STP4NK60Z,

STP4NK60ZFP
N-channel 600 V, 1.7 Ω typ., 4 A Zener-protected SuperMESH™
Power MOSFETs in TO-220 and TO-220FP packages
Datasheet - production data

Features
Order codes VDS RDS(on) max. PTOT ID

TAB STP4NK60Z
600 V 2Ω 70 W 4A
STP4NK60ZFP

• 100% avalanche tested

3 3
1
2
1
2
• Very low intrinsic capacitances
TO-220 TO-220FP • Zener-protected

Applications
• Switching applications
Figure 1. Internal schematic diagram
D(2, TAB) Description
These devices are N-channel Zener-protected
Power MOSFETs developed using
STMicroelectronics' SuperMESH™ technology,
achieved through optimization of ST's well
G(1) established strip-based PowerMESH™ layout. In
addition to a significant reduction in on-
resistance, this device is designed to ensure a
high level of dv/dt capability for the most
demanding applications.

S(3)
AM01476v1

Table 1. Device summary

Order codes Marking Packages Packaging

STP4NK60Z P4NK60Z TO-220

Tube
STP4NK60ZFP P4NK60ZFP TO-220FP

January 2014 DocID025020 Rev 2 1/16

This is information on a product in full production. www.st.com

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 Contents STP4NK60Z, STP4NK60ZFP

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Test circuits .............................................. 9

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

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 STP4NK60Z, STP4NK60ZFP Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Value
Symbol Parameter Unit
TO-220 TO-220FP

VDS Drain-source voltage 600 V

VGS Gate- source voltage ± 30 V
ID (1)
Drain current (continuous) at TC = 25 °C 4 4 A
ID (1)
Drain current (continuous) at TC = 100 °C 2.5 2.5 A
IDM (2) Drain current (pulsed) 16 16(1) A
PTOT Total dissipation at TC = 25 °C 70 25 W
Derating factor 0.56 0.2 W/°C
Gate-source human body model (C=100 pF, R=1.5
ESD 3 kV
kΩ)
dv/dt (3) Peak diode recovery voltage slope 4.5 V/ns
Insulation withstand voltage (RMS) from all three
VISO 2500 V
leads to external heat sink (t=1 s; TC=25 °C)
Tstg Storage temperature -55 to 150 °C
Tj Max operating junction temperature 150 °C
1. Limited by maximum junction temperature.
2. Pulse width limited by safe operating area
3. ISD ≤ 4 A, di/dt ≤ 200 A/μs, VDD ≤ V(BR)DSS, TJ ≤ TJMAX.

Table 3. Thermal data

Value
Symbol Parameter Unit
TO-220 TO-220FP

Rthj-case Thermal resistance junction-case max 1.79 5 °C/W

Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W

Table 4. Avalanche characteristics

Symbol Parameter Value Unit

Avalanche current, repetitive or not-repetitive

IAR 4 A
(pulse width limited by Tj max)
Single pulse avalanche energy
EAS 120 mJ
(starting TJ = 25 °C, ID=IAR, VDD= 50 V)

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 Electrical characteristics STP4NK60Z, STP4NK60ZFP

2 Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 5. On/off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

Drain-source
V(BR)DSS ID =1 mA 600 V
breakdown voltage
Zero gate voltage VDS = 600 V 1 μA
IDSS
drain current (VGS = 0) VDS = 600 V, TC = 125 °C 50 μA
Gate-body leakage
IGSS VGS = ± 20 V ± 10 μA
current (VDS = 0)
VGS(th) Gate threshold voltage VDS = VGS, ID = 50 μA 3 3.75 4.5 V
Static drain-source on
RDS(on) VGS = 10 V, ID = 2 A 1.7 2 Ω
resistance

Table 6. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit

gfs (1) Forward transconductance VDS = 15 V, ID = 2 A - 3 S

Ciss Input capacitance - 510 pF
VDS = 25 V, f = 1 MHz,
Coss Output capacitance - 67 pF
VGS = 0
Crss Reverse transfer capacitance - 13 pF
Equivalent output
Coss eq. (2) VDS =0, VDS = 0 to 480 V - 38.5 pF
capacitance
td(on) Turn-on delay time - 12 ns
VDD = 300 V, ID = 2 A,
tr Rise time - 9.5 ns
RG = 4.7 Ω, VGS = 10 V
td(off) Turn-off delay time - 29 ns
(see Figure 17)
tf Fall time - 16.5 ns
tr(Voff) Off-voltage rise time VDD = 480 V, ID = 4 A, - 12 ns
tr Fall time RG = 4.7 Ω, VGS = 10 V - 12 ns
tc Cross-over time (see Figure 19) - 19.5 ns
Qg Total gate charge VDD = 480 V, ID = 4 A, - 18.8 26 nC
Qgs Gate-source charge VGS = 10 V - 3.8 nC
Qgd Gate-drain charge (see Figure 18) - 9.8 nC
1. Pulsed: pulse duration=300μs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS.

