BUK92150-55A: 1. Description
BUK92150-55A: 1. Description
BUK92150-55A: 1. Description
1. Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOS™ technology, featuring very low on-state resistance.
Product availability:
BUK92150-55A in SOT428 (D-PAK).
2. Features
■ TrenchMOS™ technology
■ Q101 compliant
■ 175 °C rated
■ Logic level compatible.
3. Applications
■ Automotive and general purpose power switching:
◆ 12 V and 24 V loads
◆ Motors, lamps and solenoids.
4. Pinning information
Table 1: Pinning - SOT428 (D-PAK), simplified outline and symbol
Pin Description Simplified outline Symbol
1 gate (g)
mb d
2 drain (d)
3 source (s)
g
mb mounting base;
MBB076 s
connected to
2
drain (d) 1 3
Top view MBK091
SOT428 (D-PAK)
Philips Semiconductors BUK92150-55A
TrenchMOS™ logic level FET
6. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC) - 55 V
VDGR drain-gate voltage (DC) RGS = 20 kΩ - 55 V
VGS gate-source voltage (DC) - ±15 V
ID drain current (DC) Tmb = 25 °C; VGS = 5 V; - 11 A
Figure 2 and 3
Tmb = 100 °C; VGS = 5 V; Figure 2 - 7.8 A
IDM peak drain current Tmb = 25 °C; pulsed; tp ≤ 10 µs; - 44 A
Figure 3
Ptot total power dissipation Tmb = 25 °C; Figure 1 - 36 W
Tstg storage temperature −55 +175 °C
Tj junction temperature −55 +175 °C
Source-drain diode
IDR reverse drain current (DC) Tmb = 25 °C - 11 A
IDRM peak reverse drain current Tmb = 25 °C; pulsed; tp ≤ 10 µs - 44 A
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source avalanche unclamped inductive load; ID = 11 A; - 16 mJ
energy VDS ≤ 55 V; VGS = 5 V; RGS = 50 Ω;
starting Tj = 25 °C
9397 750 09725 © Koninklijke Philips Electronics N.V. 2002. All rights reserved.
03na19 03nf49
120 12
Pder ID
(%) (A)
80 8
40 4
0 0
0 50 100 150 200 0 50 100 150 200
Tmb (°C) Tmb (°C)
Fig 1. Normalized total power dissipation as a Fig 2. Continuous drain current as a function of
function of mounting base temperature. mounting base temperature.
102 03nf47
tp = 10 µs
ID Limit RDSon = VDS/ID
(A)
10
100 µs
1 ms
DC
1 10 ms
100 ms
10-1
1 10 102
VDS (V)
9397 750 09725 © Koninklijke Philips Electronics N.V. 2002. All rights reserved.
7. Thermal characteristics
Table 4: Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistance from junction to ambient - 71.4 - K/W
Rth(j-mb) thermal resistance from junction to mounting Figure 4 - - 4.1 K/W
base
03nf48
10
Zth(j-mb)
(K/W) δ = 0.5
0.2
1
0.1
0.05
0.02
10-1 tp
P δ=
T
single shot
tp t
T
10-2
10-6 10-5 10-4 10-3 10-2 10-1 tp (s) 1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
9397 750 09725 © Koninklijke Philips Electronics N.V. 2002. All rights reserved.
8. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V(BR)DSS drain-source breakdown ID = 0.25 mA; VGS = 0 V
voltage Tj = 25 °C 55 - - V
Tj = −55 °C 50 - - V
VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS;
Figure 9
Tj = 25 °C 1 1.5 2 V
Tj = 175 °C 0.5 - - V
Tj = −55 °C - - 2.3 V
IDSS drain-source leakage current VDS = 55 V; VGS = 0 V
Tj = 25 °C - 0.05 10 µA
Tj = 175 °C - - 500 µA
IGSS gate-source leakage current VGS = ±10 V; VDS = 0 V - 2 100 nA
RDSon drain-source on-state VGS = 5 V; ID = 5 A;
resistance Figure 7 and 8
Tj = 25 °C - 120 140 mΩ
Tj = 175 °C - - 280 mΩ
VGS = 4.5 V; ID = 5 A; - - 155 mΩ
VGS = 10 V; ID = 5 A; - 97 125 mΩ
Dynamic characteristics
Qg(tot) total gate charge VGS = 5 V; VDD = 44 V; - 6 - nC
Qgs gate-to-source charge ID = 5 A; Figure 14 - 0.72 - nC
Qgd gate-to-drain (Miller) charge - 2.6 - nC
Ciss input capacitance VGS = 0 V; VDS = 25 V; - 240 338 pF
Coss output capacitance f = 1 MHz; Figure 12 - 50 65 pF
Crss reverse transfer capacitance - 40 58 pF
td(on) turn-on delay time VDD = 20 V; RL = 3.3 Ω; - 8 - ns
tr rise time VGS = 5 V; RG = 10 Ω; - 57 - ns
td(off) turn-off delay time - 16 - ns
tf fall time - 13 - ns
Ld internal drain inductance measured from drain to - 2.5 - nH
centre of die
Ls internal source inductance measured from source lead - 7.5 - nH
to source bond pad
9397 750 09725 © Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Table 5: Characteristics…continued
Tj = 25 °C unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
Source-drain diode
VSD source-drain (diode forward) IS = 15 A; VGS = 0 V; - 0.85 1.2 V
voltage Figure 15
trr reverse recovery time IS = 20 A; dIS/dt = −100 A/µs - 24 - ns
Qr recovered charge VGS = −10 V; VDS = 30 V - 26 - nC
9397 750 09725 © Koninklijke Philips Electronics N.V. 2002. All rights reserved.
