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Yong-Hun Kim
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Journal Articles
- 2024
- [j14]Hyun-A. Ahn
, Yoo-Chang Sung, Yong-Hun Kim, Janghoo Kim, Kihan Kim
A 1.01-V 8.5-Gb/s/pin 16-Gb LPDDR5x SDRAM With Advanced I/O Circuitry for High-Speed and Low-Power Applications. IEEE J. Solid State Circuits 59(10): 3479-3487 (2024) - 2023
- [j13]Daewoong Lee
A 16-Gb T-Coil-Based GDDR6 DRAM With Merged-MUX TX, Optimized WCK Operation, and Alternative-Data-Bus Achieving 27-Gb/s/Pin in NRZ. IEEE J. Solid State Circuits 58(1): 279-290 (2023) - 2020
- [j12]Daewoong Lee
A 10.8 Gb/s Quarter-Rate 1 FIR 1 IIR Direct DFE With Non-Time-Overlapping Data Generation for 4: 1 CMOS Clockless Multiplexer. IEEE Trans. Circuits Syst. II Express Briefs 67-II(1): 67-71 (2020) - 2019
- [j11]Young-Ju Kim, Hye-Jung Kwon, Su-Yeon Doo, Min-Su Ahn, Yong-Hun Kim, Yong Jae Lee, Dong-Seok Kang, Sung-Geun Do, Chang-Yong Lee, Gun-hee Cho, Jae-Koo Park, Jae-Sung Kim, Kyung-Bae Park, Seung-Hoon Oh, Sang-Yong Lee, Ji-Hak Yu, Ki-Hun Yu, Chul-Hee Jeon, Sang-Sun Kim, Hyun-Soo Park, Jeong-Woo Lee, Seung-Hyun Cho, Keon-Woo Park, Yong-Jun Kim, Young-Hun Seo, Chang-Ho Shin, ChanYong Lee, Sam-Young Bang, Youn-Sik Park, Seouk-Kyu Choi, Byung-Cheol Kim, Gong-Heum Han, Seung-Jun Bae, Hyuk-Jun Kwon, Jung-Hwan Choi, Young-Soo Sohn, Kwang-Il Park, Seong-Jin Jang, Gyo-Young Jin:
A 16-Gb, 18-Gb/s/pin GDDR6 DRAM With Per-Bit Trainable Single-Ended DFE and PLL-Less Clocking. IEEE J. Solid State Circuits 54(1): 197-209 (2019) - [j10]Chongsoo Jung
A 12 Gb/s 1.59 mW/Gb/s Input-Data-Jitter-Tolerant Injection-Type CDR With Super-Harmonic Injection-Locking in 65-nm CMOS. IEEE Trans. Circuits Syst. II Express Briefs 66-II(12): 1972-1976 (2019) - [j9]Daewoong Lee
A 0.9-V 12-Gb/s Two-FIR Tap Direct DFE With Feedback-Signal Common-Mode Control. IEEE Trans. Very Large Scale Integr. Syst. 27(3): 724-728 (2019) - 2018
- [j8]Yong-Hun Kim
A 10-Gb/s Reference-Less Baud-Rate CDR for Low Power Consumption With the Direct Feedback Method. IEEE Trans. Circuits Syst. II Express Briefs 65-II(11): 1539-1543 (2018) - [j7]Dongil Lee
A 0.65-V, 11.2-Gb/s Power Noise Tolerant Source-Synchronous Injection-Locked Receiver With Direct DTLB DFE. IEEE Trans. Circuits Syst. II Express Briefs 65-II(11): 1564-1568 (2018) - 2017
- [j6]Yong-Hun Kim, Taeho Lee, Hyun-Kyu Jeon, Dongil Lee, Lee-Sup Kim:
An Input Data and Power Noise Inducing Clock Jitter Tolerant Reference-Less Digital CDR for LCD Intra-Panel Interface. IEEE Trans. Circuits Syst. I Regul. Pap. 64-I(4): 823-835 (2017) - [j5]Taeho Lee
A 5-Gb/s Digital Clock and Data Recovery Circuit With Reduced DCO Supply Noise Sensitivity Utilizing Coupling Network. IEEE Trans. Very Large Scale Integr. Syst. 25(1): 380-384 (2017) - 2016
- [j4]Sang-Hye Chung, Young-Ju Kim, Yong-Hun Kim, Lee-Sup Kim:
A 10-Gb/s 0.71-pJ/bit Forwarded-Clock Receiver Tolerant to High-Frequency Jitter in 65-nm CMOS. IEEE Trans. Circuits Syst. II Express Briefs 63-II(3): 264-268 (2016) - [j3]Yong-Hun Kim, Young-Ju Kim, Taeho Lee, Lee-Sup Kim:
A 21-Gbit/s 1.63-pJ/bit Adaptive CTLE and One-Tap DFE With Single Loop Spectrum Balancing Method. IEEE Trans. Very Large Scale Integr. Syst. 24(2): 789-793 (2016) - [j2]Taeho Lee, Yong-Hun Kim, Jaehyeong Sim
A 5-Gb/s 2.67-mW/Gb/s Digital Clock and Data Recovery With Hybrid Dithering Using a Time-Dithered Delta-Sigma Modulator. IEEE Trans. Very Large Scale Integr. Syst. 24(4): 1450-1459 (2016) - 2015
- [j1]Yong-Hun Kim, Young-Ju Kim, Tae-Ho Lee, Lee-Sup Kim:
