1.
|
Towards a new generation of Monolithic Active Pixel Sensors
/ Chauhan, Ankur (DESY) ; Viera, Manuel Del Rio (DESY ; Bonn U.) ; Eckstein, Doris (DESY) ; Feindt, Finn (DESY) ; Gregor, Ingrid-Maria (DESY) ; Hansen, Karsten (DESY) ; Huth, Lennart (DESY) ; Mendes, Larissa (DESY ; U. Campinas) ; Mulyanto, Budi (DESY) ; Rastorguev, Daniil (DESY ; Wuppertal U.) et al.
A new generation of Monolithic Active Pixel Sensors (MAPS), produced in a 65 nm CMOS imaging process, promises higher densities of on-chip circuits and, for a given pixel size, more sophisticated in-pixel logic compared to larger feature size processes. MAPS are a cost-effective alternative to hybrid pixel sensors since flip-chip bonding is not required. [...]
arXiv:2210.09810.-
2023 - 3 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 1047 (2023) 167821
Fulltext: PDF;
In : 15th Pisa Meeting on Advanced Detectors, La Biodola - Isola D'elba, Italy, 22 - 28 May 2022, pp.167821
|
|
2.
|
Developing a Monolithic Silicon Sensor in a 65nm CMOS Imaging Technology for Future Lepton Collider Vertex Detectors
/ Simancas, Adriana (DESY, Zeuthen ; Bonn U.) ; Braach, Justus (CERN ; Hamburg U.) ; Buschmann, Eric (CERN) ; Chauhan, Ankur (DESY, Zeuthen) ; Dannheim, Dominik (CERN) ; Viera, Manuel Del Rio (DESY, Zeuthen ; Bonn U.) ; Dort, Katharina (CERN ; Giessen U.) ; Eckstein, Doris (DESY, Zeuthen) ; Feindt, Finn (DESY, Zeuthen) ; Gregor, Ingrid-Maria (DESY, Zeuthen) et al.
Monolithic CMOS sensors in a 65 nm imaging technology are being investigated by the CERN EP Strategic R&D; Programme on Technologies for Future Experiments for an application in particle physics. The appeal of monolithic detectors lies in the fact that both sensor volume and readout electronics are integrated in the same silicon wafer, providing a reduction in production effort, costs and scattering material. [...]
arXiv:2303.18153.-
2022-11-05 - 7 p.
- Published in : 10.1109/NSS/MIC44845.2022.10398964
Fulltext: PDF;
In : 2022 IEEE Nuclear Science Symposium (NSS), Medical Imaging Conference (MIC) and Room Temperature Semiconductor Detector (RTSD) Conference (NSS/MIC 2022), Milan, Italy, 5 - 12 Nov 2022
|
|
3.
|
Simulations and performance studies of a MAPS in 65 nm CMOS imaging technology
/ Simancas, Adriana (DESY ; Bonn U.) ; Braach, Justus (CERN ; Hamburg U., Dept. Math.) ; Buschmann, Eric (CERN) ; Chauhan, Ankur (DESY) ; Dannheim, Dominik (CERN) ; Viera, Manuel Del Rio (DESY ; Bonn U.) ; Dort, Katharina (CERN ; Giessen U.) ; Eckstein, Doris (DESY) ; Feindt, Finn (DESY) ; Gregor, Ingrid-Maria (DESY) et al.
Monolithic active pixel sensors (MAPS) produced in a 65 nm CMOS imaging technology are being investigated for applications in particle physics. The MAPS design has a small collection electrode characterized by an input capacitance of ~fF, granting a high signal-to-noise ratio and low power consumption. [...]
arXiv:2402.14524.-
2024-05-03 - 5 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 1064 (2024) 169414
Fulltext: 2402.14524 - PDF; Publication - PDF;
In : 13th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors, Vancouver, Canada, 3 - 8 Dec 2023, pp.169414
|
|
4.
|
Cross-talk of a large-scale depleted monolithic active pixel sensor (DMAPS) in 180nm CMOS technology
/ Schall, Lars (Bonn U.) ; Bespin, Christian (Bonn U.) ; Caicedo, Ivan (Bonn U.) ; Dingfelder, Jochen (Bonn U.) ; Hemperek, Tomasz (Bonn U.) ; Hirono, Toko (Bonn U.) ; Hügging, Fabian (Bonn U.) ; Krüger, Hans (Bonn U.) ; Moustakas, Konstantinos (Bonn U.) ; Pernegger, Heinz (CERN) et al.
