R1LP0408C-C Series

4M SRAM (512-kword × 8-bit)

REJ03C0077-0200Z
Rev. 2.00
May.26.2004

Description
The R1LP0408C-C is a 4-Mbit static RAM organized 512-kword × 8-bit. R1LP0408C-C Series has
realized higher density, higher performance and low power consumption by employing CMOS process
technology (6-transistor memory cell). The R1LP0408C-C Series offers low power standby power
dissipation; therefore, it is suitable for battery backup systems. It has packaged in 32-pin SOP, 32-pin
TSOP II.

Features
• Single 5 V supply: 5 V ± 10%
• Access time: 55/70 ns (max)
• Power dissipation:
 Active: 10 mW/MHz (typ)
 Standby: 4 µW (typ)
• Completely static memory.
 No clock or timing strobe required
• Equal access and cycle times
• Common data input and output.
 Three state output
• Directly TTL compatible.
 All inputs and outputs
• Battery backup operation.
• Operating temperature: −20 to +70°C

Rev.2.00, May.26.2004, page 1 of 12

R1LP0408C-C Series

Ordering Information
Type No. Access time Package
R1LP0408CSP-5SC 55 ns 525-mil 32-pin plastic SOP (32P2M-A)
R1LP0408CSP-7LC 70 ns
R1LP0408CSB-5SC 55 ns 400-mil 32-pin plastic TSOP II (32P3Y-H)
R1LP0408CSB-7LC 70 ns
R1LP0408CSC-5SC 55 ns 400-mil 32-pin plastic TSOP II reverse (32P3Y-J)
R1LP0408CSC-7LC 70 ns

Rev.2.00, May.26.2004, page 2 of 12

R1LP0408C-C Series

Pin Arrangement

32-pin SOP
32-pin TSOP 32-pin TSOP (reverse)

A18 1 32 VCC VCC 32 1 A18

A16 2 31 A15 A15 31 2 A16
A14 3 30 A17 A17 30 3 A14
A12 4 29 WE# WE# 29 4 A12
A7 5 28 A13 A13 28 5 A7
A6 6 27 A8 A8 27 6 A6
A5 7 26 A9 A9 26 7 A5
A4 8 25 A11 A11 25 8 A4
A3 9 24 OE# OE# 24 9 A3
A2 10 23 A10 A10 23 10 A2
A1 11 22 CS# CS# 22 11 A1
A0 12 21 I/O7 I/O7 21 12 A0
I/O0 13 20 I/O6 I/O6 20 13 I/O0
I/O1 14 19 I/O5 I/O5 19 14 I/O1
I/O2 15 18 I/O4 I/O4 18 15 I/O2
VSS 16 17 I/O3 I/O3 17 16 VSS

(Top view) (Top view)

Pin Description
Pin name Function
A0 to A18 Address input
I/O0 to I/O7 Data input/output
CS# (CS) Chip select
OE# (OE) Output enable
WE# (WE) Write enable
VCC Power supply
VSS Ground

Rev.2.00, May.26.2004, page 3 of 12

R1LP0408C-C Series

Block Diagram

LSB V CC
A11
A9 V SS
A8
A15 •
•
A18 • Memory Matrix
Row •
A10 • 2,048 × 2,048
Decoder
A13
A17
A16
A14
A12
MSB

I/O0 •
• Column I/O •
•
Input Column Decoder
Data
Control

I/O7

LSB A3 A2A1A0 A4 A5 A6 A7 MSB

••

CS# Timing Pulse Generator

WE# Read/Write Control

OE#

Rev.2.00, May.26.2004, page 4 of 12

R1LP0408C-C Series

Operation Table
WE# CS# OE# Mode VCC current I/O0 to I/O7 Ref. cycle
× H × Not selected ISB, ISB1 High-Z 
H L H Output disable ICC High-Z 
H L L Read ICC Dout Read cycle
L L H Write ICC Din Write cycle (1)
L L L Write ICC Din Write cycle (2)
Note: H: VIH, L: VIL, ×: VIH or VIL

Absolute Maximum Ratings

Parameter Symbol Value Unit
Power supply voltage relative to VSS VCC −0.5 to +7.0 V
1 2
Terminal voltage on any pin relative to VSS VT −0.5* to VCC + 0.3* V
Power dissipation PT 0.7 W
Operating temperature Topr −20 to +70 °C
Storage temperature range Tstg −65 to +150 °C
Storage temperature range under bias Tbias −20 to +85 °C
Notes: 1. VT min: −3.0 V for pulse half-width ≤ 30 ns.
2. Maximum voltage is +7.0 V.

