High Conductance Ultra Fast Diode: Absolute Maximum Ratings
High Conductance Ultra Fast Diode: Absolute Maximum Ratings
High Conductance Ultra Fast Diode: Absolute Maximum Ratings
N
BAV99
CONNECTION DIAGRAM
A7
2
1 2
SOT-23
Parameter
Value
70 200 600 700 1.0 2.0 -55 to +150 150
Units
V mA mA mA A A C C
Tstg TJ
Peak Forward Surge Current Pulse width = 1.0 second Pulse width = 1.0 microsecond Storage Temperature Range Operating Junction Temperature
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD RJA
Characteristic
Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Ambient
Max
BAV99 350 2.8 357
Units
mW mW/ C C/W
BAV99
Electrical Characteristics
Symbol
BV IR
Parameter
Breakdown Voltage Reverse Current
Test Conditions
I R = 100 A VR = 70 V VR = 25 V, TA = 150C VR = 70 V, TA = 150C I F = 1.0 mA I F = 10 mA I F = 50 mA I F = 150 mA VR = 0, f = 1.0 MHz I F = IR = 10 mA, IRR = 1.0 mA, RL = 100 I F = 10 mA, tr = 20 nS
Min
70
Max
2.5 30 50 715 855 1.0 1.25 1.5 6.0 1.75
Units
V A A A mV mV V V pF nS V
VF
Forward Voltage
CO TRR VFM
Typical Characteristics
50 0 05 REVERSE VOLTAGE vs REVERSE CURRENT BV - 1.0 to 100 uA
V V R R - REVERSE VOLTAGE (V)
150
Ta= 25C
140
130
120
110
100
GENERAL RULE: The Reverse Current of a diode will approximately double for every ten (10) Degree C increase in Temperature
485 Ta= 25C 450 400 350 300 250 225 1 2 3 5 10 20 30 50 100 IF - FORWARD CURRENT (uA) IF
725 Ta= 25C 700 650 600 550 500 450 0.1
10
BAV99
Typical Characteristics
(continued)
1.2
1.1
12
14 15
Average Rectified Current (Io) & Forward Current (I F) versus Ambient Temperature (TA)
IR -F OR WA R
CU R
RE NT
ST EA D
400
DO-35 Pkg
200
100
200
www.s-manuals.com