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    1N5400G - 1N5408G: PRV: 50 - 1000 Volts Io: 3.0 Amperes

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    Geovanny SanJuan
    1. This document provides specifications for 1N5400G - 1N5408G glass passivated silicon rectifier diodes with peak reverse voltages ranging from 50V to 1000V and forward current ratings up to 3A. 2. The diodes feature a glass passivated chip, low forward voltage drop, low reverse current, and high reliability. They are packaged in a DO-201AD plastic case and use lead-free, flame retardant epoxy. 3. Electrical characteristics include maximum ratings for peak reverse voltage, average forward current, peak forward surge current, forward voltage drop, and reverse leakage current over operating temperature ranges from -65°C to +175°C. Curves show

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    1N5400G - 1N5408G: PRV: 50 - 1000 Volts Io: 3.0 Amperes

    Uploaded by

    Geovanny SanJuan
    29 views2 pages
    1. This document provides specifications for 1N5400G - 1N5408G glass passivated silicon rectifier diodes with peak reverse voltages ranging from 50V to 1000V and forward current ratings up to 3A. 2. The diodes feature a glass passivated chip, low forward voltage drop, low reverse current, and high reliability. They are packaged in a DO-201AD plastic case and use lead-free, flame retardant epoxy. 3. Electrical characteristics include maximum ratings for peak reverse voltage, average forward current, peak forward surge current, forward voltage drop, and reverse leakage current over operating temperature ranges from -65°C to +175°C. Curves show

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    1n5406.pdf

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    1. This document provides specifications for 1N5400G - 1N5408G glass passivated silicon rectifier diodes with peak reverse voltages ranging from 50V to 1000V and forward current ratings up to 3A. 2. The diodes feature a glass passivated chip, low forward voltage drop, low reverse current, and high reliability. They are packaged in a DO-201AD plastic case and use lead-free, flame retardant epoxy. 3. Electrical characteristics include maximum ratings for peak reverse voltage, average forward current, peak forward surge current, forward voltage drop, and reverse leakage current over operating temperature ranges from -65°C to +175°C. Curves show

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    29 views2 pages

    1N5400G - 1N5408G: PRV: 50 - 1000 Volts Io: 3.0 Amperes

    Uploaded by

    Geovanny SanJuan
    1. This document provides specifications for 1N5400G - 1N5408G glass passivated silicon rectifier diodes with peak reverse voltages ranging from 50V to 1000V and forward current ratings up to 3A. 2. The diodes feature a glass passivated chip, low forward voltage drop, low reverse current, and high reliability. They are packaged in a DO-201AD plastic case and use lead-free, flame retardant epoxy. 3. Electrical characteristics include maximum ratings for peak reverse voltage, average forward current, peak forward surge current, forward voltage drop, and reverse leakage current over operating temperature ranges from -65°C to +175°C. Curves show

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 2

    1N5400G - 1N5408G GLASS PASSIVATED JUNCTION

    SILICON RECTIFIERS
    PRV : 50 - 1000 Volts
    DO - 201AD
    Io : 3.0 Amperes
    FEATURES :
    1.00 (25.4)
    * Glass passivated chip 0.21 (5.33) MIN.
    * High current capability 0.19 (4.83)
    * High reliability
    * Low reverse current 0.375 (9.53)
    * Low forward voltage drop 0.285 (7.24)
    * Pb / RoHS Free

    MECHANICAL DATA : 0.052 (1.32)


    1.00 (25.4)
    MIN.
    * Case : DO-201AD Molded plastic 0.048 (1.22)
    * Epoxy : UL94V-O rate flame retardant
    * Lead : Axial lead solderable per MIL-STD-202,
    Method 208 guaranteed
    * Polarity : Color band denotes cathode end
    * Mounting position : Any Dimensions in inches and ( millimeters )
    * Weight : 1.16 grams

    MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS


    Rating at 25 °C ambient temperature unless otherwise specified.
    Single phase, half wave, 60 Hz, resistive or inductive load.
    For capacitive load, derate current by 20%.

    RATING SYMBOL 1N5400G 1N5401G 1N5402G 1N5404G 1N5406G 1N5407G 1N5408G UNIT
    Maximum Repetitive Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 V
    Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 V
    Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 V
    Maximum Average Forward Current
    IF(AV) 3.0 A
    0.375"(9.5mm) Lead Length Ta = 75 °C
    Peak Forward Surge Current
    8.3ms Single half sine wave Superimposed IFSM 150 A
    on rated load (JEDEC Method)
    Maximum Forward Voltage at IF = 3.0 Amps. VF 1.0 V
    Maximum DC Reverse Current Ta = 25 °C IR 5.0 µA
    at rated DC Blocking Voltage Ta = 100 °C IR(H) 50 µA
    Typical Junction Capacitance (Note1) CJ 50 pF
    Typical Thermal Resistance (Note2) RθJA 15 °C/W
    Junction Temperature Range TJ - 65 to + 175 °C
    Storage Temperature Range TSTG - 65 to + 175 °C

    Notes :
    (1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC
    (2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted.

    Page 1 of 2 Rev. 02 : March 31, 2005


    RATING AND CHARACTERISTIC CURVES ( 1N5400G - 1N5408G )

    FIG.1 - DERATING CURVE FOR OUTPUT FIG.2 - MAXIMUM NON-REPETITIVE PEAK


    RECTIFIED CURRENT FORWARD SURGE CURRENT
    AVERAGE FORWARD OUTPUT

    3.0 150

    PEAK FORWARD SURGE


    CURRENT, AMPERES

    Ta = 25 °C

    CURRENT, AMPERES
    2.4 120

    1.8 90

    1.2 60

    0.6 30

    0 0
    0 25 50 75 100 125 150 175 1 2 4 6 10 20 40 60 100

    CASE TEMPERATURE, ( °C) NUMBER OF CYCLES AT 60Hz

    FIG.3 - TYPICAL FORWARD CHARACTERISTICS FIG 4 . - TYPICAL JUNCTION CAPACITANCE


    JUNCTION CAPACITANCE, (pF)

    100 100

    50 TJ = 25 °C
    FORWARD CURRENT, AMPERES

    10 10

    Pulse Width = 300 µs


    2% Duty Cycle
    1.0 1
    1 2 4 10 20 40 100
    TJ = 25 °C
    REVERSE VOLTAGE, VOLTS
    0.1

    FIG. 5 - TYPICAL REVERSE CHARACTERISTICS


    0.01 10
    0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
    Ta = 100 ฐC
    FORWARD VOLTAGE, VOLTS
    REVERSE CURRENT,
    MICROAMPERES

    1.0

    0.1

    Ta = 25 ฐC

    0.01
    0 20 40 60 80 100 120 140

    PERCENT OF RATED REVERSE


    VOLTAGE, (%)

    Page 2 of 2 Rev. 02 : March 31, 2005

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