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Characterisation of a Thin Fully Depleted SOI Pixel Sensor with High Momentum Charged Particles
/ Battaglia, Marco (LBL, Berkeley ; UC, Santa Cruz) ; Bisello, Dario (Padua U. ; INFN, Padua) ; Contarato, Devis (LBL, Berkeley) ; Denes, Peter (LBL, Berkeley) ; Giubilato, Piero (Padua U. ; INFN, Padua) ; Mattiazzo, Serena (Padua U. ; INFN, Padua) ; Pantano, Devis (Padua U. ; INFN, Padua)
This paper presents the results of the characterisation of a thin, fully depleted pixel sensor manufactured in SOI technology on high-resistivity substrate with high momentum charged particles. The sensor is thinned to 70 $\mu$m and a thin phosphor layer contact is implanted on the back-plane. [...]
arXiv:1202.1105.-
2012 - 8 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 676 (2012) 50-53
Preprint: PDF; External link: Preprint
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2.
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Characterisation of a Pixel Sensor in 0.20 micron SOI Technology for Charged Particle Tracking
/ Battaglia, Marco (UC, Santa Cruz ; LBL, Berkeley ; CERN) ; Bisello, Dario (Padua U. ; INFN, Padua) ; Contarato, Devis (LBL, Berkeley) ; Denes, Peter (LBL, Berkeley) ; Giubilato, Piero (UC, Santa Cruz ; Padua U. ; INFN, Padua) ; Mattiazzo, Serena (Padua U. ; INFN, Padua) ; Pantano, Devis (Padua U. ; INFN, Padua) ; Zalusky, Sarah (UC, Santa Cruz)
This paper presents the results of the characterisation of a pixel sensor manufactured in OKI 0.2 micron SOI technology integrated on a high-resistivity substrate, and featuring several pixel cell layouts for charge collection optimisation. The sensor is tested with short IR laser pulses, X-rays and 200 GeV pions. [...]
arXiv:1103.0881.-
2011 - 15 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 654 (2011) 258-265
Fulltext: PDF; External link: Preprint
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3.
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Studies of Vertex Tracking with SOI Pixel Sensors for Future Lepton Colliders
/ Battaglia, Marco (UC, Santa Cruz ; LBL, Berkeley ; CERN) ; Contarato, Devis (LBL, Berkeley) ; Denes, Peter (LBL, Berkeley) ; Liko, Dietrich (Vienna, OAW) ; Mattiazzo, Serena (INFN, Padua ; Padua U.) ; Pantano, Devis (INFN, Padua ; Padua U.)
This paper presents a study of vertex tracking with a beam hodoscope consisting of three layers of monolithic pixel sensors in SOI technology on high-resistivity substrate. We study the track extrapolation accuracy, two-track separation and vertex reconstruction accuracy in pion-Cu interactions with 150 and 300 GeV/c pions at the CERN SPS. [...]
arXiv:1204.2910.-
2012 - 15 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 681 (2012) 61-67
Preprint: PDF; External link: Preprint
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4.
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Total dose effects on deep-submicron SOI technology for Monolithic Pixel Sensor development
/ Mattiazzo, S (Padua U. ; INFN, Padua) ; Battaglia, M (UC, Berkeley ; LBL, Berkeley) ; Bisello, D (Padua U. ; INFN, Padua) ; Contarato, D (LBL, Berkeley) ; Denes, P (LBL, Berkeley) ; Giubilato, P (Padua U. ; INFN, Padua ; LBL, Berkeley) ; Pantano, D (Padua U. ; INFN, Padua) ; Pozzobon, N (Padua U. ; INFN, Padua) ; Tessaro, M (Padua U. ; INFN, Padua) ; Wyss, J (INFN, Padua ; Cassino U.)
We developed and characterized Monolithic pixel detectors in deep-submicron Fully Depleted (FD) Silicon On Insulator (SOI) technology. This paper presents the first studies of total dose effects from ionizing radiation performed on single transistor test structures. [...]
CERN, 2009
Published version from CERN: PDF;
In : Topical Workshop on Electronics for Particle Physics, Paris, France, 21 - 25 Sep 2009, pp.591-595 (CERN-2009-006)
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5.
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Tests of monolithic pixel detectors in SOI technology with depleted substrate
/ Giubilato, P (UC, Santa Cruz ; CERN ; Padua U. ; INFN, Padua) ; Bisello, D (Padua U. ; INFN, Padua) ; Contarato, D (LBL, Berkeley) ; Kim, T S (UC, Santa Cruz) ; Denes, P (LBL, Berkeley) ; Pantano, D (Padua U. ; INFN, Padua) ; Zalusky, S (UC, Santa Cruz) ; Pozzobon, N (Padua U. ; INFN, Padua) ; Mattiazzo, S (Padua U. ; INFN, Padua) ; Battaglia, M (UC, Santa Cruz ; LBL, Berkeley ; CERN) et al.
This paper reviews the R\&D; program on monolithic pixel sensors in silicon-on-insulator technology carried out by LBNL, the University and INFN, Padova and SCIPP-UCSC. The main issues addressed by the R\&D;, back-gating and radiation tolerance, are discussed together with the preliminary results from the characterization of the latest chip in this technology. [...]
