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Karine Mourgues
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2010 – 2019
- 2011
- [j9]Loïc Lachèze, Olivier Latry, Pascal Dherbécourt, Karine Mourgues, V. Purohit, Hichame Maanane, Jean Pierre Sipma, F. Cornu, Philippe Eudeline:
Characterization and modeling of hot carrier injection in LDMOS for L-band radar application. Microelectron. Reliab. 51(8): 1289-1294 (2011) - 2010
- [j8]Olivier Latry, Pascal Dherbécourt, Karine Mourgues, Hichame Maanane, Jean Pierre Sipma, F. Cornu, Philippe Eudeline, Mohamed Masmoudi:
A 5000 h RF life test on 330 W RF-LDMOS transistors for radars applications. Microelectron. Reliab. 50(9-11): 1574-1576 (2010)
2000 – 2009
- 2007
- [j7]Mohamed Ali Belaïd, K. Ketata, Karine Mourgues, M. Gares, Mohamed Masmoudi, Jérôme Marcon:
Reliability study of power RF LDMOS device under thermal stress. Microelectron. J. 38(2): 164-170 (2007) - [j6]Mohamed Ali Belaïd, K. Ketata, M. Gares, Karine Mourgues, Mohamed Masmoudi, Jérôme Marcon:
Comparative analysis of RF LDMOS capacitance reliability under accelerated ageing tests. Microelectron. Reliab. 47(1): 59-64 (2007) - [j5]M. Gares, Mohamed Ali Belaïd, Hichame Maanane, Mohamed Masmoudi, Jérôme Marcon, Karine Mourgues, Philippe Eudeline:
Study of hot-carrier effects on power RF LDMOS device reliability. Microelectron. Reliab. 47(9-11): 1394-1399 (2007) - 2006
- [j4]Hichame Maanane, Mohamed Masmoudi, Jérôme Marcon, Mohamed Ali Belaïd, Karine Mourgues, C. Tolant, K. Ketata, Philippe Eudeline:
Study of RF N- LDMOS critical electrical parameter drifts after a thermal and electrical ageing in pulsed RF. Microelectron. Reliab. 46(5-6): 994-1000 (2006) - [j3]M. Gares, Hichame Maanane, Mohamed Masmoudi, Pierre Bertram, Jérôme Marcon, Mohamed Ali Belaïd, Karine Mourgues, C. Tolant, Philippe Eudeline:
Hot carrier reliability of RF N- LDMOS for S Band radar application. Microelectron. Reliab. 46(9-11): 1806-1811 (2006) - [c1]M. Gares, Hichame Maanane, Mohamed Ali Belaïd, Mohamed Masmoudi, Jérôme Marcon, Karine Mourgues, Pierre Bertram, Philippe Eudeline:
Impact de la Temperature sur la Fiabilite des Composants rf Ldmos de Puissance. CCECE 2006: 382-385 - 2005
- [j2]Mohamed Ali Belaïd, K. Ketata, Karine Mourgues, Hichame Maanane, Mohamed Masmoudi, Jérôme Marcon:
Comparative analysis of accelerated ageing effects on power RF LDMOS reliability. Microelectron. Reliab. 45(9-11): 1732-1737 (2005) - 2004
- [j1]Hichame Maanane, Pierre Bertram, Jérôme Marcon, Mohamed Masmoudi, Mohamed Ali Belaïd, Karine Mourgues, Philippe Eudeline, K. Ketata:
Reliability study of Power RF LDMOS for Radar Application. Microelectron. Reliab. 44(9-11): 1449-1454 (2004)
Coauthor Index
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