1.
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Performance of CMS silicon microstrip detectors with the APV6 readout chip
/ Meschini, M ; Albergo, S ; Angarano, M M ; Azzi, P ; Babucci, E ; Bacchetta, N ; Bader, A J ; Bagliesi, G ; Basti, A ; Biggeri, U et al.
We present results obtained with full-size wedge silicon microstrip detectors bonded to APV6 (Raymond et al., Proceedings of the 3rd Workshop on Electronics for LHC Experiments, CERN/LHCC/97-60) readout chips. We used two identical modules, each consisting of two crystals bonded together. [...]
Geneva : CERN, 2000
- Published in : Nucl. Instrum. Methods Phys. Res., A 447 (2000) 133-41
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2.
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Single event upset studies on the APV6 front end readout chip
/ Fulcher, J R ; Hall, G ; Raymond, M ; Bisello, D ; Paccagnella, A ; Stavitski, I ; Wyss, J ; Kaminski, A ; French, M ; Jones, L
CERN-OPEN-2000-112.-
Geneva : CERN, 1999 - 5 p.
Fulltext: PDF; Published version from CERN: PDF;
In : 5th Conference on Electronics for LHC Experiments, pp.513-517
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3.
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Performance of the APV6, Bonded to a Full Size Forward Milestone Silicon Detector
/ Busoni, Simone (INFN, Firenze, Italy) ; Civinini, Carlo (INFN, Firenze, Italy) ; D'Alessandro, Raffaello (INFN, Firenze, Italy) ; Lenzi, Michela (INFN, Firenze, Italy) ; Meschini, Marco (INFN, Firenze, Italy) ; Piergentili, A (INFN, Firenze, Italy) ; Pieri, Marco (INFN, Firenze, Italy)
We describe our test set-up used to read-out APV6 hybrids bonded to full size silicon detector modules ( 1) of the type built for the Forward Milestone. Choice of APV6 parameters is discussed and results with calibration pulses and MIPs are presented
CMS-NOTE-1999-058.-
Geneva : CERN, 1999
Fulltext: PDF PS.Z;
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4.
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5.
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Radiation damage studies of silicon microstrip sensors
/ Nakayama, T ; Arai, S ; Hara, K ; Shimojima, M ; Ikegami, Y ; Iwata, Y ; Johansen, L G ; Kobayashi, H ; Kohriki, T ; Kondo, T et al.
Various types of large area silicon microstrip detectors were fabricated for the development of radiation-tolerant detectors that will operate in the LHC ATLAS SCT. The detectors were irradiated with 12-GeV protons at KEK to fluences of 1.7*10/sup 14/ and 4.2*10/sup 14 / protons/cm/sup 2/. [...]
2000
- Published in : IEEE Trans. Nucl. Sci. 47 (2000) 1885-91
In : IEEE 1999 Medical Imaging Conference, Seattle, WA, USA, 24 - 30 Oct 1999, pp.1885-91
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6.
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Tests of CMS Silicon Detector Modules with a 350 MeV/c Hadron Beam
/ Angarano, Matteo Maria (INFN Perugia and Univ., Bari, Italy) ; Bauer, Thomas (HEPHY, Vienna, Austria) ; Biasini, Maurizio (INFN, Perugia, Italy) ; Bilei, Gian Mario (INFN, Perugia, Italy) ; Bisello, Dario (INFN, Padova, Italy) ; Cecchetti, S (INFN, Perugia, Italy) ; Creanza, Donato (INFN, Bari, Italy) ; Dierlamm, Alexander (IEKP Universitat Karlsruhe (TH), Germany) ; Dirkes, Guido (IEKP Universitat Karlsruhe (TH), Germany) ; Fano, Livio (INFN, Perugia, Italy) et al.
Different CMS silicon microstrip detectors equipped with the APV6, APV25S0 or APV25S1 readout chips have been exposed to a 350 MeV/c pion or proton beam at the Paul Scherrer Institute (PSI, Villigen, CH). We compare the performance of irradiated and non-irradiated silicon sensors as well as the APV6 and APV25 behavior. [...]
CMS-NOTE-2001-049.-
Geneva : CERN, 2001
Fulltext: PDF PS.Z;
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7.
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Test of the CMS silicon strip detectors in the hadron beam
/ Zhukov, V ; Creanza, D ; Radicci, V ; Dierlamm, A ; Dirkes, G ; Grigoriev, E ; Hartmann, F ; Heier, S ; Röderer, F ; Bisello, D et al.
CMS silicon microstrip detectors of different types equipped with the APV readout chips have been exposed to a high intensity 350 MeV/c pion beam. We study the performance of irradiated and non-irradiated silicon sensors as well as the readout chip behavior. [...]
2002
In : 7th International Conference on Advanced Technology and Particle Physics, Como, Italy, 15 - 19 Oct 2001, pp.224-230
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8.
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High-voltage breakdown studies on Si microstrip detectors
/ Albergo, S ; Angarano, M M ; Azzi, P ; Babucci, E ; Bacchetta, N ; Bader, A J ; Bagliesi, G ; Basti, A ; Biggeri, U ; Bilei, G M et al.
The breakdown performance of CMS barrel module prototype detectors and test devices with single and multi-guard structures were studied before and after neutron irradiation up to 2-10/sup 14/ 1 MeV equivalent neutrons. Before irradiation avalanche breakdown occurred at the guard ring implant edges. [...]
1999
- Published in : Nuovo Cimento A 112 (1999) 1271-83
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9.
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10.
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New results on silicon microstrip detectors of CMS tracker
/ Demaria, N ; Albergo, S ; Angarano, M M ; Azzi, P ; Babucci, E ; Bacchetta, N ; Bader, A J ; Bagliesi, G ; Basti, A ; Biggeri, U et al.
Interstrip and backplane capacitances on silicon microstrip detectors with pf strip on n substrate of 320 mu m thickness were measured for pitches between 60 and 240 mu m and width over pitch ratios between 0.13 and 0.5. Parametrisations of capacitance w.r.t. [...]
Geneva : CERN, 2000
- Published in : Nucl. Instrum. Methods Phys. Res., A 447 (2000) 142-50
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