DC Operating Conditions
(Ta = −20 to +70°C)

Parameter Symbol Min Typ Max Unit

Supply voltage VCC 4.5 5.0 5.5 V
VSS 0 0 0 V
Input high voltage VIH 2.2  VCC + 0.3 V
1
Input low voltage VIL −0.3*  0.8 V
Note: 1. VIL min: −3.0 V for pulse half-width ≤ 30 ns.

Rev.2.00, May.26.2004, page 5 of 12

R1LP0408C-C Series

DC Characteristics
Parameter Symbol Min Typ Max Unit Test conditions
Input leakage current |ILI|   1 µA Vin = VSS to VCC
Output leakage current |ILO|   1 µA CS# = VIH or OE# = VIH or
WE# = VIL or VI/O = VSS to VCC
Operating current ICC  1.5*1 3 mA CS# = VIL,
Others = VIH/ VIL, II/O = 0 mA
Average operating current ICC1  8*1 25 mA Min. cycle, duty = 100%,
CS# = VIL, Others = VIH/VIL
II/O = 0 mA
ICC2  2*1 5 mA Cycle time = 1 µs,
duty = 100%,
II/O = 0 mA, CS# ≤ 0.2 V,
VIH ≥ VCC − 0.2 V, VIL ≤ 0.2 V
Standby current ISB  0.1*1 0.5 mA CS# = VIH
Standby current −5SC to +70°C ISB1   8 µA Vin ≥ 0 V, CS# ≥ VCC − 0.2 V
2
to +40°C ISB1  1.0* 3 µA
1
to +25°C ISB1  0.8* 3 µA
−7LC to +70°C ISB1   16 µA
to +40°C ISB1  1.0*2 10 µA
to +25°C ISB1  0.8*1 10 µA
Output low voltage VOL   0.4 V IOL = 2.1 mA
Output high voltage VOH 2.4   V IOH = −1.0 mA
VOH2 2.6   V IOH = −0.1 mA
Notes: 1. Typical values are at VCC = 5.0 V, Ta = +25°C and specified loading, and not guaranteed.
2. Typical values are at VCC = 5.0 V, Ta = +40°C and specified loading, and not guaranteed.

Capacitance
(Ta = +25°C, f = 1.0 MHz)

Parameter Symbol Min Typ Max Unit Test conditions Note

Input capacitance Cin   8 pF Vin = 0 V 1
Input/output capacitance CI/O   10 pF VI/O = 0 V 1
Note: 1. This parameter is sampled and not 100% tested.

Rev.2.00, May.26.2004, page 6 of 12

R1LP0408C-C Series

AC Characteristics
(Ta = −20 to +70°C, VCC = 5 V ± 10%, unless otherwise noted.)

Test Conditions

• Input pulse levels: VIL = 0.4 V, VIH = 2.4 V

• Input rise and fall time: 5 ns
• Input and output timing reference levels: 1.5 V
• Output load: 1 TTL Gate + CL (50 pF) (R1LP0408C-5SC)
1 TTL Gate + CL (100 pF) (R1LP0408C-7LC)
(Including scope and jig)

Read Cycle

R1LP0408C-C
-5SC -7LC
Parameter Symbol Min Max Min Max Unit Notes
Read cycle time tRC 55  70  ns
Address access time tAA  55  70 ns
Chip select access time tCO  55  70 ns
Output enable to output valid tOE  25  35 ns
Chip select to output in low-Z tLZ 10  10  ns 2
Output enable to output in low-Z tOLZ 5  5  ns 2
Chip deselect to output in high-Z tHZ 0 20 0 25 ns 1, 2
Output disable to output in high-Z tOHZ 0 20 0 25 ns 1, 2
Output hold from address change tOH 10  10  ns

Rev.2.00, May.26.2004, page 7 of 12

R1LP0408C-C Series

Write Cycle

R1LP0408C-C
-5SC -7LC
Parameter Symbol Min Max Min Max Unit Notes
Write cycle time tWC 55  70  ns
Chip selection to end of write tCW 50  60  ns 4
Address setup time tAS 0  0  ns 5
Address valid to end of write tAW 50  60  ns
Write pulse width tWP 40  50  ns 3, 12
Write recovery time tWR 0  0  ns 6
Write to output in high-Z tWHZ 0 20 0 25 ns 1, 2, 7
Data to write time overlap tDW 25  30  ns
Data hold from write time tDH 0  0  ns
Output active from end of write tOW 5  5  ns 2
Output disable to output in high-Z tOHZ 0 20 0 25 ns 1, 2, 7
Notes: 1. tHZ, tOHZ and tWHZ are defined as the time at which the outputs achieve the open circuit conditions
and are not referred to output voltage levels.
2. This parameter is sampled and not 100% tested.
3. A write occurs during the overlap (tWP) of a low CS# and a low WE#. A write begins at the later
transition of CS# going low or WE# going low. A write ends at the earlier transition of CS# going
high or WE# going high. tWP is measured from the beginning of write to the end of write.
4. tCW is measured from CS# going low to the end of write.
5. tAS is measured from the address valid to the beginning of write.
6. tWR is measured from the earlier of WE# or CS# going high to the end of write cycle.
7. During this period, I/O pins are in the output state so that the input signals of the opposite phase
to the outputs must not be applied.
8. If the CS# low transition occurs simultaneously with the WE# low transition or after the WE#
transition, the output remain in a high impedance state.
9. Dout is the same phase of the write data of this write cycle.
10. Dout is the read data of next address.
11. If CS# is low during this period, I/O pins are in the output state. Therefore, the input signals of
the opposite phase to the outputs must not be applied to them.
12. In the write cycle with OE# low fixed, tWP must satisfy the following equation to avoid a problem of
data bus contention. tWP ≥ tDW min + tWHZ max

Rev.2.00, May.26.2004, page 8 of 12

R1LP0408C-C Series

Timing Waveform

Read Timing Waveform (WE# = VIH)

tRC

Address Valid address

tAA
tCO
CS#
tLZ tHZ
tOE
tOLZ
OE#
tOHZ

High impedance
Dout Valid data
tOH

Rev.2.00, May.26.2004, page 9 of 12

R1LP0408C-C Series

Write Timing Waveform (1) (OE# Clock)

tWC

Address Valid address

tAW tWR

OE#
tCW

CS#
*8

tAS tWP

WE#

tOHZ

High impedance
Dout

tDW tDH

Din Valid data

Rev.2.00, May.26.2004, page 10 of 12

R1LP0408C-C Series

Write Timing Waveform (2) (OE# Low Fixed)

tWC

Address Valid address

tCW tWR

CS#
*8
tAW
tWP
tOH
WE# tAS
tWHZ tOW
*9 *10

High impedance
Dout
tDW tDH
*11

Din Valid data

Rev.2.00, May.26.2004, page 11 of 12

R1LP0408C-C Series

Low VCC Data Retention Characteristics

(Ta = −20 to +70°C)

Parameter Symbol Min Typ Max Unit Test conditions*3

VCC for data retention VDR 2   V CS# ≥ VCC − 0.2 V, Vin ≥ 0 V
Data −5SC to +70°C ICCDR   8 µA VCC = 3.0 V, Vin ≥ 0 V
retention 2
to +40°C ICCDR  1.0* 3 µA CS# ≥ VCC − 0.2 V
current 1
to +25°C ICCDR  0.8* 3 µA
−7LC to +70°C ICCDR   16 µA
2
to +40°C ICCDR  1.0* 10 µA
1
to +25°C ICCDR  0.8* 10 µA
Chip deselect to data retention time tCDR 0   ns See retention waveform
4
Operation recovery time tR tRC*   ns
Notes: 1. Typical values are at VCC = 3.0 V, Ta = +25°C and specified loading, and not guaranteed.
2. Typical values are at VCC = 3.0 V, Ta = +40°C and specified loading, and not guaranteed.
3. CS# controls address buffer, WE# buffer, OE# buffer, and Din buffer. In data retention mode,
Vin levels (address, WE#, OE#, I/O) can be in the high impedance state.
4. tRC = read cycle time.

Low VCC Data Retention Timing Waveform (CS# Controlled)

tCDR Data retention mode tR

VCC
4.5 V

2.2 V
VDR

CS# CS# ≥ VCC – 0.2 V

0V

Rev.2.00, May.26.2004, page 12 of 12

Revision History R1LP0408C-C Series Data Sheet

Rev. Date Contents of Modification

Page Description
1.00 Aug.01.2003  Initial issue
2.00 May.26.2004 6 DC characteristics
−5SC and −7LC items’ description are divided.
12 Low VCC Data Retention Characteristics
−5SC and −7LC items’ description are divided.
12 Low VCC Data Retention Timing Waveform
2.4 V to 2.2 V
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