r5f2021 Micro Controlador
r5f2021 Micro Controlador
r5f2021 Micro Controlador
REJ03B0168-0210
SINGLE-CHIP 16-BIT CMOS MCU Rev.2.10
Sep 26, 2008
1. Overview
These MCUs are fabricated using a high-performance silicon gate CMOS process, embedding the R8C CPU core, and
are packaged in a 32-pin molded-plastic LQFP. It implements sophisticated instructions for a high level of instruction
efficiency. With 1 Mbyte of address space, they are capable of executing instructions at high speed.
Furthermore, the R8C/27 Group has on-chip data flash (1 KB × 2 blocks).
The difference between the R8C/26 Group and R8C/27 Group is only the presence or absence of data flash.
Their peripheral functions are the same.
1.1 Applications
Electronic household appliances, office equipment, audio equipment, consumer products, automotive, etc.
8 8 6 1 3 2
Peripheral functions
A/D converter System clock
(10 bits × 12 channels)
generation circuit
Timers
XIN-XOUT
Timer RA (8 bits) High-speed on-chip oscillator
Timer RB (8 bits) UART or Low-Speed on-chip oscillator
Timer RC clock synchronous serial I/O XCIN-XCOUT(3)
(16 bits × 1 channel) (8 bits × 2 channels)
Timer RE (8 bits)
LIN module
(1 channel)
Multiplier
NOTES:
1. ROM size varies with MCU type.
2. RAM size varies with MCU type.
3. XCIN, XCOUT can be used only for N or D version.
Table 1.3 Product Information for R8C/26 Group Current of Sep. 2008
ROM RAM
Part No. Package Type Remarks
Capacity Capacity
R5F21262SNFP 8 Kbytes 512 bytes PLQP0032GB-A N version
R5F21264SNFP 16 Kbytes 1 Kbyte PLQP0032GB-A
R5F21265SNFP 24 Kbytes 1.5 Kbytes PLQP0032GB-A
R5F21266SNFP 32 Kbytes 1.5 Kbytes PLQP0032GB-A
R5F21262SDFP 8 Kbytes 512 bytes PLQP0032GB-A D version
R5F21264SDFP 16 Kbytes 1 Kbyte PLQP0032GB-A
R5F21265SDFP 24 Kbytes 1.5 Kbytes PLQP0032GB-A
R5F21266SDFP 32 Kbytes 1.5 Kbytes PLQP0032GB-A
R5F21264JFP 16 Kbytes 1 Kbyte PLQP0032GB-A J version
R5F21266JFP 32 Kbytes 1.5 Kbytes PLQP0032GB-A
R5F21264KFP 16 Kbytes 1 Kbyte PLQP0032GB-A K version
R5F21266KFP 32 Kbytes 1.5 Kbytes PLQP0032GB-A
R5F21262SNXXXFP 8 Kbytes 512 bytes PLQP0032GB-A N version Factory
R5F21264SNXXXFP 16 Kbytes 1 Kbyte PLQP0032GB-A programming
R5F21265SNXXXFP 24 Kbytes 1.5 Kbytes PLQP0032GB-A product(1)
R5F21266SNXXXFP 32 Kbytes 1.5 Kbytes PLQP0032GB-A
R5F21262SDXXXFP 8 Kbytes 512 bytes PLQP0032GB-A D version
R5F21264SDXXXFP 16 Kbytes 1 Kbyte PLQP0032GB-A
R5F21265SDXXXFP 24 Kbytes 1.5 Kbytes PLQP0032GB-A
R5F21266SDXXXFP 32 Kbytes 1.5 Kbytes PLQP0032GB-A
R5F21264JXXXFP 16 Kbytes 1 Kbyte PLQP0032GB-A J version
R5F21266JXXXFP 32 Kbytes 1.5 Kbytes PLQP0032GB-A
R5F21264KXXXFP 16 Kbytes 1 Kbyte PLQP0032GB-A K version
R5F21266KXXXFP 32 Kbytes 1.5 Kbytes PLQP0032GB-A
NOTE:
1. The user ROM is programmed before shipment.
ROM number
Classification
N: Operating ambient temperature -20 to 85°C (N version)
D: Operating ambient temperature -40 to 85°C (D version)
J: Operating ambient temperature -40 to 85°C (J version)
K: Operating ambient temperature -40 to 125°C (K version)
ROM capacity
2: 8 KB
4: 16 KB
5: 24 KB
6: 32 KB
R8C/26 Group
R8C/2x Series
Memory type
F: Flash memory
Renesas MCU
Renesas semiconductor
Figure 1.2 Part Number, Memory Size, and Package of R8C/26 Group
Table 1.4 Product Information for R8C/27 Group Current of Sep. 2008
ROM Capacity
RAM
Part No. Program Package Type Remarks
Data flash Capacity
ROM
R5F21272SNFP 8 Kbytes 1 Kbyte × 2 512 bytes PLQP0032GB-A N version
R5F21274SNFP 16 Kbytes 1 Kbyte × 2 1 Kbyte PLQP0032GB-A
R5F21275SNFP 24 Kbytes 1 Kbyte × 2 1.5 Kbytes PLQP0032GB-A
R5F21276SNFP 32 Kbytes 1 Kbyte × 2 1.5 Kbytes PLQP0032GB-A
R5F21272SDFP 8 Kbytes 1 Kbyte × 2 512 bytes PLQP0032GB-A D version
R5F21274SDFP 16 Kbytes 1 Kbyte × 2 1 Kbyte PLQP0032GB-A
R5F21275SDFP 24 Kbytes 1 Kbyte × 2 1.5 Kbytes PLQP0032GB-A
R5F21276SDFP 32 Kbytes 1 Kbyte × 2 1.5 Kbytes PLQP0032GB-A
