MCP40D17/18/19: 7-Bit Single I C™ (With Command Code) Digital POT With Volatile Memory in SC70
MCP40D17/18/19: 7-Bit Single I C™ (With Command Code) Digital POT With Volatile Memory in SC70
MCP40D17/18/19: 7-Bit Single I C™ (With Command Code) Digital POT With Volatile Memory in SC70
• Low Tempco:
MCP40D19
- Absolute (Rheostat): 50 ppm typical SC70-5
(0°C to 70°C)
VDD 1 5 W
- Ratiometric (Potentiometer): 15 ppm typical W
VSS 2
• I2C Protocol B A
SCL 3 4 SDA
- Supports SMBus 2.0 Write Byte/Word
Protocol Formats
- Supports SMBus 2.0 Read Byte/Word
Protocol Formats
Applications
• PC Servers (I2C Protocol with Command Code)
• Standard I2C Device Addresses:
• Amplifier Gain Control and Offset Adjustment
- All devices offered with address “0101110”
- MCP40D18 also offered with address • Sensor Calibration (Pressure, Temperature,
“0111110” Position, Optical and Chemical)
• Brown-out reset protection (1.5V typical) • Set point or offset trimming
• Power-on Default Wiper Setting (Mid-scale) • Cost-sensitive mechanical trim pot replacement
• Low-Power Operation: • RF Amplifier Biasing
- 2.5 µA Static Current (typical) • LCD Brightnes and Contract Adjustment
• Wide Operating Voltage Range:
- 2.7V to 5.5V - Device Characteristics
Specified
- 1.8V to 5.5V - Device Operation
• Wide Bandwidth (-3 dB) Operation:
- 2 MHz (typical) for 5.0 kΩ device
• Extended temperature range (-40°C to +125°C)
• Very small package (SC70)
• Lead free (Pb-free) package
Device Features
# of Steps
Resistance (typical)
Interface
Memory
Control
VDD
Wiper Wiper Operating
Type
Technology
Resistance (typical)
WiperLock
# of Steps
Interface
Interface
Memory
Control
VDD
Wiper Operating
Type
HV
Device Configuration Options (kΩ) Range Package
( 2)
MCP40D17 I2C 128 Rheostat RAM 5.0, 10.0, 50.0, 100.0 1.8V to 5.5V No No SC70-6
MCP4017 ( 2, 4) I2C 128 Rheostat RAM 5.0, 10.0, 50.0, 100.0 1.8V to 5.5V No No SC70-6
( 2)
MCP4012 U/D 64 Rheostat RAM 2.1, 5.0, 10.0, 50.0 1.8V to 5.5V Yes No SOT-23-6
( 2)
MCP4022 U/D 64 Rheostat EE 2.1, 5.0, 10.0, 50.0 2.7V to 5.5V Yes Yes SOT-23-6
MCP4132 ( 3) SPI 129 Rheostat RAM 5.0, 10.0, 50.0, 100.0 1.8V to 5.5V Yes No PDIP-8,
MCP4142 ( 3)
SPI 129 Rheostat EE 5.0, 10.0, 50.0, 100.0 2.7V to 5.5V Yes Yes SOIC-8,
MSOP-8,
MCP4152 ( 3) SPI 257 Rheostat RAM 5.0, 10.0, 50.0, 100.0 1.8V to 5.5V Yes No
DFN-8
MCP4162 ( 3) SPI 257 Rheostat EE 5.0, 10.0, 50.0, 100.0 2.7V to 5.5V Yes Yes
MCP4532 ( 3) I2C 129 Rheostat RAM 5.0, 10.0, 50.0, 100.0 1.8V to 5.5V Yes No MSOP-8,
MCP4542 ( 3) I2C 129 Rheostat EE 5.0, 10.0, 50.0, 100.0 2.7V to 5.5V Yes Yes DFN-8
MCP4552 ( 3) I2C 257 Rheostat RAM 5.0, 10.0, 50.0, 100.0 1.8V to 5.5V Yes No
MCP4562 ( 3) I2C 257 Rheostat EE 5.0, 10.0, 50.0, 100.0 2.7V to 5.5V Yes Yes
MCP40D18 ( 2) I2C 128 Potentiometer RAM 5.0, 10.0, 50.0, 100.0 1.8V to 5.5V No No SC70-6
MCP4018 ( 2, 4) I2C 128 Potentiometer RAM 5.0, 10.0, 50.0, 100.0 1.8V to 5.5V No No SC70-6
MCP4013 ( 2) U/D 64 Potentiometer RAM 2.1, 5.0, 10.0, 50.0 1.8V to 5.5V Yes No SOT-23-6
( 2)
MCP4023 U/D 64 Potentiometer EE 2.1, 5.0, 10.0, 50.0 2.7V to 5.5V Yes Yes SOT-23-6
MCP40D19 ( 2) I2C 128 Rheostat RAM 5.0, 10.0, 50.0, 100.0 1.8V to 5.5V No No SC70-5
MCP4019 ( 2, 4) I2C 128 Rheostat RAM 5.0, 10.0, 50.0, 100.0 1.8V to 5.5V No No SC70-5
( 2)
MCP4014 U/D 64 Rheostat RAM 2.1, 5.0, 10.0, 50.0 1.8V to 5.5V Yes No SOT-23-5
MCP4024 ( 2) U/D 64 Rheostat EE 2.1, 5.0, 10.0, 50.0 2.7V to 5.5V Yes Yes SOT-23-5
Note 1: This table is broken into three groups by a thick line (and color coding). The unshaded devices in this table
are the devices described in this data sheet, while the shaded devices offer a comparable resistor network
configuration.
