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The results indicate that the 1/f noise from the active region can be measured under bias currents far lower than the threshold currents of the LDs, and it can ...
Sep 18, 2020 · The results indicate that the 1/. f noise from the active region can be measured under bias currents far lower than the threshold currents of ...
The 1/f noise is measured under the bias one tenth the threshold current of the InGaAs quantum well high-power semiconductor laser diodes (LDs).
Analysis of origin of measured 1/f noise in high-power semiconductor laser diodes far below threshold current · Jian Guan, Shuxu Guo, +3 authors. Fengli Gao ...
Analysis of origin of measured 1/f noise in high-power semiconductor laser diodes far below threshold current. Guan, J.; S. X. Guo; J. Y. Wang; M. Tao; ...
Analysis of origin of measured 1/ f noise in high-power semiconductor laser diodes far below threshold current ; 2016. DOI: 10.1016/j.microrel.2015.12.029
The 1/f noise is measured under the bias one tenth the threshold current of the InGaAs quantum well high-power semiconductor laser diodes (LDs).
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... Analysis of origin of measured 1/f noise in high-power semiconductor laser diodes far below threshold current,” Microelectron. Reliab., Papers 59, 55-59 ...
Jan 14, 2020 · We present a 1/ f noise model of 980 nm InGaAs/GaAs laser diodes (LDs) operated below the lasing threshold to study the correlation between ...
May 15, 2024 · I'd like to design a low noise current source to power a single frequency laser diode. This laser diode is very sensitive to current noise.