Opa164X Soundplus™ High-Performance, Jfet-Input Audio Operational Amplifiers
Opa164X Soundplus™ High-Performance, Jfet-Input Audio Operational Amplifiers
Opa164X Soundplus™ High-Performance, Jfet-Input Audio Operational Amplifiers
space
7
Traditional JFET-Input Amplifier
6.5
6 OPA164x Family
IN- IN+ 5
4.5
V-
4
±10 ±8 ±6 ±4 ±2 0 2 4 6 8 10
Common-Mode Voltage (V) C004
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
OPA1641, OPA1642, OPA1644
SBOS484D – DECEMBER 2009 – REVISED APRIL 2016 www.ti.com
Table of Contents
1 Features .................................................................. 1 8 Application and Implementation ........................ 18
2 Applications ........................................................... 1 8.1 Application Information............................................ 18
3 Description ............................................................. 1 8.2 Typical Application ................................................. 25
4 Revision History..................................................... 2 9 Power Supply Recommendations...................... 27
5 Pin Configuration and Functions ......................... 4 10 Layout................................................................... 28
6 Specifications......................................................... 6 10.1 Layout Guidelines ................................................. 28
6.1 Absolute Maximum Ratings ..................................... 6 10.2 Layout Example .................................................... 29
6.2 ESD Ratings ............................................................ 6 11 Device and Documentation Support ................. 30
6.3 Recommended Operating Conditions....................... 6 11.1 Device Support .................................................... 30
6.4 Thermal Information .................................................. 6 11.2 Documentation Support ....................................... 30
6.5 Electrical Characteristics........................................... 7 11.3 Related Links ........................................................ 31
6.6 Typical Characteristics .............................................. 9 11.4 Community Resources.......................................... 31
7 Detailed Description ............................................ 14 11.5 Trademarks ........................................................... 31
7.1 Overview ................................................................. 14 11.6 Electrostatic Discharge Caution ............................ 31
7.2 Functional Block Diagram ....................................... 14 11.7 Glossary ................................................................ 31
7.3 Feature Description................................................. 15 12 Mechanical, Packaging, and Orderable
7.4 Device Functional Modes........................................ 17 Information ........................................................... 31
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
• Added Pin Configuration and Functions section, ESD Ratings table, Feature Description section, Device Functional
Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device
and Documentation Support section, and Mechanical, Packaging, and Orderable Information section .............................. 1
• Added text to last bullet of Layout Guidelines section.......................................................................................................... 28
(1) (1)
NC 1 8 NC
-In 2 7 V+
+In 3 6 Out
(1)
V- 4 5 NC
OUT A 1 8 V+
-In A 2 A 7 Out B
+In A 3 B 6 -In B
V- 4 5 +In B
Out A 1 14 Out D
-In A 2 13 -In D
A D
+In A 3 12 +In D
V+ 4 11 V-
+ In B 5 10 + In C
B C
-In B 6 9 -In C
Out B 7 8 Out C
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)
MIN MAX UNIT
VS Supply voltage 40 V
(2)
VIN Input voltage (V–) – 0.5 (V+) + 0.5 V
IIN Input current (2) ±10 mA
VIN(DIFF) Differential input voltage ±VS V
(3)
IO Output short-circuit Continuous
TA Operating temperature –55 125 °C
TJ Junction temperature –65 150 °C
Tstg Storage temperature –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Input pins are diode-clamped to the power-supply rails. Input signals that can swing more than 0.5 V beyond the supply rails must be
current-limited to 10 mA or less. The input voltage and output negative-voltage ratings can be exceeded if the input and output current
ratings are followed.
(3) Short-circuit to VS / 2 (ground in symmetrical dual-supply setups), one amplifier per package.