2: Analog characteristics only tested from 2.7V to 5.5V.
3: Analog characteristics only tested from 3.0V to 5.5V.
4: These devices have a simplified I2C command format, which allows higher data throughput.
SCL
91 93
90 92
SDA
START STOP
Condition Condition
102B ( 5) TRSDA SDA rise time 100 kHz mode — 1000 ns Cb is specified to be from
400 kHz mode 20 + 0.1Cb 300 ns 10 to 400 pF
103A ( 5) TFSCL SCL fall time 100 kHz mode — 300 ns Cb is specified to be from
400 kHz mode 20 + 0.1Cb 40 ns 10 to 400 pF
103B ( 5) TFSDA SDA fall time 100 kHz mode — 300 ns Cb is specified to be from
400 kHz mode 20 + 0.1Cb 300 ns 10 to 400 pF
( 4)
106 THD:DAT Data input hold 100 kHz mode 0 — ns 1.8V-5.5V, Note 6
time 400 kHz mode 0 — ns 2.7V-5.5V, Note 6
107 TSU:DAT Data input 100 kHz mode 250 — ns ( 2)
setup time 400 kHz mode 100 — ns
109 TAA Output valid 100 kHz mode — 3450 ns ( 1)
from clock 400 kHz mode — 900 ns
110 TBUF Bus free time 100 kHz mode 4700 — ns Time the bus must be free
400 kHz mode 1300 — ns before a new transmission
can start
TSP Input filter spike 100 kHz mode — 50 ns Philips Spec states N.A.
suppression 400 kHz mode — 50 ns
(SDA and SCL)
Note 1: As a transmitter, the device must provide this internal minimum delay time to bridge the undefined region
(min. 300 ns) of the falling edge of SCL to avoid unintended generation of START or STOP conditions.
2: A fast-mode (400 kHz) I2C-bus device can be used in a standard-mode (100 kHz) I2C-bus system, but the
requirement tsu; DAT ≥ 250 ns must then be met. This will automatically be the case if the device does not
stretch the LOW period of the SCL signal. If such a device does stretch the LOW period of the SCL signal,
it must output the next data bit to the SDA line
TR max.+tsu;DAT = 1000 + 250 = 1250 ns (according to the standard-mode I2C bus specification) before
the SCL line is released.
3: The MCP40D18/MCP40D19 device must provide a data hold time to bridge the undefined part between
VIH and VIL of the falling edge of the SCL signal. This specification is not a part of the I2C specification, but
must be tested in order to guarantee that the output data will meet the setup and hold specifications for the
receiving device.
4: Use Cb in pF for the calculations.
5: Not Tested.
6: A Master Transmitter must provide a delay to ensure that difference between SDA and SCL fall times do
not unintentionally create a Start or Stop condition.
60 2
FIGURE 2-1: Interface Active Current FIGURE 2-2: Interface Inactive Current
(IDD) vs. SCL Frequency (fSCL) and Temperature (ISHDN) vs. Temperature and VDD.
(VDD = 1.8V, 2.7V and 5.5V). (VDD = 1.8V, 2.7V and 5.5V).
