8N60

Surface Mount N-Channel Power MOSFET

P b Lead(Pb)-Free DRAIN CURRENT
8 AMPERES

Description: DRAIN SOURCE VOLTAGE

600 VOLTAGE
The WEITRON 8N60 is a high voltage and high current power
MOSFET, designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and have
a high rugged avalanche characteristics. This power MOSFET is
usually used at high speed switching applications in power
supplies, PMW motor controls, high efficient DC to DC converters
and bridge circuits.
2 DRAIN
TO-220
Features:
* 8.0A, 600V,RDS(ON) =1.2 Ohms @VGS =10V
* Ultra low gate charge 1 GATE
* Low reverse transfer capacitance
* Fast switching capability
3
* Avalanche energy specified SOURCE
* Improved dv/dt capability, high ruggedness TO-220F
Maximum Ratings(T A =25 C Unless Otherwise Specified)
Rating Symbol Value Unit
Drain-Source Voltage VDSS 600
V
Gate-Source Voltage VGSS 30

Avalanche Current - (Note 1) I AR 8.0

Continuous Drain Current @TC = 25°C 8.0
ID A
@TC = 100°C 4.6
Pulsed Drain Current, TP Limited by TJMAX - (Note 1) IDM 28

Avalanche Energy, Single Pulsed (Note 2) E AS 624 mJ

Avalanche Energy, Repetitive (Note 1) E AR 14.7 mJ
Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns
Total Power Dissipation TO-220 147
PD 48 W
TO-220F
Junction Temperature TJ +150 ˚C

Operating and Storage Temperature Topr,Tstg -55~+150 ˚C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

WEITRON 1/8 01-Apr-2011

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 8N60
Electrical Characteristics (TA = 25℃ Unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

Static
Drain-Source Breakdown Voltage @V GS=0,ID=250μA BVDSS 600 - -
V
Gate Threshold Voltage @V DS=VGS,ID=250μA VGS(Th) 2.0 - 4.0
Gate-Source Leakage current Forward@V GS=30V,V DS=0V - - 100 nA
IGSS
ReVerse@V GS=-30V,VDS=0V - - -100
Drain-SourceLeakage Current(Tj=25˚C) @VDS=600V,VGS=0 IDSS - - 10 μA

Drain-Source On-State Resistance @VGS=10V,I D=4.0A RDS(on) - 1.0 1.2 Ω

Breakdown Voltage Temperature Coefficient ∆BV DSS

- 0.7 - V/˚C
I D =250 µA, Referenced to 25°C /∆TJ

Dynamic
Input Capacitance @VGS=0V,VDS=25V,f=1.0MHz Ciss - 1095 -

Output Capacitance @VGS=0V,VDS=25V,f=1.0MHz Coss - 93 - pF

Reverse Transfer Capacitance @VGS=0V,VDS=25V,f=1.0MHz Crss - 12 -

Switching
Turn-on Delay Time
td(on) - 15 -
VDD =300V,ID =7.5A,R G=25Ω(Note 4, 5)
Turn-on Rise Time
tr - 58 -
VDD =300V,ID =7.5A,R G=25Ω(Note 4, 5)
ns
Turn-off Delay Time td(off) - 80 -
VDD =300V,ID =7.5A,R G=25Ω(Note 4, 5)
Turn-off Fall Time
VDD =300V,ID =7.5A,R G=25Ω(Note 4, 5) tf - 61 -

Total Gate Charge

Qg - 26.8 -
VDS =480V,ID =7.5A,VGS =10V(Note 4, 5)
Gate-Source Charge Qgs - 5.1 - nC
VDS =480V,ID =7.5A,VGS =10V(Note 4, 5)
Gate-Drain Change
Qgd - 12 -
VDS =480V,ID =7.5A,VGS =10V(Note 4, 5)

WEITRON 2/8 01-Apr-2011

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 8N60
Electrical Characteristics (TA = 25℃ Unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

Source-Drain Diode Characteristics

Drain-Source Diode Forward Voltage @VGS=0V,IS=8.0A VSD - - 1.4 V

Maximum Continuous Drain-Source Diode Forward Current IS - - 8.0 A

Maximum Pulsed Drain-Source Diode Forward Current I SM - - 28 A

Reverse Recovery Time @VGS=0V,IS=7.5A,dlF/dt=100A/µs (Note 4) T rr - 365 - ns

Reverse Recovery Charge

Q rr - 3.4 - µC
@VGS=0V,IS=7.5A,dlF/dt=100A/µs(Note 4)

Thermal Data
Characteristic Symbol Value Unit
Junction-to-Ambient TO-220 62.5
RJA °C/W
TO-220F 120

Junction-to-Case TO-220 RJC 0.85 °C/W

TO-220F 2.6
Note: 1. Repetitive Rating : Pulse width limited by TJ
2. L = 30mH, IAS = 5.64A, VDD = 185V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 7.5A, di/dt ≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature

Ordering Information
Pin Assignment
Order Number Package Packing
1 2 3
8N60P TO-220 G D S Tube

8N60F TO-220F G D S Tube

WEITRON 3/8 01-Apr-2011

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 8N60
Test Circuits And Waveforms
D.U.T. +

VDS

- L

RG
Driver VDD
* dv/dt controlled by RG
Same Type * I SD controlled by pulse period
VGS * D.U.T.-Device Under Test
as D.U.T.

