 STGP10N60L

N-CHANNEL 10A - 600V - TO-220

LOGIC LEVEL IGBT
TYPE V CES V CE(sat ) IC
STGP10N60L 600 V < 1.95 V 10 A

■ HIGH INPUT IMPEDANCE

(VOLTAGE DRIVEN)
■ VERY LOW ON-VOLTAGE DROP (Vcesat)
■ LOW THRESHOLD VOLTAGE
(LOGIC LEVEL INPUT)
■ HIGH CURRENT CAPABILITY 3
■ OFF LOSSES INCLUDE TAIL CURRENT 2
1

APPLICATIONS TO-220
■ ELECTRONIC IGNITION

■ LIGHT DIMMER

■ STATIC RELAYS

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symb ol Parameter Value Un it
V CES Collector-Emitter Voltage (VGS = 0) 600 V
V ECR Reverse Battery Protection 25 V
V GE G ate-Emitter Voltage ± 15 V
o
IC Collector Current (continuous) at Tc = 25 C 25 A
o
IC Collector Current (continuous) at Tc = 100 C 20 A
I CM (•) Collector Current (pulsed) 100 A
o
P tot T otal Dissipation at Tc = 25 C 125 W
Derating Factor 1 W /o C
o
T s tg Storage T emperature -65 to 175 C
o
Tj Max. Operating Junction Temperature 175 C
(•) Pulse width limited by safe operating area

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STGP10N60L

THERMAL DATA
o
R thj -case Thermal Resistance Junction-case Max 1 C/W
o
R thj -amb Thermal Resistance Junction-ambient Max 62.5 C/W
o
R thc-sink Thermal Resistance Case-sink T yp 0.1 C/W

ELECTRICAL CHARACTERISTICS (Tj = - 40 to 150 oC unless otherwise specified)

OFF
Symbo l Parameter Test Con ditions Min. Typ. Max. Unit
V BR(c es) Collector-Emitt er I C = 250 µA V GE = 0 600 V
Breakdown Voltage
I CES Collector cut-off V CE = Max Rating T j = 25 oC 25 µA
o
(V GE = 0) V CE = Max Rating T j = 125 C 100 µA
IGES Gate-Emitter Leakage V GE = ± 15 V V CE = 0 ± 100 nA
Current (VCE = 0)

ON (∗)
Symbo l Parameter Test Con ditions Min. Typ. Max. Unit
V GE(th) Gate Threshold V CE = V GE IC = 250 µA 0.6 2.4 V
Voltage V CE = V GE I C = 250 µA T j = 25 oC 1.0 2.0 V
V CE(SAT ) Collector-Emitt er V GE = 4.5 V IC = 8 A T j = - 40 oC 1.5 V
Saturation Voltage V GE = 4.5 V IC = 9.5 A Tj = 25 o C 1.4 2.0 V
V GE = 4.5 V IC = 8 A T j = 150 o C 1.25 V
IC Collector Current V GE = 4.5 V V CE = 7 V 15 45 A

DYNAMIC
Symbo l Parameter Test Con ditions Min. Typ. Max. Unit
o
gf s Forward V CE =25 V IC = 8 A Tj = 25 C 7 12 S
Transconductance
C i es Input Capacitance V CE = 25 V f = 1 MHz V GE = 0 1800 2600 pF
C o es Output Capacitance 120 165 pF
C res Reverse Transfer 19 26 pF
Capacitance
QG Gate Charge V CE = 400 V IC = 8 A V GE = 5 V 30 nC

FUNCTIONAL CHARACTERISTICS
Symbo l Parameter Test Con ditions Min. Typ. Max. Unit
I CL Latching Current V clamp = 480 V dV/dt = 200 V/µs 20 A
T j = 125 o C
E CF Forward Clamping T start = 55 o C V cl amp = 480 V 210 mJ
Energy I C = 10 A L = 4.2 mH - Single Pulse
E AR Reverse Avalanche 10 mJ
Energy

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 STGP10N60L

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON
Symbo l Parameter Test Con ditions Min. Typ. Max. Unit
t d(on) Delay Time V CC = 480 V IC = 8 A 0.7 µs
tr Rise Time V GE = 5 V R G = 1 KΩ 1.9 µs
(di/dt) on Turn-on Current Slope V CC = 480 V IC = 8 A 5 A/µs
R G = 1 KΩ V GE = 5 V
Eo n Turn-on T j = 125 o C 2.5 mJ
Switching Losses

SWITCHING OFF
Symbo l Parameter Test Con ditions Min. Typ. Max. Unit
tc Cross-O ver Time V CC = 480 V IC = 8 A 4 µs
t r (v off ) Off Voltage Rise Time R GE = 1 KΩ V GE = 5 V 2.5 µs
tf Fall T ime T j = 25 o C 1.5 µs
E o ff(**) Turn-off Switching Loss 9.0 mJ
tc Cross-O ver Time V CC = 480 V IC = 8 A 6 µs
t r (v off ) Off Voltage Rise Time R GE = 1 KΩ V GE = 5 V 3.3 µs
tf Fall T ime T j = 125 o C 2.5 µs
E o ff(**) Turn-off Switching Loss 10.8 mJ
(•) Pulse width limited by safe operating area
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(**)Losses Include Also The Tail (Jedec Standardization)

Safe Operating Area Thermal Impedance

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STGP10N60L

Output Characteristics Transfer Characteristics

Transconductance Collector-Emitter On Voltage vs Temperature

Collector-Emitter On Voltage vs Collector Capacitance Variations

Current

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 STGP10N60L

Gate Charge vs Gate-Emitter Voltage Latching Current vs Rg

Gate Threshold vs Temperature Off Losses vs Collector Current

Off Losses vs Gate Resistance Off Losses vs Temperature

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STGP10N60L

Switching Off Safe Operatin Area

Fig. 1: Gate Charge test Circuit Fig. 2: Switching Times Test Circuit For
Resistive Load

Fig. 3: Test Circuit For Inductive Load Switching

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 STGP10N60L

TO-220 MECHANICAL DATA

mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
E
A

D
C

D1

L2
F1

G1

H2
G

Dia.
F
F2

L5
L9
L7

L6 L4
P011C

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STGP10N60L

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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
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are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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 1998 STMicroelectronics – Printed in Italy – All Rights Reserved

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