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DRC 2018: Santa Barbara, CA, USA
- 76th Device Research Conference, DRC 2018, Santa Barbara, CA, USA, June 24-27, 2018. IEEE 2018, ISBN 978-1-5386-3027-3
- Cameron J. Foss, Zlatan Aksamija
:
Quantifying the thermal boundary conductance of 2D-substrate interfaces. 1-2 - Yury Yu. Illarionov
Annealing and Encapsulation of CVD-MoS2 FETs with 1010On/Off Current Ratio. 1-2 - Hongwei Zhao, Sergio Pinna, Bowen Song, Ludovico Megalini, Simone Tommaso Suran Brunelli, Larry Coldren, Jonathan Klamkin:
3 Gbps Free Space Optical Link based on Integrated Indium Phosphide Transmitter. 1-2 - Svenja Mauthe, Heinz Schmid, B. Mayer, S. Wirths, Clarissa Convertino, Yannick Baumgartner, Lukas Czornomaz, Marilyne Sousa, P. Staudinger, Heike Riel, Kirsten E. Moselund
Monolithic Integration of III -V on silicon for photonic and electronic applications. 1-2 - Ifat Jahangir, Md. Ahsan Uddin, A. K. Singh, A. Franken, M. V. S. Chandrashekha, Goutam Koley:
Surface Passivated InN Nanowire and Graphene Heterojunction Based Memtransistor. 1-2 - Steven G. Noyce
Bias Stress Stability of Carbon Nanotube Transistors with Implications for Sensors. 1-2 - D. Fadi, Wei Wei, Emiliano Pallecchi, M. Anderson, J. Stake, Marina Deng
2D RF Electronics: from devices to circuits - challenges and applications. 1-2 - Giovanni V. Resta, Yashwanth Balaji
Doping-free complementary inverter enabled by 2D WSe2 electrostatically-doped reconfigurable transistors. 1-2 - Hojoon Ryu, Kai Xu, Ji Guo, Wenjuan Zhu:
Ferroelectric Aluminum-Doped Hafnium Oxide for Memory Applications. 1-2 - D. A. J. Millar, X. Li, U. Peralagu, M. J. Steer, I. M. Pavey, Guilherme Gaspar
High Aspect Ratio Junctionless InGaAs FinFETs Fabricated Using a Top-Down Approach. 1-2 - Kexin Li, Shaloo Rakheja:
A unified current-voltage and charge-voltage model of quasi-ballistic III-nitride HEMTs for RF applications. 1-2 - John W. Murphy, Clint D. Frye
Three-Dimensionally Structured Betavoltaics. 1-2 - Akash A. Laturia, Maarten L. Van De Put
Modeling of electron transport in nanoribbon devices using Bloch waves. 1-2 - Younghun Jung, Min Sup Choi, Abhinandan Borah, Ankur Nipane, Won Jong Yoo
Reliable High-Quality Metal-Embedded h-BN Contacts to p-type WSe2. 1-2 - Stephanie M. Bohaichuk, Miguel Munoz-Rojo
Low Power Nanoscale Switching of VO2using Carbon Nanotube Heaters. 1-2 - Jiancheng Yang, Fan Ren, Marko J. Tadjer, Stephen J. Pearton
2.3 kV Field-Plated Vertical Ga2O3 Schottky Rectifiers and 1 a Forward Current with 650 V Reverse Breakdown Ga2O3 Field-Plated Schottky Barrier Diodes. 1-2 - Benjamin Grisafe, Suman Datta
Investigation of Threshold Switch OFF -State Resistance on Performance Enhancement in 2D Mos2 Phase-FETs. 1-2 - Akio Takatsuka, Kohei Sasaki, Daiki Wakimoto, Quang Tu Thieu, Yuki Koishikawa, Jun Arima, Jun Hirabayashi, Daisuke Inokuchi, Yoshiaki Fukumitsu, Akito Kuramata, Shigenobu Yamakoshi:
Fast Recovery Performance of β-Ga2O3 Trench MOS Schottky Barrier Diodes. 1-2 - Matthew Jerry, Jeffrey A. Smith, Kai Ni, Atanu Saha, Sumeet Kumar Gupta, Suman Datta
Insinhts on the DC Characterization of Ferroelectric Field-Effect-Transistors. 1-2 - Gang Qiu
High-Performance Few-Layer Tellurium CMOS Devices Enabled by Atomic Layer Deposited Dielectric Doping Technique. 1-2 - Natasha Goyal, David M. A. Mackenzie, Himani Jawa
