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WO2024021938A1 - Two-terminal stacked solar cell based on mxene material interconnection, and preparation method therefor - Google Patents

Two-terminal stacked solar cell based on mxene material interconnection, and preparation method therefor Download PDF

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Publication number
WO2024021938A1
WO2024021938A1 PCT/CN2023/101508 CN2023101508W WO2024021938A1 WO 2024021938 A1 WO2024021938 A1 WO 2024021938A1 CN 2023101508 W CN2023101508 W CN 2023101508W WO 2024021938 A1 WO2024021938 A1 WO 2024021938A1
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layer
perovskite
glass substrate
conductive glass
transparent conductive
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PCT/CN2023/101508
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French (fr)
Chinese (zh)
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朱卫东
姚小彦
于淼
董鹏
胡一栋
石生斌
张春福
陈大正
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青海黄河上游水电开发有限责任公司
国家电投集团黄河上游水电开发有限责任公司
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Publication of WO2024021938A1 publication Critical patent/WO2024021938A1/en

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/549Organic PV cells

Definitions

  • the invention relates to the technical field of solar cells, and in particular to a full perovskite two-terminal stacked solar cell based on MXene material interconnection and a preparation method thereof.
  • Organic/inorganic hybrid perovskite materials have attracted widespread attention due to their excellent optoelectronic properties and low-cost preparation methods, and have been rapidly developed and applied. According to existing reports, in the application of perovskite materials in solar cells, the efficiency of single-junction cells has reached 25.7%, which is close to the highest efficiency of current mainstream silicon-based solar cells. Organic solar cells are similar to perovskite solar cells. The band gap and open circuit voltage are easy to control. However, the maximum efficiency of single-junction cells is limited by the Shockley-Quisser limit. Therefore, in order to further improve the efficiency of solar cells, stacked cells The exploration has become the only way for related work, among which perovskite/organic tandem batteries have received widespread attention.
  • Full-perovskite tandem solar cells composed of perovskite bottom cells and perovskite top cells can be divided into two-terminal stacks and four-terminal stacks, each with its own advantages.
  • the four-terminal stacked battery requires the preparation of two complete and mutually independent battery structures, and then the two batteries are simply stacked and pressed together.
  • the two batteries do not affect each other, but it increases the preparation cost, and there are too many An excessively thick stacked structure will also cause additional light loss and have a greater impact on cell efficiency.
  • the two-terminal stack is to prepare a perovskite top cell based on a perovskite bottom cell as a substrate.
  • the main challenge is: 1) How to achieve electrical series connection and optical coupling between the top cell and the bottom cell; 2)
  • the top battery is prepared using the bottom battery as a substrate.
  • the preparation process of the top battery is subject to greater restrictions. For example, the process temperature of the top battery cannot exceed the maximum withstand temperature of the bottom battery.
  • the present invention provides a two-terminal laminated solar cell based on MXene material interconnection and a preparation method thereof, which enables effective electrical series connection and optical coupling between the perovskite bottom cell and the perovskite top cell. , and reduce the difficulty of the preparation process of all-perovskite tandem batteries.
  • a two-terminal tandem solar cell based on MXene material interconnection which includes a perovskite bottom cell, an MXene material interconnection layer and a perovskite top cell; the MXene material interconnection layer is deposited on the calcium On the titanium bottom cell, the perovskite top cell is bonded to the MXene material interconnect layer.
  • the material of the MXene material interconnection layer is Nb 2 CT x .
  • the thickness of the MXene material interconnection layer is 50 nm to 200 nm.
  • the perovskite bottom cell includes a first conductive glass substrate, a first electron transport layer, a first perovskite light absorption layer, a first hole transport layer, and a transmission buffer that are stacked in sequence. layer, a first transparent conductive layer and a top electrode layer, the first conductive glass substrate is connected to a first extraction electrode; the perovskite top cell includes a second conductive glass substrate, a second hole and a second conductive glass substrate that are stacked in sequence.
  • the transmission layer, the second perovskite light absorption layer, the second electron transmission layer and the second transparent conductive layer, the second conductive glass substrate is connected to a second lead-out electrode; wherein, the MXene material interconnect layer is deposited and formed on On the top electrode layer, the second transparent conductive layer is bonded to the MXene material interconnect layer.
  • the perovskite bottom cell includes a first conductive glass substrate, a first hole transport layer, a first perovskite light absorption layer, a first electron transport layer, a transport layer, and a first conductive glass substrate, a first hole transport layer, and a first electron transport layer. Buffer layer, first transparent conductive layer and top electrode layer, the first conductive glass substrate is connected with a first extraction electrode; the perovskite top cell includes a second conductive glass substrate, a second electron conductor and a second conductive glass substrate that are stacked in sequence.
  • a transmission layer, a second perovskite light absorption layer, a second hole transport layer and a second transparent conductive layer, and a second extraction electrode is connected to the second conductive glass substrate; wherein, the MXene material interconnect layer is deposited to form On the top electrode layer, the second transparent conductive layer is bonded to the MXene material interconnect layer.
