PD - 96231

IRLB8748PbF
Applications HEXFET® Power MOSFET
l Optimized for UPS/Inverter Applications VDSS RDS(on) max Qg
4.8m:
l High Frequency Synchronous Buck
Converters for Computer Processor Power 30V 15nC
l High Frequency Isolated DC-DC D
Converters with Synchronous Rectification
for Telecom and Industrial use
S
D
G
Benefits TO-220AB
l Very Low RDS(on) at 4.5V VGS IRLB8748PbF
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
G D S
and Current
Gate Drain Source
l Lead-Free

Absolute Maximum Ratings

Parameter Max. Units
VDS Drain-to-Source Voltage 30
V
VGS Gate-to-Source Voltage ± 20
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 92 f
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 65
A
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) 78
IDM Pulsed Drain Current c 370
PD @TC = 25°C Maximum Power Dissipation h 75
W
PD @TC = 100°C Maximum Power Dissipation h 38
Linear Derating Factor 0.5 W/°C
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw i y
10 lbf in (1.1N m) y
Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case h ––– 2.0
RθCS Case-to-Sink, Flat Greased Surface 0.5 ––– °C/W
RθJA Junction-to-Ambient g ––– 62

Notes through ‡ are on page 9

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IRLB8748PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250µA
∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 21 ––– mV/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– 3.8 4.8 VGS = 10V, ID = 40A e
––– 5.5 6.8
mΩ
VGS = 4.5V, ID = 32A e
VGS(th) Gate Threshold Voltage 1.35 1.8 2.35 V
VDS = VGS, ID = 50µA
∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient ––– -7.1 ––– mV/°C
IDSS Drain-to-Source Leakage Current ––– ––– 1.0 VDS = 24V, VGS = 0V
µA
––– ––– 150 VDS = 24V, VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
nA
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
gfs Forward Transconductance 196 ––– ––– S VDS = 15V, ID = 32A
Qg Total Gate Charge ––– 15 23
Qgs1 Pre-Vth Gate-to-Source Charge ––– 3.6 ––– VDS = 15V
Qgs2 Post-Vth Gate-to-Source Charge ––– 2.2 ––– nC VGS = 4.5V
Qgd Gate-to-Drain Charge ––– 5.9 ––– ID = 32A
Qgodr Gate Charge Overdrive ––– 3.9 –––
Qsw Switch Charge (Qgs2 + Qgd) ––– 8.1 –––
Qoss Output Charge ––– 11 ––– nC VDS = 16V, VGS = 0V
RG Gate Resistance ––– 2.0 3.5 Ω
td(on) Turn-On Delay Time ––– 14 ––– VDD = 15V, VGS = 4.5V e
tr Rise Time ––– 96 ––– ID = 32A
ns
td(off) Turn-Off Delay Time ––– 16 ––– RG = 1.8Ω
tf Fall Time ––– 34 –––
Ciss Input Capacitance ––– 2139 ––– VGS = 0V
Coss Output Capacitance ––– 464 ––– pF VDS = 15V
Crss Reverse Transfer Capacitance ––– 199 ––– ƒ = 1.0MHz

Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy d ––– 114 mJ
IAR Avalanche Current c ––– 32 A
EAR Repetitive Avalanche Energy c ––– 7.5 mJ

Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current
(Body Diode)
––– –––
92 f MOSFET symbol
showing the
A
ISM Pulsed Source Current ––– ––– integral reverse
(Body Diode)c 370
p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.0 V TJ = 25°C, IS = 32A, VGS = 0V e
trr Reverse Recovery Time ––– 23 35 ns TJ = 25°C, IF = 32A, VDD = 15V
Qrr Reverse Recovery Charge ––– 39 59 nC di/dt = 200A/µs e
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

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 IRLB8748PbF

1000 1000
VGS VGS
TOP 10V TOP 10V
9.0V 9.0V
7.0V 7.0V

ID, Drain-to-Source Current (A)

ID, Drain-to-Source Current (A)

5.5V 5.5V
4.5V 4.5V
4.0V 4.0V
100 3.5V 100 3.5V
BOTTOM 3.0V BOTTOM 3.0V

3.0V

10 3.0V 10

≤60µs PULSE WIDTH

≤60µs PULSE WIDTH Tj = 175°C
Tj = 25°C
1 1
0.1 1 10 100 0.1 1 10 100
V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

1000 2.0
ID = 40A
RDS(on) , Drain-to-Source On Resistance

1.8 VGS = 10V

ID, Drain-to-Source Current (A)

100 1.6

T J = 175°C 1.4
(Normalized)

10 1.2

1.0
T J = 25°C
1 0.8

VDS = 15V 0.6

≤60µs PULSE WIDTH
0.1 0.4
1 2 3 4 5 6 7 8 -60 -40 -20 0 20 40 60 80 100120140160180
TJ , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

vs. Temperature
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 IRLB8748PbF

10000 14.0
VGS = 0V, f = 1 MHZ
ID= 32A
C iss = C gs + C gd, C ds SHORTED
12.0 VDS= 24V
C rss = C gd

VGS, Gate-to-Source Voltage (V)

VDS= 15V
C oss = C ds + C gd
10.0
Ciss
C, Capacitance (pF)

8.0
1000
Coss 6.0

4.0
Crss
2.0

100 0.0
1 10 100 0 10 20 30 40
VDS, Drain-to-Source Voltage (V) QG, Total Gate Charge (nC)

Fig 5. Typical Capacitance vs. Fig 6. Typical Gate Charge vs.

Drain-to-Source Voltage Gate-to-Source Voltage

1000 1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ISD, Reverse Drain Current (A)

ID, Drain-to-Source Current (A)

100 TJ = 175°C 100µsec

100
1msec

10
10msec

T J = 25°C 10
1
Tc = 25°C
Tj = 175°C
VGS = 0V
Single Pulse
0.1 1
0.0 0.5 1.0 1.5 2.0 2.5 0 1 10 100
VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
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 IRLB8748PbF

100 2.5
Limited By Package

VGS(th) , Gate threshold Voltage (V)

80
2.0
ID, Drain Current (A)

60

1.5

40
ID = 50µA
ID = 250µA
1.0
ID = 1.0mA
20

0 0.5
25 50 75 100 125 150 175 -75 -50 -25 0 25 50 75 100 125 150 175
T C , Case Temperature (°C) T J , Temperature ( °C )

Fig 9. Maximum Drain Current vs. Fig 10. Threshold Voltage vs. Temperature
Case Temperature

10
Thermal Response ( Z thJC ) °C/W

1 D = 0.50
0.20
0.10
0.1 0.05 Ri (°C/W) τi (sec)
R1 R2 R3 R4
R1 R2 R3 R4
1.55246 0.005303
0.02 τJ
τJ
τC
τ
0.01 τ1 0.00682 8.250407
τ2 τ3 τ4
τ1 τ2 τ3 τ4
0.00172 6.932919
0.01 Ci= τi/Ri
Ci i/Ri 0.43999 0.000317
SINGLE PULSE Notes:
( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRLB8748PbF

18 500
RDS(on), Drain-to -Source On Resistance (m Ω)

EAS , Single Pulse Avalanche Energy (mJ)

ID = 40A ID
450
16 TOP 6.73A
400 11.6A
14 350 BOTTOM 32A

300
12
250
10
200
T J = 125°C
8 150

100
6
T J = 25°C 50

4 0
2 4 6 8 10 25 50 75 100 125 150 175
Starting T J , Junction Temperature (°C)
VGS, Gate -to -Source Voltage (V)

Fig 12. On-Resistance vs. Gate Voltage Fig 13c. Maximum Avalanche Energy
vs. Drain Current

15V
RD
V DS

L DRIVER V GS
VDS D.U.T.
RG
+
-V DD
RG D.U.T +
V
- DD
IAS A VGS
20V
VGS
tp 0.01Ω Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

Fig 13a. Unclamped Inductive Test Circuit Fig 14a. Switching Time Test Circuit
V(BR)DSS
VDS
tp
90%

10%
VGS
td(on) tr t d(off) tf
I AS
Fig 14b. Switching Time Waveforms
Fig 13b. Unclamped Inductive Waveforms
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 IRLB8748PbF

Driver Gate Drive

P.W.
D.U.T P.W.
Period D=
Period
+

ƒ VGS=10V *
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
- • Low Leakage Inductance
D.U.T. ISD Waveform
Current Transformer
+
Reverse
‚ Recovery Body Diode Forward
-
„ + Current Current
- di/dt
D.U.T. VDS Waveform
Diode Recovery
 dv/dt
VDD

RG • dv/dt controlled by RG V DD Re-Applied

• Driver same type as D.U.T. + Voltage Body Diode Forward Drop
• I SD controlled by Duty Factor "D" - Inductor Curent
• D.U.T. - Device Under Test

Ripple ≤ 5% ISD

* VGS = 5V for Logic Level Devices

Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs

Current Regulator
Same Type as D.U.T.
Id
Vds

50KΩ
Vgs
12V .2µF
.3µF

+
V
D.U.T. - DS
Vgs(th)
VGS

3mA

IG ID Qgodr Qgd Qgs2 Qgs1

Current Sampling Resistors

Fig 16. Gate Charge Test Circuit Fig 17. Gate Charge Waveform

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IRLB8748PbF
TO-220AB Package Outline (Dimensions are shown in millimeters (inches))

TO-220AB packages are not recommended for Surface Mount Application.

Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/

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 IRLB8748PbF

TO-220AB Part Marking Information

(;$03/( 7+,6,6$1,5)

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Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/

Notes:

 Repetitive rating; pulse width limited by When mounted on 1" square PCB (FR-4 or G-10 Material).
max. junction temperature. For recommended footprint and soldering techniques refer to
‚ Starting TJ = 25°C, L = 0.22mH, RG = 25Ω, application note #AN-994.
IAS = 32A. † Rθ is measured at TJ approximately 90°C.
ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%. ‡ This is only applied to TO-220AB pakcage.
„ Calculated continuous current based on
maximum allowable junction temperature.
Package limitation current is 78A.

Data and specifications subject to change without notice.

This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.04/2009
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