Silvaco TCAD Part I - Overview

Silvaco
TCAD
Part I - Overview
ECE 543
Spring 2005
Silvaco TCAD
Simulation Modules
Athena
2D Process Simulator
Atlas
1D/2D/3D Device Simulator
a modular and extensible framework for one, two and three dimensional semiconductor
device simulation
SSuprem3
1D Process Simulator
Mercury
Fast 2D Device Simulator
provides general capabilities for numerical, physically-based, two-dimensional simulation
of FETs
Mocasim
Advanced three-valley Monte Carlo simulator designed to generate the transport
parameters used in the physical device simulators
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Silvaco TCAD
General Comments
Each module is designed to simulate a
specific range of processes
Learning the syntax of each module is
similar to learning a programming
language but simple and intuitive (for the
most part)
Very extensive manuals available for
Athena (438 p.), Atlas (two volumes;316 p. & 332 p. ),
Mercury (168 p.), Mocasim (112 p.), and
Ssuprem3 (218 p.)
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Silvaco TCAD
SSUPREM3
A FAST universal 1D process simulator with simple device
simulation extensions (programming syntax)
Predicts process doping profiles without the need for
experimental backup***
Calculates layer thickness for device simulators
Can also be used to calculate some electrical quantities
Most important results
Layer thickness of materials that make up the semiconductor
structure
Distribution of impurities
Mainly used to generate impurity profile for transfer into

ATHENA or ATLAS
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*** remember GIGO

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Silvaco TCAD
SSUPREM3
Process step capabilities
Inert ambient drive-in
Oxidation of silicon, poly-silicon, silicon nitride
Ion implantation
Epitaxial growth of silicon
Low temperature deposition or etching of
various materials
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Silvaco TCAD
SSUPREM3
Can define up to ten different materials
There are five default materials
Single crystal silicon
Polysilicon
Silicon dioxide
Silicon nitride
Aluminum
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Silvaco TCAD
SSUPREM3
Structures can be doped with up to ten
impurities
Boron
Phosphorus
Arsenic
Antimony
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Silvaco TCAD
Athena
Comprehensive software tool for modeling
semiconductor fabrication processes
Provides techniques to perform efficient
simulation analysis that substitutes for
costly real world experimentation
Combines high temperature process
modeling such as impurity diffusion and
oxidation, topography simulation, and
lithography simulation
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Silvaco TCAD
Athena Modules
ATHENA
This tool performs structure initialization and manipulation, and provides basic
deposition and etch facilities
SSUPREM4
This tool is used in the design, analysis, and optimization of silicon
semiconductor structures. It simulates silicon processing steps such as ion
implantation, diffusion and oxidation.
ELITE
This tool is a general purpose 2D topography simulator that accurately describes
a wide range of deposition, etch and reflow processes used in modern IC
technologies.
OPTOLITH
This tool performs general optical lithography simulation including 2D aerial
imaging, non-planar photoresist exposure, and post exposure bake and
development.
FLASH
This tool is used in the design, analysis and optimization of compound
semiconductor structures. It simulates implantation and diffusion in GaAs and
other compound semiconductor materials, including SiGe.
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Silvaco TCAD
Athena Shortlist
ATHENA Features and Capabilities
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Bake
CMP (Chemical Mechanical Polishing)
Deposition
Development
Diffusion
Epitaxy
Etch
Exposure
Implantation
Oxidation
Silicidaion
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Silvaco TCAD
Atlas
ATLAS is a physically-based two and three
dimensional device simulator
It predicts the electrical behavior of specified
semiconductor structures and provides insight
into the internal physical mechanisms
associated with device operation.
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Silvaco TCAD
Atlas
ATLAS provides a comprehensive set
of physical models, including:
DC, AC small-signal, and full timedependency.
Drift-diffusion transport models.
Energy balance and Hydrodynamic
transport models.
Lattice heating and heatsinks.
Graded and abrupt heterojunctions.
Optoelectronic interactions with
general ray tracing.
Amorphous and polycrystalline
materials.
General circuit environments.
Stimulated
emission and radiation
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Fermi-Dirac and Boltzmann statistics

Advanced mobility models.
Heavy doping effects.
Full acceptor and donor trap dynamics
Ohmic, Schottky, and insulating contacts.
SRH, radiative, Auger, and surface
recombination.
Impact ionization (local and non-local).
Floating gates.
Band-to-band and Fowler-Nordheim
tunneling.
Hot carrier injection.
Thermionic emission currents.
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Silvaco TCAD
Mercury
Mercury provides a comprehensive set
of physical models, including:
DC, AC small-signal, and full time-dependent analysis
Quantum, Fermi-Dirac, and Boltzmann statistics
Advanced energy balance transport models including Monte
Carlo derived mobility, energy-relaxation, and potential energy
relationships
Abrupt heterojunctions
Heavy doping effects
Ohmic and Schottky contacts
Breakdown effects including impact ionization
Thermionic and tunneling gate currents
General terminal circuit environments
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Silvaco TCAD
Mercury Modules
MERCURY
framework supplies general capabilities that are accessed by all
the device simulation products.
FASTBLAZE
simulates devices fabricated using arbitrary semiconductors (IIVI, III-V, and IV-IV materials) and heterojunction devices.
FASTGIGA
adds the ability to perform non-isothermal calculations that
include the effects of lattice heating and heat sinks.
FASTMIXEDMODE
offers circuit simulation capabilities that employ numerical
physically-based devices as well as compact analytical models.
FASTNOISE
adds a physically-based noise simulator.
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Silvaco
TCAD
Part II - Examples
ECE 543
Spring 2005
Silvaco TCAD
SSUPREM3
1D process simulator
Define mesh density in INIT step!!!

Oxidation Example
Dry (slow, better quality for FET gates)
Wet (fast, lower quality for masking)
Diffusion Example
Pre-deposition step (specify conc. of impurity)
Drive in step (extract final junction depth)
Ion Implantation Example

Dose, energy, tilt
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Silvaco TCAD
Athena
1D/2D process simulator
Define mesh density/grid first!!!

Oxidation Example
Diffusion Example
Pre-deposition step (specify conc. of impurity)
Drive in step (extract final junction depth)
Ion Implantation Example

Dose, energy
Oxidation with etch and diffusion

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Silvaco TCAD
Homework
Chapter 3
See table 3.3 for sample
Problem 3.21 (compare to results of 3.8)
Problem 3.23 (compare to results of 3.6)
Chapter 4
See p.94 and 95 for sample
Problem 4.20
Problem 4.21
Chapter 5
Redo Example 5.3 with Silvaco
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Silvaco TCAD
Homework
Hint: Use STATEMENTS section of
manuals for help
P. 57 in ssuprem3_um.pdf
P. 251 in athena_users.pdf
Also look at chapter 2 in this particular manual for a short Athena tutorial
this is optional, but if you go through this tutorial, youll almost have your
homework done!
Specific info about manuals

Pcitools.pdf
Page 49 has details on EXTRACT command for
ssuprem3 (Chapter 2 in this manual)
TonyPlot has built in help that you might want to

investigate
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19

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Silvaco

Mainly used to generate impurity profile for transfer into

*** remember GIGO

Fermi-Dirac and Boltzmann statistics

Define mesh density in INIT step!!!

Ion Implantation Example

Define mesh density/grid first!!!

Ion Implantation Example

Oxidation with etch and diffusion

Specific info about manuals

TonyPlot has built in help that you might want to

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