R5F21274JFP 16 Kbytes 1 Kbyte × 2 1 Kbyte PLQP0032GB-A J version
R5F21276JFP 32 Kbytes 1 Kbyte × 2 1.5 Kbytes PLQP0032GB-A
R5F21274KFP 16 Kbytes 1 Kbyte × 2 1 Kbyte PLQP0032GB-A K version
R5F21276KFP 32 Kbytes 1 Kbyte × 2 1.5 Kbytes PLQP0032GB-A
R5F21272SNXXXFP 8 Kbytes 1 Kbyte × 2 512 bytes PLQP0032GB-A N version Factory
R5F21274SNXXXFP 16 Kbytes 1 Kbyte × 2 1 Kbyte PLQP0032GB-A programming
R5F21275SNXXXFP 24 Kbytes 1 Kbyte × 2 1.5 Kbytes PLQP0032GB-A product(1)
R5F21276SNXXXFP 32 Kbytes 1 Kbyte × 2 1.5 Kbytes PLQP0032GB-A
R5F21272SDXXXFP 8 Kbytes 1 Kbyte × 2 512 bytes PLQP0032GB-A D version
R5F21274SDXXXFP 16 Kbytes 1 Kbyte × 2 1 Kbyte PLQP0032GB-A
R5F21275SDXXXFP 24 Kbytes 1 Kbyte × 2 1.5 Kbytes PLQP0032GB-A
R5F21276SDXXXFP 32 Kbytes 1 Kbyte × 2 1.5 Kbytes PLQP0032GB-A
R5F21274JXXXFP 16 Kbytes 1 Kbyte × 2 1 Kbyte PLQP0032GB-A J version
R5F21276JXXXFP 32 Kbytes 1 Kbyte × 2 1.5 Kbytes PLQP0032GB-A
R5F21274KXXXFP 16 Kbytes 1 Kbyte × 2 1 Kbyte PLQP0032GB-A K version
R5F21276KXXXFP 32 Kbytes 1 Kbyte × 2 1.5 Kbytes PLQP0032GB-A
NOTE:
1. The user ROM is programmed before shipment.
ROM number
Classification
N: Operating ambient temperature -20 to 85°C (N version)
D: Operating ambient temperature -40 to 85°C (D version)
J: Operating ambient temperature -40 to 85°C (J version)
K: Operating ambient temperature -40 to 125°C (K version)
ROM capacity
2: 8 KB
4: 16 KB
5: 24 KB
6: 32 KB
R8C/27 Group
R8C/2x Series
Memory type
F: Flash memory
Renesas MCU
Renesas semiconductor
Figure 1.3 Part Number, Memory Size, and Package of R8C/27 Group
P1_1/KI1/AN9/TRCIOA/TRCTRG
P3_4/SDA/SCS/(TRCIOC)(2)
P1_2/KI2/AN10/TRCIOB
P3_3/INT3/SSI/TRCCLK
P1_3/KI3/AN11/(TRBO)
P1_0/KI0/AN8
VREF/P4_2
P1_4/TXD0
24 23 22 21 20 19 18 17
P0_7/AN0 25 16 P1_5/RXD0/(TRAIO)/(INT1)(2)
P0_6/AN1 26 15 P1_6/CLK0/(SSI)(2)
P0_5/AN2/CLK1 27 14 P5_3/TRCIOC
R8C/26 Group P5_4/TRCIOD
P0_4/AN3/TREO 28 13
P0_3/AN4 29
R8C/27 Group 12 P3_1/TRBO
P0_2/AN5 30 11 P3_6/(TXD1)/(RXD1)/(INT1)(2)
PLQP0032GB-A
P0_1/AN6 31 (32P6U-A) 10 P1_7/TRAIO/INT1
P0_0/AN7/(TXD1)(2) 32 (top view) 9 P4_5/INT0/(RXD1)(2)
1 2 3 4 5 6 7 8
MODE
P3_5/SCL/SSCK/(TRCIOD)(2)
P3_7/TRAO/SSO/RXD1/(TXD1)(2)
XOUT/XCOUT/P4_7 (1, 3)
XIN/XCIN/P4_6 (3)
VSS/AVSS
VCC/AVCC
RESET
NOTES:
1. P4_7 is an input-only port.
2. Can be assigned to the pin in parentheses by a program.
3. XCIN, XCOUT can be used only for N or D version.
4. Confirm the pin 1 position on the package by referring to the package dimensions.
XCIN clock input XCIN I These pins are provided for XCIN clock generation circuit I/O.
(N, D version) Connect a crystal oscillator between the XCIN and XCOUT
XCIN clock output XCOUT O pins. To use an external clock, input it to the XCIN pin and
(N, D version) leave the XCOUT pin open.
INT interrupt input INT0, INT1, INT3 I INT interrupt input pins
Key input interrupt KI0 to KI3 I Key input interrupt input pins
Timer RA TRAO O Timer RA output pin
TRAIO I/O Timer RA I/O pin
Timer RB TRBO O Timer RB output pin
Timer RC TRCCLK I External clock input pin
TRCTRG I External trigger input pin
TRCIOA, TRCIOB, I/O Sharing output-compare output / input-capture input / PWM /
TRCIOC, TRCIOD PWM2 output pins
Timer RE TREO O Timer RE output pin
Serial interface CLK0, CLK1 I/O Clock I/O pin
RXD0, RXD1 I Receive data input pin
TXD0, TXD1 O Transmit data output pin
I2C bus interface SCL I/O Clock I/O pin
SDA I/O Data I/O pin
Clock synchronous SSI I/O Data I/O pin
serial I/O with chip SCS I/O Chip-select signal I/O pin
select
SSCK I/O Clock I/O pin
SSO I/O Data I/O pin
Reference voltage VREF I Reference voltage input pin to A/D converter
input
A/D converter AN0 to AN11 I Analog input pins to A/D converter
I/O port P0_0 to P0_7, I/O CMOS I/O ports. Each port has an I/O select direction register,
P1_0 to P1_7, allowing each pin in the port to be directed for input or output
P3_1, P3_3 to individually.
