Sinop Üniversitesi
Metallurgical and Materials engineering
The morphological evolution of voids at the unpassivated surfaces and the sidewalls of the single crystal metallic films are investigated via computer simulations by using the novel mathematical model developed by Ogurtani relying on the... more
The morphological evolution of voids at the unpassivated surfaces and the sidewalls of the single crystal metallic films are investigated via computer simulations by using the novel mathematical model developed by Ogurtani relying on the fundamental postulates of irreversible thermodynamics. The effects of the drift-diffusion anisotropy on the development of the surface morphological scenarios are fully explored under the action of the electromigration (EM) and capillary forces (CF), utilizing numerous combination of the surface textures and the directions of the applied electric field. The interconnect failure time due to the EM induced wedge shape internal voids and the incubation time of the oscillatory surface waves, under the severe instability regimes, are deduced by the novel renormalization procedures applied on the outputs of the computer simulation experiments.
Quantum dots (QD) have discrete energy spectrum, which can be adjusted over a wide range by tuning composition, density, size, lattice strain, and morphology. These features make quantum dots attractive for the design and fabrication of... more
Quantum dots (QD) have discrete energy spectrum, which can be adjusted over a wide range by tuning composition, density, size, lattice strain, and morphology. These features make quantum dots attractive for the design and fabrication of novel electronic, magnetic and photonic devices and other functional materials used in cutting-edge applications. The formation of QD on epitaxially strained thin film surfaces, known as Stranski-Krastanow (SK) islands, has attracted great attention due to their unique electronic properties. Here, we present a systematic dynamical simulation study for the spontaneous evolution of the SK islands on the stochastically rough surfaces (nucleationless growth). During the development of SK islands through the mass accumulation at randomly selected regions of the film via surface drift-diffusion (induced by the capillary and mismatch stresses) with and/or without growth, one also observes the formation of an extremely thin wetting layer having a thickness of a few Angstroms. Above a certain threshold level of the mismatch strain and/or the size of the patch, the formation of multiple islands separated by shallow wetting layers is also observed as metastable states such as doublets even multiplets. These islands are converted into a distinct SK islands after long annealing times by coalescence through the long range surface diffusion. Extensive computer simulation studies demonstrated that after an initial transient regime, there is a strong quadratic relationship between the height of the SK singlet and the intensity of the lattice mismatch strain (in a wide range of stresses up to 8.5 GPa for germanium thin crystalline films), with the exception at those critical points where the morphological (shape change with necking) transition takes place.
- by Ersin Emre Oren and +2
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The morphological evolution of voids at the unpassivated surfaces and the sidewalls of the single crystal metallic films are investigated via computer simulations by using the novel mathematical model developed by Ogurtani relying on the... more
The morphological evolution of voids at the unpassivated surfaces and the sidewalls of the single crystal metallic films are investigated via computer simulations by using the novel mathematical model developed by Ogurtani relying on the fundamental postulates of irreversible thermodynamics. The effects of the drift-diffusion anisotropy on the development of the surface morphological scenarios are fully explored under the action of the electromigration (EM) and capillary forces (CF), utilizing numerous combination of the surface textures and the directions of the applied electric field. The interconnect failure time due to the EM induced wedge shape internal voids and the incubation time of the oscillatory surface waves, under the severe instability regimes, are deduced by the novel renormalization procedures applied on the outputs of the computer simulation experiments.