Thermally Aided Nonvolatile Memory Using ReS2 Transistors. 1-2 - Connor J. McClellan, Eilam Yalon
Sub-Thermionic Steep Switching in Hole-Doped WSe2 Transistors. 1-2 - K. R. Khiangte Amlta, A. Laha, S. Mahapatra, U. Gangway:
Epitaxial Gd2O3on Si (111) Substrate by Sputtering to Enable Low Cost SOI. 1-2 - Sohya Kudoh, Shun'ichiro Ohmi:
Multi-level 2-bit/cell operation utilizing Hf-based MONOS nonvolatile memory. 1-2 - Ahmedullah Aziz
A Three-Terminal Edge-Triggered Mott Switch. 1-2 - Clarissa C. Prawoto, Suwen Li, Mansun Chan:
CMOS Technology with Integrated Carbon-Nanotube Contact Plugs. 1-2 - Muhammad Mustafa Hussain
Manufacturable Heterogeneous Integration for Flexible CMOS Electronics. 1-2 - Tanmay Chavan, S. Dutta, Nihar R. Mohapatra, Udayan Ganguly:
An Ultra Energy Efficient Neuron enabled by Tunneling in Sub-threshold Regime on a Highly Manufacturable 32 nm SOI CMOS Technology. 1-2 - Niharika Thakuria, Daniel Schulman, Saptarshi Das, Sumeet Kumar Gupta:
2- Transistor Schmitt Trigger based on 2D Electrostrictive Field Effect Transistors. 1-2 - Takao Ono, Takuya Kawata, Yasushi Kanai
High-Sensitive and Selective Detection of Human-Infectious Influenza Virus Using Biomimetic Graphene Field-Effect Transistor. 1-2 - S. Riazimeher, Satender Kataria, J. M. Gonzalez, M. Shaygan, Stephan Suckow, Olof Engström, F. J. G. Ruiz, A. Godoy, Max Christian Lemme
Redefining Responsivity in Graphene-based Schottky Diodes. 1-2 - Isha M. Datye, Miguel Munoz-Rojo
Localized Heating in Mo'I'ei-Based Resistive Memory Devices. 1-2 - Tianning Liu, Jeong Nyeon Kim, Susan E. Trolier-McKinstry, Thomas N. Jackson:
Flexible Thin-Film PZT Ultrasonic Transducers. 1-2 - Ke Zeng, Abhishek Vaidya
710 V Breakdown Voltage in Field Plated Ga203 MOSFET. 1-2 - Chin-Sheng Pang, Zhihong Chen
First Demonstration of WSe2 CMOS Inverter with Modulable Noise Margin by Electrostatic Doping. 1-2 - Jeffrey A. Smith, Hideki Takeuchi, Robert Stephenson, Yi-Ann Chen, Marek Hytha, Robert J. Mears, Suman Datta
Experimental Investigation of N-Channel Oxygen-Inserted (OI) Silicon Channel MOSFETs with High-K/Metal Gate Stack. 1-2 - C. Klinkert, A. Szabo, D. Campi, C. Stieger, Nicola Marzari
Novel 2-D Materials for Tunneling FETs: an Ab-initio Study. 1-2 - Markus Hellenbrand
Effect of Gate Oxide Defects on Tunnel Transistor RF Performance. 1-2 - J. Gao, Y. Jin, B. Xie, C. P. Wen, Y. Hao, M. Wang:
GaN Lateral Schottky Diodes with High Baliga's Figure-of-Merit Utilizing Self-Terminated, Low Damage Anode Recessing Technology. 1-2 - Peng Wu
High Performance Complementary Black Phosphorus FETs and Inverter Circuits Operating at Record-Low VDD down to 0.2V. 1-2 - Patrick Waltereit
A homogeneous and reproducible large-area, low dispersion GaN-on-Si normally-off 600 V transistor technology using selective GaN etching. 1-2 - Soaram Kim, Sean Gorman, Yongchang Dong, Apparao M. Rao, Goutam Koley:
Self-powered Flexible Strain Sensor with Graphene/P(VDF-TrFE) Heterojunction. 1-2 - Handan Yildirim, Ruth Pachter:
Mechanistic Analysis of Oxygen Vacancy Driven Conductive Filament Formation in Resistive Random Access Memory Metal/NiO/Metal Structures. 1-2 - Punyashloka Debashis, Zhihong Chen
Tunable Random Number Generation Using Single Superparamagnet with Perpendicular Magnetic Anisotropy. 1-2 - Hao Xue, Towhidur Razzak