  • the first conductive glass substrate is ITO conductive glass
  • the material of the first electron transport layer is SnO 2
  • the material of the first perovskite light absorption layer is MA 0.72 FA 0.28 Pb(I 0.85 Cl 0.15 ) 3
  • the material of the first hole transport layer is Spiro-OMeTAD
  • the material of the transport buffer layer is MoO x
  • the material of the first transparent conductive layer is IZO
  • the material of the top electrode layer and the first extraction electrode is Ag
  • the second conductive glass substrate is ITO conductive glass
  • the material of the second hole transport layer is PTAA
  • the material of the second perovskite light absorption layer is FA 0.65 MA 0.2 Cs 0.15 Pb(I 0.8 Br 0.2 ) 3 or FA 0.83 Cs 0.17 PbI 2.8 Cl 0.2
  • the material of the second electron transport layer is SnO 2
  • the material of the second transparent conductive conductive glass substrate is ITO conductive glass
  • the material of the first electron transport layer
  • the thickness of the first conductive glass substrate is 0.5 mm ⁇ 1 mm and has a 50 nm ⁇ 200 nm thick ITO conductive layer, and the thickness of the first electron transport layer is 50 nm ⁇ 100nm, the thickness of the first perovskite light absorption layer is 300nm ⁇ 600nm, the thickness of the first hole transport layer is 10nm ⁇ 100nm, the thickness of the transmission buffer layer is 10nm ⁇ 80nm, the first transparent conductive layer The thickness of the layer is 50nm ⁇ 200nm, and the thickness of the top electrode layer and the first extraction electrode is The thickness is 30nm ⁇ 150nm respectively; in the perovskite top cell, the thickness of the second conductive glass substrate is 0.5mm ⁇ 1mm and has an ITO conductive layer with a thickness of 50nm ⁇ 200nm, and the second hole transport layer is The thickness is 10nm ⁇ 100nm, the thickness of the second perovskite light absorption layer is
  • the perovskite top cell is bonded to the MXene material interconnect layer and solidified and connected using curing glue.
  • the preparation of the two-terminal tandem solar cell includes the following steps:
  • a first conductive glass substrate Provides a first conductive glass substrate, and sequentially prepare a first electron transport layer, a first perovskite light absorption layer, a first hole transport layer, a transport buffer layer and a first stacked layer on the first conductive glass substrate.
  • a transparent conductive layer depositing a top electrode layer on the first transparent conductive layer and forming a first extraction electrode on the first conductive glass substrate to obtain the perovskite bottom battery;
  • a second conductive glass substrate Provide a second conductive glass substrate, and sequentially prepare a stacked second hole transport layer, a first perovskite light absorption layer, a second electron transport layer and a second transparent conductive layer on the second conductive glass substrate , and prepare and form a second extraction electrode on the second conductive glass substrate to obtain the perovskite top battery;
  • the second transparent conductive layer is bonded to the MXene material interconnection layer, and UV curing glue is applied around the connection interface between the second transparent conductive layer and the MXene material interconnection layer and irradiated with ultraviolet light After curing, the two-terminal tandem solar cell is prepared.
  • the method for two-terminal tandem solar cells includes the following steps:
  • a first conductive glass substrate is provided, and a first hole transport layer, a first perovskite light absorption layer, a first electron transport layer, a transport buffer layer and a first stacked layer are sequentially prepared on the first conductive glass substrate.
  • a transparent conductive layer depositing a top electrode layer on the first transparent conductive layer and forming a first extraction electrode on the first conductive glass substrate to obtain the perovskite bottom battery;
  • a second conductive glass substrate is provided, and a second electron transport layer, a second perovskite light absorption layer, a second hole transport layer and a second transparent conductive layer formed in a stack are sequentially prepared on the second conductive glass substrate. , and prepare and form a second extraction electrode on the second conductive glass substrate to obtain the perovskite top battery;
  • the second transparent conductive layer is bonded to the MXene material interconnection layer, and UV curing glue is applied around the connection interface between the second transparent conductive layer and the MXene material interconnection layer and irradiated with ultraviolet light After curing, the two-terminal tandem solar cell is prepared.
  • the two-terminal tandem solar cell provided by the embodiment of the present invention combines the perovskite bottom cell and the perovskite top cell in a mechanical stacking manner through the MXene material interconnection layer to form a full perovskite tandem solar cell: 1.
  • the MXene material layer is directly prepared on the perovskite bottom cell, the perovskite top cell is bonded to the perovskite bottom cell using mechanical stacking bonding after the preparation is completed, avoiding the traditional stacking at both ends.
  • MXene materials as the intermediate interconnection layer, the perovskite top battery and the perovskite bottom battery are bonded more closely, weakening the current loss caused by direct bonding, making the top battery and the bottom battery It can effectively perform electrical series connection and optical coupling; in addition, MXene materials have the characteristics of high conductivity and good light transmittance, which can reduce the optical and electrical parasitic losses of the battery, allowing the two-terminal tandem solar cells to have excellent performance.
  • Figure 1 is a schematic structural diagram of a two-terminal tandem solar cell according to an embodiment of the present invention
  • FIG. 2 is a diagram illustrating the manufacturing process of a two-terminal tandem solar cell according to an embodiment of the present invention.
  • Embodiments of the present invention first provide a two-terminal laminated solar cell based on MXene material interconnection.
  • the two-terminal tandem solar cell includes a perovskite bottom cell 10 , an MXene material interconnect layer 30 and a perovskite top cell 20 .
  • the MXene material interconnection layer 30 is deposited on the perovskite bottom cell 10 , and the perovskite top cell 20 is bonded to the MXene material interconnection layer 30 .
  • the material of the MXene material interconnect layer 30 is specifically Nb 2 CT x .
  • the thickness of the MXene material interconnection layer 30 is 50 nm to 200 nm.
