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Pascal Dherbécourt
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2020 – today
- 2020
- [j7]Al Mehdi Bouchour, Ahmed El Oualkadi, Olivier Latry, Pascal Dherbécourt, Andres F. Echeverri:
Estimation of losses of GaN HEMT in power switching applications based on experimental characterization. Comput. Electr. Eng. 84: 106622 (2020) - [j6]Wadia Jouha, Ahmed El Oualkadi, Pascal Dherbécourt, Mohamed Masmoudi, Eric Joubert:
In-depth analysis of the static behaviour of a SiC MOSFET and of its associated parameters using both compact modelling and physical simulation. IET Circuits Devices Syst. 14(2): 222-228 (2020)
2010 – 2019
- 2018
- [j5]Jian-Zhi Fu, François Fouquet, Moncef Kadi, Pascal Dherbécourt:
Evolution of C-V and I-V characteristics for a commercial 600 V GaN GIT power device under repetitive short-circuit tests. Microelectron. Reliab. 88-90: 652-655 (2018) - 2017
- [j4]Safa Mbarek, Pascal Dherbécourt, Olivier Latry, François Fouquet:
Short-circuit robustness test and in depth microstructural analysis study of SiC MOSFET. Microelectron. Reliab. 76-77: 527-531 (2017) - 2016
- [j3]Safa Mbarek, François Fouquet, Pascal Dherbécourt, Mohamed Masmoudi, Olivier Latry:
Gate oxide degradation of SiC MOSFET under short-circuit aging tests. Microelectron. Reliab. 64: 415-418 (2016) - 2014
- [c1]Pascal Dherbécourt, Olivier Latry, Eric Joubert, Karine Dehais-Mourgues, Hichame Maanane, Jean Pierre Sipma, Philippe Eudeline:
A workbench development for L-band LDMOS amplifier reliability study (electronic power transistors reliabilty for radar applications). ICMCS 2014: 1573-1578 - 2011
- [j2]Loïc Lachèze, Olivier Latry, Pascal Dherbécourt, Karine Mourgues, V. Purohit, Hichame Maanane, Jean Pierre Sipma, F. Cornu, Philippe Eudeline:
Characterization and modeling of hot carrier injection in LDMOS for L-band radar application. Microelectron. Reliab. 51(8): 1289-1294 (2011) - 2010
- [j1]Olivier Latry, Pascal Dherbécourt, Karine Mourgues, Hichame Maanane, Jean Pierre Sipma, F. Cornu, Philippe Eudeline, Mohamed Masmoudi:
A 5000 h RF life test on 330 W RF-LDMOS transistors for radars applications. Microelectron. Reliab. 50(9-11): 1574-1576 (2010)
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