All MOCVD grown 250 nm gate length Al0.70Ga0.30N MESFETs. 1-2 - Maik Simon
A wired-AND transistor: Polarity controllable FET with multiple inputs. 1-2 - Yuhan Shi, Sangheon Oh, Xin Liu
Drift-enhanced Unsupervised Learning with PCM Synapses. 1-2 - Ali Razavieh, Y. Deng, Peter Zeitzoff, M. R. Na, J. Frougier, Gauri Karve, D. E. Brown, T. Yamashita, Edward J. Nowak:
Effective Drive Current in Scaled FinFET and NSFET CMOS Inverters. 1-2 - Hirokjyoti Kalita, Adithi Krishnaprasad, Nitin Choudhary, Sonali Das, Hee-Suk Chung, Yeonwoong Jung, Tania Roy:
Artificial Neuron using MoS2/Graphene Threshold Switching Memristors. 1-2 - Karan Mehta, Yuh-Shiuan Liu, Jialin Wang
Theory and Design of Electron Blocking Layers for III-N Based Laser Diodes by Numerical Simulation. 1-2 - Maud Vinet, Louis Hutin, Benoit Bertrand, Heorhii Bohuslavskyi, Andrea Corna, Anthony Amisse, Alessandro Crippa
Towards scalable silicon quantum computing. 1-2 - Stephane Boubanga-Tombet, Deepika Yadav, Wojciech Knap
Graphene-Channel-Transistor Terahertz Amplifier. 1-2 - Sanchit Deshmukh
Probing Self-Heating in RRAM Devices by Sub-100 nm Spatially Resolved Thermometry. 1-2 - Ting Wu, Abdullah Alharbi, Takashi Taniguchi, Kenji Watanabe, Davood Shahrjerdi:
Effects of single vacancy defects on 1/f noise in grapbene/b-BN FETs. 1-2 - Shabnam Ghotbi, Hossein Pajouhi, Saeed Mohammadi:
A Vacuum Multi-Finger Transistor in CMOS Technology. 1-2 - Jinhyun Noh, Mengwei Si, Hong Zhou, Marko J. Tadjer, Peide D. Ye:
The Impact of Substrates on the Performance of Top-Gate p-Ga203 Field-Effect Transistors: Record High Drain Current of 980 mA/mm on Diamond. 1-2 - Sara E. Harrison, Qinghui Shao
1.1 kV vertical p-i-n GaN-on-sapphire diodes. 1-2 - Mina Asghari Heidarlou, B. Jariwala, Paolo Paletti
Supercapacity (>1000 fJF/cm2) charge release in a CVD-grown WSe2 FET incorporating a PEO: CsCI04 side gate. 1-2 - Pai-Ying Liao, Mengwei Si, Gang Qiu
2D Ferroelectric CuInP2S6: Synthesis, ReRAM, and FeRAM. 1-2 - Songtao Liu
9 GHz passively mode locked quantum dot lasers directly grown on Si. 1-2 - Shlomo Mehari
Optical Gain and Loss Measurements of Semipolar III-nitride Laser Diodes with ITO/thin-p-GaN Cladding Layers. 1-2 - Yuqi Zhu, Feng Zhang, Jörg Appenzeller:
Thickness Tunable Transport Properties in MoTe2 Field Effect Transistors. 1-2 - Adane K. Geremew, Matthew A. Bloodgood
Unique Features of Electron Transport and Low-Frequency Noise in Quasi-One-Dimensional ZrTe3 van der Waals Nanoribbons. 1-2 - Dasheng Li, Georg Ramer
Nanoscale Scanning Probe Thermometry of TaOe-based selector devices. 1-2 - Shubhadeep Bhattacharjee
High Performance, Sub-thermionic MoS2 Transistors using Tunable Schottky Contacts. 1-2 - B. Jayant Baliga:
Silicon Carbide Power Devices: A 35 Year Journey from Conception to Commercialization. 1-2 - Mahesh R. Neupane, Dmitry Ruzmetov, Robert Burke, A. Glen Birdwell, Decarlos Taylor, Matthew Chin, Terrance O'Regan, Frank Crowne, Barbara Nichols, Pankaj Shah
Challenges and opportunities in integration of 2D materials on 3D substrates: Materials and device perspectives. 1-2 - Zheshun Xiong
Color-Filtered Si Photodiode Array for On-Chip Calcium Imaging in Living Cells. 1-2 - Hyunik Park, Jinho Bae, Jihyun Kim:
High performance black phosphorus field-effect transistors with vacuum-annealed low-resistance Ohmic contact. 1-2 - Michael Hoffmann, Stefan Slesazeck, Thomas Mikolajick