  • the perovskite bottom cell 10 includes a first conductive glass substrate 11 , a first electron transport layer 12 , a first perovskite light absorption layer 13 , which are stacked in sequence.
  • the first hole transport layer 14 , the transport buffer layer 15 , the first transparent conductive layer 16 and the top electrode layer 17 , and the first lead-out electrode 18 is connected to the first conductive glass substrate 11 .
  • the perovskite top cell 20 includes a second conductive glass substrate 21, a second hole transport layer 22, a second perovskite light absorption layer 23, a second electron transport layer 24 and a second transparent conductive layer which are stacked in sequence. layer 25, and a second extraction electrode 26 is connected to the second conductive glass substrate 21.
  • the MXene material interconnection layer 30 is deposited on the top electrode layer 17, and the second transparent conductive layer 25 in the perovskite top cell 20 is bonded to the MXene material interconnection layer 30, that is, , the perovskite top cell 20 is bonded to the MXene material interconnect layer 30 in an inverted state.
  • the stacking positions of the first electron transport layer 12 and the first hole transport layer 14 in the perovskite bottom cell 10 can be interchanged, that is, the perovskite bottom cell 10
  • the bottom cell 10 includes a first conductive glass substrate 11, a first hole transport layer 14, a first perovskite light absorption layer 13, a first electron transport layer 12, a transport buffer layer 15, a first transparent conductive layer 15 and a first conductive glass substrate 11 which are stacked in sequence.
  • layer 16 and a top electrode layer 17, and a first lead-out electrode 18 is connected to the first conductive glass substrate 11.
  • the perovskite top cell 20 includes The second conductive glass substrate 21, the second electron transport layer 24, the second perovskite light absorption layer 23, the second hole transport layer 22 and the second transparent conductive layer 25 are stacked in sequence, and in the second The second extraction electrode 26 is connected to the conductive glass substrate 21 .
  • the first conductive glass substrate 11 is ITO conductive glass
  • the material of the first electron transport layer 12 is SnO 2
  • the The material of the first perovskite light absorption layer 13 is MA 0.72 FA 0.28 Pb(I 0.85 Cl 0.15 ) 3
  • the material of the first hole transport layer 14 is Spiro-OMeTAD
  • the material of the transmission buffer layer 15 is MoO x
  • the first transparent The material of the conductive layer 16 is IZO
  • the material of the top electrode layer 17 and the first extraction electrode 18 is Ag.
  • the first conductive glass substrate 11 has a thickness of 0.5 mm ⁇ 1 mm and has a 50 nm ⁇ 200 nm thick ITO conductive layer, and the thickness of the first electron transport layer 12 is 50nm ⁇ 100nm, the thickness of the first perovskite light absorption layer 13 is 300nm ⁇ 600nm, the thickness of the first hole transport layer 14 is 10nm ⁇ 100nm, and the thickness of the transmission buffer layer 15 is 10nm ⁇ 80nm.
  • the thickness of the first transparent conductive layer 16 is 50 nm to 200 nm, and the thickness of the top electrode layer 17 and the first extraction electrode 18 is respectively 30 nm to 150 nm.
  • the second conductive glass substrate 21 is ITO conductive glass
  • the material of the second hole transport layer 22 is PTAA
  • the The material of the second perovskite light absorption layer 23 is FA 0.65 MA 0.2 Cs 0.15 Pb(I 0.8 Br 0.2 ) 3 or FA 0.83 Cs 0.17 PbI 2.8 Cl 0.2
  • the material of the second electron transport layer 24 is SnO 2
  • the material of the second transparent conductive layer 25 is IZO
  • the material of the second extraction electrode 26 is Ag.
  • the thickness of the second conductive glass substrate 21 is 0.5 mm to 1 mm and has an ITO conductive layer of 50 nm to 200 nm, and the thickness of the second hole transport layer 22 is
  • the thickness of the second perovskite light absorption layer 23 is 300nm to 600nm
  • the thickness of the second electron transport layer 24 is 50nm to 100nm
  • the thickness of the second transparent conductive layer 25 is 50nm. ⁇ 200nm
  • the thickness of the second extraction electrode 26 is 30nm ⁇ 150nm.
  • Embodiments of the present invention also provide a method for preparing a two-terminal tandem solar cell as described above, which includes: first preparing the perovskite bottom cell 10 and the perovskite top cell 20 respectively; The MXene material interconnection layer 30 is deposited on the perovskite bottom cell 10; then the perovskite top cell 20 is bonded to the MXene material interconnection layer 30 and solidified and connected using curing glue.
  • the preparation of the two-terminal tandem solar cell includes the following steps:
  • Step S10 Provide a first conductive glass substrate 11, and sequentially prepare a stacked first electron transport layer 12, a first perovskite light absorption layer 13, and a first hole transport layer on the first conductive glass substrate 11.
  • a top electrode layer 17 is deposited on the first transparent conductive layer 16 and a first extraction electrode 18 (top electrode) is formed on the first conductive glass substrate 11. The layer 17 and the first extraction electrode 18 are deposited simultaneously) to obtain the perovskite bottom cell 10.
  • Step S20 Prepare and form the MXene material interconnection layer 30 on the top electrode layer 17 using a spin coating, spray coating or screen printing process.
  • Step S30 Provide a second conductive glass substrate 21, and sequentially prepare a stacked second hole transport layer 22, a second perovskite light absorption layer 23, and a second electron transport layer on the second conductive glass substrate 21.
  • layer 24 and a second transparent conductive layer 25, and a second extraction electrode 26 is formed on the second conductive glass substrate 21 to obtain the perovskite top cell 20.
