Data Sheet: TDA1310A
Data Sheet: TDA1310A
Data Sheet: TDA1310A
DATA SHEET
TDA1310A
Stereo Continuous Calibration DAC
(CC-DAC)
Preliminary specification
Supersedes data of TDA1310; TDA1310T July 1993
File under Integrated Circuits, IC01
Philips Semiconductors
May 1994
Philips Semiconductors
Preliminary specification
TDA1310A
FEATURES
GENERAL DESCRIPTION
PACKAGE
TYPE NUMBER
PINS
PIN POSITION
MATERIAL
CODE
TDA1310A
DIL8
plastic
SOT97DE
TDA1310AT
SO8
plastic
SOT96AG
May 1994
Philips Semiconductors
Preliminary specification
TDA1310A
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDD
supply voltage
5.0
5.5
IDD
supply current
3.0
4.0
mA
IFS
VDD = 5 V
0.9
1.0
1.1
mA
VDD = 3 V
0.6
mA
(THD+N)/S
at 0 dB signal level
65
61
dB
0.05
0.08
30
24
dB
33
dB
at 60 dB signal level
at 60 dB signal level;
A-weighted
S/N
signal-to-noise ratio at
bipolar zero
2.2
at 60 dB signal level;
A-weighted;
R3 = R4 = 11 k;
(see Fig.1); IFS = 2 mA
1.7
86
92
dB
95
dB
tCS
0.2
BR
18.4
Mbits/s
fclk
18.4
MHz
TCFS
400 106
Tamb
operating ambient
temperature
40
+85
Ptot
15
20
mW
6.0
mW
May 1994
Philips Semiconductors
May 1994
Preliminary specification
TDA1310A
Philips Semiconductors
Preliminary specification
TDA1310A
PINNING
SYMBOL
PIN
DESCRIPTION
BCK
WS
DATA
data input
GND
ground
VDD
supply voltage
IOL
Iref
reference input
IOR
FUNCTIONAL DESCRIPTION
The basic operation of the continuous calibration DAC is
illustrated in Fig.3. The figure shows the calibration and
operation cycle. During calibration of the MOS current
source (Fig.3a) transistor M1 is connected as a diode by
applying a reference current. The voltage Vgs on the
intrinsic gate-source capacitance Cgs of M1 is then
determined by the transistor characteristics. After
calibration of the drain current to the reference value Iref,
the switch S1 is opened and S2 is switched to the other
position (Fig.3b). The gate-to-source voltage Vgs of M1 is
not changed because the charge on Cgs is preserved.
Therefore, the drain current of M1 will still be equal to Iref
and this exact duplicate of Iref is now available at the OUT
terminal.
V DD1
I FS1
I bias1
V DD2
I FS2
I bias2
V DD
May 1994
ref
Philips Semiconductors
Preliminary specification
TDA1310A
Calibration principle
a.
b.
a. Calibration.
