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Microelectronics Reliability, Volume 59
Volume 59, April 2016
- Ee-Hua Wong
, W. D. van Driel
Creep fatigue models of solder joints: A critical review. 1-12 - Donghee Son, Gang-Jun Kim, Ji-Hoon Seo, Nam-Hyun Lee, YongHa Kang, Bongkoo Kang:
Degradation of pMOSFETs due to hot electron induced punchthrough. 13-17 - Evgeny Pikhay
Degradation study of single poly radiation sensors by monitoring charge trapping. 18-25 - Nebojsa D. Jankovic, Chadwin D. Young
Experimental Evaluation of Circuit-Based Modeling of the NBTI Effects in Double-Gate FinFETs. 26-29 - Ping Wang, Yiqi Zhuang, Cong Li, Zhi Jiang
Drain current model for double-gate tunnel field-effect transistor with hetero-gate-dielectric and source-pocket. 30-36 - Chang Bum Park, HyungIl Na, Soon Sung Yoo, Kwon-Shik Park:
Electrical characteristics of a-IGZO transistors along the in-plane axis during outward bending. 37-43 - Hsien-Chin Chiu
The ESD protection characteristic and low-frequency noise analysis of GaN Schottky barrier diode with fluorine-based plasma treatment. 44-48 - Jianping Zhang
An improved modeling for life prediction of high-power white LED based on Weibull right approximation method. 49-54 - Jian Guan, Shuxu Guo, Jin-Yuan Wang, Min Tao, Junsheng Cao, Fengli Gao
Analysis of origin of measured 1/f noise in high-power semiconductor laser diodes far below threshold current. 55-59 - Ákos Nemcsics, Bálint Podör, Lajos Tóth, János Balázs, László Dobos, János Makai, Márton Csutorás, Antal Ürmös
Investigation of MBE grown inverted GaAs quantum dots. 60-63 - Chang-Woo Han, Seung-Boong Jeong, Myung-Do Oh:
Thermo-fluid simulation for the thermal design of the IGBT module in the power conversion system. 64-72 - Mohd. Amir Eleffendi, Li Yang, Pearl A. Agyakwa
Quantification of cracked area in thermal path of high-power multi-chip modules using transient thermal impedance measurement. 73-83 - Hsien-Chie Cheng, Tzu-Chin Huang, Po-Wen Hwang, Wen-Hwa Chen:
Heat dissipation assessment of through silicon via (TSV)-based 3D IC packaging for CMOS image sensing. 84-94 - Wei Feng, Naoya Watanabe
Validation of TSV thermo-mechanical simulation by stress measurement. 95-101 - Houman Zahedmanesh, Mario Gonzalez, Ivan Ciofi, Kristof Croes, Jürgen Bömmels, Zsolt Tökei
Design considerations for the mechanical integrity of airgaps in nano-interconnects under chip-package interaction; a numerical investigation. 102-107 - Aidan Cowley
B-Spline X-Ray Diffraction Imaging - Rapid non-destructive measurement of die warpage in ball grid array packages. 108-116 - M. T. Zarmai, Ndy N. Ekere, C. F. Oduoza, Emeka H. Amalu:
Optimization of thermo-mechanical reliability of solder joints in crystalline silicon solar cell assembly. 117-125 - Elaheh Arjmand
A thermal cycling reliability study of ultrasonically bonded copper wires. 126-133 - Masaki Ohyama, Masatsugu Nimura, Jun Mizuno, Shuichi Shoji, Toshihisa Nonaka, Yoichi Shinba, Akitsu Shigetou:
Evaluation of hybrid bonding technology of single-micron pitch with planar structure for 3D interconnection. 134-139
- Chong Leong Gan
Book Review: Fundamentals of Bias Temperature Instability in MOS Transistors. Springer (2016). 140
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