Error (LSb)
Error (LSb)
80 INL 80
(ohms)
(ohms)
0 0
60 60
-0.1 25°C -0.1
25°C RW DNL
RW -40°C
-40°C
40 40
-0.2 -0.2
INL
20 -0.3 20 -0.3
0 32 64 96 0 32 64 96
Wiper Setting (decimal) Wiper Setting (decimal)
FIGURE 2-3: 5.0 kΩ : Pot Mode – RW (Ω), FIGURE 2-6: 5.0 kΩ : Rheo Mode – RW
INL (LSb), DNL (LSb) vs. Wiper Setting and (Ω), INL (LSb), DNL (LSb) vs. Wiper Setting and
Temperature (VDD = 5.5V). (A = VDD, B = VSS). Temperature (VDD = 5.5V).(IW = 1.4 mA, B = VSS)
300 3
300 0.3 -40C Rw 25C Rw 85C Rw 125C Rw
-40C Rw 25C Rw 85C Rw 125C Rw -40C INL 25C INL 85C INL 125C INL
-40C INL 25C INL 85C INL 125C INL -40C DNL 25C DNL 85C DNL 125C DNL
260
0.2 INL
125°C 125°C 2
220 85° INL
220 85°C
Error (LSb)
0.1
Error (LSb)
25°C
(ohms)
(ohms)
180 180
0 1
140 140
-0.1 RW
100 RW 100
0
25°C -0.2
60 -40°C DNL 60 DNL
-40°C
20 -0.3 20 -1
0 32 64 96 0 32 64 96
Wiper Setting (decimal) Wiper Setting (decimal)
FIGURE 2-4: 5.0 kΩ : Pot Mode – RW (Ω), FIGURE 2-7: 5.0 kΩ : Rheo Mode – RW
INL (LSb), DNL (LSb) vs. Wiper Setting and (Ω), INL (LSb), DNL (LSb) vs. Wiper Setting and
Temperature (VDD = 2.7V). (A = VDD, B = VSS) Temperature (VDD = 2.7V).(IW = 450 µA, B = VSS)
0.25
Wiper Resistance (RW)
1500
(ohms)
1500
(ohms)
0.05 24
-0.05 19
1000 1000
14
-0.15 DNL
RW 9
500 500
-0.25
4
0 -0.35 0 -1
0 32 64 96 0 32 64 96
Wiper Setting (decimal) Wiper Setting (decimal)
Note: Refer to AN1080 for additional informa- Note: Refer to AN1080 for additional informa-
tion on the characteristics of the wiper tion on the characteristics of the wiper
resistance (RW) with respect to device resistance (RW) with respect to device
voltage and wiper setting value. voltage and wiper setting value.
FIGURE 2-5: 5.0 kΩ : Pot Mode – RW (Ω), FIGURE 2-8: 5.0 kΩ : Rheo Mode – RW
INL (LSb), DNL (LSb) vs. Wiper Setting and (Ω), INL (LSb), DNL (LSb) vs. Wiper Setting and
Temperature (VDD = 1.8V). (A = VDD, B = VSS) Temperature (VDD = 1.8V). (IW =260 µA, B = VSS)
0.0
Full-Scale Error (FSE) (LSb) 200
-0.2 180
-0.4 160
-0.8 120
-1.0 5.5V 100
80
-1.2
2.7 60
-1.4
40 5.5V
1.8V
-1.6 20
-1.8 0
-40 0 40 80 120 0 32 64 96
Ambient Temperature (°C) Wiper Setting (decimal)
FIGURE 2-9: 5.0 kΩ : Full Scale Error FIGURE 2-12: 5.0 kΩ : RBW Tempco
(FSE) vs. Temperature (VDD = 5.5V, 2.7V, 1.8V). ΔRWB / ΔT vs. Code.
1.8
Zero-Scale Error (ZSE) (LSb)
1.6
1.4
1.2
1.8V
1.0
0.8 2.7
0.6
0.4 5.5V
0.2
0.0
-40 0 40 80 120
Ambient Temperature (°C)
FIGURE 2-10: 5.0 kΩ : Zero Scale Error FIGURE 2-13: 5.0 kΩ : Power-Up Wiper
(ZSE) vs. Temperature (VDD = 5.5V, 2.7V, 1.8V). Response Time.
5200
5180
Nominal Resistance (RAB)
5160
5140
5120 Wiper
(Ohms)
5100
5080
1.8V VDD
2.7V
5060
5040
5020
5.5V
5000
-40 0 40 80 120
Ambient Temperature (°C)
FIGURE 2-11: 5.0 kΩ : Nominal Resistance FIGURE 2-14: 5.0 kΩ : Digital Feedthrough
(Ω) vs. Temperature and VDD. (SCL signal coupling to Wiper pin).
FIGURE 2-15: 5.0 kΩ : Write Wiper FIGURE 2-18: 5.0 kΩ : Write Wiper
(40h → 3Fh) Settling Time (VDD=5.5V). (FFh → 00h) Settling Time (VDD=5.5V).
FIGURE 2-16: 5.0 kΩ : Write Wiper FIGURE 2-19: 5.0 kΩ : Write Wiper
(40h → 3Fh) Settling Time (VDD=2.7V). (FFh → 00h) Settling Time (VDD=2.7V).