An 11.5 Gb/s 1/4th Baud-Rate CTLE and Two-Tap DFE With Boosted High Frequency Gain in 110-nm CMOS. IEEE Trans. Very Large Scale Integr. Syst. 23(3): 588-592 (2015)
Conference and Workshop Papers
- 2023
- [c9]Hyun-A. Ahn, Yoo-Chang Sung, Yong-Hun Kim, Janghoo Kim, Kihan Kim, Donghun Lee, Young-Gil Go, Jae-Woo Lee, Jae-Woo Jung, Yong-Hyun Kim, Garam Choi, Jun-Seo Park, Bo-Hyeon Lee, Jin-Hyeok Baek, Daesik Moon, Daihyun Lim, Seung-Jun Bae, Young-Soo Sohn, Changsik Yoo, Tae-Young Oh:
A 1.01V 8.5Gb/s/pin 16Gb LPDDR5x SDRAM with Self-Pre-Emphasized Stacked-Tx, Supply Voltage Insensitive Rx, and Optimized Clock Using 4th-Generation 10nm DRAM Process for High-Speed and Low-Power Applications. A-SSCC 2023: 1-4 - 2022
- [c8]Daewoong Lee, Hye-Jung Kwon, Daehyun Kwon, Jaehyeok Baek, Chulhee Cho
A 16Gb 27Gb/s/pin T-coil based GDDR6 DRAM with Merged-MUX TX, Optimized WCK Operation, and Alternative-Data-Bus. ISSCC 2022: 446-448 - [c7]Dae-Hyun Kim
A 16Gb 9.5Gb/S/pin LPDDR5X SDRAM With Low-Power Schemes Exploiting Dynamic Voltage-Frequency Scaling and Offset-Calibrated Readout Sense Amplifiers in a Fourth Generation 10nm DRAM Process. ISSCC 2022: 448-450 - 2021
- [c6]Yong-Hun Kim, Hyung-Jin Kim, Jaemin Choi, Min-Su Ahn, Dongkeon Lee, Seung-Hyun Cho, Dong-Yeon Park, Young-Jae Park, Min-Soo Jang, Yong-Jun Kim, Jinyong Choi, Sung-Woo Yoon, Jae-Woo Jung, Jae-Koo Park, Jae-Woo Lee, Dae-Hyun Kwon, Hyung-Seok Cha, Si-Hyeong Cho, Seong-Hoon Kim, Jihwa You, Kyoung-Ho Kim, Dae-Hyun Kim, Byung-Cheol Kim, Young-Kwan Kim, Jun-Ho Kim, Seouk-Kyu Choi, Chanyoung Kim, Byongwook Na, Hye-In Choi, Reum Oh, Jeong-Don Ihm, Seung-Jun Bae, Nam Sung Kim, Jung-Bae Lee:
25.2 A 16Gb Sub-1V 7.14Gb/s/pin LPDDR5 SDRAM Applying a Mosaic Architecture with a Short-Feedback 1-Tap DFE, an FSS Bus with Low-Level Swing and an Adaptively Controlled Body Biasing in a 3rd-Generation 10nm DRAM. ISSCC 2021: 346-348 - 2019
- [c5]Daewoong Lee, Dongil Lee, Yong-Hun Kim, Lee-Sup Kim:
A 0.87 V 12.5 Gb/s Clock-Path Feedback Equalization Receiver with Unfixed Tap Weighting Property in 65 nm CMOS. VLSI Circuits 2019: 196- - 2018
- [c4]Young-Ju Kim, Hye-Jung Kwon, Su-Yeon Doo, Yoon-Joo Eom, Young-Sik Kim, Min-Su Ahn, Yong-Hun Kim, Sang-Hoon Jung, Sung-Geun Do, Chang-Yong Lee, Jae-Sung Kim, Dong-Seok Kang, Kyung-Bae Park, Jung-Bum Shin, Jong-Ho Lee, Seung-Hoon Oh, Sang-Yong Lee, Ji-Hak Yu, Ji-Suk Kwon, Ki-Hun Yu, Chul-Hee Jeon, Sang-Sun Kim, Min-Woo Won, Gun-hee Cho, Hyun-Soo Park, Hyung-Kyu Kim, Jeong-Woo Lee, Seung-Hyun Cho, Keon-Woo Park, Jae-Koo Park, Yong Jae Lee, Yong-Jun Kim, Young-Hun Seo, Beob-Rae Cho, Chang-Ho Shin, ChanYong Lee, YoungSeok Lee, Yoon-Gue Song, Sam-Young Bang, Youn-Sik Park, Seouk-Kyu Choi, Byeong-Cheol Kim, Gong-Heum Han, Seung-Jun Bae, Hyuk-Jun Kwon, Jung-Hwan Choi, Young-Soo Sohn, Kwang-Il Park, Seong-Jin Jang:
A 16Gb 18Gb/S/pin GDDR6 DRAM with per-bit trainable single-ended DFE and PLL-less clocking. ISSCC 2018: 204-206 - 2015
- [c3]Dongil Lee, Taeho Lee, Yong-Hun Kim, Young-Ju Kim, Lee-Sup Kim:
An injection locked PLL for power supply variation robustness using negative phase shift phenomenon of injection locked frequency divider. CICC 2015: 1-4 - [c2]Daewoong Lee, Dongil Lee, Taeho Lee, Yong-Hun Kim, Lee-Sup Kim:
An integrated time register and arithmetic circuit with combined operation for time-domain signal processing. ISCAS 2015: 1830-1833 - 2012
- [c1]Yong-Hun Kim, Lee-Sup Kim:
A 20 Gbps 1-tap decision feedback equalizer with unfixed tap coefficient. ISCAS 2012: 321-324
Coauthor Index
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