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 STP4NK60Z, STP4NK60ZFP Electrical characteristics

Table 7. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

ISD Source-drain current - 4 A

ISDM(1) Source-drain current (pulsed) - 16 A
VSD(2) Forward on voltage ISD = 4 A, VGS = 0 - 1.6 V
trr Reverse recovery time ISD = 4 A, di/dt = 100 A/μs - 400 ns
Qrr Reverse recovery charge VDD = 24 V, Tj = 150 °C - 1700 nC
IRRM Reverse recovery current (see Figure 19) - 8.5 A
1. Pulsed: pulse duration = 300 μs, duty cycle 1.5%
2. Pulse width limited by safe operating area

Table 8. Gate-source Zener diode

Symbol Parameter Test conditions Min Typ. Max. Unit

V(BR)GSO Gate-source breakdown voltage IGS = ± 1mA, ID=0 30 - - V

The built-in back-to-back Zener diodes have been specifically designed to enhance not only
the device’s ESD capability, but also to make them capable of safely absorbing any voltage
transients that may occasionally be applied from gate to source. In this respect, the Zener
voltage is appropriate to achieve efficient and cost-effective protection of device integrity.
The integrated Zener diodes thus eliminate the need for external components.

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 Electrical characteristics STP4NK60Z, STP4NK60ZFP

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area for TO-220 Figure 3. Thermal impedance for TO-220

Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP

Figure 6. Output characteristics Figure 7. Transfer characteristics

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 STP4NK60Z, STP4NK60ZFP Electrical characteristics

Figure 8. Transconductance Figure 9. Static drain-source on-resistance

Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations

Figure 12. Normalized gate threshold voltage vs Figure 13. Normalized RDS(on) vs temperature
temperature

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 Electrical characteristics STP4NK60Z, STP4NK60ZFP

Figure 14. Source-drain diode forward Figure 15. Normalized VDS vs temperature
characteristic

Figure 16. Avalanche energy vs temperature

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 STP4NK60Z, STP4NK60ZFP Test circuits

3 Test circuits

Figure 17. Switching times test circuit for Figure 18. Gate charge test circuit
resistive load
VDD

12V 47kΩ
1kΩ
100nF
RL 2200 3.3
μF μF
VDD IG=CONST
VD Vi=20V=VGMAX 100Ω D.U.T.
VGS 2200
RG D.U.T. μF 2.7kΩ VG

PW
47kΩ

PW 1kΩ
AM01468v1 AM01469v1

Figure 19. Test circuit for inductive load Figure 20. Unclamped inductive load test circuit
switching and diode recovery times

L
A A A
D
FAST L=100μH VD
G D.U.T. DIODE 2200 3.3
μF μF VDD
S B 3.3 1000
B B μF μF
25 Ω VDD ID
D

RG S
Vi D.U.T.

Pw
AM01470v1 AM01471v1

Figure 21. Unclamped inductive waveform Figure 22. Switching time waveform
V(BR)DSS ton toff
tr tdoff tf
VD tdon

90% 90%
IDM
10%
ID 10% VDS
0

VDD VDD 90%

VGS

AM01472v1 0 10% AM01473v1

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 Package mechanical data STP4NK60Z, STP4NK60ZFP

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of

ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.

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 STP4NK60Z, STP4NK60ZFP Package mechanical data

Figure 23. TO-220 type A drawing

BW\SH$B5HYB7

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 Package mechanical data STP4NK60Z, STP4NK60ZFP

Table 9. TO-220 type A mechanical data

mm
Dim.
Min. Typ. Max.

A 4.40 4.60
b 0.61 0.88
b1 1.14 1.70
c 0.48 0.70
D 15.25 15.75
D1 1.27
E 10 10.40
e 2.40 2.70
e1 4.95 5.15
F 1.23 1.32
H1 6.20 6.60
J1 2.40 2.72
L 13 14
L1 3.50 3.93
L20 16.40
L30 28.90
∅P 3.75 3.85
Q 2.65 2.95

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 STP4NK60Z, STP4NK60ZFP Package mechanical data

Figure 24. TO-220FP drawing

7012510_Rev_K_B

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 Package mechanical data STP4NK60Z, STP4NK60ZFP

Table 10. TO-220FP mechanical data

mm
Dim.
Min. Typ. Max.

A 4.4 4.6
B 2.5 2.7
D 2.5 2.75
E 0.45 0.7
F 0.75 1
F1 1.15 1.70
F2 1.15 1.70
G 4.95 5.2
G1 2.4 2.7
H 10 10.4
L2 16
L3 28.6 30.6
L4 9.8 10.6
L5 2.9 3.6
L6 15.9 16.4
L7 9 9.3
Dia 3 3.2

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 STP4NK60Z, STP4NK60ZFP Revision history

5 Revision history

Table 11. Document revision history

Date Revision Changes

First release. Part numbers previously included in datasheet

19-Jul-2013 1
DocID8882
– Modified: figure in cover page
22-Jan-2014 2
– Minor text changes

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 STP4NK60Z, STP4NK60ZFP

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