SF1601G thru SF1608G ®

SF1601G thru SF1608G Pb

Pb Free Plating Product
16.0 Ampere Glass Passivated Super Fast Recovery Rectifier Diodes

TO-220AB Unit : inch (mm)

Features
 Fast switching for high efficiency
.419(10.66) .196(5.00)
.387(9.85) .163(4.16)

 Low forward voltage drop .139(3.55)

MIN
.054(1.39)
.045(1.15)
 High current capability

.269(6.85)
.226(5.75)
 Low reverse leakage current

.624(15.87)
.548(13.93)
 High surge current capability
Application
 Automotive Environment|DC Motor Control
 Plating Power Supply|UPS
 Amplifier and Sound Device System

.50(12.7)MIN
.177(4.5)MAX
.038(0.96) .025(0.65)MAX

Mechanical Data
.019(0.50)

 Case: Molded plastic TO-220AB Heatsink

 Epoxy: UL 94V-0 rate flame retardant
.1(2.54) .1(2.54)

 Terminals: Solderable per MIL-STD-202

method 208 Case Case Case
 Polarity: As marked on diode body
Positive Negative Doubler
 Mounting position: Any Common Cathode Common Anode Series Connection
 Weight: 2.03 gram approximately Suffix "A" Suffix "D"

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

o
Rating at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Common Cathode SF1601G SF1602G SF1604G SF1605G SF1606G SF1608G
Common Anode Suffix "A" SYMBOL SF1601GA SF1602GA SF1604GA SF1605GA SF1606GA SF1608GA UNIT
Anode and Cathode Coexistence Suffix "D" SF1601GD SF1602GD SF1604GD SF1605GD SF1606GD SF1608GD

Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 300 400 600 V

Maximum RMS Voltage VRMS 35 70 140 210 280 420 V

Maximum DC Blocking Voltage VDC 50 100 200 300 400 600 V

Maximum Average Forward Rectified

o IF(AV) 16.0 A
Current TC=100 C

Peak Forward Surge Current, 8.3ms single

Half sine-wave superimposed on rated load IFSM 175 150 A
(JEDEC method)

Maximum Instantaneous Forward Voltage

VF 0.98 1.3 1.7 V
@ 8.0 A

Maximum DC Reverse Current @TJ=25 C

o
10.0 uA
o
IR
At Rated DC Blocking Voltage @TJ=125 C 250 uA

Maximum Reverse Recovery Time (Note 1) Trr 35 nS

Typical junction Capacitance (Note 2) CJ 90 pF

o
Typical Thermal Resistance (Note 3) R JC 2.2 CW
Operating Junction and Storage -55 to + 150 o
TJ, TSTG C
Temperature Range

NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
Page 1/2

© 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/

Free Datasheet http://www.datasheet4u.com/
 SF1601G thru SF1608G ®

FIG.1 - FORWARD CURRENT DERATING CURVE FIG.2 - MAXIMUM NON-REPETITIVE

PEAK FORWARD SURGE CURRENT

16 200
Pulse Width 8.3ms

PEAK FORWARD SURGE CURRENT,

Single Half-Sire-Wave
AVERAGE FORWARD RECTIFIED

175 (JEDEC Method)

13
CURRENT, AMPERES

150
10

AMPERES
125

8 100

75
6

50
4
60 Hz Resistive or 25
Inductive load
0 0
0 50 100 150 1 10 100

o NUMBER OF CYCLES AT 60Hz

CASE TEMPERATURE, C

FIG.3 - TYPICAL INSTANTANEOUS FIG.4 - TYPICAL REVERSE CHARACTERISTICS

FORWARD CHARACTERISTICS
10 1000
IINSTANTANEOUS FORWARD CURRENT,

INSTANTANEOUS REVERSE CURRENT,

SF1601G-SF1604G o
SF1605G-SF1606G TJ=125 C
100
MICROAMPERES

1.0
AMPERES

SF1608G 10

o
TJ=25 C
0.1
1

o
TJ=25 C
PULSE WIDTH=300uS
1% DUTY CYCLE
0.01 0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 20 40 60 80 100

INSTANTANEOUS FORWARD VOLTAGE, PERCENT OF RATED PEAK REVERSE VOLTAGE,%

VOLTS

FIG.5 - TYPICAL JUNCTION CAPACITANCE

1000 o
TJ = 25 C
f = 1.0 MHZ
Vsig = 50mVp-p
JUNCTION CAPACITANCE, pF

100

10
0.1 1.0 4.0 10 100

REVERSE VOLTAGE, VOLTS

Page 2/2

© 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/

Free Datasheet http://www.datasheet4u.com/