FIGURE 2-17: 5.0 kΩ : Write Wiper FIGURE 2-20: 5.0 kΩ : Write Wiper
(40h → 3Fh) Settling Time (VDD=1.8V). (FFh → 00h) Settling Time (VDD=1.8V).
Error (LSb)
Error (LSb)
80 80
(ohms)
(ohms)
0 0
60 60
-0.1 -0.1
-40°C RW
-40°C DNL RW
25°C INL 25°C
40 40
-0.2 INL -0.2
20 -0.3 20 -0.3
0 32 64 96 0 32 64 96
Wiper Setting (decimal) Wiper Setting (decimal)
FIGURE 2-21: 10 kΩ Pot Mode : RW (Ω), FIGURE 2-24: 10 kΩ Rheo Mode : RW (Ω),
INL (LSb), DNL (LSb) vs. Wiper Setting and INL (LSb), DNL (LSb) vs. Wiper Setting and
Temperature (VDD = 5.5V). (A = VDD, B = VSS). Temperature (VDD = 5.5V).(IW = 450 µA, B = VSS).
300 3
300 0.3 -40C Rw 25C Rw 85C Rw 125C Rw
-40C Rw 25C Rw 85C Rw 125C Rw -40C INL 25C INL 85C INL 125C INL
-40C INL 25C INL 85C INL 125C INL -40C DNL 25C DNL 85C DNL 125C DNL
260
0.2
INL 125°C 85°C 125°C RW 2
220 85° 220
Error (LSb)
0.1
Error (LSb)
25°C
(ohms)
(ohms)
180 180
0 1
140 140
-0.1
100 DNL 100
RW 0
25°C
60 -0.2 60 INL
-40°C -40°C DNL
20 -0.3 20 -1
0 32 64 96 0 32 64 96
Wiper Setting (decimal) Wiper Setting (decimal)
FIGURE 2-22: 10 kΩ Pot Mode : RW (Ω), FIGURE 2-25: 10 kΩ Rheo Mode : RW (Ω),
INL (LSb), DNL (LSb) vs. Wiper Setting and INL (LSb), DNL (LSb) vs. Wiper Setting and
Temperature (VDD = 2.7V). (A = VDD, B = VSS). Temperature (VDD = 2.7V).(IW = 210 µA, B = VSS).
3000 0.25
Wiper Resistance (RW)
Error (LSb)
Error (LSb)
24
(ohms)
(ohms)
Note: Refer to AN1080 for additional informa- Note: Refer to AN1080 for additional informa-
tion on the characteristics of the wiper tion on the characteristics of the wiper
resistance (RW) with respect to device resistance (RW) with respect to device
voltage and wiper setting value. voltage and wiper setting value.
FIGURE 2-23: 10 kΩ Pot Mode : RW (Ω), FIGURE 2-26: 10 kΩ Rheo Mode : RW (Ω),
INL (LSb), DNL (LSb) vs. Wiper Setting and INL (LSb), DNL (LSb) vs. Wiper Setting and
Temperature (VDD = 1.8V). (A = VDD, B = VSS). Temperature (VDD = 1.8V). (IW =260 µA, B = VSS).
0.0 100
Full-Scale Error (FSE) (LSb)
-0.1
-0.2 80 2.7V
0.9
Zero-Scale Error (ZSE) (LSb)
0.8
0.7
0.6 1.8V
0.5
2.7
0.4
0.3
0.2 5.5V
0.1
0.0
-40 0 40 80 120
Ambient Temperature (°C)
10200
Nominal Resistance (RAB)
10150
10100
Wiper
(Ohms)
1.8V
10050
VDD
10000
2.7
9950
5.5V
9900
-40 0 40 80 120
Ambient Temperature (°C)
Error (LSb)
Error (LSb)
80 80
(ohms)
(ohms)
0 0
60 60 INL
DNL -0.1 DNL -0.1
INL RW -40°C
-40°C RW
40 25°C 40 25°C
-0.2 -0.2
20 -0.3 20 -0.3
0 32 64 96 0 32 64 96
Wiper Setting (decimal) Wiper Setting (decimal)
FIGURE 2-39: 50 kΩ Pot Mode : RW (Ω), FIGURE 2-42: 50 kΩ Rheo Mode : RW (Ω),
INL (LSb), DNL (LSb) vs. Wiper Setting and INL (LSb), DNL (LSb) vs. Wiper Setting and
Temperature (VDD = 5.5V). Temperature (VDD = 5.5V).(IW = 90 µA, B = VSS)
300 0.3
300 0.3 -40C Rw 25C Rw 85C Rw 125C Rw
-40C Rw 25C Rw 85C Rw 125C Rw -40C INL 25C INL 85C INL 125C INL
-40C INL 25C INL 85C INL 125C INL -40C DNL 25C DNL 85C DNL 125C DNL
260 0.2
0.2 125°C
85° 125°C 85°C INL
220 220
0.1
Error (LSb)
0.1
Error (LSb)
25°C
(ohms)
(ohms)
180 180
0 0
140 140
INL -0.1 -0.1
100 100 DNL RW
DNL RW
25°C -0.2 -0.2
60 60 -40°C
-40°C
20 -0.3 20 -0.3
0 32 64 96 0 32 64 96
Wiper Setting (decimal) Wiper Setting (decimal)
FIGURE 2-40: 50 kΩ Pot Mode : RW (Ω), FIGURE 2-43: 50 kΩ Rheo Mode : RW (Ω),
INL (LSb), DNL (LSb) vs. Wiper Setting and INL (LSb), DNL (LSb) vs. Wiper Setting and
Temperature (VDD = 2.7V). Temperature (VDD = 2.7V).(IW = 45 µA, B = VSS).
