CERN Accelerating science

Article
Title	High-voltage breakdown studies on Si microstrip detectors
Author(s)	Albergo, S ; Angarano, M M ; Azzi, P ; Babucci, E ; Bacchetta, N ; Bader, A J ; Bagliesi, G ; Basti, A ; Biggeri, U ; Bilei, G M ; Bisello, D ; Boemi, D ; Bosi, F ; Borrello, L ; Bozzi, C ; Braibant, S ; Breuker, Horst ; Bruzzi, Mara (INFN and Universita', Firenze, Italy) ; Buffini, A ; Busoni, S ; Calefato, G ; Candelori, A ; Caner, A ; Castaldi, R ; Castro, A ; Catacchini, E ; Checcucci, B ; Ciampolini, P ; Civinini, C ; Creanza, D ; D'Alessandro, R ; Da Rold, M ; Demaria, N ; De Palma, M ; Dell'Orso, R ; Marina, R D ; Dutta, S ; Eklund, C ; Peisert, Anna (CERN) ; Feld, L ; Fiore, L ; Focardi, E ; French, M ; Freudenreich, Klaus ; Fürtjes, A ; Giassi, A ; Giorgi, M A ; Giraldo, A ; Glessing, B ; Gu, W H ; Hall, G ; Hammarström, R ; Hebbeker, T ; Hrubec, Josef ; Muhtinen, M ; Kaminski, A ; Karimäki, V ; Saint-Koenig, M ; Krammer, Manfred ; Lariccia, P ; Lenzi, M ; Loreti, M ; Lübelsmeyer, K ; Lustermann, W ; Mättig, P ; Maggi, G ; Mannelli, M ; Mantovani, G C ; Marchioro, A ; Mariotti, C ; Martignon, G ; McEvoy, B ; Meschini, M ; Messineo, A ; My, S ; Paccagnella, A ; Palla, Fabrizio ; Pandoulas, D ; Papi, A ; Parrini, G ; Passeri, D ; Pieri, M ; Piperov, S ; Potenza, R ; Radicci, V ; Raffaelli, F ; Raymond, M ; Santocchia, A ; Schmitt, B ; Selvaggi, G ; Servoli, L ; Sguazzoni, G ; Siedling, R ; Silvestris, L ; Skog, K ; Starodumov, Andrei ; Stavitski, I ; Stefanini, G ; Tempesta, P ; Tonelli, G ; Tricomi, A ; Tuuva, T ; Vannini, C ; Verdini, P G ; Viertel, Gert M ; Zie, Z ; Li Ya Hong ; Watts, S ; Wittmer, B
Affiliation	(INFN, Catania Univ)
Publication	1999
In:	Nuovo Cimento A 112 (1999) 1271-83
DOI	10.1007/BF03185593
Subject category	Detectors and Experimental Techniques
Accelerator/Facility, Experiment	CERN LHC ; CMS
Abstract	The breakdown performance of CMS barrel module prototype detectors and test devices with single and multi-guard structures were studied before and after neutron irradiation up to 2-10/sup 14/ 1 MeV equivalent neutrons. Before irradiation avalanche breakdown occurred at the guard ring implant edges. We measured 100-300 V higher breakdown voltage values for the devices with multi-guard than for devices with single-guard ring, After irradiation and type inversion the breakdown was smoother than before irradiation and the breakdown voltage value increased to 500-600 V for most of the devices. (9 refs).