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
100
Voltage Noise Density (nV/ÖHz)
100nV/div
10
1
0.1 1 10 100 1k 10k 100k
Frequency (Hz) Time (1s/div)
Figure 1. Input Voltage Noise Density vs Frequency Figure 2. 0.1-Hz to 10-Hz Noise
35 160
Maximum output
Common-Mode Rejection Ratio (dB)
Power-Supply Rejection Ratio (dB)
VS = ±15V voltage range 140
30
without slew-rate CMRR
120
Output Voltage (VPP)
25 induced distortion
100
20 -PSRR
80
15 +PSRR
60
VS = ±5V
10
40
5 VS = ±2.25V
20
0 0
10k 100k 1M 10M 1 10 100 1k 10k 100k 1M 10M 100M
Frequency (Hz) Frequency (Hz)
Figure 3. Maximum Output Voltage vs Frequency Figure 4. CMRR and PSRR vs Frequency
(Referred to Input)
140 180 30
120
Gain 20
100 135 G = +10
Phase (degrees)
80
Gain (dB)
10
Gain (dB)
60 90 G = +1
40 0
Phase
20 45
-10
0 G = -1
-20 0 -20
50 100 1k 10k 100k 1M 10M 100M 100k 1M 10M 100M
Frequency (Hz) Frequency (Hz)
G = -1
G = -1
BW = 80kHz BW > 500kHz RL = 600W
RL = 2kW
G = +1
RL = 600W 0.001 -100
G = -1
G = -1
RL = 2kW
0.0001 RL = 600W -120 G = +1
RL = 600W
G = +1
0.0001 -120
RL = 2kW
G = +1
RL = 2kW
0.00001 -140 0.00001 -140
10 100 1k 10k 20k 10 100 1k 10k 100k
Frequency (Hz) Frequency (Hz)
1kHz Signal
Output
-100
RL = 600W
5V/div
-110
+18V
-120 RL = 2kW
OPA1641
-130 Output
-18V
RL = 5kW 37VPP
Sine Wave
-140 (±18.5V)
10 100 1k 10k 100k
Frequency (Hz) Time (0.4ms/div)
20mV/div
20mV/div
+15V
RI = 2kW RF = 2kW
OPA1641 +15V
OPA1641
-15V RL CL
CL
-15V
Figure 13. Small-Signal Step Response (100 mV) Figure 14. Small-Signal Step Response (100 mV)
G = +1 G = -1
CL = 100pF CL = 100pF
2V/div
2V/div
Figure 15. Large-Signal Step Response Figure 16. Large-Signal Step Response
VIN
5V/div
5V/div
20kW
20kW
2kW
VIN 2kW
VOUT
Figure 17. Positive Overload Recovery Figure 18. Negative Overload Recovery
Overshoot (%)
25
25
20 ROUT = 24W
20
15 ROUT = 51W
ROUT = 51W 15
10 10
5 5
G = -1
0 0
0 100 200 300 400 500 600 700 800 900 1000 0 100 200 300 400 500 600 700 800 900 1000
Capacitive Load (pF) Capacitive Load (pF)
Figure 19. Small-Signal Overshoot vs Capacitive Load Figure 20. Small-Signal Overshoot vs Capacitive Load
(100-mV Output Step) (100-mV Output Step)
0 80
70
-0.2
10kW 60
+IB
50
-0.4
IB and IOS (pA)
AOL (mV/V)
40
-0.6 30
2kW
20
-0.8 -IB
10
0
-1.0
-10
-IOS
-1.2 -20
-40 -15 10 35 60 85 -40 -15 10 35 60 85
Temperature (°C) Temperature (°C)
Figure 21. Open-Loop Gain vs Temperature Figure 22. IB and IOS vs Temperature
10 2.5
VS = ±18V
8
6 2.0
+IB
4 -IB
IB and IOS (pA)
2 1.5
IQ (mA)
0
IOS
-2 1.0
-4
-6 0.5
-8
Common-Mode Range
-10 0
-18 -12 -6 0 6 12 18 -40 -25 -10 5 20 35 50 65 80 95 110 125
Common-Mode Voltage (V) Temperature (°C)
Figure 23. IB and IOS vs Common-Mode Voltage Figure 24. Quiescent Current vs Temperature
1.75
50
1.50 ISC-SOURCE
40
1.25
ISC (mA)
IQ (mA)
1.00 30
ISC-SINK
0.75
20
0.50
10 VOUT = Midsupply
0.25 Specified Supply-Voltage Range
(includes self-heating)
0 0
0 4 8 12 16 20 24 28 32 36 -50 -25 0 25 50 75 100 125
Supply Voltage (V) Temperature (°C)
Figure 25. Quiescent Current vs Supply Voltage Figure 26. Short-Circuit Current vs Temperature
18.0 1k
17.5
17.0
16.5
Output Voltage (V)
100
16.0
ZO (W)
+85°C
-40°C +25°C +125°C
-16.0