  • Step S40 Bond the second transparent conductive layer 25 to the MXene material interconnection layer 30, and apply ultraviolet light around the connection interface between the second transparent conductive layer 25 and the MXene material interconnection layer 30.
  • the glue is cured and cured by ultraviolet light irradiation to prepare the two-terminal tandem solar cell.
  • the first hole transport layer 14 and the first perovskite light absorber may be sequentially formed on the first conductive glass substrate 11 layer 13, and then prepare and form the first electron transport layer 12 on the first perovskite light absorption layer 13, that is, the stacking positions of the first electron transport layer 12 and the first hole transport layer 14 are exchanged.
  • the step S20 of preparing the perovskite top cell 20 it is necessary to sequentially prepare and form the second electron transport layer 24 and the second perovskite light absorption layer 23 on the second conductive glass substrate 21.
  • a second hole transport layer 22 is formed on the second perovskite light absorption layer 23 , that is, the stacking positions of the second electron transport layer 24 and the second hole transport layer 22 are also interchanged.
  • This embodiment provides a two-terminal laminated solar cell based on MXene material interconnection and a preparation method thereof. Combined with Figure 1 and Figure 2, its specific preparation process includes the following steps:
  • Cleaning the ITO conductive glass substrate 11 Put the ITO conductive glass substrate 11 into Decon-90 aqueous solution, deionized water, and absolute ethanol for ultrasonic cleaning for 20 minutes respectively.
  • UV-O3 treatment of ITO conductive glass substrate 11 Place the cleaned ITO conductive glass substrate 11 in UV-Ozone for 15 to 30 minutes.
  • Step 14) Prepare the first perovskite light-absorbing layer 13 by a two-step method: Place the substrate obtained in step 13) in a glove box in an N 2 environment, and spin-coat 80 ⁇ L of PbI 2 /PbCl 2 mixed solution on the On the first electron transport layer 12, continue to spin-coat 80 ⁇ L of MAI/FAI mixed solution, and finally spin-coat the The substrate was placed on a hot stage at 100°C and annealed for 10 minutes, thereby preparing a first perovskite light absorption layer 13 made of MA 0.72 FA 0.28 Pb(I 0.85 Cl 0.15 ) 3 on the first electron transport layer 12 .
  • the PbI 2 /PbCl 2 mixed solution is prepared as follows: Dissolve 626.9 mg of PbI 2 powder and 66.7 mg of PbCl 2 powder in 1 mL of DMF (dimethylformamide), and stir at 72°C until completely dissolved. A PbI 2 /PbCl 2 mixed solution was obtained.
  • the MAI/FAI mixed solution is prepared as follows: Dissolve 70 mg of MAI (methylammonium iodide) powder and 30 mg of FAI (formamidine hydroiodide) powder in 1 mL of IPA (isopropyl alcohol) and 10 ⁇ L of DMF. solution, stir at room temperature until completely dissolved to obtain a MAI/FAI mixed solution.
  • Step 15) Prepare the first hole transport layer 14: Place the substrate obtained in step 14) in a glove box in an N2 environment, spin-coat 80 ⁇ L of Spiro-OMeTAD solution on the perovskite light-absorbing layer 13, and spin-coat After completion, the substrate is dried at room temperature, thereby preparing a first hole transport layer 14 made of Spiro-OMeTAD on the perovskite light absorption layer 13 .
  • the Spiro-OMeTAD solution is prepared as follows: Take 90 mg of Spiro-OMeTAD powder and dissolve it in 1 mL of CB (chlorobenzene), 45 ⁇ L Li salt (170 mg/ml), 75 ⁇ L Co salt (100 mg/ml) and 75 ⁇ L tBP. In the mixed solution, stir at room temperature until completely dissolved to obtain Spiro-OMeTAD solution.
  • Preparing the first transparent conductive layer 16 Using a magnetron sputtering process, deposit an IZO thin film layer with a thickness of 80 nm on the transmission buffer layer 15 to prepare the first transparent conductive layer 16 made of IZO.
  • top electrode layer 17 and the first lead-out electrode 18 Prepare the top electrode layer 17 and the first lead-out electrode 18: use an evaporation process to evaporate an Ag film with a thickness of 100 nm on the first transparent conductive layer 16 and the ITO conductive glass substrate 11 at the same time, so that on the first transparent conductive layer 16 A top electrode layer 17 made of Ag is prepared on the layer 16 , and a first extraction electrode 18 made of Ag is prepared on the ITO conductive glass substrate 11 .
  • a perovskite bottom battery 10 is prepared.
  • an MXene material interconnect layer 30 with a thickness of 100 nm was prepared on the top electrode layer 17 of the perovskite bottom cell 10 prepared above.
  • ITO conductive glass substrate 21 Provide another ITO conductive glass substrate 21, and perform cleaning treatment and UV-Ozone treatment with reference to the aforementioned steps 11) and 12).
  • Second hole transport layer 22 Place the ITO conductive glass substrate 21 in a glove box in an N2 environment, and use a glue spreader to spin-coat 80 ⁇ L of the PATT solution on the ITO conductive glass substrate 21. After the spin coating is completed Place it on a hot stage and anneal to prepare a second hole transport layer 22 made of PATT.
  • Preparation of the second lead-out electrode 26 Using an evaporation process, Ag is used as the material to prepare and form the second lead-out electrode 26 on the ITO conductive glass substrate 21.
