IRF3205Z
IRF3205Z
IRF3205Z
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10/7/03
IRF3205ZS/L
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IRF3205ZS/L
1000 1000
VGS VGS
TOP 15V TOP 15V
10V 10V
8.0V 8.0V
ID, Drain-to-Source Current (A)
100
10
1000 120
T J = 175°C
T J = 25°C
Gfs, Forward Transconductance (S)
100
ID, Drain-to-Source Current ( A)
T J = 175°C
100 80
60 T J = 25°C
10 40
20 VDS = 10V
VDS = 25V
20µs PULSE WIDTH
20µs PULSE WIDTH
1 0
4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 0 20 40 60 80 100
VGS, Gate-to-Source Voltage (V) ID, Drain-to-Source Current (A)
6000 20
VGS = 0V, f = 1 MHZ ID= 66A
C iss = C gs + C gd, C ds SHORTED
VDS= 44V
4000
Ciss 12
3000
8
2000
4
1000 Coss
Crss
0
0
1 10 100
0 20 40 60 80 100 120
QG Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
1000.0 10000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000
100.0 T J = 175°C
100
10.0 100µsec
T J = 25°C 10
1.0 1msec
1
Tc = 25°C 10msec
Tj = 175°C
VGS = 0V Single Pulse
0.1 0.1
0.2 0.6 1.0 1.4 1.8 2.2 1 10 100 1000
VSD, Source-toDrain Voltage (V) VDS , Drain-toSource Voltage (V)
120 2.5
2.0
ID , Drain Current (A)
80
(Normalized)
60 1.5
40
1.0
20
0
0.5
25 50 75 100 125 150 175
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T C , Case Temperature (°C)
T J , Junction Temperature (°C)
D = 0.50
Thermal Response ( Z thJC )
0.20
0.1 0.10
0.05
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006 1E-005 0.0001 0.001 0.01 0.1
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IRF3205ZS/L
350
15V
ID
RG D.U.T +
V
200
- DD
IAS A
VGS
20V
tp 0.01Ω 150
100
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
50
tp
0
25 50 75 100 125 150 175
I AS
Fig 12c. Maximum Avalanche Energy
Fig 12b. Unclamped Inductive Waveforms
Vs. Drain Current
QG
10 V
QGS QGD 4.0
VGS(th) Gate threshold Voltage (V)
VG
ID = 250µA
3.0
Charge
Fig 13a. Basic Gate Charge Waveform
2.0
L
VCC
DUT
0 1.0
1K -75 -50 -25 0 25 50 75 100 125 150 175
T J , Temperature ( °C )
Fig 13b. Gate Charge Test Circuit Fig 14. Threshold Voltage Vs. Temperature
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IRF3205ZS/L
1000
Duty Cycle = Single Pulse
0.1
1.0E-08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
160
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
120
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
80 4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
40
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
0
tav = Average time in avalanche.
25 50 75 100 125 150 175 D = Duty cycle in avalanche = tav ·f
Starting T J , Junction Temperature (°C) ZthJC(D, tav) = Transient thermal resistance, see figure 11)
*
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
- • Low Leakage Inductance D.U.T. ISD Waveform
Current Transformer
+
Reverse
-
+
Recovery
Current
Body Diode Forward
Current
- di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD
Ripple ≤ 5% ISD
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
RD
VDS
VGS
D.U.T.
RG
+
-VDD
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
VDS
90%
10%
VGS
td(on) tr t d(off) tf
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IRF3205ZS/L
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
10.54 (.415) 3.78 (.149) -B-
2.87 (.113) 10.29 (.405) 3.54 (.139) 4.69 (.185)
2.62 (.103) 4.20 (.165)
-A- 1.32 (.052)
1.22 (.048)
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
1.15 (.045) LEAD ASSIGNMENTS
MIN 1 - GATE
1 2 3 2 - DRAIN
3 - SOURCE
4 - DRAIN
14.09 (.555)
13.47 (.530) 4.06 (.160)
3.55 (.140)
For GB Production
EXAMPLE: T HIS IS AN IRF1010
LOT CODE 1789
AS S EMBLED ON WW 19, 1997 INTERNATIONAL PART NUMBER
IN T HE AS S EMBLY LINE "C" RECT IFIER
LOGO
DAT E CODE
LOT CODE
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IRF3205ZS/L
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
DAT E CODE
LOT CODE
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IRF3205ZS/L
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
IGBT
1- GATE
2- COLLEC-
TOR
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IRF3205ZS/L
D2Pak Tape & Reel Information
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
4.10 (.161) 1.50 (.059)
3.90 (.153) 0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
30.40 (1.197)
NOTES : MAX.
1. COMFORMS TO EIA-418. 26.40 (1.039) 4
2. CONTROLLING DIMENSION: MILLIMETER. 24.40 (.961)
3. DIMENSION MEASURED @ HUB.
3
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
Notes:
Repetitive rating; pulse width limited by Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
max. junction temperature. (See fig. 11). avalanche performance.
Limited by TJmax, starting TJ = 25°C, L = 0.08mH This value determined from sample failure population. 100%
RG = 25Ω, IAS = 66A, VGS =10V. Part not tested to this value in production.
recommended for use above this value. This is only applied to TO-220AB pakcage.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%. This is applied to D2Pak, when mounted on 1" square PCB (FR-
Coss eff. is a fixed capacitance that gives the 4 or G-10 Material). For recommended footprint and soldering
same charging time as Coss while VDS is rising
techniques refer to application note #AN-994.
from 0 to 80% VDSS .
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 10/03
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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/