P3_7, Any port set to input can be set to use a pull-up resistor or not
P4_5, by a program.
P5_3, P5_4 P1_0 to P1_7 also function as LED drive ports (N, D version).
Input port P4_2, P4_6, P4_7 I Input-only ports
I: Input O: Output I/O: Input and output
b19 b15 b0
PC Program counter
b15 b0
USP User stack pointer
b15 b0
b15 b8 b7 b0
IPL U I O B S Z D C
Carry flag
Debug flag
Zero flag
Sign flag
Register bank select flag
Overflow flag
Interrupt enable flag
Stack pointer select flag
Reserved bit
Processor interrupt priority level
Reserved bit
NOTE:
1. These registers comprise a register bank. There are two register banks.
2.6 User Stack Pointer (USP) and Interrupt Stack Pointer (ISP)
The stack pointers (SP), USP, and ISP, are each 16 bits wide. The U flag of FLG is used to switch between
USP and ISP.
3. Memory
00000h
SFR
(Refer to 4. Special
Function Registers
(SFRs))
002FFh
00400h
Internal RAM
0XXXh
0FFDCh
Undefined instruction
Overflow
BRK instruction
Address match
Single step
0YYYYh Watchdog timer/oscillation stop detection/voltage monitor
FFFFFh
NOTE:
1. The blank regions are reserved. Do not access locations in these regions.
00000h
SFR
(Refer to 4. Special
Function Registers
(SFRs))
002FFh
00400h
Internal RAM
0XXXXh
02400h
Internal ROM 0FFDCh
Undefined instruction
(data flash)(1) Overflow
02BFFh BRK instruction
Address match
Single step
0YYYYh Watchdog timer/oscillation stop detection/voltage monitor
FFFFFh
NOTES:
1. Data flash block A (1 Kbyte) and B (1 Kbyte) are shown.
2. The blank regions are reserved. Do not access locations in these regions.
Internal ROM Internal RAM
Part Number
Size Address 0YYYYh Size Address 0XXXXh
R5F21272SNFP, R5F21272SDFP,
8 Kbytes 0E000h 512 bytes 005FFh
R5F21272SNXXXFP, R5F21272SDXXXFP
R5F21274SNFP, R5F21274SDFP,
R5F21274JFP, R5F21274KFP,
16 Kbytes 0C000h 1 Kbyte 007FFh
R5F21274SNXXXFP, R5F21274SDXXXFP,
R5F21274JXXXFP, R5F21274KXXXFP
R5F21275SNFP, R5F21275SDFP,
24 Kbytes 0A000h 1.5 Kbytes 009FFh
R5F21275SNXXXFP, R5F21275SDXXXFP
R5F21276SNFP, R5F21276SDFP,
R5F21276JFP, R5F21276KFP,
32 Kbytes 08000h 1.5 Kbytes 009FFh
R5F21276SNXXXFP, R5F21276SDXXXFP,
R5F21276JXXXFP, R5F21276KXXXFP
003Fh
0040h
0041h
0042h
0043h
0044h
0045h
0046h
0047h Timer RC Interrupt Control Register TRCIC XXXXX000b
0048h
0049h
004Ah Timer RE Interrupt Control Register TREIC XXXXX000b
004Bh
004Ch
004Dh Key Input Interrupt Control Register KUPIC XXXXX000b
004Eh A/D Conversion Interrupt Control Register ADIC XXXXX000b
004Fh SSU/IIC bus Interrupt Control Register(9) SSUIC/IICIC XXXXX000b
0050h
0051h UART0 Transmit Interrupt Control Register S0TIC XXXXX000b
0052h UART0 Receive Interrupt Control Register S0RIC XXXXX000b
0053h UART1 Transmit Interrupt Control Register S1TIC XXXXX000b
0054h UART1 Receive Interrupt Control Register S1RIC XXXXX000b
0055h
0056h Timer RA Interrupt Control Register TRAIC XXXXX000b
0057h
0058h Timer RB Interrupt Control Register TRBIC XXXXX000b
0059h INT1 Interrupt Control Register INT1IC XX00X000b
005Ah INT3 Interrupt Control Register INT3IC XX00X000b
005Bh
005Ch
005Dh INT0 Interrupt Control Register INT0IC XX00X000b
005Eh
005Fh
0060h
006Fh
0070h
007Fh
X: Undefined
NOTES:
1. The blank regions are reserved. Do not access locations in these regions.
2. (N, D version) Software reset, watchdog timer reset, voltage monitor 1 reset, or voltage monitor 2 reset do not affect this register.
(J, K version) Software reset, watchdog timer reset, or voltage monitor 2 reset do not affect this register.
3. The LVD0ON bit in the OFS register is set to 1 and hardware reset.
4. Power-on reset, voltage monitor 0 reset or the LVD0ON bit in the OFS register is set to 0, and hardware reset.
5. (N, D version) Software reset, watchdog timer reset, voltage monitor 1 reset, or voltage monitor 2 reset do not affect b2 and b3.
(J, K version) Software reset, watchdog timer reset, or voltage monitor 2 reset do not affect b2 and b3.
6. (N, D version) Software reset, watchdog timer reset, voltage monitor 1 reset, or voltage monitor 2 reset do not affect this register.
(J, K version) These regions are reserved. Do not access locations in these regions.
7. The LVD1ON bit in the OFS register is set to 1 and hardware reset.
8. Power-on reset, voltage monitor 1 reset, or the LVD1ON bit in the OFS register is set to 0 and hardware reset.
9. Selected by the IICSEL bit in the PMR register.
5. Electrical Characteristics
5.1 N, D Version
P0
P1
30pF
P3
P4
P5
Table 5.5 Flash Memory (Data flash Block A, Block B) Electrical Characteristics(4)
Standard
Symbol Parameter Conditions Unit
Min. Typ. Max.