b. Operation.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDD
supply voltage
Tstg
storage temperature
55
+150
Txtal
+150
Tamb
Ves
electrostatic handling
40
+85
note 1
2000
+2000
note 2
200
+200
Notes
1. Human body model; C = 100 pF; R = 1500 ; 3 zaps positive and negative.
2. Machine model; C = 200 pF; L = 0.5 H; R = 10 ; 3 zaps positive and negative.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
May 1994
PARAMETER
VALUE
UNIT
100
K/W
SO8
210
K/W
Philips Semiconductors
Preliminary specification
TDA1310A
CHARACTERISTICS
VDD = 5 V; Tamb = 25 C; measured in Fig.1; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supply
VDD
supply voltage
IDD
supply current
SVRR
at code 0000H
3.0
5.0
5.5
3.0
4.0
mA
30
dB
VI = 0 V
10
|IIH|
VI = 5 V
10
fclk
clock frequency
18.4
MHz
BR
18.4
Mbits/s
fWS
384
kHz
rise time
12
ns
tf
fall time
12
ns
tCY
54
ns
tBCKH
15
ns
tBCKL
15
ns
tSU;DAT
12
ns
tHD:DAT
ns
tHD:WS
ns
tSU;WS
12
ns
7.4
11.0
14.6
reference resistor
see Fig.1
resolution
16
bits
VDCC
2.0
VDD 1
IFS
full-scale current
0.9
1.0
1.1
mA
TCFS
full-scale temperature
coefficient
400
106
Ibias
bias current
643
714
785
GFS
11.9
13.2
14.5
Gbias
8.48
9.42
10.36
May 1994
Philips Semiconductors
Preliminary specification
PARAMETER
total harmonic distortion plus
noise-to-signal ratio
TDA1310A
CONDITIONS
cs
channel separation
|IO|
|td|
S/N
MAX.
61
UNIT
65
0.05
0.08
at 60 dB signal level;
note 2
30
24
dB
dB
33
dB
2.2
at 60 dB signal level;
A-weighted; note 2;
R3 = R4 = 11 k;
see Fig.1; IFS = 2 mA
1.7
at 0 dB signal level;
f = 20 Hz to 20 kHz
65
61
dB
0.05
0.08
0.2
note 1
A-weighted at code
0000H
86
95
dB
0.2
0.3
dB
0.2
86
92
dB
95
dB
May 1994
TYP.
at 0 dB signal level;
note 2
at 60 dB signal level;
A-weighted; note 2
tcs
MIN.
Philips Semiconductors
Preliminary specification
TDA1310A
May 1994
Philips Semiconductors
Preliminary specification
TDA1310A
APPLICATION INFORMATION
Remark: the graphs are constructed from average measurement values of a small amount of engineering samples,
therefore no guarantee for typical values is implied.
Fig.6
May 1994
Fig.7
10
Philips Semiconductors
Preliminary specification
TDA1310A
(1) Measured including all distortion plus noise at a signal level of 60 dB.
(2) Measured including all distortion plus noise at a signal level of 0 dB.
May 1994
11
Philips Semiconductors
Preliminary specification
TDA1310A
PACKAGE OUTLINES
8.25
7.80
9.8
9.2
seating plane
3.2
max 4.2
max
0.51
min
3.60
3.05
2.54
(3x)
1.15
max
0.53
max
0.254 M
7.62
1.73 max
10.0
8.3
6.48
6.20
Dimensions in mm.
May 1994
0.38 max
12
MSA252 - 1
Philips Semiconductors
Preliminary specification
TDA1310A
4.0
3.8
5.0
4.8
6.2
5.8
0.1 S
0.7
0.3
0.7
0.6
1.45
1.25
1.0
0.5
0.25
0.10
pin 1
index
detail A
1.27
0.49
0.36
0.25 M
(8x)
Dimensions in mm.
May 1994
13
1.75
1.35
0.25
0.19
0 to 8
MBC180 - 1
Philips Semiconductors
Preliminary specification
TDA1310A
A modified wave soldering technique is recommended
using two solder waves (dual-wave), in which a turbulent
wave with high upward pressure is followed by a smooth
laminar wave. Using a mildly-activated flux eliminates the
need for removal of corrosive residues in most
applications.
SOLDERING
Plastic dual in-line packages
BY DIP OR WAVE
The maximum permissible temperature of the solder is
260 C; this temperature must not be in contact with the
joint for more than 5 s. The total contact time of successive
solder waves must not exceed 5 s.
BY WAVE
May 1994
14
Philips Semiconductors
Preliminary specification
TDA1310A
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
May 1994
15
Philips Semiconductors
All rights are reserved. Reproduction in whole or in part is prohibited without the
prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation
or contract, is believed to be accurate and reliable and may be changed without
notice. No liability will be accepted by the publisher for any consequence of its
use. Publication thereof does not convey nor imply any license under patent- or
other industrial or intellectual property rights.