0.25
Wiper Resistance (RW)
6000 INL
(ohms)
6000 13
(ohms)
0.05
11
4000 -0.05 4000 9
INL 7
-0.15 DNL 5
2000 2000
RW -0.25 3
1
0 -0.35 0 -1
0 32 64 96 0 32 64 96
Wiper Setting (decimal) Wiper Setting (decimal)
Note: Refer to AN1080 for additional informa- Note: Refer to AN1080 for additional informa-
tion on the characteristics of the wiper tion on the characteristics of the wiper
resistance (RW) with respect to device resistance (RW) with respect to device
voltage and wiper setting value. voltage and wiper setting value.
FIGURE 2-41: 50 kΩ Pot Mode : RW (Ω), FIGURE 2-44: 50 kΩ Rheo Mode : RW (Ω),
INL (LSb), DNL (LSb) vs. Wiper Setting and INL (LSb), DNL (LSb) vs. Wiper Setting and
Temperature (VDD = 1.8V). Temperature (VDD = 1.8V). (IW =260 µA, B = VSS).
0.00
Full-Scale Error (FSE) (LSb) 100
80
60
-0.08 2.7V
2.7 5.5V 40
-0.12 5.5V
20
1.8V
-0.16 0
-40 0 40 80 120 0 32 64 96
Ambient Temperature (°C) Wiper Setting (decimal)
0.20
Zero-Scale Error (ZSE) (LSb)
0.16
1.8V
0.12
2.7
0.08
0.04
5.5V
0.00
-40 0 40 80 120
Ambient Temperature (°C)
49800
Nominal Resistance (RAB)
49600
49400 Wiper
(Ohms)
VDD
49200 1.8V
49000 2.7V
5.5V
48800
-40 0 40 80 120
Ambient Temperature (°C)
Error (LSb)
Error (LSb)
80 80
(ohms)
(ohms)
0 0
60 60
INL -0.1 -0.1
RW -40°C RW
40 -40°C 25°C 40 25°C INL
-0.2 -0.2
20 -0.3 20 -0.3
0 32 64 96 0 32 64 96
Wiper Setting (decimal) Wiper Setting (decimal)
FIGURE 2-57: 100 kΩ Pot Mode : RW (Ω), FIGURE 2-60: 100 kΩ Rheo Mode : RW
INL (LSb), DNL (LSb) vs. Wiper Setting and (Ω), INL (LSb), DNL (LSb) vs. Wiper Setting and
Temperature (VDD = 5.5V). Temperature (VDD = 5.5V). (IW = 45 µA, B = VSS).
300 0.3
300 0.3 -40C Rw 25C Rw 85C Rw 125C Rw
-40C Rw 25C Rw 85C Rw 125C Rw -40C INL 25C INL 85C INL 125C INL
-40C INL 25C INL 85C INL 125C INL -40C DNL 25C DNL 85C DNL 125C DNL
260 0.2
0.2 125°C
85°C
DNL 85° 125°C 220 INL
220 0.1
Error (LSb)
0.1
Error (LSb)
(ohms)
(ohms)
180 180
0 0
140 140
-0.1 DNL -0.1
100 100 RW
RW
INL
60 25°C -0.2 60 25°C -0.2
-40°C -40°C
20 -0.3 20 -0.3
0 32 64 96 0 32 64 96
Wiper Setting (decimal) Wiper Setting (decimal)
FIGURE 2-58: 100 kΩ Pot Mode : RW (Ω), FIGURE 2-61: 100 kΩ Rheo Mode : RW
INL (LSb), DNL (LSb) vs. Wiper Setting and (Ω), INL (LSb), DNL (LSb) vs. Wiper Setting and
Temperature (VDD = 2.7V). Temperature (VDD = 2.7V). (IW = 21 µA, B = VSS).