Domain Formation in Ferroelectric Negative Capacitance Devices. 1-2 - Sami Alghamdi
Time Response of Polarization Switching in Ge Hafnium Zirconium Oxide Nanowire Ferroelectric Field-effect Transistors. 1-2 - Shubhadeep Bhattacharjee
Optoelectronics based on Vertical Transport in Multi-layer MoS2. 1-2 - Alexander Chaney, Henryk Turski
Realization of the First GaN Based Tunnel Field-Effect Transistor. 1-3 - Nikita A. Butakov, Mark Knight, Tomer Lewi, Prasad P. Iyer
Electrically Switchable Infrared Nanophotonic Devices with VO2. 1-2 - Yuewei Zhang, Zhanbo Xia, Chandan Joishi, Siddharth Rajan
Design and Demonstration of (AlxGal-x)2O3/Ga2O3Double Heterostructure Field Effect Transistor (DHFET). 1-2 - Marko J. Tadjer, Travis J. Anderson, James C. Gallagher, Peter E. Raad
Thermal Performance Improvement of GaN-on-Diamond High Electron Mobility Transistors. 1-2 - Vihar P. Georgiev:
Development of hierarchical simulation framework for design and optimization of molecular based flash cell. 1-2 - Joel Molina Reyes
Room temperature resonant tunneling in metal-insulator-insulator-insulator-semiconductor devices. 1-2 - Jae Yoon Lee, Youngmin Kim, Ikhyeon Kworn, Il Hwan Cho, Jae Yeon Lee, Soo Gil Kim, Seongjae Cho:
Fabrication and Characterization of a Fully Si Compatible Forming-Free GeOxResistive Switching Random-Access Memory. 1-2 - Ahmedullah Aziz
Cockcroft-Walton Multiplier based on Unipolar Ag/HfO2/Pt Threshold Switch. 1-2 - Himadri Pandey
All CVD Boron Nitride Encapsulated Graphene FETs. 1-2 - P. J. Cegielski, S. Neutzner, C. Porschatis, M. Gandini, Daniel Schall, Carlo Andrea Riccardo Perini
Efficient Metal-Halide Perovskite Micro Disc Lasers Integrated in a Silicon Nitride Photonic Platform. 1-2 - Atanu K. Saha, Sumeet Kumar Gupta:
Modeling and Comparative Analysis of Hysteretic Ferroelectric and Anti-ferroelectric FETs. 1-2 - Jorge A. Cardenas, Sophia Upshaw, Matthew J. Catenaccr, Benjamin J. Wiley, Aaron D. Franklin:
Exploring Silver Contact Morphologies in Printed Carbon Nanotube Thin-Film Transistors. 1-2 - Sandeep Krishna Thirumala, Sumeet Kumar Gupta:
Gate Leakage in Non-Volatile Ferroelectric Transistors: Device-Circuit Implications. 1-2 - Junrui Zhang, Francesco Bellando, Maneesha Rupakula, Erick Garcia Cordero, N. Ebejer, J. Longo, Fabien Wildhaber, Hoel Guerin, Adrian Mihai Ionescu:
CMOS 3D-Extended Metal Gate ISFETs with Near Nernstian Ion Sensitivity. 1-2 - Qiming Shao, Guoqiang Yu
Large Room Temperature Charge-to-Spin Conversion Efficiency in Topological Insulator/CoFeB bilayers. 1-2 - Sizhen Wang, Alex Q. Huang
High Voltage Vertical Gallium Nitride Pseudo-Junction-Barrier-Schottky Diode with Ion Implantation. 1-2 - Masataka Higashiwaki
Recent Advances in Ga2O3 MOSFET Technologies. 1 - Wonil Chung, Mengwei Si, Peide D. Ye:
Alleviation of Short Channel Effects in Ge Negative Capacitance pFinFETs. 1-2 - Ying-Chen Chen, Xiaohan Wu, Yao-Feng Chang, Jack C. Lee:
Nonlinearity Enhancement by Positive Pulse Stress in Multilevel Cell Selectorless RRAM Applications. 1-2 - Eilam Yalon
Energy-Efficient Phase Change Memory Programming by Nanosecond Pulses. 1-2 - Namphung Peimyoo, Jake Mehew
Photo-oxidized HfS2 - An embeddable and writable high-k dielectric for flexible Van der Waals nano-electronics. 1-2 - Jasper Bizindavyi, Anne S. Verhulst, Bart Soree