03nf44 03nf43
16 140
10 5 label is VGS (V)
ID
(A) RDSon
(mΩ)
4
12
3.8 120
3.6
8 3.4
3.2
100
3
4
2.8
2.6
2.4
2.2
0 80
0 2 4 6 8 10 0 5 10 15
VDS (V) VGS (V)
Tj = 25 °C Tj = 25 °C; ID = 5 A
Fig 5. Output characteristics: drain current as a Fig 6. Drain-source on-state resistance as a function
function of drain-source voltage; typical values. of gate-source voltage; typical values.
03nf45 03ne89
300 2
3 3.2 3.4
RDSon
a
(mΩ)
3.6
250 1.5
3.8
200 1
4
100 0
2 6 10 14 -60 0 60 120 180
ID (A)
Tj (°C)
Tj = 25 °C R DSon
a = ---------------------------
-
R DSon ( 25 °C )
Fig 7. Drain-source on-state resistance as a function Fig 8. Normalized drain-source on-state resistance
of drain current; typical values. factor as a function of junction temperature.
9397 750 09725 © Koninklijke Philips Electronics N.V. 2002. All rights reserved.
03aa33 03aa36
2.5 10-1
VGS(th) ID
(V) (A)
2 max 10-2
1 min 10-4
0.5 10-5
0 10-6
-60 0 60 120 o 180 0 1 2 3
Tj ( C) VGS (V)
03nf41 03nf46
10 600
gfs
(S) C
8 (pF)
400
Ciss
6
4
Coss
200
Crss
0 0
0 4 8 12 16 10-2 10-1 1 10 102
ID (A) VDS (V)
9397 750 09725 © Koninklijke Philips Electronics N.V. 2002. All rights reserved.
03nf42 03nf40
8 5
ID VGS
(A) (V)
4
6
3
VDD = 14 V VDD = 44 V
4
2
Tj = 175 °C Tj = 25 °C 1
0 0
0 1 2 3 4 0 2 4 6
VGS (V) QG (nC)
VDS = 25 V Tj = 25 °C; ID = 5 A
Fig 13. Transfer characteristics: drain current as a Fig 14. Gate-source voltage as a function of turn-on
function of gate-source voltage; typical values. gate charge; typical values.
03nf39
30
IS
(A)
20
10
Tj = 175 °C Tj = 25 °C
0
0.0 0.5 1.0 1.5 2.0
VSD (V)
VGS = 0 V
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values.
9397 750 09725 © Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9. Package outline
Plastic single-ended surface mounted package (Philips version of D-PAK); 3 leads
(one lead cropped) SOT428
seating plane
y
A
E A A2
b2 A1 E1
mounting
base
D1
D
HE
L2
2
L1
L
1 3
b1 b w M A c
e
e1
0 10 20 mm
scale
mm 2.38 0.65 0.93 0.89 1.1 5.46 0.4 6.22 6.73 4.81 2.285 4.57 10.4 2.95 0.9
4.0 0.5 0.2 0.2
2.22 0.45 0.73 0.71 0.9 5.26 0.2 5.98 6.47 4.45 9.6 2.55 0.5
Note
1. Measured from heatsink back to lead.
99-09-13
SOT428 TO-252 SC-63
01-12-11
9397 750 09725 © Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9397 750 09725 © Koninklijke Philips Electronics N.V. 2002. All rights reserved.
[1] Please consult the most recently issued data sheet before initiating or completing a design.
[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
14. Trademarks
TrenchMOS — is a trademark of Koninklijke Philips Electronics N.V.
Contact information
For additional information, please visit http://www.semiconductors.philips.com.
For sales office addresses, send e-mail to: sales.addresses@www.semiconductors.philips.com. Fax: +31 40 27 24825
9397 750 09725 © Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Contents
1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
4 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1
5 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2
6 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
7 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
7.1 Transient thermal impedance . . . . . . . . . . . . . . 4
8 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11
11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 12
12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
13 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
14 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12