The horizontal cavity surface emitting laser (HCSEL) boasts excellent properties, including high power, high beam quality, and ease of packaging and integration. It fundamentally resolves the problem of the large divergence angle in traditional edge-emitting semiconductor lasers, making it a feasible scheme for realizing high-power, small-divergence-angle, and high-beam-quality semiconductor lasers. Here, we introduce the technical scheme and review the development status of HCSELs. Firstly, we thoroughly analyze the structure, working principles, and performance characteristics of HCSELs according to different structures, such as the structural characteristics and key technologies. Additionally, we describe their optical properties. Finally, we analyze and discuss potential development prospects and challenges for HCSELs.
Keywords: SE-DFB laser; high power semiconductor laser; photonic crystal; second order diffraction; surface emission laser.