  • a perovskite top battery 20 is prepared.
  • UV curing glue is applied and cured by UV irradiation to achieve mechanical stacking bonding of the perovskite bottom cell 10 and the perovskite top cell 20 to prepare the all-perovskite two-terminal tandem solar cell of this embodiment.
  • Example 2 The difference between Example 2 and Example 1 is that in Example 2, the MXene prepared in step 2 The thickness of material interconnection layer 30 is 50 nm.
  • the remaining process steps of Embodiment 2 are exactly the same as those of Embodiment 1, and therefore will not be described again.
  • Example 3 The difference between Example 3 and Example 1 is that in Example 3, step 23) prepares a second perovskite light-absorbing layer 23 made of FA 0.83 Cs 0.17 PbI 2.8 Cl 0.2 . Its preparation process is as follows:
  • DMF 500 ⁇ L
  • NMP 96 ⁇ L
  • step 22 Place the substrate obtained in step 22) in a glove box in an N2 environment, and use a glue leveler to spin-coat 85 ⁇ L of the precursor solution onto the second hole transport layer 22 at a rotation speed of 5000 rpm.
  • step-by-step annealing First transfer the spin-coated substrate to a hot stage at 70°C for annealing for 5 minutes, then transfer to an environment with a temperature of 25°C and a relative humidity of 40%, and anneal at a temperature of 150°C for 10 minutes. , thereby preparing a second perovskite light absorption layer 23 whose material is FA 0.83 Cs 0.17 PbI 2.8 Cl 0.2 on the second hole transport layer 22 .
  • Embodiment 3 The remaining process steps of Embodiment 3 are exactly the same as those of Embodiment 1, and therefore will not be described again.
  • the two-terminal tandem solar cell provided by the embodiment of the present invention combines the perovskite bottom cell and the perovskite top cell in a mechanical stacking manner through the MXene material interconnection layer to form a full perovskite stack.
  • Layer solar cells On the one hand, since the MXene material layer is directly prepared on the perovskite bottom cell, the perovskite top cell is bonded to the perovskite bottom cell using mechanical stacking bonding after the preparation is completed, avoiding the need for In the traditional two-terminal stacked battery process, additional processes are performed on the perovskite bottom cell, which solves the problem of damage to the performance of the bottom battery caused by high temperature, solution and other conditions in the traditional two-terminal stacked process, and reduces the cost of the two-terminal stacked battery.
  • the MXene materials as the intermediate interconnection layer, the perovskite top cell and the perovskite bottom cell are bonded more closely, weakening the current loss caused by direct bonding, making the top cell It can effectively perform electrical series connection and optical coupling with the bottom cell; in addition, the MXene material has the characteristics of high conductivity and good light transmittance, which can reduce the optical and electrical parasitic losses of the battery, making the two-terminal tandem solar cell can Has excellent performance.

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Abstract

Disclosed in the present invention is a two-terminal stacked solar cell based on MXene material interconnection, comprising a perovskite bottom cell, a MXene material interconnection layer, and a perovskite top cell. The MXene material interconnection layer is deposited on the perovskite bottom cell, and the perovskite top cell is bonded onto the MXene material interconnection layer. A preparation method for the two-terminal stacked solar cell comprises: respectively preparing the perovskite bottom cell and the perovskite top cell; depositing the MXene material interconnection layer on the perovskite bottom cell; and bonding the perovskite top cell to the MXene material interconnection layer, and connecting by curing a curable adhesive. According to the present invention, the perovskite bottom cell and the perovskite top cell are mechanically stacked to form the all-perovskite two-terminal stacked solar cell, electrical series connection and optical coupling between the top cell and the bottom cell can be effectively implemented, and the difficulty of the preparation process of stacked cells is reduced.

Description

基于MXene材料互联的两端式叠层太阳能电池及其制备方法Two-terminal tandem solar cells based on MXene material interconnection and preparation method thereof 技术领域Technical field
本发明涉及太阳能电池技术领域,具体涉及一种基于MXene材料互联的全钙钛矿两端式叠层太阳能电池及其制备方法。The invention relates to the technical field of solar cells, and in particular to a full perovskite two-terminal stacked solar cell based on MXene material interconnection and a preparation method thereof.
背景技术Background technique
有机/无机杂化钙钛矿材料由于具有优异的光电特性、低成本的制备方法而引起广泛关注,并得到快速发展和应用。根据已有的报道,钙钛矿材料在太阳电池的应用中,单结电池的效率已经达到25.7%,接近了目前主流的硅基太阳电池的最高效率。有机太阳电池与钙钛矿太阳电池类似,带隙与开路电压易于控制,但是单结电池的最高效率受到肖克利-奎伊瑟极限的限制,因此,为了进一步提升太阳电池的效率,叠层电池的探索成为了相关工作的必经之路,其中钙钛矿/有机叠层电池受到了广泛关注。Organic/inorganic hybrid perovskite materials have attracted widespread attention due to their excellent optoelectronic properties and low-cost preparation methods, and have been rapidly developed and applied. According to existing reports, in the application of perovskite materials in solar cells, the efficiency of single-junction cells has reached 25.7%, which is close to the highest efficiency of current mainstream silicon-based solar cells. Organic solar cells are similar to perovskite solar cells. The band gap and open circuit voltage are easy to control. However, the maximum efficiency of single-junction cells is limited by the Shockley-Quisser limit. Therefore, in order to further improve the efficiency of solar cells, stacked cells The exploration has become the only way for related work, among which perovskite/organic tandem batteries have received widespread attention.
