEEE J. Emerg. Sel. Topics Circuits Syst. 5(1): 64-74 (2015) - [j4]Lutz Nielen
Study of Memristive Associative Capacitive Networks for CAM Applications. IEEE J. Emerg. Sel. Topics Circuits Syst. 5(2): 153-161 (2015) - [c5]Anne Siemon, Stephan Menzel, Rainer Waser
Controllability of multi-level states in memristive device models using a transistor as current compliance during SET operation. IJCNN 2015: 1-8 - [c4]Anne Siemon, Stephan Menzel, Anupam Chattopadhyay, Rainer Waser
In-memory adder functionality in 1S1R arrays. ISCAS 2015: 1338-1341 - 2014
- [j3]S. Ferch, Eike Linn, Rainer Waser
Simulation and comparison of two sequential logic-in-memory approaches using a dynamic electrochemical metallization cell model. Microelectron. J. 45(11): 1416-1428 (2014) - [j2]Eike Linn, Anne Siemon, Rainer Waser
Applicability of Well-Established Memristive Models for Simulations of Resistive Switching Devices. IEEE Trans. Circuits Syst. I Regul. Pap. 61-I(8): 2402-2410 (2014) - [c3]Anne Siemon, Stephan Menzel
Simulation of TaOx-based complementary resistive switches by a physics-based memristive model. ISCAS 2014: 1420-1423 - [c2]Stephan Menzel:
Modeling and simulation of electrochemical metallization memory cells. ISCAS 2014: 2025-2028 - [i2]Eike Linn, Anne Siemon, Rainer Waser, Stephan Menzel:
Applicability of Well-Established Memristive Models for Simulations of Resistive Switching Devices. CoRR abs/1403.5801 (2014) - [i1]Anne Siemon, Stephan Menzel, Rainer Waser, Eike Linn:
A Complementary Resistive Switch-based Crossbar Array Adder. CoRR abs/1410.2031 (2014) - 2012
- [c1]Rainer Waser
Recent progress in redox-based resistive switching. ISCAS 2012: 1596-1599 - 2010
- [j1]Victor V. Zhirnov, Ralph K. Cavin III, Stephan Menzel
Memory Devices: Energy-Space-Time Tradeoffs. Proc. IEEE 98(12): 2185-2200 (2010)
Coauthor Index
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