Nothing Special   »   [go: up one dir, main page]
Scribd Logo
Upload

Welcome to Scribd!

  • 17 views

    P0603BD

    Uploaded by

    CarlosBayonaMontenegro
    This document provides specifications for an N-channel enhancement mode MOSFET. Key specifications include: - Maximum drain-source voltage of 30V. On-resistance between 5.8-9.0mΩ when gate-source voltage is 10V and drain current is 30A. - Continuous drain current rating of 70A at an ambient temperature of 25°C and 44A at 100°C. Pulsed drain current rating of 180A. - Maximum power dissipation of 51W at 25°C ambient temperature and 20W at 100°C. Junction to ambient thermal resistance of 62.5°C/W.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    P0603BD

    Uploaded by

    CarlosBayonaMontenegro
    17 views5 pages
    This document provides specifications for an N-channel enhancement mode MOSFET. Key specifications include: - Maximum drain-source voltage of 30V. On-resistance between 5.8-9.0mΩ when gate-source voltage is 10V and drain current is 30A. - Continuous drain current rating of 70A at an ambient temperature of 25°C and 44A at 100°C. Pulsed drain current rating of 180A. - Maximum power dissipation of 51W at 25°C ambient temperature and 20W at 100°C. Junction to ambient thermal resistance of 62.5°C/W.

    Original Description:

    Copyright

    © © All Rights Reserved

    Available Formats

    PDF, TXT or read online from Scribd

    Did you find this document useful?

    Is this content inappropriate?

    This document provides specifications for an N-channel enhancement mode MOSFET. Key specifications include: - Maximum drain-source voltage of 30V. On-resistance between 5.8-9.0mΩ when gate-source voltage is 10V and drain current is 30A. - Continuous drain current rating of 70A at an ambient temperature of 25°C and 44A at 100°C. Pulsed drain current rating of 180A. - Maximum power dissipation of 51W at 25°C ambient temperature and 20W at 100°C. Junction to ambient thermal resistance of 62.5°C/W.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    17 views5 pages

    P0603BD

    Uploaded by

    CarlosBayonaMontenegro
    This document provides specifications for an N-channel enhancement mode MOSFET. Key specifications include: - Maximum drain-source voltage of 30V. On-resistance between 5.8-9.0mΩ when gate-source voltage is 10V and drain current is 30A. - Continuous drain current rating of 70A at an ambient temperature of 25°C and 44A at 100°C. Pulsed drain current rating of 180A. - Maximum power dissipation of 51W at 25°C ambient temperature and 20W at 100°C. Junction to ambient thermal resistance of 62.5°C/W.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 5

    P0603BD

    N-Channel Enhancement Mode MOSFET

    PRODUCT SUMMARY
    V(BR)DSS RDS(ON) ID

    30V 5.8mΩ @VGS = 10V 70A

    TO-252

    ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)


    PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS
    Drain-Source Voltage VDS 30
    V
    Gate-Source Voltage VGS ±20
    TC = 25 °C 70
    Continuous Drain Current ID
    TC = 100 °C 44
    1
    A
    Pulsed Drain Current IDM 180
    Avalanche Current IAS 49
    Avalanche Energy L = 0.1mH EAS 120 mJ
    TC = 25 °C 51
    Power Dissipation PD W
    TC = 100 °C 20
    Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 °C
    1 TL
    Lead Temperature ( /16" from case for 10 sec.) 275 °C

    THERMAL RESISTANCE RATINGS


    THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS
    Junction-to-Case RqJC 2.45
    °C / W
    Junction-to-Ambient RqJA 62.5
    1
    Pulse width limited by maximum junction temperature.

    Ver 1.1 1 2013-3-14


    P0603BD
    N-Channel Enhancement Mode MOSFET

    ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)


    LIMITS
    PARAMETER SYMBOL TEST CONDITIONS UNIT
    MIN TYP MAX
    STATIC
    Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250mA 30
    V
    Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250mA 1.0 1.6 3.0
    Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±250 nA
    VDS = 24V, VGS = 0V 1
    Zero Gate Voltage Drain Current IDSS mA
    VDS = 20V, VGS = 0V , TJ = 125 °C 10
    On-State Drain Current1 ID(ON) VDS = 10V, VGS = 10V 70 A
    Drain-Source On-State VGS = 4.5V, ID = 30A 6.2 9.0
    RDS(ON) mΩ
    Resistance1 VGS = 10V, ID = 30A 4.6 5.8
    Forward Transconductance1 gfs VDS = 5V, ID = 20A 90 S
    DYNAMIC
    Input Capacitance Ciss 2110
    Output Capacitance Coss VGS = 0V, VDS = 15V, f = 1MHz 469 pF
    Reverse Transfer Capacitance Crss 336
    Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 1.4 Ω
    2 Qg
    Total Gate Charge 44
    2 Qgs VDS = 15V, VGS = 10V, ID = 25A
    Gate-Source Charge 8 nC
    2 Qgd
    Gate-Drain Charge 9
    2 td(on)
    Turn-On Delay Time 23
    2 tr
    Rise Time VDD = 15V, 36
    nS
    Turn-Off Delay Time 2 td(off) ID @ 25A, VGS = 10V, RGEN = 25Ω 88
    Fall Time2 tf 35
    SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
    Continuous Current IS 39 A
    1 VSD IF = IS, VGS = 0V
    Forward Voltage 1.3 V
    Reverse Recovery Time trr VGS = 0V, IS = 30A, 55 nS
    Reverse Recovery Charge Qrr dlF/dt = 100A / μS 25 nC
    1
    Pulse test : Pulse Width  300 msec, Duty Cycle  2％.
    2
    Independent of operating temperature.

    Ver 1.1 2 2013-3-14


    P0603BD
    N-Channel Enhancement Mode MOSFET

    Ver 1.1 3 2013-3-14


    P0603BD
    N-Channel Enhancement Mode MOSFET

    Ver 1.1 4 2013-3-14


    P0603BD
    N-Channel Enhancement Mode MOSFET

    Ver 1.1 5 2013-3-14

    You might also like