由钙钛矿底电池和钙钛矿顶电池组成的全钙钛矿叠层太阳能电池可分为两端叠层和四端叠层,两者之间各有优势。其中,四端叠层电池需要制备两个完整且相互独立的电池结构,再将两个电池简单地叠加压合在一起,彼此间两个电池互不影响,但是增加了制备成本,另外过多过厚的叠层结构也会带来额外的光损失,对电池效率产生较大影响。两端叠层是在以钙钛矿底电池为衬底的基础上制备钙钛矿顶电池,主要的挑战在于:1)如何使得顶电池和底电池之间实现电学串联和光学耦合;2)以底电池为衬底制备顶电池,为了避免底电池损伤,顶电池的制备工艺受到较大限制,例如顶电池的工艺温度不能超过底电池的最高承受温度。Full-perovskite tandem solar cells composed of perovskite bottom cells and perovskite top cells can be divided into two-terminal stacks and four-terminal stacks, each with its own advantages. Among them, the four-terminal stacked battery requires the preparation of two complete and mutually independent battery structures, and then the two batteries are simply stacked and pressed together. The two batteries do not affect each other, but it increases the preparation cost, and there are too many An excessively thick stacked structure will also cause additional light loss and have a greater impact on cell efficiency. The two-terminal stack is to prepare a perovskite top cell based on a perovskite bottom cell as a substrate. The main challenge is: 1) How to achieve electrical series connection and optical coupling between the top cell and the bottom cell; 2) The top battery is prepared using the bottom battery as a substrate. In order to avoid damage to the bottom battery, the preparation process of the top battery is subject to greater restrictions. For example, the process temperature of the top battery cannot exceed the maximum withstand temperature of the bottom battery.
发明内容Contents of the invention
有鉴于此,本发明提供了一种基于MXene材料互联的两端式叠层太阳能电池及其制备方,使得钙钛矿底电池和钙钛矿顶电池之间能够有效地进行电学串联和光学耦合,并且降低全钙钛矿叠层电池的制备工艺难度。In view of this, the present invention provides a two-terminal laminated solar cell based on MXene material interconnection and a preparation method thereof, which enables effective electrical series connection and optical coupling between the perovskite bottom cell and the perovskite top cell. , and reduce the difficulty of the preparation process of all-perovskite tandem batteries.
为了实现上述目的,本发明采用了如下的技术方案:In order to achieve the above objects, the present invention adopts the following technical solutions:
一种基于MXene材料互联的两端式叠层太阳能电池,其包括钙钛矿底电池、MXene材料互联层和钙钛矿顶电池;所述MXene材料互联层沉积形成在所述钙 钛矿底电池上,所述钙钛矿顶电池键合结合在所述MXene材料互联层上。A two-terminal tandem solar cell based on MXene material interconnection, which includes a perovskite bottom cell, an MXene material interconnection layer and a perovskite top cell; the MXene material interconnection layer is deposited on the calcium On the titanium bottom cell, the perovskite top cell is bonded to the MXene material interconnect layer.
具体地,所述MXene材料互联层的材料具体是Nb2CTxSpecifically, the material of the MXene material interconnection layer is Nb 2 CT x .
具体地,所述MXene材料互联层的厚度为50nm~200nm。Specifically, the thickness of the MXene material interconnection layer is 50 nm to 200 nm.
在一个优选的方案中,所述钙钛矿底电池包括依次叠层设置的第一导电玻璃基底、第一电子传输层、第一钙钛矿光吸收层、第一空穴传输层、传输缓冲层、第一透明导电层和顶电极层,所述第一导电玻璃基底上连接有第一引出电极;所述钙钛矿顶电池包括依次叠层设置的第二导电玻璃基底、第二空穴传输层、第二钙钛矿光吸收层、第二电子传输层和第二透明导电层,所述第二导电玻璃基底上连接有第二引出电极;其中,所述MXene材料互联层沉积形成在所述顶电极层上,所述第二透明导电层键合结合在所述MXene材料互联层上。In a preferred solution, the perovskite bottom cell includes a first conductive glass substrate, a first electron transport layer, a first perovskite light absorption layer, a first hole transport layer, and a transmission buffer that are stacked in sequence. layer, a first transparent conductive layer and a top electrode layer, the first conductive glass substrate is connected to a first extraction electrode; the perovskite top cell includes a second conductive glass substrate, a second hole and a second conductive glass substrate that are stacked in sequence. The transmission layer, the second perovskite light absorption layer, the second electron transmission layer and the second transparent conductive layer, the second conductive glass substrate is connected to a second lead-out electrode; wherein, the MXene material interconnect layer is deposited and formed on On the top electrode layer, the second transparent conductive layer is bonded to the MXene material interconnect layer.
