PBSS4330X 2937947
PBSS4330X 2937947
PBSS4330X 2937947
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
- © Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D109
PBSS4330X
30 V, 3 A
NPN low VCEsat (BISS) transistor
Product data sheet 2004 Dec 06
Supersedes data of 2003 Nov 28
NXP Semiconductors Product data sheet
30 V, 3 A
PBSS4330X
NPN low VCEsat (BISS) transistor
APPLICATIONS PINNING
• Power management PIN DESCRIPTION
– DC/DC converters 1 emitter
– Supply line switching 2 collector
– Battery charger 3 base
– LCD backlighting.
• Peripheral drivers
– Driver in low supply voltage applications
(e.g. lamps and LEDs)
– Inductive load driver (e.g. relays, buzzers 2
and motors).
3
DESCRIPTION 1
sym042
NPN low VCEsat transistor in a SOT89 plastic package. 3 2 1
MARKING
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME DESCRIPTION VERSION
PBSS4330X SC-62 plastic surface mounted package; collector pad for good heat SOT89
transfer; 3 leads
2004 Dec 06 2
NXP Semiconductors Product data sheet
30 V, 3 A
PBSS4330X
NPN low VCEsat (BISS) transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter − 50 V
VCEO collector-emitter voltage open base − 30 V
VEBO emitter-base voltage open collector − 6 V
IC collector current (DC) note 4 − 3 A
ICM peak collector current limited by Tj(max) − 5 A
IB base current (DC) − 0.5 A
Ptot total power dissipation Tamb ≤ 25 °C
note 1 − 550 mW
note 2 − 1 W
note 3 − 1.4 W
note 4 − 1.6 W
Tstg storage temperature −65 +150 °C
Tj junction temperature − 150 °C
Tamb ambient temperature −65 +150 °C
Notes
1. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; standard footprint.
2. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 1 cm2.
3. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 6 cm2.
4. Device mounted on a ceramic printed-circuit board 7 cm2, single-sided copper, tin-plated.
2004 Dec 06 3
NXP Semiconductors Product data sheet
30 V, 3 A
PBSS4330X
NPN low VCEsat (BISS) transistor
MLE372
2
handbook, halfpage
Ptot
(W)
(1)
1.6
(2)
1.2
(3)
0.8
(4)
0.4
0
0 40 80 120 160
Tamb (°C)
2004 Dec 06 4
NXP Semiconductors Product data sheet
30 V, 3 A
PBSS4330X
NPN low VCEsat (BISS) transistor
THERMAL CHARACTERISTICS
Notes
1. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; standard footprint.
2. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 1 cm2.
3. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 6 cm2.
4. Device mounted on a ceramic printed-circuit board 7 cm2, single-sided copper, tin-plated.
006aaa243
103
1 0
10−1
10−5 10−4 10−3 10−2 10−1 1 10 102 103
tp (s)
2004 Dec 06 5
NXP Semiconductors Product data sheet
30 V, 3 A
PBSS4330X
NPN low VCEsat (BISS) transistor
006aaa244
103
Zth(j-a)
(K/W) duty cycle =
1.00
102
0.75
0.50
0.33
0.20
0.10
10
0.05
0.02
0.01
1 0
10−1
10−5 10−4 10−3 10−2 10−1 1 10 102 103
tp (s)
006aaa245
103
Zth(j-a)
(K/W)
duty cycle =
102 1.00
0.75
0.50
0.33
0.20
10 0.10
0.05
0.02
0.01
1
0
10−1
10−5 10−4 10−3 10−2 10−1 1 10 102 103
tp (s)
2004 Dec 06 6
NXP Semiconductors Product data sheet
30 V, 3 A
PBSS4330X
NPN low VCEsat (BISS) transistor
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
2004 Dec 06 7
NXP Semiconductors Product data sheet
30 V, 3 A
PBSS4330X
NPN low VCEsat (BISS) transistor
MRC321 MRC322
800 1.2
handbook, halfpage handbook, halfpage
(2)
400
(3) (3)
0.4
200
0 0
10−1 1 10 102 103 104 10−1 1 10 102 103 104
IC (mA) IC (mA)
VCE = 2 V. VCE = 2 V.
(1) Tamb = 100 °C. (1) Tamb = −55 °C.
(2) Tamb = 25 °C. (2) Tamb = 25 °C.
(3) Tamb = −55 °C. (3) Tamb = 100 °C.
MRC323 MRC324
1 1
handbook, halfpage handbook, halfpage
VCEsat VCEsat
(V) (V)
10−1 10−1
(1) (1)
(2)
(2)
10−2 10−2
(3)
(3)
10−3 10−3
10−1 1 10 102 103 104 10−1 1 10 102 103 104
IC (mA) IC (mA)
2004 Dec 06 8
NXP Semiconductors Product data sheet
30 V, 3 A
PBSS4330X
NPN low VCEsat (BISS) transistor
MRC325 MRC326
1.2 5
handbook, halfpage handbook, halfpage (1)
VBEsat IC
(2)
(V) (A) (3)
4 (4)
1.0
(5)
(1)
(6)
(2) 3 (7)
0.8
(8)
(3)
0.6 2 (9)
(10)
0.4 1
0.2 0
10−1 1 10 102 103 104 0 0.4 0.8 1.2 1.6 2.0
IC (mA) VCE (V)
IC/IB = 20. Tamb = 25 °C. (4) IB = 17.5 mA. (8) IB = 7.5 mA.
(1) Tamb = −55 °C. (1) IB = 25.0 mA. (5) IB = 15.0 mA. (9) IB = 5.0 mA.
(2) Tamb = 25 °C. (2) IB = 22.5 mA. (6) IB = 12.5 mA. (10) IB = 2.5 mA.
(3) Tamb = 100 °C. (3) IB = 20.0 mA. (7) IB = 10.0 mA.
MRC327 MRC328
102 103
handbook, halfpage handbook, halfpage
RCEsat RCEsat
(Ω) (Ω)
102
10
10
1
(2) (1)
1
(1)
(2) (3)
10−1
10−1
(3)
10−2 −1 10−2
10 1 10 102 103 104 10−1 1 10 102 103 104
IC (mA) IC (mA)
(1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. (1) IC/IB = 10. (2) IC/IB = 5. (3) IC/IB = 1.
2004 Dec 06 9
NXP Semiconductors Product data sheet
30 V, 3 A
PBSS4330X
NPN low VCEsat (BISS) transistor
PACKAGE OUTLINE
Plastic surface-mounted package; collector pad for good heat transfer; 3 leads SOT89
D B
bp3
E
HE
Lp
1 2 3
bp2 c
w M bp1
e1
0 2 4 mm
scale
04-08-03
SOT89 TO-243 SC-62
06-03-16
2004 Dec 06 10
NXP Semiconductors Product data sheet
30 V, 3 A
PBSS4330X
NPN low VCEsat (BISS) transistor
DOCUMENT PRODUCT
DEFINITION
STATUS(1) STATUS(2)
Objective data sheet Development This document contains data from the objective specification for product
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
2004 Dec 06 11
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands R75/03/pp12 Date of release: 2004 Dec 06 Document order number: 9397 750 13882
Mouser Electronics
Authorized Distributor
Nexperia:
PBSS4330X,135 PBSS4330X,115