− Program/erase endurance(2) 10,000(3) − − times
− Byte program time − 50 400 µs
(program/erase endurance ≤ 1,000 times)
− Byte program time − 65 − µs
(program/erase endurance > 1,000 times)
− Block erase time − 0.2 9 s
(program/erase endurance ≤ 1,000 times)
− Block erase time − 0.3 − s
(program/erase endurance > 1,000 times)
td(SR-SUS) Time delay from suspend request until − − 97 + CPU clock µs
suspend × 6 cycles
− Interval from erase start/restart until 650 − − µs
following suspend request
− Interval from program start/restart until 0 − − ns
following suspend request
− Time from suspend until program/erase − − 3 + CPU clock µs
restart × 4 cycles
− Program, erase voltage 2.7 − 5.5 V
− Read voltage 2.2 − 5.5 V
− Program, erase temperature -20(8) − 85 °C
− Data hold time(9) Ambient temperature = 55°C 20 − − year
NOTES:
1. VCC = 2.7 to 5.5 V at Topr = -20 to 85°C (N version) / -40 to 85°C (D version), unless otherwise specified.
2. Definition of programming/erasure endurance
The programming and erasure endurance is defined on a per-block basis.
If the programming and erasure endurance is n (n = 10,000), each block can be erased n times. For example, if 1,024 1-byte
writes are performed to different addresses in block A, a 1 Kbyte block, and then the block is erased, the
programming/erasure endurance still stands at one.
However, the same address must not be programmed more than once per erase operation (overwriting prohibited).
3. Endurance to guarantee all electrical characteristics after program and erase. (1 to Min. value can be guaranteed).
4. Standard of block A and block B when program and erase endurance exceeds 1,000 times. Byte program time to 1,000 times
is the same as that in program ROM.
5. In a system that executes multiple programming operations, the actual erasure count can be reduced by writing to sequential
addresses in turn so that as much of the block as possible is used up before performing an erase operation. For example,
when programming groups of 16 bytes, the effective number of rewrites can be minimized by programming up to 128 groups
before erasing them all in one operation. In addition, averaging the erasure endurance between blocks A and B can further
reduce the actual erasure endurance. It is also advisable to retain data on the erasure endurance of each block and limit the
number of erase operations to a certain number.
6. If an error occurs during block erase, attempt to execute the clear status register command, then execute the block erase
command at least three times until the erase error does not occur.
7. Customers desiring program/erase failure rate information should contact their Renesas technical support representative.
8. -40°C for D version.
9. The data hold time includes time that the power supply is off or the clock is not supplied.
Suspend request
(maskable interrupt request)
FMR46
Clock-dependent
Fixed time time
Access restart
td(SR-SUS)
Table 5.9 Power-on Reset Circuit, Voltage Monitor 0 Reset Electrical Characteristics(3)
Standard
Symbol Parameter Condition Unit
Min. Typ. Max.
Vpor1 Power-on reset valid voltage(4) − − 0.1 V
Vpor2 Power-on reset or voltage monitor 0 reset valid 0 − Vdet0 V
voltage
trth External power VCC rise gradient(2) 20 − − mV/msec
NOTES:
1. The measurement condition is Topr = -20 to 85°C (N version) / -40 to 85°C (D version), unless otherwise specified.
2. This condition (external power VCC rise gradient) does not apply if VCC ≥ 1.0 V.
3. To use the power-on reset function, enable voltage monitor 0 reset by setting the LVD0ON bit in the OFS register to 0, the
VW0C0 and VW0C6 bits in the VW0C register to 1 respectively, and the VCA25 bit in the VCA2 register to 1.
4. tw(por1) indicates the duration the external power VCC must be held below the effective voltage (Vpor1) to enable a power on
reset. When turning on the power for the first time, maintain tw(por1) for 30 s or more if -20°C ≤ Topr ≤ 85°C, maintain tw(por1) for
3,000 s or more if -40°C ≤ Topr < -20°C.
Vdet0(3) Vdet0(3)
2.2 V trth
External trth
Power VCC
Vpor2
Vpor1
tw(por1) Sampling time(1, 2)
Internal
reset signal
(“L” valid)
1 1
× 32 × 32
fOCO-S fOCO-S
NOTES:
1. When using the voltage monitor 0 digital filter, ensure that the voltage is within the MCU operation voltage
range (2.2 V or above) during the sampling time.
2. The sampling clock can be selected. Refer to 6. Voltage Detection Circuit of Hardware Manual for details.
3. Vdet0 indicates the voltage detection level of the voltage detection 0 circuit. Refer to 6. Voltage Detection
Circuit of Hardware Manual for details.
Table 5.13 Timing Requirements of Clock Synchronous Serial I/O with Chip Select(1)
Standard Unit
Symbol Parameter Conditions
Min. Typ. Max.
tSUCYC SSCK clock cycle time 4 − − tCYC(2)
tHI SSCK clock “H” width 0.4 − 0.6 tSUCYC
tLO SSCK clock “L” width 0.4 − 0.6 tSUCYC
tRISE SSCK clock rising Master − − 1 tCYC(2)
time Slave − − 1 µs
tFALL SSCK clock falling Master − − 1 tCYC(2)
time Slave − − 1 µs
tSU SSO, SSI data input setup time 100 − − ns
tH SSO, SSI data input hold time 1 − − tCYC(2)
tLEAD SCS setup time Slave 1tCYC + 50 − − ns
tLAG SCS hold time Slave 1tCYC + 50 − − ns
tOD SSO, SSI data output delay time − − 1 tCYC(2)
tSA SSI slave access time 2.7 V ≤ VCC ≤ 5.5 V − − 1.5tCYC + 100 ns
2.2 V ≤ VCC < 2.7 V − − 1.5tCYC + 200 ns
tOR SSI slave out open time 2.7 V ≤ VCC ≤ 5.5 V − − 1.5tCYC + 100 ns
2.2 V ≤ VCC < 2.7 V − − 1.5tCYC + 200 ns
NOTES:
1. VCC = 2.2 to 5.5 V, VSS = 0 V at Topr = -20 to 85°C (N version) / -40 to 85°C (D version), unless otherwise specified.