0.25
Wiper Resistance (RW)
INL
(ohms)
(ohms)
0.05 11
7500 7500 9
-0.05
7
5000 5000
-0.15 5
DNL 3
2500 INL -0.25 2500
RW 1
0 -0.35 0 -1
0 32 64 96 0 32 64 96
Wiper Setting (decimal) Wiper Setting (decimal)
Note: Refer to AN1080 for additional informa- Note: Refer to AN1080 for additional informa-
tion on the characteristics of the wiper tion on the characteristics of the wiper
resistance (RW) with respect to device resistance (RW) with respect to device
voltage and wiper setting value. voltage and wiper setting value.
FIGURE 2-59: 100 kΩ Pot Mode : RW (Ω), FIGURE 2-62: 100 kΩ Rheo Mode : RW (Ω),
INL (LSb), DNL (LSb) vs. Wiper Setting and INL (LSb), DNL (LSb) vs. Wiper Setting and
Temperature (VDD = 1.8V). Temperature (VDD = 1.8V). (IW =260 µA, B = VSS).
0.00
100
Full-Scale Error (FSE) (LSb)
80
60
5.5V
-0.04
40 2.7V
2.7
-0.06
20
1.8V 5.5V
-0.08 0
-40 0 40 80 120 0 32 64 96
Ambient Temperature (°C) Wiper Setting (decimal)
FIGURE 2-63: 100 kΩ : Full Scale Error FIGURE 2-66: 100 kΩ : RBW Tempco
(FSE) vs. Temperature (VDD = 5.5V, 2.7V, 1.8V). ΔRWB / ΔT vs. Code.
0.12
Zero-Scale Error (ZSE) (LSb)
0.08
1.8V
2.7
0.04
5.5V
0.00
-40 0 40 80 120
Ambient Temperature (°C)
FIGURE 2-64: 100 kΩ : Zero Scale Error FIGURE 2-67: 100 kΩ : Power-Up Wiper
(ZSE) vs. Temperature (VDD = 5.5V, 2.7V, 1.8V). Response Time.
99800
99600
Nominal Resistance (RAB)
99400
99200
99000 Wiper
(Ohms)
1.8V
98800
VDD
98600 2.7V
98400
98200
98000 5.5V
97800
-40 0 40 80 120
Ambient Temperature (°C)
FIGURE 2-69: 100 kΩ : Write Wiper FIGURE 2-72: 100 kΩ : Write Wiper
(40h → 3Fh) Settling Time (VDD = 5.5V). (FFh → 00h) Settling Time (VDD = 5.5V).
FIGURE 2-70: 100 kΩ : Write Wiper FIGURE 2-73: 100 kΩ : Write Wiper
(40h → 3Fh) Settling Time (VDD = 2.7V). (FFh → 00h) Settling Time (VDD = 2.7V).
FIGURE 2-71: 100 kΩ : Write Wiper FIGURE 2-74: 100 kΩ : Write Wiper
(40h → 3Fh) Settling Time (VDD = 1.8V). (FFh → 00h) Settling Time (VDD = 1.8V).
4 0.3
3.5
5.5V 0.25
3 2.7V (@ 3mA)
0.2
2.5
VOL (mV)
VIH (V)
2.7V
2 0.15
5.5V (@ 3mA)
1.5
0.1
1 1.8V (@ 1mA)
0.05
0.5
1.8V
0 0
-40 0 40 80 120 -40 0 40 80 120
Temperature (°C) Temperature (°C)
FIGURE 2-75: VIH (SCL, SDA) vs. VDD and FIGURE 2-77: VOL (SDA) vs. VDD and
Temperature. Temperature.
2 1.2
1 5.5
5.5V V
1.5
2.7V 0.8
VDD (V)
VIL (V)
1 0.6 2.7V
0.4
0.5 1.8V
0.2
0 0
-40 0 40 80 120 -40 0 40 80 120
Temperature (°C) Temperature (°C)
FIGURE 2-76: VIL (SCL, SDA) vs. VDD and FIGURE 2-78: POR/BOR Trip point vs. VDD
Temperature. and Temperature.
