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Taiichi Otsuji
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2020 – today
- 2024
- [c13]Chao Tang, Koichi Tamura, Aoi Hamada, Hiroyoshi Kudo, Shinnosuke Uchigasaki, Yuma Takida, Hiroaki Minamide, Tsung-Tse Lin, Akira Satou, Taiichi Otsuji:
Bi2Se3/h-BN Heterostructure Rectenna for fast and Sensitive THz Detection. DRC 2024: 1-2 - 2023
- [c12]Dai Nakajima, Kazuki Nishimura, Mitsuki Watanabe, Tsung-Tse Lin, Keisuke Kasai, Masato Yoshida, Tetsuya Suemitsu, Taiichi Otsuji, Akira Satou:
Conversion Gain Enhancement of a UTC-PD-Integrated HEMT Photonic Double-Mixer by High-Intensity Optical Subcarrier Signal. OFC 2023: 1-3 - 2021
- [j17]Michael S. Shur
, Gregory Aizin, Taiichi Otsuji
Plasmonic Field-Effect Transistors (TeraFETs) for 6G Communications. Sensors 21(23): 7907 (2021) - [c11]Koichi Tamura, Daichi Ogiura, Kento Suwa, Hirokazu Fukidome
Fast terahertz detection by asymmetric dual-grating-gate graphene FET. DRC 2021: 1-2 - [c10]Taiichi Otsuji, Katsumi Iwatsuki, Hirohito Yamada, Masafumi Yashima:
Concept of Resilient Electric Power and Information Communication Technology (R-EICT) Converged Network Systems Based on Overall Optimization of Autonomous Decentralized Cooperative Control of DC Microgrids. ISGT 2021: 1-5
2010 – 2019
- 2019
- [c9]Yuya Omori, Tomotaka Hosotani, Taiichi Otsuji, Katsumi Iwatsuki, Akira Satou:
UTC-PD-Integrated HEMT for Optical-to-Millimeter-Wave Carrier Frequency Down-Conversion. OFC 2019: 1-3 - 2018
- [c8]Stephane Boubanga-Tombet, Deepika Yadav, Wojciech Knap
Graphene-Channel-Transistor Terahertz Amplifier. DRC 2018: 1-2 - 2015
- [c7]Kenta Sugawara, Tetsuya Kawasaki, Gen Tamamushi, Mastura B. Hussin, Adrian Dobroiu, Tomohiro Yoshida, Tetsuya Suemitsu
Sub-THz photonic frequency conversion using graphene and InP-based transistors for future fully coherent access network. ECOC 2015: 1-3 - 2013
- [j16]Hirokazu Fukidome
Site-Selective Epitaxy of Graphene on Si Wafers. Proc. IEEE 101(7): 1557-1566 (2013) - [j15]Myung-Ho Jung, Goon-Ho Park, Tomohiro Yoshida, Hirokazu Fukidome
High-Performance Graphene Field-Effect Transistors With Extremely Small Access Length Using Self-Aligned Source and Drain Technique. Proc. IEEE 101(7): 1603-1608 (2013) - [c6]Tomohiro Yoshida, Kengo Kobayashi, Taiichi Otsuji, Tetsuya Suemitsu
Impact of T-gate stem height on parasitic gate delay time in InGaAs-HEMTs. ESSDERC 2013: 115-118 - [c5]Tetsuya Kawasaki, Adrian Dobroiu, Takanori Eto, Yuki Kurita, Kazuki Kojima, Yuhei Yabe, Hiroki Sugiyama
Graphene-channel FETs for photonic frequency double-mixing conversion over the sub-THz band. ESSDERC 2013: 318-321 - 2010
- [j14]Amine el Moutaouakil, Tsuneyoshi Komori, Kouhei Horiike, Tetsuya Suemitsu
Room Temperature Intense Terahertz Emission from a Dual Grating Gate Plasmon-Resonant Emitter Using InAlAs/InGaAs/InP Material Systems. IEICE Trans. Electron. 93-C(8): 1286-1289 (2010)
2000 – 2009
- 2009
- [j13]Takuya Nishimura, Nobuhiro Magome, HyunChul Kang, Taiichi Otsuji
