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The Silicon Sensors for the Compact Muon Solenoid Tracker - Design and Qualification Procedure
/ Agram, Jean-Laurent (Haute Alsace U., GRPHE) ; Angarano, Matteo Maria (INFN, Perugia) ; Assouak, Samia (Louvain U., Inst. Phys. Nucl.) ; Bergauer T. (IAEA, Vienna) ; Bilei, Gian Mario (CERN) ; Borrello, Laura (INFN, Pisa) ; Brianzi, Mirko (INFN, Florence) ; Civinini, Carlo (INFN, Florence) ; Dierlamm, Alexander (Karlsruhe U., EKP) ; Dinu, Nicoleta (INFN, Perugia) et al.
The Compact Muon Solenoid (CMS) is one of the experiments at the Large Hadron Collider (LHC) under construction at CERN. Its inner tracking system consist of the world largest Silicon Strip Tracker (SST). [...]
CMS-NOTE-2003-015.-
Geneva : CERN, 2003
Fulltext: PDF PS.Z;
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Tests of CMS Silicon Detector Modules with a 350 MeV/c Hadron Beam
/ Angarano, Matteo Maria (INFN Perugia and Univ., Bari, Italy) ; Bauer, Thomas (HEPHY, Vienna, Austria) ; Biasini, Maurizio (INFN, Perugia, Italy) ; Bilei, Gian Mario (INFN, Perugia, Italy) ; Bisello, Dario (INFN, Padova, Italy) ; Cecchetti, S (INFN, Perugia, Italy) ; Creanza, Donato (INFN, Bari, Italy) ; Dierlamm, Alexander (IEKP Universitat Karlsruhe (TH), Germany) ; Dirkes, Guido (IEKP Universitat Karlsruhe (TH), Germany) ; Fano, Livio (INFN, Perugia, Italy) et al.
Different CMS silicon microstrip detectors equipped with the APV6, APV25S0 or APV25S1 readout chips have been exposed to a 350 MeV/c pion or proton beam at the Paul Scherrer Institute (PSI, Villigen, CH). We compare the performance of irradiated and non-irradiated silicon sensors as well as the APV6 and APV25 behavior. [...]
CMS-NOTE-2001-049.-
Geneva : CERN, 2001
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Characterization of neutron irradiated, low-resistivity silicon detectors
/ Angarano, M M (Perugia U. ; INFN, Perugia) ; Ciampolini, P (INFN, Perugia ; Parma U.) ; Giorgi, M (Perugia U. ; INFN, Perugia) ; Bilei, G M (Perugia U. ; INFN, Perugia) ; Mihul, A (Bucharest U.) ; Militaru, O (INFN, Perugia ; Bucharest, IFIN-HH) ; Passeri, D (INFN, Perugia) ; Scorzoni, A (INFN, Perugia)
A complete electrical characterization of silicon detectors fabricated using low-( ~ 1.5 kOhm cm) and high-( > 5 kOhm cm) resistivity substrates has been carried out. Measurements have been performed before and after neutron irradiation at several different fluences, up to 3x10^14 n cm^-2 ( 1 MeV eq.). [...]
CMS-CR-2000-006.-
Geneva : CERN, 2000
Fulltext: PDF PS.Z;
In : 5th International Conference on Position-sensitive Detectors, London, UK, 13 - 17 Sep 1999
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Test Beam Results on a Double-Sided Double-Metal Irradiated Microstrip Detector Before and After Neutron Irradiation
/ Angarano, Matteo Maria (INFN Perugia and Univ., Bari, Italy) ; Boemi, Davide (INFN, Catania, Italy) ; Creanza, Donato (INFN, Bari, Italy) ; Fiore, Luigi (INFN, Bari, Italy) ; Maggi, Giorgio (INFN, Bari, Italy) ; My, Salvatore (INFN, Bari, Italy) ; Pompili, Alexis (INFN, Bari, Italy) ; Raso, Giuseppe (INFN, Bari, Italy) ; Selvaggi, Giovanna (INFN, Bari, Italy) ; Silvestris, Lucia (INFN, Bari, Italy) et al.
We present the results of beam tests carried out on an irradiated AC-coupled, poly biased, double-sided, double-metal silicon microstrip detector. The detector has been exposed to the beam at three subsequent times: before irradiation, right after irradiation and one year later, keeping it at 0 C. [...]
CMS-NOTE-1997-103.-
Geneva : CERN, 1997
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High Voltage Operation of heavily irradiated silicon microstrip detectors
/ Gu, W H (RWTH Aachen U.) ; Albergo, S (INFN, Catania ; Catania U.) ; Angarano, M M (INFN, Perugia ; Bari U.) ; Bader, A (INFN, Bari ; Bari U.) ; Biggeri, U (INFN, Florence ; Florence U.) ; Boemi, D (INFN, Catania ; Catania U.) ; Braibant, S (CERN) ; Breuker, H (CERN) ; Bruzzi, Mara (INFN, Florence ; Florence U.) ; Caner, A (CERN) et al.
We discuss the results obtained from the R&D; studies, done within the CMS experiment at LHC related to the behaviour of silicon microstrip prototype detectors when they are operated at high bias voltages before and after heavy irradiation, simulating up to 10 years of LHC running conditions. We have found detectors from several manufacturesrs that are able to work at V_bias > 500 Volts before and after the irradiation procedure, maintaining an acceptable performance with S/N > 14, efficiency close to 100% and few ghost hits..
CMS-CR-1999-010.-
Geneva : CERN, 1999
Fulltext: PDF PS.Z;
In : 6th International Conference on Advanced Technology and Particle Physics : ICATPP-6, Como, Italy, 5 - 9 Oct 1998
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Beam test results on n+ on n type silicon microstrip detectors before and after neutron irradiation
/ Angarano, Matteo Maria ; Bader, Attila ; Creanza, Donato ; Fiore, Luigi ; Maggi, Giorgio ; My, Salvatore ; Radicci, Valeria ; Raso, Giuseppe ; Selvaggi, Giovanna ; Silvestris, Lucia et al.
We present beam test results on AC-coupled, single-sided, n+ on n type silicon microstrip detectors. We have tested the detectors before and after irradiation at a fluence of 8.3E13 n/cm2, at different temperatures and bias voltages. [...]
CMS-NOTE-1999-014.-
Geneva : CERN, 1999
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Characteristics and SPICE Simulation of a Single-Sided, n+ on n Si Strip Detector Before and After Neutron Irradiation
/ Angarano, Matteo Maria (INFN and University of Bari, Bari, Italy) ; Bader, Attila (INFN and University of Bari, Bari, Italy) ; Creanza, Donato (INFN and University of Bari, Bari, Italy) ; Diacono, Domenico (INFN and University of Bari, Bari, Italy) ; My, Salvatore (INFN and University of Bari, Bari, Italy) ; Raso, Giuseppe (INFN and University of Bari, Bari, Italy) ; Tempesta, Paolo (INFN and University of Bari, Bari, Italy) ; De Palma, Mauro (INFN and University of Bari, Bari, Italy)
Capacitance, resistance and current measurements were carried out on single-sided, n+ on n silicon strip detectors. We studied the type inversion after irradiating the detectors with neutron fluences up to 8.3 10 ^13 neutron/cm2. [...]
CMS-NOTE-1998-034.-
Geneva : CERN, 1998
Fulltext: PDF PS.Z;
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