10 10
Code = 7Fh Code = 7Fh
0 0
Code = 3Fh Code = 3Fh
-10
-10 Code = 1Fh
-20
dB
dB
-20 Code = 0Fh
Code = 0Fh Code = 1Fh -30
-30 Code = 01h
Code = 01h -40
-40 -50
-50 -60
100 1,000 10,000 100 1,000 10,000
Frequency (kHz) Frequency (kHz)
FIGURE 2-79: 5 kΩ – Gain vs. Frequency FIGURE 2-82: 100 kΩ – Gain vs.
(-3 dB). Frequency (-3 dB).
10
2.1 Test Circuits
Code = 7Fh
0
Code = 3Fh
-10 +5V
+5V
-20
dB
Code = 0Fh
-30 Code = 1Fh
VIN A
Code = 01h W + VOUT
-40
-50 B -
-60
100 1,000 10,000
Frequency (kHz)
Code = 0Fh
-30
Code = 01h
-40
-50
-60
100 1,000 10,000
Frequency (kHz)
As the Device Block Diagram shows, there are four As the voltage recovers above the VPOR/VBOR voltage
main functional blocks. These are: see Section 4.1.1 “Power-on Reset”.
2.7V
1.8V
VPOR/BOR
VRAM
VSS
Analog Analog
Characteristics Characteristics not specified
not specified Device’s Serial
Interface is VBOR Delay
“Not Operational” Wiper Forced to Default POR/BOR setting
SDA D0 A
SDA 1st Bit
SCL 8 9
Sr = Repeated Start
FIGURE 5-5: Repeat Start Condition
Waveform.
SDA
SCL
S 1st 2nd 3rd 4th 5th 6th 7th 8th A/A 1st 2nd 3rd 4th 5th 6th 7th 8th A/A P
Bit Bit Bit Bit Bit Bit Bit Bit Bit Bit Bit Bit Bit Bit Bit Bit
SDA
SCL
Second Byte
S 0 0 0 0 0 0 0 0 A X X X X X X X 0 A P
S 0 0 0 0 0 0 0 0 A X X X X X X X 1 A X X X X X X X X A P
General Call Address “7-bit Command” This indicates a “Hardware General Call”
MCP40D17/18/19 will ignore this byte and
all following bytes (and A), until a Stop bit
(P) is encountered.
Fixed
Read/Write bit (“0” = Write) STOP bit
Address
S 0 1 0 1 1 1 0 0 A 0 0 0 0 0 0 0 0 A X D6 D5 D4 D3 D2 D1 D0 A P
Legend
S = Start Condition
P = Stop Condition
A = Acknowledge
X = Don’t Care
R/W = Read/Write bit
D6:D0 = Data bits
FIGURE 5-12: I2C Single Byte Write Command Format (Slave Address = “0101110”).
Fixed
Read/Write bit (“0” = Write)
Address
S 0 1 0 1 1 1 1 0 A 0 0 0 0 0 0 0 0 A X D6 D5 D4 D3 D2 D1 D0 A
STOP bit
X D6 D5 D4 D3 D2 D1 D0 A X D6 D5 D4 D3 D2 D1 D0 A P
MCP40D17/18/19 0 0 0
I2C Bus S 0 1 0 1 1 1 0 0 0 0 0 0 0 0 0 0 0 0 0 d d d d d d d 0 P
Write 2 Byte with Command Code = 00h
R A A A
/ C C C
S Slave Address W K Command Code K Data Byte K
Master S 0 1 0 1 1 1 0 0 1 0 0 0 0 0 0 0 0 1 0 d d d d d d d 1
MCP40D17/18/19 0 0 0
I2C Bus S 0 1 0 1 1 1 0 0 0 0 0 0 0 0 0 0 0 0 0 d d d d d d d 0
A
C
Data Byte K P
Master 0 d d d d d d d 1 P
MCP40D17/18/19 0
I2C Bus 0 d d d d d d d 0 P
S 0 1 0 1 1 1 0 0 A 0 0 0 0 0 0 0 0 A Legend
S = Start Condition
Slave Address Byte Command Code P = Stop Condition
STOP bit
Read/Write bit (“1” = Read) A = Acknowledge
X = Don’t Care
S 0 1 0 1 1 1 0 1 A 0 D6 D5 D4 D3 D2 D1 D0 A(2) P R/W = Read/Write bit
D6:D0 = Data bits
Slave Address Byte Data Byte
Note 1: Master Device is responsible for ACK / NACK signal. If a NACK signal occurs, the MCP40D17/18/19 will
abort this transfer and release the bus.
2: The Master Device will Not ACK, and the MCP40D17/18/19 will release the bus so the Master Device can
generate a Stop or Repeated Start condition.
