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"Improved universal MOSFET electron mobility degradation models for circuit ..."

C. Patrick Yue et al. (1993)

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DOI: 10.1109/43.256929

access: closed

type: Journal Article

metadata version: 2020-09-24

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  - https://dblp.org/rec/journals/tcad/YueAYT93
C. Patrick Yue, Victor Martin Agostinelli Jr., Gregory Munson Yeric, A. F. Tasch Jr.:
Improved universal MOSFET electron mobility degradation models for circuit simulation. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 12(10): 1542-1546 (1993)

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