2. 1tCYC = 1/f1(s)
VIH or VOH
SCS (output)
VIH or VOH
SSCK (output)
(CPOS = 1)
tLO
tHI
SSCK (output)
(CPOS = 0)
tLO tSUCYC
SSO (output)
tOD
SSI (input)
tSU tH
VIH or VOH
SCS (output)
VIH or VOH
SSCK (output)
(CPOS = 1)
tLO
tHI
SSCK (output)
(CPOS = 0)
tLO tSUCYC
SSO (output)
tOD
SSI (input)
tSU tH
Figure 5.4 I/O Timing of Clock Synchronous Serial I/O with Chip Select (Master)
VIH or VOH
SCS (input)
VIH or VOH
SSCK (input)
(CPOS = 1)
tLO
tHI
SSCK (input)
(CPOS = 0)
tLO tSUCYC
SSO (input)
tSU tH
SSI (output)
tSA tOD tOR
VIH or VOH
SSCK (input)
(CPOS = 1)
tLO
tHI
SSCK (input)
(CPOS = 0)
tLO tSUCYC
SSO (input)
tSU tH
SSI (output)
Figure 5.5 I/O Timing of Clock Synchronous Serial I/O with Chip Select (Slave)
tHI
VIH or VOH
SSCK
VIH or VOH
tLO tSUCYC
SSO (output)
tOD
SSI (input)
tSU tH
Figure 5.6 I/O Timing of Clock Synchronous Serial I/O with Chip Select (Clock Synchronous
Communication Mode)
VIH
SDA
VIL
tBUF
tSTAH tSCLH tSP tSTOP
tSTAS
SCL
P(2) S(1) Sr(3) P(2)
tSCLL
tsf tsr tSDAS
tSCL
tSDAH
NOTES:
1. Start condition
2. Stop condition
3. Retransmit start condition
Timing Requirements
(Unless Otherwise Specified: VCC = 5 V, VSS = 0 V at Topr = 25°C) [VCC = 5 V]
tC(XIN) VCC = 5 V
tWH(XIN)
XIN input
tWL(XIN)
Figure 5.8 XIN Input and XCIN Input Timing Diagram when VCC = 5 V
tC(TRAIO) VCC = 5 V
tWH(TRAIO)
TRAIO input
tWL(TRAIO)
tC(CK) VCC = 5 V
tW(CKH)
CLKi
tW(CKL)
th(C-Q)
TXDi
td(C-Q) tsu(D-C) th(C-D)
RXDi
i = 0 or 1
VCC = 5 V
tW(INL)
INTi input
tW(INH)
i = 0, 1, 3
Figure 5.11 External Interrupt INTi Input Timing Diagram when VCC = 5 V
Timing requirements
(Unless Otherwise Specified: VCC = 3 V, VSS = 0 V at Topr = 25°C) [VCC = 3 V]
tC(XIN) VCC = 3 V
tWH(XIN)
XIN input
tWL(XIN)
Figure 5.12 XIN Input and XCIN Input Timing Diagram when VCC = 3 V
tC(TRAIO) VCC = 3 V
tWH(TRAIO)
TRAIO input
tWL(TRAIO)
tC(CK) VCC = 3 V
tW(CKH)
CLKi
tW(CKL)
th(C-Q)
TXDi
RXDi
i = 0 or 1
VCC = 3 V
tW(INL)
INTi input
tW(INH)
i = 0, 1, 3
Figure 5.15 External Interrupt INTi Input Timing Diagram when VCC = 3 V
Timing requirements
(Unless Otherwise Specified: VCC = 2.2 V, VSS = 0 V at Topr = 25°C) [VCC = 2.2 V]
XIN input
tWL(XIN)
Figure 5.16 XIN Input and XCIN Input Timing Diagram when VCC = 2.2 V
TRAIO input
tWL(TRAIO)
CLKi
tW(CKL)
th(C-Q)
TXDi
RXDi
i = 0 or 1
VCC = 2.2 V
tW(INL)
INTi input
tW(INH)
i = 0, 1, 3
Figure 5.19 External Interrupt INTi Input Timing Diagram when VCC = 2.2 V
5.2 J, K Version
P0
P1
30pF
P3
P4
P5
Table 5.38 Flash Memory (Data flash Block A, Block B) Electrical Characteristics(4)
Standard
Symbol Parameter Conditions Unit
Min. Typ. Max.
− Program/erase endurance(2) 10,000(3) − − times
− Byte program time − 50 400 µs
(program/erase endurance ≤ 1,000 times)
− Byte program time − 65 − µs
(program/erase endurance > 1,000 times)
− Block erase time − 0.2 9 s
(program/erase endurance ≤ 1,000 times)
− Block erase time − 0.3 − s
(program/erase endurance > 1,000 times)
td(SR-SUS) Time delay from suspend request until − − 97 + CPU clock µs
suspend × 6 cycles
− Interval from erase start/restart until 650 − − µs
following suspend request
− Interval from program start/restart until 0 − − ns
following suspend request
− Time from suspend until program/erase − − 3 + CPU clock µs
restart × 4 cycles
− Program, erase voltage 2.7 − 5.5 V
− Read voltage 2.7 − 5.5 V
− Program, erase temperature -40 − 85(8) °C
− Data hold time(9) Ambient temperature = 55°C 20 − − year
NOTES:
1. VCC = 2.7 to 5.5 V at Topr = -40 to 85°C (J version) / -40 to 125°C (K version), unless otherwise specified.
2. Definition of programming/erasure endurance
The programming and erasure endurance is defined on a per-block basis.
