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Crystals
Special Issues
Advances in Diamond Crystals and Devices
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Advances in Diamond Crystals and Devices

A special issue of Crystals (ISSN 2073-4352). This special issue belongs to the section "Inorganic Crystalline Materials".

Deadline for manuscript submissions: 20 August 2025 | Viewed by 378

Special Issue Editors

Dr. Benjian Liu

E-Mail Website
Guest Editor
1. National Key Laboratory of Science and Technology on Advanced Composites in Special Environments, Harbin Institute of Technology, Harbin 150080, China
2. Zhengzhou Research Institute, Harbin Institute Technology, Zhengzhou 450000, China
Interests: diamond; voltaic batteries; MOSFETs; detectors
Dr. Yu Fu

E-Mail Website
Guest Editor
School of Microelectronics, Xidian University, Xi’an 710126, China
Interests: diamond; electronic devices; device physics
Prof. Dr. Bing Dai

E-Mail Website
Guest Editor
1. National Key Laboratory of Science and Technology on Advanced Composites in Special Environments, Harbin Institute of Technology, Harbin 150080, China
2. Zhengzhou Research Institute, Harbin Institute Technology, Zhengzhou 450000, China
Interests: diamond growth; micro machining of ultra-hard materials; color centers in diamond; diamond power devices; devices for extreme environments
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Diamond, with its extraordinary properties, has been the focus of intense research and development in recent years. Significant progress has been made in synthesis methods, size, doping, and other aspects of diamond materials. On this basis, diamond devices have made breakthroughs in applications such as microwave power, radiation detection, electrochemical processing, ultraviolet imaging, and so on. In addition, diamond materials and devices are increasingly applied in emerging fields such as quantum sensing for ultra-precise measurements, high-power microwave technology for advanced communication, and fluorescent nanodiamond-enabled biomedical imaging and drug delivery.

This Special Issue aims to showcase the latest research and innovation in these frontier technologies related to diamond materials and devices. It will provide a platform for researchers, engineers, and industry professionals to exchange ideas and insights, driving the further development and application of diamond in diverse fields and paving the way for future technological breakthroughs.

Dr. Benjian Liu
Dr. Yu Fu
Prof. Dr. Bing Dai
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Crystals is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2100 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • diamond growth and doping
  • high power devices
  • microwave power devices
  • diamond detectors
  • color centers
  • quantum sensing
  • quantum technologies
  • fluorescent nanodiamond
  • application of diamond for heat dissipation
  • diamond and carbon materials for biomedical applications
  • chemical applications

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Published Papers (1 paper)

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Research

12 pages, 5489 KiB  
Article
Preparation and Characterization of GaN-on-Si HEMTs with Nanocrystalline Diamond Passivation
by Yu Fu, Songyuan Song, Zeyang Ren, Liaoliang Zhu, Jinfeng Zhang, Kai Su, Junfei Chen, Tao Zhang, Weidong Zhu, Junpeng Li, Weidong Man, Yue Hao and Jincheng Zhang
Crystals 2025, 15(3), 242; https://doi.org/10.3390/cryst15030242 - 28 Feb 2025
Viewed by 245
Abstract
Thermal accumulation under high output power densities is one of the most significant challenges for GaN power devices. Diamond, with its ultra-high thermal conductivity, offers great potential for improving heat dissipation in high-power GaN devices. In this study, nanocrystalline diamond (NCD) passivated high-electron [...] Read more.
Thermal accumulation under high output power densities is one of the most significant challenges for GaN power devices. Diamond, with its ultra-high thermal conductivity, offers great potential for improving heat dissipation in high-power GaN devices. In this study, nanocrystalline diamond (NCD) passivated high-electron mobility transistors (HEMTs) based on AlGaN/GaN-on-Si heterostructures were fabricated with a gate length of 2 μm. The NCD film has a thickness of 250–383 nm and a uniform morphology with a grain size of mostly ~240 nm. Compared to the devices without NCD passivation, those devices with the NCD passivation layer show an increase in current density from 447 mA/mm to 555 mA/mm, a reduction in on-resistance from 20 Ω·mm to 13 Ω·mm, and a noticeable suppression of current degradation at high-drain voltages. Junction temperature measurements under varied output power densities reveal a 36% improvement in heat dissipation efficiency with the NCD passivation. These results fully demonstrate the promising potential of NCD for enhancing heat dissipation in high-power GaN devices. Full article
(This article belongs to the Special Issue Advances in Diamond Crystals and Devices)
►▼ Show Figures

Figure 1

Figure 1
<p>Schematic diagram of the fabrication processes of the NCD passivated GaN HEMTs.</p> Full article ">Figure 2
<p>SEM micrographs of the fabricated devices. (<b>a</b>) Overview of the HEMT device with NCD passivation; (<b>b</b>) magnified view of the local 2 μm-gate region area.</p> Full article ">Figure 3
<p>SEM micrographs of the sample after NCD film growth. (<b>a</b>) Surface morphology and (<b>b</b>) cross-section view.</p> Full article ">Figure 4
<p>Raman spectrum on the AlGaN/GaN-on-Si sample after NCD growth.</p> Full article ">Figure 5
<p>X-ray diffraction results of the prepared sample before and after NCD growth. (<b>a</b>) Comparison of the (002) plane rocking curves; (<b>b</b>) the (002) plane FWHM and peak intensity shift; (<b>c</b>) comparison of the (102) plane rocking curves; (<b>d</b>) the (102) plane FWHM and peak intensity shift.</p> Full article ">Figure 6
<p>CTLM test results (<b>a</b>) before and (<b>b</b>) after NCD growth.</p> Full article ">Figure 7
<p>Output characteristics comparison between the devices with and without the NCD passivation layer.</p> Full article ">Figure 8
<p>Transfer characteristics comparison between the devices with and without the NCD passivation layer. (<b>a</b>) I<sub>D</sub> and G<sub>m</sub>; (<b>b</b>) I<sub>D</sub> and I<sub>G</sub>.</p> Full article ">Figure 9
<p>Breakdown characteristics comparison between the devices with and without the NCD passivation layer.</p> Full article ">Figure 10
<p>Junction temperature variations in the devices with and without the NCD passivation layer under different output power densities.</p> Full article ">
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