LM833 Low Noise, Audio Dual Operational Amplifier: Ms Slew Rate, mV/°C Temperature Coefficient of
LM833 Low Noise, Audio Dual Operational Amplifier: Ms Slew Rate, mV/°C Temperature Coefficient of
LM833 Low Noise, Audio Dual Operational Amplifier: Ms Slew Rate, mV/°C Temperature Coefficient of
Features 1 1
ELECTRICAL CHARACTERISTICS (VCC = +15 V, VEE = −15 V, TA = 25°C, unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
Input Offset Voltage (RS = 10 W, VO = 0 V) VIO − 0.3 5.0 mV
Average Temperature Coefficient of Input Offset Voltage DVIO/DT − 2.0 − mV/°C
RS = 10 W, VO = 0 V, TA = Tlow to Thigh
Input Offset Current (VCM = 0 V, VO = 0 V) IIO − 10 200 nA
Input Bias Current (VCM = 0 V, VO = 0 V) IIB − 300 1000 nA
Common Mode Input Voltage Range VICR − +14 +12 V
−12 −14 −
Large Signal Voltage Gain (RL = 2.0 kW, VO = ±10 V) AVOL 90 110 − dB
Output Voltage Swing: V
RL = 2.0 kW, VID = 1.0 V VO+ 10 13.7 −
RL = 2.0 kW, VID = 1.0 V VO− − −14.1 −10
RL = 10 kW, VID = 1.0 V VO+ 12 13.9 −
RL = 10 kW, VID = 1.0 V VO− − −14.7 −12
AC ELECTRICAL CHARACTERISTICS (VCC = +15 V, VEE = −15 V, TA = 25°C, unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
Slew Rate (Vin = −10 V to +10 V, RL = 2.0 kW, AV = +1.0) SR 5.0 7.0 − V/ms
Gain Bandwidth Product (f = 100 kHz) GBW 10 15 − MHz
Unity Gain Frequency (Open Loop) fU − 9.0 − MHz
Unity Gain Phase Margin (Open Loop) qm − 60 − °
Equivalent Input Noise Voltage (RS = 100 W, f = 1.0 kHz) en − 4.5 − nVń ǸHz
Equivalent Input Noise Current (f = 1.0 kHz) in − 0.5 − pAń ǸHz
Power Bandwidth (VO = 27 Vpp, RL = 2.0 kW, THD ≤ 1.0%) BWP − 120 − kHz
Distortion (RL = 2.0 kW, f = 20 Hz to 20 kHz, VO = 3.0 Vrms, AV = +1.0) THD − 0.002 − %
Channel Separation (f = 20 Hz to 20 kHz) CS − −120 − dB
PD , MAXIMUM POWER DISSIPATION (mW)
800 1000
IIB , INPUT BIAS CURRENT (nA)
VCC = +15 V
800 VEE = −15 V
600 VCM = 0 V
600
400
400
200
200
0 0
−50 0 50 100 150 −55 −25 0 25 50 75 100 125
TA, AMBIENT TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C)
Figure 1. Maximum Power Dissipation Figure 2. Input Bias Current versus Temperature
versus Temperature
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LM833
800 10
VCC
RL = ∞
I IB , INPUT BIAS CURRENT (nA)
IS
TA = 25°C
6.0 VO
+
400 VEE
4.0
200
2.0
0 0
5.0 10 15 20 0 5.0 10 15 20
VCC, |VEE|, SUPPLY VOLTAGE (V) VCC, |VEE|, SUPPLY VOLTAGE (V)
110 110
VCC = +15 V
VEE = −15 V RL = 2.0 kW
AVOL, DC VOLTAGE GAIN (dB)
100
90
95
90 80
−55 −25 0 25 50 75 100 125 5.0 10 15 20
TA, AMBIENT TEMPERATURE (°C) VCC, |VEE|, SUPPLY VOLTAGE (V)
120 0
AVOL, OPEN LOOP VOLTAGE GAIN (dB)
20
GBW, GAIN BANDWIDTH PRODUCT (MHz)
∅ , EXCESS PHASE (DEGREES)
100
45 15
80
Phase 10
60 90
0 180 0
1.0 10 100 1.0 k 10 k 100 k 1.0 M 10 M −55 −25 0 25 50 75 100 125
f, FREQUENCY (Hz) TA, AMBIENT TEMPERATURE (°C)
Figure 7. Open Loop Voltage Gain and Figure 8. Gain Bandwidth Product
Phase versus Frequency versus Temperature
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LM833
10 VCC = +15 V
VEE = −15 V −
Vin + VO
4.0 RL = 2.0 kW RL
AV = +1.0
0 2.0
5.0 10 15 20 −55 −25 0 25 50 75 100 125
VCC, |VEE|, SUPPLY VOLTAGE (V) TA, AMBIENT TEMPERATURE (°C)
Figure 9. Gain Bandwidth Product versus Figure 10. Slew Rate versus Temperature
Supply Voltage
10 35
RL = 2.0k W
AV = +1.0
30
25
6.0 Rising
20
VCC = +15 V
4.0 15 VEE = −15 V
+ VO
− RL = 2.0 kW
Vin RL 10 THD v 1.0%
2.0 TA = 25°C
5.0
0 0
5.0 10 15 20 10 100 1.0 k 10 k 1.0 M 10 M 100 k
VCC, |VEE|, SUPPLY VOLTAGE (V) f, FREQUENCY (Hz)
