Advanced Power Electronics Corp.: Description
Advanced Power Electronics Corp.: Description
Advanced Power Electronics Corp.: Description
Halogen-Free Product
Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol Parameter Rating Units
VDS Drain-Source Voltage 500 V
VGS Gate-Source Voltage +30 V
3
ID@TC=25℃ Drain Current, VGS @ 10V 7 A
1
IDM Pulsed Drain Current 21 A
PD@TC=25℃ Total Power Dissipation 83.3 W
5
PD@TA=25℃ Total Power Dissipation 2 W
4
EAS Single Pulse Avalanche Energy 24.5 mJ
TSTG Storage Temperature Range -55 to 150 ℃
TJ Operating Junction Temperature Range -55 to 150 ℃
Thermal Data
Symbol Parameter Value Units
Rthj-c Maximum Thermal Resistance, Junction-case 1.5 ℃/W
Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount)5 62.5 ℃/W
1
201703292
AP50WN1K0H
Notes:
1.Pulse width limited by max. junction temperature.
2.Pulse test
3.Ensure that the junction temperature does not exceed TJmax..
4.Starting Tj=25oC , VDD=50V , L=1mH , RG=25Ω
5.Surface mounted on 1 in2 copper pad of FR4 board
2
AP50WN1K0H
16 10
o 10V o
T C =25 C T C =150 C 10V
8.0V
8.0V
7.0V 8
7.0V
6.0V
ID , Drain Current (A)
4
2
0 0
0 10 20 30 40 0 10 20 30 40
1 4
I D =3.5A I D =3.5A
o
T C =25 C V G =10V
Normalized RDS(ON)
0.9
RDS(ON) (Ω)
.
0.8
0.7 0
2 4 6 8 10 -100 -50 0 50 100 150
o
V GS Gate-to-Source Voltage (V) T j , Junction Temperature ( C )
I D =250uA
8 1.6
Normalized VGS(th)
IS (A)
6 1.2
T j = 150 o C T j = 25 o C
4 0.8
2 0.4
0 0
0 0.2 0.4 0.6 0.8 1 1.2 -100 -50 0 50 100 150
V SD (V) o
T j , Junction Temperature ( C )
3
AP50WN1K0H
12
f=1.0MHz
2000
I D =3.5A
10
V DS =400V
VGS , Gate to Source Voltage (V)
1600
1200
0.37Ω
C (pF)
6
800 C iss
4
400
2
C oss
C rss
0 0
0 8 16 24 32 0 100 200 300 400 500 600
100 1
Normalized Thermal Response (Rthjc)
Duty factor=0.5
10
Operation in this area
limited by RDS(ON)
0.2
10us
ID (A)
0.1
1 0.1
t
T
0.1 0.02
1ms
0.01 Duty factor = t/T
Fig 9. Maximum Safe Operating Area Fig10. Effective Transient Thermal Impedance
100 2
I D =1mA
PD , Power Dissipation (W)
80 1.6
Normalized BVDSS
60 1.2
40 0.8
20 0.4
0 0
0 50 100 150 -100 -50 0 50 100 150
o
T C , Case Temperature ( o C ) T j , Junction Temperature ( C)
Fig 11. Total Power Dissipation Fig 12. Normalized BVDSS v.s. Junction
Temperature
4
AP50WN1K0H
MARKING INFORMATION
Part Number
50WN1K0
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