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"Origin of hot carrier degradation in advanced nMOSFET devices."

B. Cretu et al. (2002)

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DOI: 10.1016/S0026-2714(02)00159-2

access: closed

type: Journal Article

metadata version: 2023-09-30

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  - https://dblp.org/rec/journals/mr/CretuBGG02
B. Cretu, Francis Balestra, Gérard Ghibaudo, G. Guégan:
Origin of hot carrier degradation in advanced nMOSFET devices. Microelectron. Reliab. 42(9-11): 1405-1408 (2002)

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