10
-16.5
-17.0
-17.5
-18.0 1
0 10 20 30 40 50 10 100 1k 10k 100k 1M 10M 100M
Output Current (mA) Frequency (Hz)
Figure 27. Output Voltage vs Output Current Figure 28. Open-Loop Output Impedance vs Frequency
7 Detailed Description
7.1 Overview
The OPA164x family of operational amplifiers combine an ultra low noise JFET input stage with a rail-to-rail
output stage to provide high overall performance in audio applications. The internal topology is selected
specifically to deliver extremely low distortion, consume limited power, and accommodate small packages. These
amplifiers are well-suited for analog signal processing applications such as active filter circuits, pre-amplifiers,
and tone controls. The unique input stage design and semiconductor processes used in this device deliver
extremely high performance even in applications with high source impedance and wide common-mode voltage
swings.
V+
IN- IN+
V-
5V/div Output
+18V
OPA1641
Output
-18V
37VPP
Sine Wave
(±18.5V)
Time (0.4ms/div)
Figure 29. Output Waveform Devoid of Phase Reversal During an Input Overdrive Condition
120
100
EMIRR (dB) 80
60
40
20
0
10M 100M 1G 10G
Frequency (Hz) C003
Table 1 lists the EMIRR IN+ values for the OPA164x at particular frequencies commonly encountered in real-
world applications. Applications listed in Table 1 can be centered on or operated near the particular frequency
shown. This information can be of special interest to designers working with these types of applications, or
working in other fields likely to encounter RF interference from broad sources, such as the industrial, scientific,
and medical (ISM) radio band.
+VS
±
50 Low-Pass Filter
+
RF source
-VS
DC Bias: 0 V Sample /
Modulation: None (CW) Averaging Digital Multimeter
Frequency Sweep: 201 pt. Log Not shown: 0.1 µF and 10 µF
supply decoupling
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
V+
IN- IN+
V-
10k
100
OPA1641
Resistor Noise
10
2 2 2
EO = en + (in RS) + 4kTRS
1
100 1k 10k 100k 1M
Source Resistance, RS (W)
Figure 33. Noise Performance of the OPA1611 and OPA1641 in a Unity-Gain Buffer Configuration
2
R2 2
R2 2 2
R2
R1 EO = 1+ e +
n e1 + e2 + 1 + es2
R1 R1 R1
EO
RS
Where eS = 4kTRS = thermal noise of RS
R2 2 2 2
2 R2 2 R2 2 2 R2
EO = 1+ en + e + e2 +
1 e s2
R1 R1 + RS R 1 + RS R 1 + RS
EO
RS
SIGNAL DISTORTION
GAIN GAIN R1 R2 R3
1 101 ¥ 1kW 10W
R3 OPA1641 VO = 3VRMS
R2 11 101 100W 1kW 11W
Signal Gain = 1+
R1
R2
Distortion Gain = 1+
R1 II R3
Generator Analyzer
Output Input
Audio Precision
System Two(1) Load
with PC Controller
7.5
6 OPA164x Family
5.5
4.5
4
±10 ±8 ±6 ±4 ±2 0 2 4 6 8 10
Common-Mode Voltage (V) C004
Figure 36. Input Capacitance of the OPA164x Family of Amplifiers Compared to Traditional JFET-input
Amplifiers
By stabilizing the input capacitance, the distortion performance of the amplifier is greatly improved for
noninverting configurations with high source impedances. The measured performance of an OPA164x amplifier
is compared to a traditional JFET-input amplifier in Figure 37. The unity-gain configuration, high source
impedance, and large-signal amplitude produce additional distortion in the traditional amplifier.