2011
- Published in : Nucl. Instrum. Methods Phys. Res., A 650 (2011) 184-188
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6.
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LePix-A high resistivity, fully depleted monolithic pixel detector
/ Giubilato, P (INFN, Padua ; Padua U.) ; Tindall, C (LBL, Berkeley) ; Mugnier, H (MIND Micro Technol, Bat Archamps, France.) ; Bisello, D (INFN, Padua ; Padua U.) ; Marchioro, A (CERN) ; Snoeys, W (CERN) ; Denes, P (LBL, Berkeley) ; Pantano, D (INFN, Padua ; Padua U.) ; Rousset, J (MIND Micro Technol, Bat Archamps, France.) ; Mattiazzo, S (INFN, Padua ; Padua U.) et al.
The LePix project explores monolithic pixel sensors fabricated in a 90 nm CMOS technology built over a lightly doped substrate. This approach keeps the advantages usually offered by Monolithic Active Pixel Sensors (MAPS), like a low input capacitance, having a single piece detector and using a standard CMOS production line, and adds the benefit of charge collection by drift from a depleted region several tens of microns deep into the substrate, therefore providing an excellent signal to noise ratio and a radiation tolerance superior to conventional un-depleted MAPS. [...]
2013
- Published in : Nucl. Instrum. Methods Phys. Res., A 732 (2013) 91-94
In : 13th Vienna Conference on Instrumentation, Vienna, Austria, 11 - 15 Feb 2013, pp.91-94
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7.
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Design and characterization of novel monolithic pixel sensors for the ALICE ITS upgrade
/ Cavicchioli, C (CERN) ; Chalmet, P L (MIND, Archamps) ; Giubilato, P (Padua U. ; INFN, Padua) ; Hillemanns, H (CERN) ; Junique, A (CERN) ; Kugathasan, T (CERN) ; Mager, M (CERN) ; Marin Tobon, C A (Valencia, Polytechnic U.) ; Martinengo, P (CERN) ; Mattiazzo, S (Padua U. ; INFN, Padua) et al.
Within the R&D; activities for the upgrade of the ALICE Inner Tracking System (ITS), Monolithic Active Pixel Sensors (MAPS) are being developed and studied, due to their lower material budget (~0.3%X0~0.3%X0 in total for each inner layer) and higher granularity (View the MathML source~20μm×20μm pixels) with respect to the present pixel detector. This paper presents the design and characterization results of the Explorer0 chip, manufactured in the TowerJazz 180 nm CMOS Imaging Sensor process, based on a wafer with high-resistivity View the MathML source(ρ>1kΩcm) and 18 μm thick epitaxial layer. [...]
2014
- Published in : Nucl. Instrum. Methods Phys. Res., A 765 (2014) 177-182
Elsevier Open Access article: PDF;
In : 9th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors, Hiroshima, Japan, 2 - 6 Sep 2013, pp.177-182
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8.
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Radiation hardness of different silicon materials after high-energy electron irradiation
/ Dittongo, S (Trieste U. ; INFN, Trieste) ; Bosisio, L (Trieste U. ; INFN, Trieste) ; Ciacchi, M (Trieste U.) ; Contarato, D (Hamburg U., Inst. Exp. Phys. II) ; D'Auria, G (Sincrotrone Trieste) ; Fretwurst, E (Hamburg U., Inst. Exp. Phys. II) ; Lindstrom, G (Hamburg U., Inst. Exp. Phys. II)
The radiation hardness of diodes fabricated on standard and diffusion-oxygenated float-zone, Czochralski and epitaxial silicon substrates has been compared after irradiation with 900 MeV electrons up to a fluence of $2.1 \times 10^{15} \ \rm{e} / cm^2$. The variation of the effective dopant concentration, the current related damage constant $\alpha$ and their annealing behavior, as well as the charge collection efficiency of the irradiated devices have been investigated..
2004 - 7 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 530 (2004) 110-116
In : 6th International Conference on Large Scale Applications and Radiation Hardness of Semiconductor Detectors, Florence, Italy, 29 Sep - 1 Oct 2003, pp.110-116
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10.
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LePIX: First results from a novel monolithic pixel sensor
/ Mattiazzo, S (Padua U ; INFN, Padua) ; Battaglia, M (UC, Santa Cruz ; CERN) ; Bisello, D (Padua U ; INFN, Padua) ; Caselle, M (CERN) ; Chalmet, P (Unlisted, FR) ; Demaria, N (INFN, Turin) ; Giubilato, P (Padua U ; INFN, Padua) ; Ikemoto, Y (CERN) ; Kloukinas, K (CERN) ; Mansuy, C (CERN) et al.
We present a monolithic pixel sensor developed in the framework of the LePIX project aimed at tracking/triggering tasks where high granularity, low power consumption, material budget, radiation hardness and production costs are a concern. The detector is built in a 90nm CMOS process on a substrate of moderate resistivity. [...]
2013 - 4 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 718 (2013) 288-291
In : 12th Pisa Meeting on Advanced Detectors: Frontier Detector for Frontier Physics, La Biodola, Isola d'Elba, Italy, 20 - 26 May 2012, pp.288-291
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