Monolithic pixel detectors combine readout electronics and sensor in a single entity of silicon, which simplifies the production procedure and lowers the material budget compared to conventional hybrid pixel detector concepts. Benefiting from the advances in commercial CMOS processes towards large biasing voltage capabilities and the increasing availability of high-resistivity substrates, depleted monolithic active pixel sensors (DMAPS) are able to cope with the high-rate and high-radiation environments faced in modern high-energy physics experiments. [...]
arXiv:2402.12153.-
2024-04-19 - 7 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 1064 (2024) 169381
Fulltext: Publication - PDF; 2402.12153 - PDF;
In : 13th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors, Vancouver, Canada, 3 - 8 Dec 2023, pp.169381
|
|
5.
|
|
6.
|
Characterization of a depleted monolithic pixel sensors in 150 nm CMOS technology for the ATLAS Inner Tracker upgrade
/ Iguaz, F.J. (IRFU, Saclay) ; Balli, F. (IRFU, Saclay) ; Barbero, M. (Marseille, CPPM) ; Bhat, S. (Marseille, CPPM) ; Breugnon, P. (Marseille, CPPM) ; Caicedo, I. (Bonn U.) ; Chen, Z. (Marseille, CPPM) ; Degerli, Y. (IRFU, Saclay) ; Godiot, S. (Marseille, CPPM) ; Guilloux, F. (IRFU, Saclay) et al.
This work presents a depleted monolithic active pixel sensor (DMAPS) prototype manufactured in the LFoundry 150\,nm CMOS process. DMAPS exploit high voltage and/or high resistivity inclusion of modern CMOS technologies to achieve substantial depletion in the sensing volume. [...]
arXiv:1806.04400.-
2019-08-21 - 2 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 936 (2019) 652-653
Fulltext: PDF;
In : Frontier Detectors for Frontier Physics: XIV Pisa Meeting on Advanced Detectors, La Biodola, Isola D'elba, Italy, 27 May - 2 Jun 2018, pp.652-653
|
|
7.
|
|
8.
|
Radiation hard DMAPS pixel sensors in 150 nm CMOS technology for operation at LHC
/ Barbero, M. (Marseille, CPPM) ; Barrillon, Pierre (Marseille, CPPM) ; Bespin, C. (Bonn U.) ; Bhat, S. (Marseille, CPPM) ; Breugnon, Patrick (Marseille, CPPM) ; Caicedo, Ivan (Bonn U.) ; Chen, Z. (Marseille, CPPM) ; Degerli, Y. (IRFU, Saclay) ; Dingfelder, J. (Bonn U.) ; Godiot, Stephanie (Marseille, CPPM) et al.
Monolithic Active Pixel Sensors (MAPS) have been developed since the late 1990s employing silicon substrate with a thin epitaxial layer in which deposited charge is collected by disordered diffusion rather than by drift in an electric field. As a consequence the signal is small and slow, and the radiation tolerance is below the requirements for LHC experiments by factors of 100 to 1000. [...]
arXiv:1911.01119.-
2020-05-22 - 22 p.
- Published in : JINST
Fulltext: PDF;
|
|
9.
|
Low-power priority Address-Encoder and Reset-Decoder data-driven readout for Monolithic Active Pixel Sensors for tracker system
/ Yang, P (Hua-Zhong Normal U.) ; Aglieri, G (CERN) ; Cavicchioli, C (CERN) ; Chalmet, P L (Unlisted, FR) ; Chanlek, N (Suranaree U. of Tech.) ; Collu, A (Cagliari U. ; INFN, Italy) ; Gao, C (Hua-Zhong Normal U.) ; Hillemanns, H (CERN) ; Junique, A (CERN) ; Kofarago, M (CERN ; Utrecht U.) et al.
Active Pixel Sensors used in High Energy Particle Physics require low power consumption to reduce the detector material budget, low integration time to reduce the possibilities of pile-up and fast readout to improve the detector data capability. To satisfy these requirements, a novel Address-Encoder and Reset-Decoder (AERD) asynchronous circuit for a fast readout of a pixel matrix has been developed. [...]
2015 - 9 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 785 (2015) 61-69
Elsevier Open Access article: PDF;
|
|
10.
|
The Monopix chips: Depleted monolithic active pixel sensors with a column-drain read-out architecture for the ATLAS Inner Tracker upgrade
/ Caicedo, I. (Bonn U.) ; Barbero, M. (Marseille, CPPM) ; Barrillon, P. (Marseille, CPPM) ; Berdalovic, I. (CERN) ; Bhat, S. (Marseille, CPPM) ; Bespin, C. (Bonn U.) ; Breugnon, P. (Marseille, CPPM) ; Cardella, R. (CERN) ; Chen, Z. (Marseille, CPPM) ; Degerli, Y. (IRFU, Saclay) et al.
Two different depleted monolithic CMOS active pixel sensor (DMAPS) prototypes with a fully synchronous column-drain read-out architecture were designed and tested: LF-Monopix and TJ-Monopix. These chips are part of a R\&D; effort towards a suitable implementation of a CMOS DMAPS for the HL-LHC ATLAS Inner Tracker. [...]
arXiv:1902.03679.-
2019-06-05 - 10 p.
- Published in : JINST 14 (2019) C06006
Fulltext: PDF;
In : International Workshop on Semiconductor Pixel Detectors for Particles and Imaging (PIXEL2018), Taipei, Taiwan, 10 - 14 Dec 2018, pp.C06006
|
|