1 -40
10 k
+
±
-50
5 VRMS
0.1 -60
-70
Traditional JFET-Input Amplifier
0.01 -80
-90
OPA164x Amplifier
0.001 -100
-110
0.0001 -120
10 100 1000 10000
Frequency (Hz) C005
Figure 37. Measured THD+N of the OPA164x Family of Amplifiers Compared to Traditional JFET-input
Amplifiers
Internal power dissipation increases when operating at high supply voltages. Copper leadframe construction
used in the OPA1641, OPA1642, and OPA1644 series of devices improves heat dissipation compared to
conventional materials. PCB layout can also help reduce a possible increase in junction temperature. Wide
copper traces help dissipate the heat by functioning as an additional heatsink. Temperature rise can be further
minimized by soldering the devices directly to the PCB rather than using a socket.
Although the output current is limited by internal protection circuitry, accidental shorting one or more output
channels of a device can result in excessive heating. For instance, when an output is shorted to mid-supply, the
typical short-circuit current of 36 mA leads to an internal power dissipation of over 600 mW at a supply of ±18 V.
In case of a dual OPA1642 in an VSSOP-8 package (thermal resistance θJA = 180°C/W), such a power
dissipation results in the die temperature to be 220°C above ambient temperature, when both channels are
shorted. This temperature increase will destroy the device.
To prevent such excessive heating that can destroy the device, the OPA164x series has an internal thermal
shutdown circuit that shuts down the device if the die temperature exceeds approximately 180°C. When this
thermal shutdown circuit activates, a built-in hysteresis of 15°C ensures that the die temperature must drop to
approximately 165°C before the device switches on again.
Another common question involves what happens to the amplifier if an input signal is applied to the input when
the power supplies +VS and –VS are at 0 V. The amplifier behavior depends on the supply characteristic when at
0 V, or at a level below the input signal amplitude. If the supplies appear as high impedance, then the operational
amplifier supply current can be supplied by the input source through the current steering diodes. This state is not
a normal bias condition; the amplifier most likely will not operate normally. If the supplies are low impedance,
then the current through the steering diodes can become quite high. The current level depends on the ability of
the input source to deliver current, and any resistance in the input path.
If there is an uncertainty about the ability of the supply to absorb this current, external Zener diodes can be
added to the supply pins, as shown in Figure 38. The Zener voltage must be selected such that the diode does
not turn on during normal operation. However, the Zener voltage must be low enough so that the Zener diode
conducts if the supply pin begins to rise above the safe operating supply voltage level.
(2)
TVS
RF
+VS
+V
OPA1641
RI
-In ESD Current-
Steering Diodes
(3) Op-Amp Out
RS
+In Core
Edge-Triggered ESD
Absorption Circuit RL
ID
(1)
VIN -V
-VS
(2)
TVS
Figure 38. Equivalent Internal ESD Circuitry and the Relation to a Typical Circuit Application
RC 1.5k LC 600mH C5
R5
OPA1642 100uF
++ 100 Output
R1 C1 -
VC 47k 150pF
R6
-15 V 100k
R2 R3
Moving-Magnet Phono Cartridge
118k 10k
C2 C3
27nF 7.5nF
R4
127
C4
100uF
Figure 39. Preamplifier Circuit for Vinyl Record Playback With Moving-Magnet Phono Cartridges
(Single Channel Shown)
20
15
Playback Curve
10
5
Gain (dB)
Combined Response
-5
-10
Recording Curve
-15
-20
10 100 1000 10000
Frequency (Hz)
C009
The basic RIAA playback curve implements three time constants: 75 μs, 380 μs, and 3180 μs. An IEC
amendment is later added to the playback curve and implements a pole in the curve at 20 Hz with the intent of
protecting loudspeakers from excessive low frequency content. Rather than strictly adhering to the IEC
amendment, this design moves this pole to a lower frequency to improve low frequency response and still
providing protection for loudspeakers.
