DF005M, DF01M, DF02M, DF04M, DF06M, DF08M, DF10M: Vishay General Semiconductor
DF005M, DF01M, DF02M, DF04M, DF06M, DF08M, DF10M: Vishay General Semiconductor
DF005M, DF01M, DF02M, DF04M, DF06M, DF08M, DF10M: Vishay General Semiconductor
www.vishay.com
Vishay General Semiconductor
Miniature Glass Passivated Single-Phase Bridge Rectifiers
FEATURES
• UL recognition, file number E54214
• Ideal for printed circuit boards
• Applicable for automative insertion
• High surge current capability
• Solder dip 275 °C max. 10 s, per JESD 22-B106
~
~ • Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
~
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification
~ for SMPS, lighting ballaster, adapter, battery charger, home
Case Style DFM appliances, office equipment, and telecommunication
applications.
PRIMARY CHARACTERISTICS
Package DFM MECHANICAL DATA
IF(AV) 1A Case: DFM
50 V, 100 V, 200 V, 400 V, 600 V,
VRRM
800 V, 1000 V
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
IFSM 50 A
IR 5 μA
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
VF at IF = 1.0 A 1.1 V
E3 suffix meets JESD 201 class 1A whisker test
TJ max. 150 °C
Polarity: As marked on body
Diode variations Quad
(1)
RJA 40
Typical thermal resistance °C/W
RJL 15
Note
(1) Thermal resistance from junction to ambient and from junction to lead mounted on PCB with 0.5" x 0.5" (13 mm x 13 mm) copper pads
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
1.0 10
Average Forward Output Current (A)
60 Hz
0.5
0.1 TJ = 25 °C
P.C.B. Mounted on Pulse Width = 300 µs
0.51 x 0.51" (13 x 13 mm) 1 % Duty Cycle
Copper Pads with 0.06"
(1.5 mm) Lead Length
0 0.01
20 40 60 80 100 120 140 150 0.4 0.6 0.8 1.0 1.2 1.4
Ambient Temperature (°C) Instantaneous Forward Voltage (V)
Fig. 1 - Derating Curve Output Rectified Current Fig. 3 - Typical Forward Characteristics Per Diode
60 100
Average Forward Output Current (A)
TJ = 150 °C
50 Single Sine-Wave
10 TJ = 125 °C
40
30 1
20
0.1
10 TJ = 25 °C
1.0 Cycle
0 0.01
1 10 100 0 20 40 60 80 100
Number of Cycles at 60 Hz Percent of Rated Peak Reverse Voltage (%)
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
Current Per Diode
100 100
TJ = 25 °C
10
10
1 0.1
1 10 100 0.01 0.1 1 10 100
Reverse Voltage (V) t - Heating Time (s)
Fig. 5 - Typical Junction Capacitance Per Diode Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Case Style DFM
0.335 (8.51)
0.320 (8.12)
0.045 (1.14)
0.035 (0.89) 0.185 (4.69) 0.013 (0.33)
0.150 (3.81) 0.0086 (0.22)
0.023 (0.58)
0.018 (0.46)
0.350 (8.9)
0.205 (5.2) 0.075 (1.90) 0.300 (7.6)
0.195 (5.0) 0.055 (1.39)
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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including but not limited to the warranty expressed therein.
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