If the programming and erasure endurance is n (n = 10,000), each block can be erased n times. For example, if 1,024 1-byte
writes are performed to different addresses in block A, a 1 Kbyte block, and then the block is erased, the
programming/erasure endurance still stands at one.
However, the same address must not be programmed more than once per erase operation (overwriting prohibited).
3. Endurance to guarantee all electrical characteristics after program and erase. (1 to Min. value can be guaranteed).
4. Standard of block A and block B when program and erase endurance exceeds 1,000 times. Byte program time to 1,000 times
is the same as that in program ROM.
5. In a system that executes multiple programming operations, the actual erasure count can be reduced by writing to sequential
addresses in turn so that as much of the block as possible is used up before performing an erase operation. For example,
when programming groups of 16 bytes, the effective number of rewrites can be minimized by programming up to 128 groups
before erasing them all in one operation. In addition, averaging the erasure endurance between blocks A and B can further
reduce the actual erasure endurance. It is also advisable to retain data on the erasure endurance of each block and limit the
number of erase operations to a certain number.
6. If an error occurs during block erase, attempt to execute the clear status register command, then execute the block erase
command at least three times until the erase error does not occur.
7. Customers desiring program/erase failure rate information should contact their Renesas technical support representative.
8. 125°C for K version.
9. The data hold time includes time that the power supply is off or the clock is not supplied.
Suspend request
(maskable interrupt request)
FMR46
Clock-dependent
Fixed time time
Access restart
td(SR-SUS)
Table 5.41 Power-on Reset Circuit, Voltage Monitor 1 Reset Electrical Characteristics(3)
Standard
Symbol Parameter Condition Unit
Min. Typ. Max.
Vpor1 Power-on reset valid voltage(4) − − 0.1 V
Vpor2 Power-on reset or voltage monitor 1 reset valid 0 − Vdet1 V
voltage
trth External power VCC rise gradient VCC ≤ 3.6 V 20(2) − − mV/msec
VCC > 3.6 V 20(2) − 2,000 mV/msec
NOTES:
1. The measurement condition is Topr = -40 to 85°C (J version) / -40 to 125°C (K version), unless otherwise specified.
2. This condition (the minimum value of external power VCC rise gradient) does not apply if Vpor2 ≥ 1.0 V.
3. To use the power-on reset function, enable voltage monitor 1 reset by setting the LVD1ON bit in the OFS register to 0, the
VW1C0 and VW1C6 bits in the VW1C register to 1 respectively, and the VCA26 bit in the VCA2 register to 1.
4. tw(por1) indicates the duration the external power VCC must be held below the effective voltage (Vpor1) to enable a power on
reset. When turning on the power for the first time, maintain tw(por1) for 30 s or more if -20°C ≤ Topr ≤ 125°C, maintain tw(por1) for
3,000 s or more if -40°C ≤ Topr < -20°C.
Vdet1(3) Vdet1(3)
trth trth
2.0 V
External
power VCC td(Vdet1-A)
Vpor2
Vpor1
tw(por1)
Sampling time(1, 2)
Internal reset
signal
(“L” valid)
1 1
× 32 × 32
fOCO-S fOCO-S
NOTES:
1. When using the voltage monitor 1 digital filter, ensure VCC is 2.0 V or higher during the sampling time.
2. The sampling clock can be selected. Refer to 6. Voltage Detection Circuit of Hardware Manual for details.
3. Vdet1 indicates the voltage detection level of the voltage detection 1 circuit. Refer to 6. Voltage Detection
Circuit of Hardware Manual for details.
Table 5.45 Timing Requirements of Clock Synchronous Serial I/O with Chip Select(1)
Standard Unit
Symbol Parameter Conditions
Min. Typ. Max.
tSUCYC SSCK clock cycle time 4 − − tCYC(2)
tHI SSCK clock “H” width 0.4 − 0.6 tSUCYC
tLO SSCK clock “L” width 0.4 − 0.6 tSUCYC
tRISE SSCK clock rising Master − − 1 tCYC(2)
time Slave − − 1 µs
tFALL SSCK clock falling Master − − 1 tCYC(2)
time Slave − − 1 µs
tSU SSO, SSI data input setup time 100 − − ns
tH SSO, SSI data input hold time 1 − − tCYC(2)
tLEAD SCS setup time Slave 1tCYC + 50 − − ns
tLAG SCS hold time Slave 1tCYC + 50 − − ns
tOD SSO, SSI data output delay time − − 1 tCYC(2)
tSA SSI slave access time − − 1.5tCYC + 100 ns
tOR SSI slave out open time − − 1.5tCYC + 100 ns
NOTES:
1. VCC = 2.7 to 5.5 V, VSS = 0 V at Topr = -40 to 85°C (J version) / -40 to 125°C (K version), unless otherwise specified.