Fig. 1A Peak Diode Recovery dv/dt Test Circuit

VGS Period P. W.
D=
(Driver) P.W. Period

VGS= 10V

I FM, Body Diode Forward Current

ISD
(D.U.T.) di/dt

IRM

Body Diode Reverse Current

Body Diode Recovery dv/dt

VDS
(D.U.T.) VDD

Body Diode Forward Voltage Drop

Fig. 1B Peak Diode Recovery dv/dt Waveforms

WEITRON 4/8 01-Apr-2011

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 8N60
Test Circuits And Waveforms(cont.)
RL
VDS
VDS 90%

VGS VDD
RG

10%
VGS
D.U.T.
10V t D(ON ) tD (OFF)
tR tF

Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms

Same Type
50kΩ as D.U.T.
QG
12V 10V
0.2 μF 0.3 μF
VDS
QGS QGD
VGS

DUT
VG
3mA

Charge

Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform

L
VDS

BVDSS

RD
VDD

10V D.U.T.
tp IAS
tp Time

Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms

WEITRON 5/8 01-Apr-2011

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 8N60
Typical Characteristics

On-Resistance Variation vs. Drain Current Body Diode Forward Voltage vs. Source
and Gate Voltage Current
Drain-Source On-Resistance, RDS(ON)

6
10
Reverse Drain Current, IDR (A)

5
VGS=10V 150°C
4
25 °C
(ohm)

3
1
2 VGS=20V
Notes:
1 1. VGS=0V
Note: TJ=25 °C 2. 250µs Test
0 0.1
0 5 10 15 20 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Drain Current, ID (A) Source-Drain Voltage, VSD (V)

Capacitance Characteristics Gate Charge Characteristics

(Non-Repetitive)
12
1900 Ciss=Cgs+Cgd (Cds=shorted)
Coss=Cds+Cgd Crss=Cgd
1700 Ciss 10
1500 VDS=300V
1300 8 VDS=480V
1100 Coss VDS=120V
6
900
700 Crss
4
500
Notes: 2
300 1. V =0V
GS
100 2. f = 1MHz Note: ID=8A
0 0
0.1 1 10 0 5 10 15 20 25 30

Drain-SourceVoltage, VDS (V) Total Gate Charge, QG (nC)

WEITRON 6/8 01-Apr-2011

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 8N60
Typical Characteristics
Breakdown Voltage Variation vs.
On-Resistance Junction Temperature
Temperature
1.2 3.0

2.5
1.1
2.0

1.0 1.5

1.0
0.9 Note: Note:
1. VGS=0V 0.5 1. VGS=10V
2. ID=250µA 2. ID=4A
0.8 0.0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200
Junction Temperature, TJ (℃) Junction Temperature, TJ (℃)

Maximum Drain Current vs. Case

Maximum Safe Operating Area Temperature
100 Operation in This Area is Limited by RDS(on)
10

100µs
8
Drain Current, ID (A)
Drain Current, ID (A)

100µs
10 1ms
6
10ms
DC
4
1 Notes:
1. TJ=25℃
2. TJ=150℃ 2
3. Single Pulse
0.1 0
1 10 100 1000 25 50 75 100 125 150
Drain-Source Voltage, VDS (V) Case Temperature, TC (℃)

Transient Thermal Response

Curve
1
D=0.5

D=0.2
D=0.1
0.1 D=0.05
0.02
0.01 Notes:
1. θJC (t) = 0.85℃/W Max.
Single pulse 2. Duty Factor, D=t1/t2
0.01 3. TJM-TC=PDM×θJC (t)

10-5 10-4 10-3 10-2 10-1 100 101

Square Wave Pulse Duration, t1 (sec)

WEITRON 7/8 01-Apr-2011

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 8N60
TO-220 Outline Dimensions Unit:mm

D
A TO-220
C1 Dim M in M ax
Ø A 4.47 4.67
F
A1 2.52 2.82
B 0.71 0.91
H B1 1.37
1.17
C 0.31 0.53
E1
E C1 1.17 1.37
D 10.01 10.31
E 8.50 8.90
B1 L1 A1 E1 12.06 12.446
B G 2.54 TYP
G1
L

4.98 5.18
F 2.59 2.89
H 0.00 0.30
G C L 13.4 13.8
G1 L1 3.56 3.96
Φ 3.73 3.93

TO-220F Outline Dimensions Unit:mm

TO-220F
Symbol Dimension 1 Dimension 2
A 3.3±0.15 2.70±0.75
B 2.55±0.20 3.0±0.20
C 4.72±0.2 4.5±0.20
D 1.47MAX 1.75MAX
L 15.75±0.30 15±0.30

WEITRON 8/8 01-Apr-2011

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