Spectral Narrowing Effect of a Novel Super-Grating Dual-Gate Structure for Plasmon-Resonant Terahertz Emitter. IEICE Trans. Electron. 92-C(5): 696-701 (2009) - 2007
- [j12]Mitsuhiro Hanabe, Yahya Moubarak Meziani, Taiichi Otsuji
Possibility of Terahertz Injection-Locked Oscillation in an InGaP/InGaAs/GaAs Two-Dimensional Plasmon-Resonant Photomixer. IEICE Trans. Electron. 90-C(5): 949-954 (2007) - 2006
- [j11]Mitsuhiro Hanabe, Takuya Nishimura, Masaki Miyamoto, Taiichi Otsuji
Structure-Sensitive Design for Wider Tunable Operation of Terahertz Plasmon-Resonant Photomixer. IEICE Trans. Electron. 89-C(7): 985-992 (2006) - [j10]Takuya Nishimura, Mitsuhiro Hanabe, Masaki Miyamoto, Taiichi Otsuji
Terahertz Frequency Multiplier Operation of Two Dimensional Plasmon Resonant Photomixer. IEICE Trans. Electron. 89-C(7): 1005-1011 (2006) - 2001
- [j9]Kimikazu Sano, Koichi Murata, Taiichi Otsuji
An 80-Gb/s optoelectronic delayed flip-flop IC using resonant tunneling diodes and uni-traveling-carrier photodiode. IEEE J. Solid State Circuits 36(2): 281-289 (2001) - 2000
- [j8]Koichi Murata, Taiichi Otsuji
A distributed selector IC using GaAs MESFET's with multilayer-interconnection structure. IEEE J. Solid State Circuits 35(2): 258-267 (2000)
1990 – 1999
- 1999
- [j7]Yutaka Miyamoto, Mikio Yoneyama, Taiichi Otsuji
40-Gbit/s TDM transmission technologies based on ultra-high-speed ICs. IEEE J. Solid State Circuits 34(9): 1246-1253 (1999) - [c4]Shunji Kimura
Circuit design technologies for high-speed lightwave communications beyond 40 Gbit/s. ISCAS (2) 1999: 488-491 - 1998
- [j6]Taiichi Otsuji
An 80-Gbit/s multiplexer IC using InAlAs/InGaAs/InP HEMTs. IEEE J. Solid State Circuits 33(9): 1321-1327 (1998) - [j5]Koichi Murata, Taiichi Otsuji
A 40-Gbit/s superdynamic decision IC fabricated with 0.12-μm GaAs MESFET's. IEEE J. Solid State Circuits 33(10): 1527-1535 (1998) - [c3]Kimikazu Sano, Koichi Narahara, Koichi Murata, Taiichi Otsuji, Kiyomitsu Onodera:
High-speed GaAs MESFET Digital IC Design for Optical Communication Systems. ASP-DAC 1998: 1-5 - 1997
- [j4]Taiichi Otsuji
A super-dynamic flip-flop circuit for broad-band applications up to 24 Gb/s utilizing production-level 0.2-μm GaAs MESFETs. IEEE J. Solid State Circuits 32(9): 1357-1362 (1997) - [j3]Taiichi Otsuji
40-Gb/s ICs for future lightwave communications systems. IEEE J. Solid State Circuits 32(9): 1363-1370 (1997) - 1995
- [j2]Koichi Murata, Taiichi Otsuji
A novel high-speed latching operation flip-flop (HLO-FF) circuit and its application to a 19-Gb/s decision circuit using a 0.2-μm GaAs MESFET. IEEE J. Solid State Circuits 30(10): 1101-1108 (1995) - 1991
- [c2]Taiichi Otsuji:
A Picosecond Accuracy Timing Error Compensation Technique in TDR Measurement. ITC 1991: 969-975
1980 – 1989
- 1989
- [j1]Taiichi Otsuji, Naoaki Narumi:
A 10-ps resolution, process-insensitive timing generator IC. IEEE J. Solid State Circuits 24(5): 1412-1417 (1989) - 1988
- [c1]Teruo Tamama, Naoaki Narumi, Taiichi Otsuji, Masao Suzuki, Tsuneta Sudo:
Key Technologies for 500 MHz VLSI Test System "ULTIMATE". ITC 1988: 108-113
Coauthor Index
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