MCP40D17/18/19 0 0 0
I2C Bus S 0 1 0 1 1 1 0 0 0 0 0 0 0 0 0 0 0 0 S 0 1 0 1 1 1 0 1 0
A
C
Data Byte K P
Master 1 P
MCP40D17/18/19 0 d d d d d d d 1
I2C Bus 0 d d d d d d d 1 P
Read 2 Byte with Command Code = 00h
R A A R A
/ C C R / C
S Slave Address W K Command Code K S Slave Address WK
Master S 0 1 0 1 1 1 0 0 1 0 0 0 0 0 0 0 0 1 S 0 1 0 1 1 1 0 1 1
MCP40D17/18/19 0 0 0
I2C Bus S 0 1 0 1 1 1 0 0 0 0 0 0 0 0 0 0 0 0 S 0 1 0 1 1 1 0 1 0
A A
C C
Data Byte K Data Byte K P
Master 0 1 P
MCP40D17/18/19 0 d d d d d d d 1 0 d d d d d d d 1
I2C Bus 0 d d d d d d d 0 0 d d d d d d d 1 P
W V3
A
B
W RAW or RBW
V2
B
FIGURE 6-3: Potentiometer
Configuration.
Resistor
The temperature coefficient of the RAB resistors is
FIGURE 6-2: Rheostat Configuration. minimal by design. In this configuration, the resistors all
change uniformly, so minimal variation should be seen.
This allows the control of the total resistance between
the two nodes. The total resistance depends on the The Wiper resistor temperature coefficient is different
“starting” terminal to the Wiper terminal. So at the code to the RAB temperature coefficient. The voltage at node
00h, the RBW resistance is minimal (RW), but the RAW V3 (Figure 6-3) is not dependent on this Wiper
resistance in maximized (RAB + RW). Conversely, at the resistance, just the ratio of the RAB resistors, so this
code 3Fh, the RAW resistance is minimal (RW), but the temperature coefficient in most cases can be ignored.
RBW resistance in maximized (RAB + RW).
The resistance Step size (RS) equates to one LSb of Note: To avoid damage to the internal wiper
the resistor. circuitry in this configuration, care should
be taken to insure the current flow never
exceeds 2.5 mA.
Note: To avoid damage to the internal wiper
circuitry in this configuration, care should
be taken to insure the current flow never
exceeds 2.5 mA.
6.4.1 ACCURACY
RS63
0x3F
RS62
0x3E
Digital Input Code
0x3D
RS3
0x03
RS1
0x02
RS0
0x01
0x00
RW n=?
(@ tap)
RBW = RSn + RW(@ Tap n)
n=0
Resistance (RBW)
The typical application will require a bypass capacitor 7.2.1 RESISTOR TEMPCO
in order to filter high-frequency noise, which can be Characterization curves of the resistor temperature
induced onto the power supply's traces. The bypass coefficient (Tempco) are shown in Figure 2-11,
capacitor helps to minimize the effect of these noise Figure 2-29, Figure 2-47, and Figure 2-65.
sources on signal integrity. Figure 7-1 illustrates an
appropriate bypass strategy. These curves show that the resistor network is
designed to correct for the change in resistance as
In this example, the recommended bypass capacitor temperature increases. This technique reduces the
value is 0.1 µF. This capacitor should be placed as end to end change is RAB resistance.
close to the device power pin (VDD) as possible (within
4 mm).
The power source supplying these devices should be
as clean as possible. If the application circuit has
separate digital and analog power supplies, VDD and
VSS should reside on the analog plane.
VDD
0.1 µF
VDD
0.1 µF
PICmicro® Microcontroller
MCP40D17/18/19
A
SCL
W
B SDA
VSS VSS
R WB
V TRIP = V DD ⎛⎝ -------------------⎞⎠
R1 + R2
RAB = RNominal
RWB = RAB • D
127
VTRIP
D= • (R1 + RAB ) • 127
VDD
Op Amp
R1
MCP6291 VOUT
VIN + VIN +
MCP6021
VDD Op Amp A
W
VOUT 1
‚ B fc = -----------------------------
2 π ⋅ R Eq ⋅ C
R1 MCP40D18
A R3
W
B
MCP40D17
Thevenin R = ( R 1 + R AB – R WB ) || ( R 2 + R WB ) + R w
MCP40D18 Equivalent Eq
VDD
R1
NTC
Thermistor
VOUT
R2
MCP40D17
VDD
5 kΩ
MCP40D17
VOUT
MCP40D17 MCP40D17
50 kΩ 50 kΩ
Note: In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
.
#
#$ #/! - 0 #
1/%#
#!#
##+22---
2/
3 2 1
E1
4 5
e e
A A2 c
A1
L
- *9)
.
#
#$ #/! - 0 #
1/%#
#!#
##+22---
2/
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
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intended manner and under normal conditions.
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03/26/09