2. 1tCYC = 1/f1(s)
VIH or VOH
SCS (output)
VIH or VOH
SSCK (output)
(CPOS = 1)
tLO
tHI
SSCK (output)
(CPOS = 0)
tLO tSUCYC
SSO (output)
tOD
SSI (input)
tSU tH
VIH or VOH
SCS (output)
VIH or VOH
SSCK (output)
(CPOS = 1)
tLO
tHI
SSCK (output)
(CPOS = 0)
tLO tSUCYC
SSO (output)
tOD
SSI (input)
tSU tH
Figure 5.23 I/O Timing of Clock Synchronous Serial I/O with Chip Select (Master)
VIH or VOH
SCS (input)
VIH or VOH
SSCK (input)
(CPOS = 1)
tLO
tHI
SSCK (input)
(CPOS = 0)
tLO tSUCYC
SSO (input)
tSU tH
SSI (output)
tSA tOD tOR
VIH or VOH
SSCK (input)
(CPOS = 1)
tLO
tHI
SSCK (input)
(CPOS = 0)
tLO tSUCYC
SSO (input)
tSU tH
SSI (output)
Figure 5.24 I/O Timing of Clock Synchronous Serial I/O with Chip Select (Slave)
tHI
VIH or VOH
SSCK
VIH or VOH
tLO tSUCYC
SSO (output)
tOD
SSI (input)
tSU tH
Figure 5.25 I/O Timing of Clock Synchronous Serial I/O with Chip Select (Clock Synchronous
Communication Mode)
VIH
SDA
VIL
tBUF
tSTAH tSCLH tSP tSTOP
tSTAS
SCL
P(2) S(1) Sr(3) P(2)
tSCLL
tsf tsr tSDAS
tSCL
tSDAH
NOTES:
1. Start condition
2. Stop condition
3. Retransmit start condition
Timing Requirements
(Unless Otherwise Specified: VCC = 5 V, VSS = 0 V at Topr = 25°C) [VCC = 5 V]
tC(XIN) VCC = 5 V
tWH(XIN)
XIN input
tWL(XIN)
tC(TRAIO) VCC = 5 V
tWH(TRAIO)
TRAIO input
tWL(TRAIO)
tC(CK) VCC = 5 V
tW(CKH)
CLKi
tW(CKL)
th(C-Q)
TXDi
td(C-Q) tsu(D-C) th(C-D)
RXDi
i = 0 or 1
VCC = 5 V
tW(INL)
INTi input
tW(INH)
i = 0, 1, 3
Figure 5.30 External Interrupt INTi Input Timing Diagram when VCC = 5 V
Timing requirements
(Unless Otherwise Specified: VCC = 3 V, VSS = 0 V at Topr = 25°C) [VCC = 3 V]
tC(XIN) VCC = 3 V
tWH(XIN)
XIN input
tWL(XIN)
tC(TRAIO) VCC = 3 V
tWH(TRAIO)
TRAIO input
tWL(TRAIO)
tC(CK) VCC = 3 V
tW(CKH)
CLKi
tW(CKL)
th(C-Q)
TXDi
RXDi
i = 0 or 1
VCC = 3 V
tW(INL)
INTi input
tW(INH)
i = 0, 1, 3
Figure 5.34 External Interrupt INTi Input Timing Diagram when VCC = 3 V
Package Dimensions
Diagrams showing the latest package dimensions and mounting information are available in the “Packages” section of
the Renesas Technology website.
HD
*1
D
24 17
NOTE)
1. DIMENSIONS "*1" AND "*2"
DO NOT INCLUDE MOLD FLASH.
16 2. DIMENSION "*3" DOES NOT
25
INCLUDE TRIM OFFSET.
bp
b1
HE
E
c1
c
*2
c
b1 0.35
c 0.09 0.145 0.20
c1 0.125
A1
L
L1 0° 8°
e 0.8
Detail F
y
*3 x 0.20
e bp
x y 0.10
ZD 0.7
ZE 0.7
L 0.3 0.5 0.7
L1 1.0
Description
Rev. Date
Page Summary
0.10 Nov 14, 2005 − First edition issued
0.20 Feb 06, 2006 2, 3 Table 1.1 Functions and Specifications for R8C/26Group and Table 1.2
Functions and Specifications for R8C/27 Group;
Minimum instruction execution time and Supply voltage revised
9 Table 1.6 Pin Name Information by Pin Number;
“XOUT” → “XOUT/XCOUT” and “XIN” → “XIN/XCIN” revised
18 Table 4.4 SFR Information (4);
00FEh: “DRR” → “P1DRR” revised
19 Table 4.5 SFR Information (5);
-0119h: “Timer RE Minute Data Register / Compare Register” →
“Timer RE Minute Data Register / Compare Data Register”
-011Ah: “Timer RE Time Data Register” →
“Timer RE Hour Data Register”
-011Bh: “Timer RE Day Data Register” →
“Timer RE Day of Week Data Register” revised
22 to 45 5. Electrical Characteristics added
1.00 Nov 08, 2006 All pages “Preliminary” deleted
2 Table 1.1 revised
3 Table 1.2 revised
4 Figure 1.1 revised
5 Table 1.3 revised
6 Table 1.4 revised
7 Figure 1.4 revised
9 Table 1.6 revised
15 Table 4.1;
• 001Ch: “00h” → “00h, 10000000b” revised
• 000Fh: “000XXXXXb” → “00X11111b” revised
• 0029h: “High-Speed On-Chip Oscillator Control Register 4, FRA4,
When shipping” added
• 002Bh: “High-Speed On-Chip Oscillator Control Register 6, FRA6,
When shipping” added
• 0032h: “00h, 01000000b” → “00h, 00100000b” revised
• 0038h: “00001000b, 01001001b” → “0000X000b, 0100X001b” revised
• NOTE3 and 4 revised; NOTE6 added
18 Table 4.4;
• 00E0h, 00E1h, 00E5h, 00E8h, 00E9h: “XXh” → “00h” revised
• 00FDh: “XX00000000b” → “00h” revised
22 Table 5.2 revised
23 Figure 5.1 title revised
24 Table 5.4 revised
25 Table 5.5 revised
26 Figure 5.2 title revised and Table 5.7 NOTE4 added
A-1
REVISION HISTORY R8C/26 Group, R8C/27 Group Datasheet
Description
Rev. Date
Page Summary
1.00 Nov 08, 2006 27 Table 5.9, Figure 5.3 revised and Table 5.10 deleted
28 Table 5.10, Table 5.11 revised
34 Table 5.15 revised
35 Table 5.16 revised
36 Table 5.17 revised
39 Table 5.22 revised
40 Table 5.23 revised
44 Table 5.29 revised
47 Package Dimensions; “Diagrams showing the latest...website.” added
1.10 Nov 29, 2006 All pages “J, K version” added
1 1 “J and K versions are under development...notice.” added
1.1 revised
2 Table 1.1 revised
3 Table 1.2 revised
4 Figure 1.1 NOTE3 added
5 Table 1.3, Figure 1.2 revised
6 Table 1.4, Figure 1.3 revised
7 Figure 1.4 NOTE3 added
8 Table 1.5 revised
9 Table 1.6 NOTE2 added
13 Figure 3.1 revised
14 Figure 3.2 revised
15 Table 4.1; “0000h to 003Fh” → “0000h to 002Fh” revised
• NOTE3 added
16 Table 4.2; “0040h to 007Fh” → “0030h to 007Fh” revised
• 0032h, 0036h: “After reset” is revised
• 0038h: NOTE revised
• NOTES 2, 5, 6 revised and NOTE 7, 8 added
19 Table 4.5 NOTE2 added
28 Table 5.10 revised
48 to 66 5.2 J, K Version added
1.20 Jan 17, 2007 18 Table 4.4 NOTE2 added
1.30 May 25, 2007 2 Table 1.1 revised
3 Table 1.2 revised
5 Table 1.3 revised
6 Figure 1.2 revised
7 Table 1.4 revised
8 Figure 1.3 revised
9 Figure 1.4 NOTE4 added
15 Figure 3.1 part number revised
A-2
REVISION HISTORY R8C/26 Group, R8C/27 Group Datasheet
Description
Rev. Date
Page Summary
1.30 May 25, 2007 16 Figure 3.2 part number revised
30 Table 5.10 revised
53 Table 5.39 NOTE4 added
55 Table 5.42 revised
1.40a Jun 14, 2007 5, 7 Table 1.3 and Table 1.4 revised
2.00 Mar 01, 2008 1, 49 1.1, 5.2 “J and K versions are ...” deleted
5, 7 Table 1.3, Table 1.4 revised
11 Table 1.6 NOTE3 added
15, 16 Figure 3.1, Figure 3.2; “Expanded area” deleted
17 Table 4.1 “002Ch” added
