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Reduction of implantation shadowing effect by dual-wavelength exposure photo process / Gu, Yiming ; Chou, Dyiann ; Lee Sang Yun ; Roche, William ; Sturtevant, John
As transistor engineering continues to well below 100 nm length devices, ion implantation process tolerances are making these formerly "non-critical" lithography levels more and more difficult. In order to minimize the channeling effect and to obtain a controllable profile of dopant, an angle implantation is often required. [...]
2003 - Published in : Proc. SPIE: 5039 (2003) , pp. 1312-1318

Detaljnije - Slični zapisi

Također vidi: slična imena autora
50	Gu, Y
1	Gu, Y D
26	Gu, Y F
3	Gu, Y J
20	Gu, Y Q
144	Gu, Y T
16	Gu, Y.
1	Gu, Y.D.
10	Gu, Y.T.
2	Gu, YT
1	Gu, Yan Jan
1	Gu, Yan Jun
1	Gu, Yangling
58	Gu, Yanxi
7	Gu, Yi
1	Gu, Yikun
3	Gu, Ying
17	Gu, Ying-Qiu
5	Gu, Yingfei
5	Gu, Yong-Jian
1	Gu, Yong-Xian
1	Gu, Yonggen
1	Gu, Yonggeng
1	Gu, Yongwei
1	Gu, Yu
10	Gu, Yuantao
1	Gu, Yuantong
1	Gu, Yuchao
1	Gu, Yumei
1	Gu, Yun-Jun
4	Gu, Yun-Ting
1	Gu, Yunan
4	Gu, Yunhong
2	Gu, Yuxiang

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