Figure 11. Slew Rate versus Supply Voltage Figure 12. Output Voltage versus Frequency
20 15
V sat , OUTPUT SATURATION VOLTAGE |V|
RL = 10 kW VO +
15 TA = 25°C +Vsat
VO, OUTPUT VOLTAGE (Vpp )
10
5.0
−Vsat
14
0
−5.0
Figure 13. Maximum Output Voltage Figure 14. Output Saturation Voltage
versus Supply Voltage versus Temperature
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LM833
0 20
100 1.0 k 10 k 100 k 1.0 M 10 M 100 1.0 k 10 k 100 k 1.0 M 10 M
f, FREQUENCY (Hz) f, FREQUENCY (Hz)
Figure 15. Power Supply Rejection Figure 16. Common Mode Rejection
versus Frequency versus Frequency
THD, TOTAL HARMONIC DISTORTION (%)
1.0 10
VCC = +15 V
VEE = −15 V
0.01 VO = 1.0 Vrms RS = 100 W
2.0 TA = 25°C
VO = 3.0 Vrms
0.001 1.0
10 100 1.0 k 10 k 100 k 10 100 1.0 k 10 k 100 k
f, FREQUENCY (Hz) f, FREQUENCY (Hz)
Figure 17. Total Harmonic Distortion Figure 18. Input Referred Noise Voltage
versus Frequency versus Frequency
2.0 100
VCC = +15 V
i n , INPUT NOISE CURRENT (pA/√ Hz )
VCC = +15 V
e n, INPUT NOISE VOLTAGE (nV/√ Hz )
0.7
10
0.5
0.4
0.3
0.2 1.0
10 100 1.0 k 10 k 100 k 1.0 10 100 1.0 k 10 k 100 k 1.0 M
f, FREQUENCY (Hz) RS, SOURCE RESISTANCE (W)
Figure 19. Input Referred Noise Current Figure 20. Input Referred Noise Voltage
versus Frequency versus Source Resistance
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LM833
Figure 21. Inverting Amplifier Figure 22. Noninverting Amplifier Slew Rate
VCC = +15 V
VO , OUTPUT VOLTAGE (10 mV/DIV)
VEE = −15 V
RL = 2.0 kW
CL = 0 pF
AV = +1.0
TA = 25°C
ORDERING INFORMATION
Device Package Shipping †
LM833N PDIP−8
LM833NG PDIP−8 50 Units / Rail
(Pb−Free)
LM833D SOIC−8
LM833DG SOIC−8 98 Units / Rail
(Pb−Free)
LM833DR2 SOIC−8
LM833DR2G SOIC−8 2500 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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LM833
PACKAGE DIMENSIONS
SOIC−8
D SUFFIX
CASE 751−07
ISSUE AG
NOTES:
−X− 1. DIMENSIONING AND TOLERANCING PER
A ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE
MOLD PROTRUSION.
8 5 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
B S 0.25 (0.010) M Y M 5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
1 PROTRUSION SHALL BE 0.127 (0.005) TOTAL
4 IN EXCESS OF THE D DIMENSION AT
−Y− K MAXIMUM MATERIAL CONDITION.
6. 751−01 THRU 751−06 ARE OBSOLETE. NEW
STANDARD IS 751−07.
G
MILLIMETERS INCHES
C N X 45 _ DIM MIN MAX MIN MAX
A 4.80 5.00 0.189 0.197
SEATING B 3.80 4.00 0.150 0.157
PLANE
C 1.35 1.75 0.053 0.069
−Z− D 0.33 0.51 0.013 0.020
0.10 (0.004) G 1.27 BSC 0.050 BSC
H M J H 0.10 0.25 0.004 0.010
D J 0.19 0.25 0.007 0.010
K 0.40 1.27 0.016 0.050
M 0_ 8_ 0 _ 8 _
0.25 (0.010) M Z Y S X S N 0.25 0.50 0.010 0.020
S 5.80 6.20 0.228 0.244
SOLDERING FOOTPRINT*
1.52
0.060
7.0 4.0
0.275 0.155
0.6 1.270
0.024 0.050
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LM833
PACKAGE DIMENSIONS
PDIP−8
N SUFFIX
CASE 626−05
ISSUE L
NOTES:
1. DIMENSION L TO CENTER OF LEAD WHEN
8 5 FORMED PARALLEL.
2. PACKAGE CONTOUR OPTIONAL (ROUND OR
SQUARE CORNERS).
−B− 3. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
1 4
MILLIMETERS INCHES
DIM MIN MAX MIN MAX
A 9.40 10.16 0.370 0.400
F B 6.10 6.60 0.240 0.260
C 3.94 4.45 0.155 0.175
NOTE 2 −A− D 0.38 0.51 0.015 0.020
L F 1.02 1.78 0.040 0.070
G 2.54 BSC 0.100 BSC
H 0.76 1.27 0.030 0.050
J 0.20 0.30 0.008 0.012
C K 2.92 3.43 0.115 0.135
L 7.62 BSC 0.300 BSC
M −−− 10 _ −−− 10_
−T− J N 0.76 1.01 0.030 0.040
SEATING N
PLANE
M
D K
H G
0.13 (0.005) M T A M B M
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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