Impact of calibrated band-tails on the subthreshold swing of pocketed TFETs. 1-2 - Bassem Tossoun, Geza Kurczveil, Chong Zhang, Di Liang, Raymond G. Beausoleil:
High-speed 1310 nm Hybrid Silicon Quantum Dot Photodiodes with Ultra-low Dark Current. 1-2 - Abdullah Alharbi, Davood Shahrjerdi:
Variability in synthetic MoS2 devices: Effect of the growth substrate. 1-2 - Elvira Fortunato
Paper electronics: a sustainable multifunctional platform. 1-2 - H.-S. Philip Wong:
The End of the Road for 2D Scaling of Silicon CMOS and the Future of Device Technology. 1-2 - H. Hahn, H. Yacoub, T. Zweipfennig, G. Lukens, Simon Kotzea
Novel approach for a monolithically integrated GaN cascode with minimized conduction and switching losses. 1-2 - Jingshan Wang, Lina Cao, Jinqiao Xie, Edward Beam, Chris Youtsey, Robert McCarthy, Louis Guido, Patrick Fay:
Vertical GaN-on-GaN p-n Diodes with 10-A Forward Current and 1.6 kV Breakdown Voltage. 1-2 - Kang L. Wang:
Recent Progress in Spintronics and Devices. 1-2 - Joshua D. Caldwell:
Approaches for Dynamic IR N ano-Optics using 2D Materials. 1-2 - Iuliana P. Radu
Spin-based majority gates for logic applications. 1-2 - Mohammad T. Sharbati
Energy-Efficient, Two-Dimensional Analog Memory for Neuromorphic Computing. 1-2 - Dibyendu Chatterjee, Anil Kottantharayil:
An Improved 1T-DRAM Cell Using TiO2as the Source and Drain of an n-Channel PD-SOI MOSFET. 1-2 - Nishita Deka, Vivek Subramanian
First demonstration of vacuum-sealed fully integrated BEOL-compatible field emission devices for Si integrated high voltage applications. 1-2 - Yihao Fang, Jonathan P. Sculley, Miguel E. Urteaga, Andy D. Carter, Paul D. Yoder, Mark J. W. Rodwell:
Design of InP Segmented-collector DHBTs with Reduced Collector Transit Time τc for Large Power Bandwidth Power Amplifiers. 1-2 - Abin Varghese, Denis Joseph, Sayantan Ghosh, Kartikey Thakar
WSe2/ReS2 vdW Heterostructure for Versatile Optoelectronic Applications. 1-2 - Wenshen Li, Kazuki Nomoto, Zongyang Hu, Nicholas Tanen, Kohei Sasaki, Akito Kuramata, Debdeep Jena, Huili Grace Xing:
1.5 kV Vertical Ga2O3 Trench-MIS Schottky Barrier Diodes. 1-2 - Czeslaw Skierbiszewski
Tunnel junctions for two-color nitride light emitting diodes and laser diodes grown by plasma assisted molecular beam epitaxy. 1-2 - Amritesh Rai, Jun Hong Park
Enhanced P-Type Behavior in 2D WSe2 via Chemical Defect Engineering. 1-2 - Nujhat Tasneem, Asif Islam Khan:
On the Possibility of Dynamically Tuning and Collapsing the Ferroelectric Hysteresis/Memory Window in an Asymmetric DG MOS Device: A Path to a Reconfigurable Logic-Memory Device. 1-2 - Peide D. Ye:
Steep-Slope Hysteresis-Free Negative-Capacitance 2D Transistors. 1 - Insik Yoon, Muya Chang, Kai Ni, Matthew Jerry, Samantak Gangopadhyay, Gus Henry Smith, Tomer Hamam, Vijayakrishan Narayanan, Justin Romberg, Shih-Lien Lu, Suman Datta
A FeFET Based Processing-In-Memory Architecture for Solving Distributed Least-Square Optimizations. 1-2 - E. A. Douglas, B. A. Klein, A. A. Allerman, Albert G. Baca, T. R. Fortune, A. M. Armstrong:
Enhancement-mode Al045Ga0.55N/Al0.3Ga0.7N High Electron Mobility Transistor with p-Al0.3Ga0.7N Gate. 1-2 - Ruiping Zhou, Jörg Appenzeller:
Three-Dimensional Integration of Multi-Channel MoS2 Devices for High Drive Current FETs. 1-2
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