Resistor R1 and capacitor C1 are selected to provide the proper input impedance for the moving magnet
cartridge. Cartridge loading is specified by the manufacturer in the cartridge datasheet and is absolutely crucial
for proper response at high frequency. 47 kΩ is a common value for the input resistor, and the capacitive loading
is usually specified to 200 pF to 300 pF per channel. This capacitive loading specification includes the
capacitance of the cable connecting the turntable to the preamplifier, as well as any additional parasitic
capacitances at the preamplifier input. Therefore, the value of C1 must be less than the loading specification to
account for these additional capacitances.
The output network consisting of R5, R6, and C5 serves to ac couple the preamplifier circuit to any subsequent
electronics in the signal path. The 100-Ω resistor R5 limits in-rush current into coupling capacitor C5 and
prevents parasitic capacitance from cabling from causing instability. R6 prevents charge accumulation on C5.
Capacitor C5 is chosen to be the same value as C4; for simplicity however, the value of C5 must be large
enough to avoid attenuating low frequency information.
The feedback resistor elements must be selected to provide the correct response within the audio bandwidth. In
order to achieve the correct frequency response, the passive components in Figure 39 must satisfy Equation 1,
Equation 2, and Equation 3:
R2 u C2 3180Ps (1)
R3 u C3 75Ps (2)
R2 || R3 u C2 C3 318Ps (3)
R2, R3, and R4 must also be selected to meet the design requirements for gain. The gain at 1 kHz is determined
by subtracting 20 dB from gain of the circuit at very low frequency (near dc), as shown in Equation 4:
A1kHz ALF 20dB (4)
0.5 0
-20
Magnitude Deviation from Ideal (dB)
0 -40
-60
Amplitude (dBV)
-0.5 -80
-100
-1 -120
-140
-1.5 -160
10 100 1000 10000 10 100 1000 10000
Frequency (Hz) Frequency (Hz)
C006 C010
Figure 41. Measured Deviation from Ideal RIAA Response Figure 42. Output Spectrum for a 10 mVRMS, 1 kHz Input
Signal
10 Layout
VIN +
RG VOUT
RF
(Schematic Representation)
Place components
Run the input traces close to device and to
as far away from each other to reduce
the supply lines parasitic errors VS+
as possible RF
N/C N/C
RG
GND ±IN V+ GND
NOTE
These files require that either the TINA software (from DesignSoft™) or TINA-TI software
be installed. Download the free TINA-TI software from the TINA-TI folder.
11.5 Trademarks
SoundPlus, E2E are trademarks of Texas Instruments.
TINA-TI is a trademark of Texas Instruments, Inc and DesignSoft, Inc.
Blu-ray is a trademark of Blu-Ray Disc Assocation.
TINA, DesignSoft are trademarks of DesignSoft, Inc.
All other trademarks are the property of their respective owners.