在另一个优选的方案中,所述钙钛矿底电池包括依次叠层设置的第一导电玻璃基底、第一空穴传输层、第一钙钛矿光吸收层、第一电子传输层、传输缓冲层、第一透明导电层和顶电极层,所述第一导电玻璃基底上连接有第一引出电极;所述钙钛矿顶电池包括依次叠层设置的第二导电玻璃基底、第二电子传输层、第二钙钛矿光吸收层、第二空穴传输层和第二透明导电层,所述第二导电玻璃基底上连接有第二引出电极;其中,所述MXene材料互联层沉积形成在所述顶电极层上,所述第二透明导电层键合结合在所述MXene材料互联层上。In another preferred solution, the perovskite bottom cell includes a first conductive glass substrate, a first hole transport layer, a first perovskite light absorption layer, a first electron transport layer, a transport layer, and a first conductive glass substrate, a first hole transport layer, and a first electron transport layer. Buffer layer, first transparent conductive layer and top electrode layer, the first conductive glass substrate is connected with a first extraction electrode; the perovskite top cell includes a second conductive glass substrate, a second electron conductor and a second conductive glass substrate that are stacked in sequence. A transmission layer, a second perovskite light absorption layer, a second hole transport layer and a second transparent conductive layer, and a second extraction electrode is connected to the second conductive glass substrate; wherein, the MXene material interconnect layer is deposited to form On the top electrode layer, the second transparent conductive layer is bonded to the MXene material interconnect layer.
具体地,所述钙钛矿底电池中,所述第一导电玻璃基底为ITO导电玻璃,所述第一电子传输层的材料为SnO2,所述第一钙钛矿光吸收层的材料为MA0.72FA0.28Pb(I0.85Cl0.15)3,所述第一空穴传输层的材料为Spiro-OMeTAD,所述传输缓冲层的材料为MoOx,第一透明导电层的材料为IZO,所述顶电极层和所述第一引出电极的材料为Ag;所述钙钛矿顶电池中,所述第二导电玻璃基底为ITO导电玻璃,所述第二空穴传输层的材料为PTAA,所述第二钙钛矿光吸收层的材料为FA0.65MA0.2Cs0.15Pb(I0.8Br0.2)3或FA0.83Cs0.17PbI2.8Cl0.2,所述第二电子传输层的材料为SnO2,所述第二透明导电层的材料为IZO,所述第二引出电极的材料为Ag。Specifically, in the perovskite bottom cell, the first conductive glass substrate is ITO conductive glass, the material of the first electron transport layer is SnO 2 , and the material of the first perovskite light absorption layer is MA 0.72 FA 0.28 Pb(I 0.85 Cl 0.15 ) 3 , the material of the first hole transport layer is Spiro-OMeTAD, the material of the transport buffer layer is MoO x , the material of the first transparent conductive layer is IZO, so The material of the top electrode layer and the first extraction electrode is Ag; in the perovskite top cell, the second conductive glass substrate is ITO conductive glass, and the material of the second hole transport layer is PTAA, The material of the second perovskite light absorption layer is FA 0.65 MA 0.2 Cs 0.15 Pb(I 0.8 Br 0.2 ) 3 or FA 0.83 Cs 0.17 PbI 2.8 Cl 0.2 , and the material of the second electron transport layer is SnO 2 , The material of the second transparent conductive layer is IZO, and the material of the second extraction electrode is Ag.
更具体地,所述钙钛矿底电池中,所述第一导电玻璃基底的厚度为0.5mm~1mm且具有50nm~200nm厚的ITO导电层,所述第一电子传输层的厚度为50nm~100nm,所述第一钙钛矿光吸收层的厚度为300nm~600nm,所述第一空穴传输层的厚度为10nm~100nm,所述传输缓冲层的厚度为10nm~80nm,第一透明导电层的厚度为50nm~200nm,所述顶电极层和所述第一引出电极的厚 度分别为30nm~150nm;所述钙钛矿顶电池中,所述第二导电玻璃基底的厚度为0.5mm~1mm且具有50nm~200nm厚的ITO导电层,所述第二空穴传输层的厚度为10nm~100nm,所述第二钙钛矿光吸收层的厚度为300nm~600nm,所述第二电子传输层的厚度为50nm~100nm,所述第二透明导电层的厚度为50nm~200nm,所述第二引出电极的厚度为30nm~150nm。More specifically, in the perovskite bottom battery, the thickness of the first conductive glass substrate is 0.5 mm ~ 1 mm and has a 50 nm ~ 200 nm thick ITO conductive layer, and the thickness of the first electron transport layer is 50 nm ~ 100nm, the thickness of the first perovskite light absorption layer is 300nm~600nm, the thickness of the first hole transport layer is 10nm~100nm, the thickness of the transmission buffer layer is 10nm~80nm, the first transparent conductive layer The thickness of the layer is 50nm~200nm, and the thickness of the top electrode layer and the first extraction electrode is The thickness is 30nm~150nm respectively; in the perovskite top cell, the thickness of the second conductive glass substrate is 0.5mm~1mm and has an ITO conductive layer with a thickness of 50nm~200nm, and the second hole transport layer is The thickness is 10nm~100nm, the thickness of the second perovskite light absorption layer is 300nm~600nm, the thickness of the second electron transport layer is 50nm~100nm, and the thickness of the second transparent conductive layer is 50nm~200nm. , the thickness of the second extraction electrode is 30nm~150nm.
如上所述的两端式叠层太阳能电池的制备方法,其包括:The preparation method of a two-terminal tandem solar cell as described above, which includes:
分别制备获得所述钙钛矿底电池和所述钙钛矿顶电池;Preparing and obtaining the perovskite bottom battery and the perovskite top battery respectively;
在所述钙钛矿底电池上沉积形成所述MXene材料互联层;Depositing and forming the MXene material interconnect layer on the perovskite bottom cell;
将所述钙钛矿顶电池键合在所述MXene材料互联层上并采用固化胶固化连接。The perovskite top cell is bonded to the MXene material interconnect layer and solidified and connected using curing glue.
