CERN Accelerating science

CMS Note
Report number	CMS-CR-1999-010
Title	High Voltage Operation of heavily irradiated silicon microstrip detectors
Author(s)	Gu, W H (RWTH Aachen U.) ; Albergo, S (INFN, Catania ; Catania U.) ; Angarano, M M (INFN, Perugia ; Bari U.) ; Bader, A (INFN, Bari ; Bari U.) ; Biggeri, U (INFN, Florence ; Florence U.) ; Boemi, D (INFN, Catania ; Catania U.) ; Braibant, S (CERN) ; Breuker, H (CERN) ; Bruzzi, Mara (INFN, Florence ; Florence U.) ; Caner, A (CERN) ; Catacchini, E (INFN, Florence ; Florence U.) ; Civinini, C (INFN, Florence ; Florence U.) ; Creanza, D (INFN, Bari ; Bari U.) ; D'Alessandro, R (INFN, Florence ; Florence U.) ; Demaria, N (CERN) ; Eklund, C (Helsinki Inst. of Phys.) ; Peisert, Anna (CERN) ; Feld, L (CERN) ; Fiore, L (INFN, Bari ; Bari U.) ; Focardi, E (INFN, Florence ; Florence U.) ; Fürtjes, A (CERN) ; Glessing, B (CERN) ; Hall, G (Imperial Coll., London) ; Hammerstrom, R (CERN) ; Dollan, Ralph (Humboldt U., Berlin) ; Huhtinen, M (CERN) ; Karimäki, V (Helsinki Inst. of Phys.) ; König, S (RWTH Aachen U.) ; Lenzi, M (INFN, Florence ; Florence U.) ; Lübelsmeyer, K (RWTH Aachen U.) ; Maggi, G (INFN, Bari ; Bari U.) ; Mannelli, M (CERN) ; Marchioro, A (CERN) ; Mariotti, C (CERN) ; Mättig, P (CERN) ; McEvoy, B (Imperial Coll., London) ; Meschini, M (INFN, Florence ; Florence U.) ; My, S (INFN, Bari ; Bari U.) ; Pandoulas, D (RWTH Aachen U.) ; Parrini, G (INFN, Florence ; Florence U.) ; Pieri, M (INFN, Florence ; Florence U.) ; Dollan, Ralph (Humboldt U., Berlin) ; Potenza, R (INFN, Catania ; Catania U.) ; Raso, G (INFN, Bari ; Bari U.) ; Raymond, M (Imperial Coll., London) ; Schmitt, B (CERN) ; Selvaggi, G (INFN, Bari ; Bari U.) ; Siedling, R (RWTH Aachen U.) ; Silvestris, L (INFN, Bari ; Bari U.) ; Skog, K (Helsinki Inst. of Phys.) ; Stefanini, G (CERN) ; Tempesta, P (INFN, Bari ; Bari U.) ; Tricomi, A (INFN, Catania ; Catania U.) ; Watts, S (Brunel U.) ; Wittmer, B (RWTH Aachen U.) ; De Palma, M (INFN, Bari ; Bari U.)
Submitted to	6th International Conference on Advanced Technology and Particle Physics : ICATPP-6, Como, Italy, 5 - 9 Oct 1998
Submitted by	24 Feb 1999
Subject category	Detectors and Experimental Techniques
Accelerator/Facility, Experiment	CERN LHC ; CMS
Free keywords	RADHARD ; TK-SILICON ; TRACKING
Abstract	We discuss the results obtained from the R&D studies, done within the CMS experiment at LHC related to the behaviour of silicon microstrip prototype detectors when they are operated at high bias voltages before and after heavy irradiation, simulating up to 10 years of LHC running conditions. We have found detectors from several manufacturesrs that are able to work at V_bias > 500 Volts before and after the irradiation procedure, maintaining an acceptable performance with S/N > 14, efficiency close to 100% and few ghost hits.
Copyright/License	Preprint: (License: CC-BY-4.0)