11.6 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
11.7 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
www.ti.com 10-Dec-2020
PACKAGING INFORMATION
Orderable Device Status Package Type Package Pins Package Eco Plan Lead finish/ MSL Peak Temp Op Temp (°C) Device Marking Samples
(1) Drawing Qty (2) Ball material (3) (4/5)
(6)
OPA1641AID ACTIVE SOIC D 8 75 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 85 O1641A
OPA1641AIDGKR ACTIVE VSSOP DGK 8 2500 RoHS & Green Call TI | NIPDAUAG Level-2-260C-1 YEAR -40 to 85 1641
OPA1641AIDGKT ACTIVE VSSOP DGK 8 250 RoHS & Green Call TI | NIPDAUAG Level-2-260C-1 YEAR -40 to 85 1641
OPA1641AIDR ACTIVE SOIC D 8 2500 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 85 O1641A
OPA1642AID ACTIVE SOIC D 8 75 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 85 O1642A
OPA1642AIDGKR ACTIVE VSSOP DGK 8 2500 RoHS & Green NIPDAUAG Level-2-260C-1 YEAR -40 to 85 1642
OPA1642AIDGKT ACTIVE VSSOP DGK 8 250 RoHS & Green NIPDAUAG Level-2-260C-1 YEAR -40 to 85 1642
OPA1642AIDR ACTIVE SOIC D 8 2500 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 85 O1642A
OPA1644AID ACTIVE SOIC D 14 50 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 85 O1644A
OPA1644AIDR ACTIVE SOIC D 14 2500 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 85 O1644A
OPA1644AIPW ACTIVE TSSOP PW 14 90 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 85 O1644A
OPA1644AIPWR ACTIVE TSSOP PW 14 2000 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 85 O1644A
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com 10-Dec-2020
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
• Automotive - Q100 devices qualified for high-reliability automotive applications targeting zero defects
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com 5-Jan-2022
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com 5-Jan-2022
Pack Materials-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com 5-Jan-2022
TUBE
Pack Materials-Page 3
PACKAGE OUTLINE
D0008A SCALE 2.800
SOIC - 1.75 mm max height
SMALL OUTLINE INTEGRATED CIRCUIT
SEATING PLANE
.228-.244 TYP
[5.80-6.19]
.004 [0.1] C
A PIN 1 ID AREA
6X .050
[1.27]
8
1
.189-.197 2X
[4.81-5.00] .150
NOTE 3 [3.81]
4X (0 -15 )
4
5
8X .012-.020
B .150-.157 [0.31-0.51]
.069 MAX
[3.81-3.98] .010 [0.25] C A B [1.75]
NOTE 4
.005-.010 TYP
[0.13-0.25]
4X (0 -15 )
SEE DETAIL A
.010
[0.25]
.004-.010
0 -8 [0.11-0.25]
.016-.050
[0.41-1.27] DETAIL A
(.041) TYPICAL
[1.04]
4214825/C 02/2019
NOTES:
1. Linear dimensions are in inches [millimeters]. Dimensions in parenthesis are for reference only. Controlling dimensions are in inches.
Dimensioning and tolerancing per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not
exceed .006 [0.15] per side.
4. This dimension does not include interlead flash.
5. Reference JEDEC registration MS-012, variation AA.
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EXAMPLE BOARD LAYOUT
D0008A SOIC - 1.75 mm max height
SMALL OUTLINE INTEGRATED CIRCUIT
8X (.061 )
[1.55]
SYMM SEE
DETAILS
1
8
8X (.024)
[0.6] SYMM
(R.002 ) TYP
[0.05]
5
4
6X (.050 )
[1.27]
(.213)
[5.4]
EXPOSED
METAL EXPOSED
METAL
.0028 MAX .0028 MIN
[0.07] [0.07]
ALL AROUND ALL AROUND
4214825/C 02/2019
NOTES: (continued)
www.ti.com
EXAMPLE STENCIL DESIGN
D0008A SOIC - 1.75 mm max height
SMALL OUTLINE INTEGRATED CIRCUIT
8X (.061 )
[1.55] SYMM
1
8
8X (.024)
[0.6] SYMM
(R.002 ) TYP
5 [0.05]
4
6X (.050 )
[1.27]
(.213)
[5.4]
4214825/C 02/2019
NOTES: (continued)
8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
9. Board assembly site may have different recommendations for stencil design.
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