AO4606 Complementary Enhancement Mode Field Effect Transistor
AO4606 Complementary Enhancement Mode Field Effect Transistor
AO4606 Complementary Enhancement Mode Field Effect Transistor
D2 D1
S2 1 8 D2
G2 2 7 D2
S1 3 6 D1
G1 4 5 D1 G2 G1
S2 S1
SOIC-8
n-channel p-channel
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
30 20
10V 6V
25 5V
16 VDS=5V
4.5V
4V
20
12
ID (A)
ID(A)
15
3.5V
8
10
125°C
VGS=3V 4
5
25°C
0 0
0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
VDS (Volts) VGS (Volts)
Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics
60 1.6
VGS=10V
Normalized On-Resistance 1.5 ID=5A
50
1.4
VGS=4.5V
RDS(ON) (mΩ)
40 VGS=4.5V 1.3
1.2
30
1.1
20 1
VGS=10V
0.9
10
0 5 10 15 20 0.8
0 50 100 150 200
ID (Amps)
Figure 3: On-Resistance vs. Drain Current and Gate Temperature ( °C)
Voltage Figure 4: On-Resistance vs. Junction Temperature
70 1.0E+01
60 1.0E+00
ID=5A
1.0E-01
50
IS Amps
RDS(ON) (mΩ)
125°C 1.0E-02
40 125°C
1.0E-03
30
25°C
1.0E-04
20 25°C
1.0E-05
10 0.0 0.2 0.4 0.6 0.8 1.0
2 4 6 8 10 VSD (Volts)
Figure 6: Body diode characteristics
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
10 1000
VDS=15V 900 f=1MHz
ID=6.9A VGS=0V
8 800
700
Capacitance (pF)
Ciss
VGS (Volts)
6 600
500
4 400
300
2 200 Coss
100
Crss
0 0
0 2 4 6 8 10 12 14 0 5 10 15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge characteristics Figure 8: Capacitance Characteristics
100 40
TJ(Max)=150°C
TJ(Max)=150°C
RDS(ON) TA=25°C
TA=25°C
limited
100µs 30
10 1ms 10µs
ID (Amps)
Power W
10ms
20
0.1s
1
1s
10
10s
DC
0.1 0
0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000
VDS (Volts) Pulse Width (s)
Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Junction-to-
Operating Area (Note E) Ambient (Note E)
10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Z θJA Normalized Transient
RθJA=62.5°C/W
Thermal Resistance
0.1 PD
Ton
Single Pulse T
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
2
A: The value of R θJAθJA
is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TAA =25°C. The value
in anyingiven
value any aapplication depends
given application on the user's
depends on thespecific board design.
user's specific The current
board design. rating israting
The current based is on the ton
based ≤ the
10s tthermal resistance
≤ 10s thermal rating.
resistance
B: Repetitive rating, pulse width limited by junction temperature.
rating.
C. Repetitive
B: The R θJA israting,
the sum of the
pulse thermal
width limitedimpedence
by junctionfrom junction to lead RθJL and lead to ambient. RθJL and RθJC are equivalent terms referring to
temperature.
thermal
C. The Rresistance fromof
θJA is the sum junction to drain
the thermal lead.
impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300 80 µs µs pulses,
pulses, duty
duty cycle
cycle 0.5%
0.5% max.
max.
E. These tests are performed with the device mounted on 1 in22 FR-4 board with 2oz. Copper, in a still air environment with TAA=25°C. The SOA
curve provides a single pulse rating.
Rev 8: Feb 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
30 30
-10V -4.5V
-6V VDS=-5V
25 -5V 25
20 20
-4V
-ID (A)
-ID(A)
15 15
-3.5V
10 10
5 5 125°C
VGS=-3V 25°C
0 0
0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
-VDS (Volts) -VGS(Volts)
Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics
60 1.60
55 ID=-6A
Normalized On-Resistance
50 VGS=-4.5V
1.40 VGS=-10V
45
RDS(ON) (mΩ)
40
35 1.20 VGS=-4.5V
30 VGS=-10V
25
1.00
20
15
0.80
10
0 25 50 75 100 125 150 175
0 5 10 15 20 25
-ID (A) Temperature (°C)
Figure 4: On-Resistance vs. Junction
Figure 3: On-Resistance vs. Drain Current and
Temperature
Gate Voltage
80 1.0E+01
70 ID=-6A 1.0E+00
60 1.0E-01
50 125°C
RDS(ON) (mΩ)
1.0E-02
-IS (A)
125°C
40
1.0E-03
30
25°C 1.0E-04
20 25°C
1.0E-05
10
1.0E-06
0 0.0 0.2 0.4 0.6 0.8 1.0
3 4 5
6 7 8 9 10
-VGS (Volts) -VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics
10 1500
VDS=-15V
ID=-6A 1250
8 Ciss
Capacitance (pF)
1000
-VGS (Volts)
6
750
4
500
Coss Crss
2
250
0 0
0 4 8 12 16 20 0 5 10 15 20 25 30
-Qg (nC) -VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics
100.0
40
TJ(Max)=150°C, TA=25°C TJ(Max)=150°C
TA=25°C
RDS(ON) 10µs 30
10.0 100µs
limited
Power (W)
-ID (Amps)
0.1s 1ms
20
10ms
1.0
1s 10
10s DC
0
0.1
0.001 0.01 0.1 1 10 100 1000
0.1 1 10 100
-VDS (Volts) Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Figure 9: Maximum Forward Biased Safe
Ambient (Note E)
Operating Area (Note E)
10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZθJA Normalized Transient
RθJA=62.5°C/W
Thermal Resistance
PD
0.1
Ton
T
Single Pulse
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance