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Reduction of implantation shadowing effect by dual-wavelength exposure photo process / Gu, Yiming ; Chou, Dyiann ; Lee Sang Yun ; Roche, William ; Sturtevant, John
As transistor engineering continues to well below 100 nm length devices, ion implantation process tolerances are making these formerly "non-critical" lithography levels more and more difficult. In order to minimize the channeling effect and to obtain a controllable profile of dopant, an angle implantation is often required. [...]
2003 - Published in : Proc. SPIE: 5039 (2003) , pp. 1312-1318

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