N-Channel Enhancement Mode Irfz44N Trenchmos Transistor: General Description Quick Reference Data
N-Channel Enhancement Mode Irfz44N Trenchmos Transistor: General Description Quick Reference Data
N-Channel Enhancement Mode Irfz44N Trenchmos Transistor: General Description Quick Reference Data
2 drain
g
3 source
tab drain 1 23 s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS Drain-source voltage - - 55 V
VDGR Drain-gate voltage RGS = 20 kΩ - 55 V
±VGS Gate-source voltage - - 20 V
ID Drain current (DC) Tmb = 25 ˚C - 49 A
ID Drain current (DC) Tmb = 100 ˚C - 35 A
IDM Drain current (pulse peak value) Tmb = 25 ˚C - 160 A
Ptot Total power dissipation Tmb = 25 ˚C - 110 W
Tstg, Tj Storage & operating temperature - - 55 175 ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Rth j-mb Thermal resistance junction to - - 1.4 K/W
mounting base
Rth j-a Thermal resistance junction to in free air 60 - K/W
ambient
STATIC CHARACTERISTICS
Tj= 25˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V(BR)DSS Drain-source breakdown VGS = 0 V; ID = 0.25 mA; 55 - - V
voltage Tj = -55˚C 50 - - V
VGS(TO) Gate threshold voltage VDS = VGS; ID = 1 mA 2.0 3.0 4.0 V
Tj = 175˚C 1.0 - - V
Tj = -55˚C - - 4.4
IDSS Zero gate voltage drain current VDS = 55 V; VGS = 0 V; - 0.05 10 µA
Tj = 175˚C - - 500 µA
IGSS Gate source leakage current VGS = ±10 V; VDS = 0 V - 0.04 1 µA
Tj = 175˚C - - 20 µA
±V(BR)GSS Gate source breakdown voltage IG = ±1 mA; 16 - - V
RDS(ON) Drain-source on-state VGS = 10 V; ID = 25 A - 15 22 mΩ
resistance Tj = 175˚C - - 42 mΩ
DYNAMIC CHARACTERISTICS
Tmb = 25˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
gfs Forward transconductance VDS = 25 V; ID = 25 A 6 - - S
Ciss Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 1350 1800 pF
Coss Output capacitance - 330 400 pF
Crss Feedback capacitance - 155 215 pF
Qg Total gate charge VDD = 44 V; ID = 50 A; VGS = 10 V - - 62 nC
Qgs Gate-cource charge - - 15 nC
Qgd Gate-drain (miller) charge - - 26 nC
td on Turn-on delay time VDD = 30 V; ID = 25 A; - 18 26 ns
tr Turn-on rise time VGS = 10 V; RG = 10 Ω - 50 75 ns
td off Turn-off delay time Resistive load - 40 50 ns
tf Turn-off fall time - 30 40 ns
Ld Internal drain inductance Measured from contact screw on - 3.5 - nH
tab to centre of die
Ld Internal drain inductance Measured from drain lead 6 mm - 4.5 - nH
from package to centre of die
Ls Internal source inductance Measured from source lead 6 mm - 7.5 - nH
from package to source bond pad
110
100
90 1
0.5
80
70 0.2
60 0.1
0.1
0.05 tp
50 PD tp D=
0.02 T
40
30 0.01 0 T t
20
10
0
0 20 40 60 80 100 120 140 160 180 0.001
1E-06 0.0001 0.01 1 100
Tmb / C t/s
100 30
16 9 VGS/V =
gfs/S
ID/A 8.0
10 8.5 25
80
7.5
20
60 7.0
15
6.5
40
10
6.0
20 5.5 5
5.0
4.5
0 0
0 2 4 6 8 10 4.0 0 20 40 60 80 100
VDS/V ID/A
35
6
2
30
6.5
7
25 1.5
8
9
20
10 1
15
0.5
10 -100 -50 0 50 100 150 200
0 10 20 30 40 50 60 70 80 90
ID/A Tmb / degC
Fig.6. Typical on-state resistance, Tj = 25 ˚C. Fig.9. Normalised drain-source on-state resistance.
RDS(ON) = f(ID); parameter VGS a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 25 A; VGS = 10 V
typ.
60 3
min.
40 2
20 1
Tj/C = 175 25
0 0
0 2 4 6 8 10 12 -100 -50 0 50 100 150 200
VGS/V Tj / C
80
1E-02
2% 60
typ 98%
1E-03 Tj/C = 175 25
40
1E-04
20
1E-05
0
1E-06 0 0.2 0.4 0.6 0.8 1 1.2 1.4
0 1 2 3 4 5 VSDS/V
2.5 WDSS%
120
110
2 100
90
Thousands pF
80
1.5 70
Ciss
60
50
1
40
30
.5 20
Coss 10
Crss 0
0 20 40 60 80 100 120 140 160 180
0.01 0.1 1 VDS/V 10 100 Tmb / C
Fig.12. Typical capacitances, Ciss, Coss, Crss. Fig.15. Normalised avalanche energy rating.
C = f(VDS); conditions: VGS = 0 V; f = 1 MHz WDSS% = f(Tmb); conditions: ID = 49 A
12
VGS/V VDD
10 +
L
VDS = 14V
8 VDS
VDS = 44V
6 VGS
-
-ID/100
0 T.U.T.
4
R 01
2 RGS
shunt
0
0 10 20 30 40 50
QG/nC
Fig.16. Avalanche energy test circuit.
Fig.13. Typical turn-on gate-charge characteristics.
VGS = f(QG); conditions: ID = 50 A; parameter VDS WDSS = 0.5 ⋅ LID2 ⋅ BVDSS /(BVDSS − VDD )
VDD
+
RD
VDS
VGS
-
RG
0 T.U.T.
MECHANICAL DATA
Dimensions in mm
4,5
Net Mass: 2 g max
10,3
max
1,3
3,7
2,8 5,9
min
15,8
max
3,0 max
3,0
not tinned
13,5
min
1,3
max 1 2 3
(2x) 0,9 max (3x)
0,6
2,54 2,54 2,4
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1999
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consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.