18 Table 4.2 “0036h”; J, K version “0100X000b” → “0100X001b”
24, 49 Table 5.2, Table 5.35; NOTE2 revised
30 Table 5.10 revised, NOTE4 added
2.10 Sep 26, 2008 − “RENESAS TECHNICAL UP DATE” reflected: TN-16C-A172A/E
26, 51 Table 5.4, Table 5.37 NOTE2, NOTE4 revised
27, 52 Table 5.5, Table 5.38 NOTE2, NOTE5 revised
53 Table 5.39 Parameter: Voltage monitor 1 reset generation time added
NOTE5 added
Table 5.40 revised
54 Table 5.41 revised
Figure 5.22 revised
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A-3
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Notes:
1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes
warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property
rights or any other rights of Renesas or any third party with respect to the information in this document.
2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including,
but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples.
3. You should not use the products or the technology described in this document for the purpose of military applications such as the development of weapons of mass
destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws
and regulations, and procedures required by such laws and regulations.
4. All information included in this document such as product data, diagrams, charts, programs, algorithms, and application circuit examples, is current as of the date this
document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas products listed in this document,
please confirm the latest product information with a Renesas sales office. Also, please pay regular and careful attention to additional and different information to be
disclosed by Renesas such as that disclosed through our website. (http://www.renesas.com )
5. Renesas has used reasonable care in compiling the information included in this document, but Renesas assumes no liability whatsoever for any damages incurred as a
result of errors or omissions in the information included in this document.
6. When using or otherwise relying on the information in this document, you should evaluate the information in light of the total system before deciding about the applicability
of such information to the intended application. Renesas makes no representations, warranties or guaranties regarding the suitability of its products for any particular
application and specifically disclaims any liability arising out of the application and use of the information in this document or Renesas products.
7. With the exception of products specified by Renesas as suitable for automobile applications, Renesas products are not designed, manufactured or tested for applications
or otherwise in systems the failure or malfunction of which may cause a direct threat to human life or create a risk of human injury or which require especially high quality
and reliability such as safety systems, or equipment or systems for transportation and traffic, healthcare, combustion control, aerospace and aeronautics, nuclear power, or
undersea communication transmission. If you are considering the use of our products for such purposes, please contact a Renesas sales office beforehand. Renesas shall
have no liability for damages arising out of the uses set forth above.
8. Notwithstanding the preceding paragraph, you should not use Renesas products for the purposes listed below:
(1) artificial life support devices or systems
(2) surgical implantations
(3) healthcare intervention (e.g., excision, administration of medication, etc.)
(4) any other purposes that pose a direct threat to human life
Renesas shall have no liability for damages arising out of the uses set forth in the above and purchasers who elect to use Renesas products in any of the foregoing
applications shall indemnify and hold harmless Renesas Technology Corp., its affiliated companies and their officers, directors, and employees against any and all
damages arising out of such applications.
9. You should use the products described herein within the range specified by Renesas, especially with respect to the maximum rating, operating supply voltage range,
movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas shall have no liability for malfunctions or damages
arising out of the use of Renesas products beyond such specified ranges.
10. Although Renesas endeavors to improve the quality and reliability of its products, IC products have specific characteristics such as the occurrence of failure at a certain
rate and malfunctions under certain use conditions. Please be sure to implement safety measures to guard against the possibility of physical injury, and injury or damage
caused by fire in the event of the failure of a Renesas product, such as safety design for hardware and software including but not limited to redundancy, fire control and
malfunction prevention, appropriate treatment for aging degradation or any other applicable measures. Among others, since the evaluation of microcomputer software
alone is very difficult, please evaluate the safety of the final products or system manufactured by you.
11. In case Renesas products listed in this document are detached from the products to which the Renesas products are attached or affixed, the risk of accident such as
swallowing by infants and small children is very high. You should implement safety measures so that Renesas products may not be easily detached from your products.
Renesas shall have no liability for damages arising out of such detachment.
12. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written approval from Renesas.
13. Please contact a Renesas sales office if you have any questions regarding the information contained in this document, Renesas semiconductor products, or if you have
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