Switching Regulator Applications: Absolute Maximum Ratings
Switching Regulator Applications: Absolute Maximum Ratings
Switching Regulator Applications: Absolute Maximum Ratings
2SK3565
Switching Regulator Applications
Unit: mm
Symbol
Rating
Unit
Drain-source voltage
VDSS
900
VDGR
900
Gate-source voltage
VGSS
30
(Note 1)
ID
Pulse (t = 1 ms)
(Note 1)
IDP
15
PD
45
JEDEC
EAS
595
mJ
JEITA
Avalanche current
IAR
EAR
4.5
mJ
Channel temperature
Tch
150
Tstg
-55~150
DC
Drain current
1: Gate
2: Drain
3: Source
SC-67
TOSHIBA
2-10U1B
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
2
Characteristics
Symbol
Max
Unit
Rth (ch-c)
2.78
C/W
Rth (ch-a)
62.5
C/W
Note 1: Ensure that the channel temperature does not exceed 150.
2002-06
2013-11-01
2SK3565
Electrical Characteristics (Ta = 25C)
Characteristics
Symbol
Test Condition
VGS = 25 V, VDS = 0 V
IGSS
IG =10 A, VDS = 0 V
V (BR) GSS
IDSS
Min
Typ.
Max
Unit
10
30
100
V (BR) DSS
ID = 10 mA, VGS = 0 V
900
Vth
VDS = 10 V, ID = 1 mA
2.0
4.0
RDS (ON)
VGS = 10 V, ID = 3 A
2.0
2.5
Yfs
VDS = 20 V, ID = 3 A
2.0
4.5
Input capacitance
Ciss
1150
Crss
20
Output capacitance
Coss
100
30
70
60
170
28
17
11
Rise time
Turn-on time
ton
tf
Turn-off time
VOUT
RL =
66.7
50
Switching time
Fall time
ID = 3 A
10 V
VGS
0V
tr
VDD
200 V
Duty 1%, tw = 10 s
toff
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
VDD
400 V, VGS = 10 V, ID = 5 A
pF
ns
nC
Symbol
Test Condition
Min
Typ.
Max
Unit
IDR
IDRP
15
(Note 1)
VDSF
IDR = 5 A, VGS = 0 V
1.7
trr
IDR = 5 A, VGS = 0 V,
900
ns
Qrr
5.4
Marking
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
K3565
2013-11-01
2SK3565
ID VDS
ID VDS
8
5.5
5.25
10
(A)
COMMON
SOURCE
Tc = 25C
PULSE TEST
DRAIN CURRENT ID
DRAIN CURRENT ID
(A)
3
5
2
4.75
1
0
0
VGS = 4.5 V
12
16
DRAIN-SOURCE VOLTAGE
20
VDS
COMMON
SOURCE
Tc = 25C
PULSE TEST
5.5
5.25
3
5
2
4.75
(V)
VGS = 4 .5V
10
ID VGS
VDS (V)
PULSE TEST
DRAIN-SOURCE VOLTAGE
(A)
DRAIN CURRENT ID
VDS = 20 V
4
Tc = 55C
100
25
0
0
GATE-SOURCE VOLTAGE
VGS
10
(V)
COMMON SOURCE
Tc = 25
14
PULSE TEST
ID = 5 A
12
1.5
0
0
12
16
GATE-SOURCE VOLTAGE
Yfs ID
VGS
20
(V)
RDS (ON) ID
10
Tc = 55C
25
100
1
COMMON SOURCE
VDS = 20 V
PULSE TEST
1
DRAIN CURRENT ID
DRAIN-SOURCE ON RESISTANCE
RDS (ON) ()
VDS
20
(V)
10
0.1
0.1
30
VDS VGS
COMMON SOURCE
20
DRAIN-SOURCE VOLTAGE
10
0
0
24
10
10
(A)
COMMON SOURCE
Tc = 25C
PULSE TEST
VGS = 10 V15V
1
0.01
0.1
DRAIN CURRENT ID
10
(A)
2013-11-01
2SK3565
RDS (ON) Tc
IDR VDS
10
COMMON SOURCE
COMMON SOURCE
PULSE TEST
ID = 5A
3
4
1.5
VGS = 10 V
2
0
80
40
40
80
CASE TEMPERATURE
120
Tc
Tc = 25C
PULSE TEST
3
1
0.5
0.3
10
1
3
0.1
0
160
(C)
VGS = 0, 1 V
0.4
0.8
DRAIN-SOURCE VOLTAGE
CAPACITANCE VDS
Ciss
(pF)
(V)
1000
Coss
100
COMMON SOURCE
VGS = 0 V
Crss
Tc = 25C
1
10
DRAIN-SOURCE VOLTAGE
30 50
VDS
2
COMMON SOURCE
VDS = 10 V
ID = 1 mA
PULSE TEST
0
80
100
(V)
VDS (V)
DRAIN-SOURCE VOLTAGE
80
60
40
20
120
CASE TEMPERATURE
40
80
120
Tc
160
(C)
100
80
CASE TEMPERATURE
PD Tc
40
40
160
Tc
20
500
400
(C)
VDD = 100 V
300
200
VGS
200
8
COMMON SOURCE
ID = 5 A
100
Tc = 25C
PULSE TEST
0
10
20
12
400
200
16
VDS
30
Qg
(V)
10
0.1
VGS
C
CAPACITANCE
VDS
f = 1 MHz
1.6
Vth Tc
10000
0
0
1.2
GATE-SOURCE VOLTAGE
DRAIN-SOURCE ON RESISTANCE
RDS (ON) ( )
10
40
(nC)
2013-11-01
2SK3565
rth tw
10
Duty=0.5
0.2
0.1
0.1
0.05
PDM
0.02
SINGLE PULSE
0.01
0.01
Duty = t/T
Rth (ch-c) = 2.78C/W
1.25C/W
0.001
10
100
10
PULSE WIDTH
100
tw (s)
EAS Tch
100
1000
(A)
DRAIN CURRENT ID
AVALANCHE ENERGY
EAS (mJ)
ID max (PULSED) *
10
100 s *
ID max (CONTINUOUS) *
1 ms *
0.1
10
DC OPERATION
Tc = 25C
800
600
400
200
Tc=25
CURVES
LINEARLY
0.01
1
MUST
WITH
BE
DERATED
INCREASE
IN
VDSS max
TEMPERATURE.
10
100
1000
VDS
0
25
10000
50
75
100
125
150
(V)
15 V
BVDSS
IAR
15 V
VDD
TEST CIRCUIT
RG = 25
VDD = 90 V, L = 43.6mH
VDS
WAVE FORM
AS =
1
B VDSS
L I2
B
V
VDSS
DD
2013-11-01
2SK3565
RESTRICTIONS ON PRODUCT USE
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all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the
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OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
2013-11-01