TPC8016-H: High-Efficiency DC DC Converter Applications Notebook PC Applications Portable-Equipment Applications
TPC8016-H: High-Efficiency DC DC Converter Applications Notebook PC Applications Portable-Equipment Applications
TPC8016-H: High-Efficiency DC DC Converter Applications Notebook PC Applications Portable-Equipment Applications
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (High-Speed U-MOS III)
TPC8016-H
High-Efficiency DCDC Converter Applications Notebook PC Applications Portable-Equipment Applications
Small footprint due to small and thin package High-speed switching Small gate charge: Qg = 48 nc (typ.) Low drain-source ON-resistance: RDS (ON) = 3.7 m (typ.) High forward transfer admittance: |Yfs| = 25 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 30 V) Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA) Unit: mm
2-6J1B
1.0
Circuit Configuration
8 7 6 5
mJ A mJ C C
2006-11-16
TPC8016-H
Thermal Characteristics
Characteristic Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Symbol Rth (ch-a) Max 65.8 Unit C/W
Rth (ch-a)
125
C/W
Marking (Note 5)
TPC8016 H
Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish.
Note 1: The channel temperature should not exceed 150C during use.
(a)
(b)
Note 3: VDD = 24 V, Tch = 25C (initial), L = 0.5 mH, RG = 25 , IAR = 15 A Note 4: Repetitive rating: pulse width limited by max channel temperature Note 5: on the lower left of the marking indicates Pin 1. * Weekly code: (Three digits) Week of manufacture (01 for first week of year, continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year)
2006-11-16
TPC8016-H
Electrical Characteristics (Ta = 25C)
Characteristic Gate leakage current Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain (Miller) charge Gate switch charge tf toff Qg Qgs1 Qgd QSW VDD 24 V, VGS = 10 V, ID = 15 A Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) |Yfs| Ciss Crss Coss tr VGS ton 10 V 0V 4.7 VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = 30 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = 20 V VDS = 10 V, ID = 1 mA VGS = 4.5 V, ID = 7.5 A VGS = 10 V, ID = 7.5 A VDS = 10 V, ID = 7.5 A Min 30 15 1.1 12.5 ID = 7.5 A VOUT RL = 2 Typ. 5.5 3.7 25 2380 410 980 9.8 21 15 60 46 26 7.2 12.2 15.6 Max 10 10 2.3 7.5 5.7 ns nC pF Unit A A V V m S
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TPC8016-H
ID VDS
10 4.5 8 10 3.5 3.2 3.15
Common source Ta = 25C, pulse test
ID VDS
20 4.5 3.5 16 3.05 10 3.2 12 3.1 8 3.0 4 2.9 3.3
Common source Ta = 25C, pulse test
3.1
6 3.0 4 2.9 2 2.8 VGS = 2.7 V 0.2 0.4 0.6 0.8 1.0
0 0
0 0
Drain-source voltage
VDS (V)
Drain-source voltage
VDS (V)
ID VGS
50 Common source VDS = 10 V Pulse test 1
VDS VGS
Common source Ta = 25C Pulse test
40
0.8
30
0.6
20
10 100 Ta = 55C 0 0 1 2 3 4 5 6
0.2
0 0
10
12
Gate-source voltage
VGS (V)
Gate-source voltage
VGS (V)
|Yfs| ID
100 100
RDS (ON) ID
Common source Ta = 25C Pulse test
|Yfs| (S)
Ta = 55C 10 100 25
10 VGS = 4.5 V 10
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TPC8016-H
RDS (ON) Ta
12 100 5
IDR VDS
(A)
10
10
10
3 VGS = 0 V 1
0 80
40
40
80
120
160
0.1 0
Drain-source voltage
VDS (V)
Capacitance VDS
10000 2.5
Vth Ta
Ciss
(pF)
1000 Coss Crss 100 Common source VGS = 0 V f = 1 MHz Ta = 25C 10 0.1 1 10 100
1.5
Capacitance C
40
80
120
160
Drain-source voltage
VDS (V)
PD Ta
2 (1)
(1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b)
VDS (V)
1.6
30
Drain-source voltage
(2) 0.8
0.4
0 0
50
100
150
200
0 0
10
20
30
40
50
0 60
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Gate-source voltage
1.2
t = 10 s
VGS (V)
TPC8016-H
rth tw
1000
(1) (2) Device mounted on a glass-epoxy board (a) (Note 2a) Device mounted on a glass-epoxy board (b) (Note 2b)
(2)
100 (1)
10
Single pulse
0.1 0.001
0.01
0.1
10
100
1000
Pulse width
tw
(S)
10 ms*
0.1
0.01 0.01
* Single pulse Ta = 25C Curves must be derated linearly with increase in temperature. 0.1 1
Drain-source voltage
VDS (V)
2006-11-16
TPC8016-H
20070701-EN
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability Handbook etc. The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customers own risk. The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
2006-11-16