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    BY251 - BY255: PRV: 200 - 1300 Volts Io: 3.0 Amperes

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    aw
    This document provides specifications for silicon rectifier diodes rated from 200 to 1300 volts. The diodes have a maximum forward current of 3 amps and can withstand high surge currents. They feature low forward voltage, reverse current, and reliability. Key mechanical properties include a plastic case and axial leads. Electrical ratings include maximum voltage, current, capacitance, and temperature ranges. Curves show current and voltage deratings with temperature as well as typical forward, reverse, and capacitance characteristics.

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    BY251 - BY255: PRV: 200 - 1300 Volts Io: 3.0 Amperes

    Uploaded by

    aw
    8 views3 pages
    This document provides specifications for silicon rectifier diodes rated from 200 to 1300 volts. The diodes have a maximum forward current of 3 amps and can withstand high surge currents. They feature low forward voltage, reverse current, and reliability. Key mechanical properties include a plastic case and axial leads. Electrical ratings include maximum voltage, current, capacitance, and temperature ranges. Curves show current and voltage deratings with temperature as well as typical forward, reverse, and capacitance characteristics.

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    BY251-5

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    This document provides specifications for silicon rectifier diodes rated from 200 to 1300 volts. The diodes have a maximum forward current of 3 amps and can withstand high surge currents. They feature low forward voltage, reverse current, and reliability. Key mechanical properties include a plastic case and axial leads. Electrical ratings include maximum voltage, current, capacitance, and temperature ranges. Curves show current and voltage deratings with temperature as well as typical forward, reverse, and capacitance characteristics.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    8 views3 pages

    BY251 - BY255: PRV: 200 - 1300 Volts Io: 3.0 Amperes

    Uploaded by

    aw
    This document provides specifications for silicon rectifier diodes rated from 200 to 1300 volts. The diodes have a maximum forward current of 3 amps and can withstand high surge currents. They feature low forward voltage, reverse current, and reliability. Key mechanical properties include a plastic case and axial leads. Electrical ratings include maximum voltage, current, capacitance, and temperature ranges. Curves show current and voltage deratings with temperature as well as typical forward, reverse, and capacitance characteristics.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 3

    BY251 - BY255 SILICON RECTIFIER DIODES

    PRV : 200 - 1300 Volts DO - 201AD


    Io : 3.0 Amperes
    1.00 (25.4)
    0.21 (5.33)
    FEATURES : 0.19 (4.83)
    MIN.
    * High current capability
    * High surge current capability
    0.375 (9.53)
    * High reliability 0.285 (7.24)
    * Low reverse current
    * Low forward voltage drop
    1.00 (25.4)
    0.052 (1.32)
    MIN.
    MECHANICAL DATA : 0.048 (1.22)
    * Case : DO-201AD Molded plastic
    * Epoxy : UL94V-O rate flame retardant
    * Lead : Axial lead solderable per MIL-STD-202,
    Method 208 guaranteed Dimensions in inches and ( millimeters )
    * Polarity : Color band denotes cathode end
    * Mounting position : Any
    * Weight : 0.929 grams

    MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS


    Rating at 25 °C ambient temperature unless otherwise specified.
    Single phase, half wave, 60 Hz, resistive or inductive load.
    For capacitive load, derate current by 20%.

    RATING SYMBOL BY251 BY252 BY253 BY254 BY255 UNIT


    Maximum Repetitive Peak Reverse Voltage VRRM 200 400 600 800 1300 V
    Maximum RMS Voltage VRMS 140 280 420 560 910 V
    Maximum DC Blocking Voltage VDC 200 400 600 800 1300 V
    Maximum Average Forward Current
    IF 3.0 A
    0.375"(9.5mm) Lead Length Ta = 50 °C
    Peak Forward Surge Current
    8.3ms Single half sine wave Superimposed IFSM 100 A
    on rated load (JEDEC Method)
    Maximum Forward Voltage at IF = 3.0 Amps. VF 1.1 V
    Maximum DC Reverse Current Ta = 25 °C IR 20 µA
    at rated DC Blocking Voltage Ta = 100 °C IR(H) 50 µA
    Typical Junction Capacitance (Note1) CJ 50 pF
    Typical Thermal Resistance (Note2) RθJA 18 °C/W
    Junction Temperature Range TJ - 65 to + 175 °C
    Storage Temperature Range TSTG - 65 to + 175 °C

    Notes :
    (1) Measured at 1.0 MHz and applied reverse voltage of 4.0V DC
    (2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted.
    Page 1 of 2 Rev. 01 : Mar 23, 2002
    RATING AND CHARACTERISTIC CURVES ( BY251 - BY255 )

    FIG.1 - DERATING CURVE FOR OUTPUT FIG.2 - MAXIMUM NON-REPETITIVE PEAK


    RECTIFIED CURRENT FORWARD SURGE CURRENT
    3.0 100
    AVERAGE FORWARD OUTPUT

    Ta = 25 °C

    PEAK FORWARD SURGE


    CURRENT, AMPERES
    2.4 80
    CURRENT, AMPERES

    1.8 60

    1.2 40

    0.6 20

    NON-REPETITIVE
    0 0
    0 25 50 75 100 125 150 175 1 2 4 6 10 20 40 60 100

    AMBIENT TEMPERATURE, ( ° C) NUMBER OF CYCLES AT 60Hz

    FIG.3 - TYPICAL FORWARD CHARACTERISTICS FIG 4 . - TYPICAL JUNCTION CAPACITANCE


    JUNCTION CAPACITANCE,

    100 100

    50 T J = 25 °C
    FORWARD CURRENT, AMPERES

    (pF)

    10 10

    5
    Pulse W idth = 300 µs
    2% Duty Cycle
    1.0 1
    T J = 25 °C 1 2 4 10 20 40 100

    REVERSE VOLTAGE, VOLTS


    0.1

    FIG. 5 - TYPICAL REVERSE CHARACTERISTICS


    REVERSE CURRENT, MICROAMPERES

    0.01 10
    0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
    Ta = 100 °C
    FORWARD VOLTAGE, VOLTS
    1.0

    0.1

    Ta = 25 °C

    0.01
    0 20 40 60 80 100 120 140

    PERCENT OF RATED REVERSE


    VOLTAGE, (%)

    Page 2 of 2 Rev. 01 : Mar 23, 2003


    This datasheet has been download from:

    www.datasheetcatalog.com

    Datasheets for electronics components.

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