Infineon IRL3705N DS v01 - 02 EN
Infineon IRL3705N DS v01 - 02 EN
Infineon IRL3705N DS v01 - 02 EN
Description
Fifth Generation HEXFETs utilize advanced
processing techniques to achieve extremely low on- S
D
resistance per silicon area. This benefit, combined G
with the fast switching speed and ruggedized device TO-220AB
design that HEXFET Power MOSFETs are well IRL3705NPbF
known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety
of applications. G D S
The TO-220 package is universally preferred for all Gate Drain Source
commercial industrial applications at power
dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-
220 contribute to its wide acceptance throughout the
industry.
Standard Pack
Base part number Package Type Form Quantity Orderable Part Number
Thermal Resistance
Symbol Parameter Typ. Max. Units
RJC Junction-to-Case ––– 0.90
RCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
RJA Junction-to-Ambient ––– 62
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Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.056 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.010 VGS = 10V, ID = 46A
Static Drain-to-Source On-
RDS(on) ––– ––– 0.012 VGS = 5.0V, ID = 46A
Resistance
––– ––– 0.018 VGS = 4.0V, ID = 39A
VGS(th) Gate Threshold Voltage 1.0 ––– 2.0 V VDS = VGS, ID = 250µA
gfs Forward Trans conductance 50 ––– ––– S VDS = 25V, ID = 46A
––– ––– 25 VDS = 55V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– 250 VDS = 44V,VGS = 0V,TJ =150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 16V
IGSS nA
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -16V
Qg Total Gate Charge ––– ––– 98 ID = 46A
Qgs Gate-to-Source Charge ––– ––– 19 nC VDS = 44V
Qgd Gate-to-Drain Charge ––– ––– 49 VGS = 5.0V , See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 12 ––– VDD = 28V
tr Rise Time ––– 140 ––– ID = 46A
ns
td(off) Turn-Off Delay Time ––– 37 ––– RG= 1.8VGS = 5.0V
tf Fall Time ––– 78 ––– RD= 0.59See Fig. 10
Between lead,
LD Internal Drain Inductance ––– 4.5 –––
6mm (0.25in.)
nH
from package
LS Internal Source Inductance ––– 7.5 –––
and center of die contact
Ciss Input Capacitance ––– 3600 ––– VGS = 0V
Coss Output Capacitance ––– 870 ––– pF VDS = 25V
Crss Reverse Transfer Capacitance ––– 320 ––– ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Continuous Source Current MOSFET symbol
IS ––– ––– 89
(Body Diode) showing the
A
Pulsed Source Current integral reverse
ISM ––– ––– 310
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C,IS = 46A,VGS = 0V
trr Reverse Recovery Time ––– 94 140 ns TJ = 25°C ,IF = 46A
Qrr Reverse Recovery Charge ––– 290 440 nC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS +LD)
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig.11)
VDD = 25V, starting TJ = 25°C, L = 320H, RG = 25, IAS = 46A.(See fig.12)
ISD 46A, di/dt 250A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 300µs; duty cycle 2%.
Calculated continuous current based on maximum allowable junction temperature; for recommended current- handling of the
package refer to Design TIP # 93-4
.
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1000 1000
VGS VGS
TOP 15V TOP 15V
12V 12V
10V 10V
8.0V 8.0V
6.0V
4.0V 4.0V
3.0V 3.0V
BOTTOM 2.5V BOTTOM 2.5V
100 100
10 2.5V
10
2.5V
20µs PULSE WIDTH 20µs PULSE WIDTH
T J = 25°C T J = 175°C
1 1 A
A
0.1 1 10 100 0.1 1 10 100
VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V)
1000 3.0
I D = 77A
R DS(on) , Drain-to-Source On Resistance
I D , Drain-to-Source Current (A)
2.5
TJ = 25°C
TJ = 175°C
100 2.0
(Normalized)
1.5
10 1.0
0.5
V DS= 25V
20µs PULSE WIDTH VGS = 10V
1 A 0.0
2.0 3.0 4.0 5.0 6.0 7.0 8.0
A
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature (°C)
Fig. 3 Typical Transfer Characteristics
Fig. 4 Normalized On-Resistance
vs. Temperature
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6000 15
V GS = 0V, f = 1MHz I D = 46A
C iss = Cgs + C gd , Cds SHORTED V DS = 44V
4000
9
3000 Coss
6
2000
Crss 3
1000
1000
1000
OPERATION IN THIS AREA LIMITED
BY R DS(on)
ISD , Reverse Drain Current (A)
10µs
I D , Drain Current (A)
100
100µs
100
TJ = 175°C
TJ = 25°C 1ms
10
10ms
TC = 25°C
TJ = 175°C
VGS = 0V Single Pulse
10 A 1
0.4 0.8 1.2 1.6 2.0 2.4 2.8
A
1 10 100
VSD , Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V)
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100
LIMITED BY PACKAGE
80
ID , Drain Current (A)
60
20
0
25 50 75 100 125 150 175
TC , Case Temperature ( °C)
D = 0.50
Thermal Response (Z thJC)
0.20
0.10
0.1
0.05 PDM
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x ZthJC + TC
0.01
0.00001 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
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800
ID
RG D.U.T + 400
V
- DD
IAS A
10V
tp 0.01
200
Fig 12a. Unclamped Inductive Test Circuit
VDD = 25V
0 A
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
I AS
Fig 13a. Gate Charge Waveform Fig 13b. Gate Charge Test Circuit
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Fig 14. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
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TO-220 Package Outline (Dimensions are shown in millimeters (inches)
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Qualification Information
Industrial
Qualification Level (per JEDEC JESD47F)†
Revision History
Date Comments
Changed datasheet with Infineon logo - all pages.
05/25/2018 Corrected TO-220 Package outline on page 8.
Added disclaimer on last page.
Other Trademarks
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Edition 2016-04-19 IMPORTANT NOTICE For further information on the product, technology,
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values stated herein and/or any information Please note that this product is not qualified
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