在一个优选的方案中,所述两端式叠层太阳能电池的制备包括以下步骤:In a preferred solution, the preparation of the two-terminal tandem solar cell includes the following steps:
提供第一导电玻璃基底,在所述第一导电玻璃基底上依次制备形成叠层设置的第一电子传输层、第一钙钛矿光吸收层、第一空穴传输层、传输缓冲层和第一透明导电层,在所述第一透明导电层上沉积顶电极层并在所述第一导电玻璃基底上形成第一引出电极,获得所述钙钛矿底电池;Provide a first conductive glass substrate, and sequentially prepare a first electron transport layer, a first perovskite light absorption layer, a first hole transport layer, a transport buffer layer and a first stacked layer on the first conductive glass substrate. A transparent conductive layer, depositing a top electrode layer on the first transparent conductive layer and forming a first extraction electrode on the first conductive glass substrate to obtain the perovskite bottom battery;
应用旋涂、喷涂或丝网印刷工艺在所述顶电极层上制备形成所述MXene材料互联层;Apply spin coating, spray coating or screen printing process to prepare and form the MXene material interconnect layer on the top electrode layer;
提供第二导电玻璃基底,在所述第二导电玻璃基底上依次制备形成叠层设置的第二空穴传输层、第一钙钛矿光吸收层、第二电子传输层和第二透明导电层,并在所述第二导电玻璃基底上制备形成第二引出电极,获得所述钙钛矿顶电池;Provide a second conductive glass substrate, and sequentially prepare a stacked second hole transport layer, a first perovskite light absorption layer, a second electron transport layer and a second transparent conductive layer on the second conductive glass substrate , and prepare and form a second extraction electrode on the second conductive glass substrate to obtain the perovskite top battery;
将所述第二透明导电层键合结合在所述MXene材料互联层上,在所述第二透明导电层和所述MXene材料互联层连接界面的四周涂布紫外光固化胶并使用紫外光照射固化,制备获得所述两端式叠层太阳能电池。The second transparent conductive layer is bonded to the MXene material interconnection layer, and UV curing glue is applied around the connection interface between the second transparent conductive layer and the MXene material interconnection layer and irradiated with ultraviolet light After curing, the two-terminal tandem solar cell is prepared.
在一个优选的方案中,所述两端式叠层太阳能电池的方法包括以下步骤:In a preferred solution, the method for two-terminal tandem solar cells includes the following steps:
提供第一导电玻璃基底,在所述第一导电玻璃基底上依次制备形成叠层设置的第一空穴传输层、第一钙钛矿光吸收层、第一电子传输层、传输缓冲层和第一透明导电层,在所述第一透明导电层上沉积顶电极层并在所述第一导电玻璃基底上形成第一引出电极,获得所述钙钛矿底电池; A first conductive glass substrate is provided, and a first hole transport layer, a first perovskite light absorption layer, a first electron transport layer, a transport buffer layer and a first stacked layer are sequentially prepared on the first conductive glass substrate. A transparent conductive layer, depositing a top electrode layer on the first transparent conductive layer and forming a first extraction electrode on the first conductive glass substrate to obtain the perovskite bottom battery;
应用旋涂、喷涂或丝网印刷工艺在所述顶电极层上制备形成所述MXene材料互联层;Apply spin coating, spray coating or screen printing process to prepare and form the MXene material interconnect layer on the top electrode layer;
提供第二导电玻璃基底,在所述第二导电玻璃基底上依次制备形成叠层设置的第二电子传输层、第二钙钛矿光吸收层、第二空穴传输层和第二透明导电层,并在所述第二导电玻璃基底上制备形成第二引出电极,获得所述钙钛矿顶电池;A second conductive glass substrate is provided, and a second electron transport layer, a second perovskite light absorption layer, a second hole transport layer and a second transparent conductive layer formed in a stack are sequentially prepared on the second conductive glass substrate. , and prepare and form a second extraction electrode on the second conductive glass substrate to obtain the perovskite top battery;
将所述第二透明导电层键合结合在所述MXene材料互联层上,在所述第二透明导电层和所述MXene材料互联层连接界面的四周涂布紫外光固化胶并使用紫外光照射固化,制备获得所述两端式叠层太阳能电池。The second transparent conductive layer is bonded to the MXene material interconnection layer, and UV curing glue is applied around the connection interface between the second transparent conductive layer and the MXene material interconnection layer and irradiated with ultraviolet light After curing, the two-terminal tandem solar cell is prepared.
本发明实施例提供的两端式叠层太阳能电池,通过MXene材料互联层将钙钛矿底电池和钙钛矿顶电池以机械堆叠的方式结合在一起形成全钙钛矿叠层太阳能电池:一方面,由于MXene材料层是直接制备在钙钛矿底电池上,钙钛矿顶电池在制备完成之后再采用机械堆叠的键合方式结合到钙钛矿底电池上,避免了传统的两端叠层电池工艺中在钙钛矿底电池上进行额外的工艺,解决了传统两端叠层工艺中高温、溶液等条件对底电池性能造成损伤的问题,降低了两端式叠层太阳能电池的制备工艺难度;另一方面,采用MXene材料作为中间互联层,钙钛矿顶电池与钙钛矿底电池的键合更加紧密,削弱了直接键合造成的电流损失,使得顶电池和底电池之间能够有效地进行电学串联和光学耦合;另外,MXene材料具有电导率高、透光性好等特点,可降低电池的光学、电学寄生损失,使得两端式叠层太阳能电池可以具备优异的性能。The two-terminal tandem solar cell provided by the embodiment of the present invention combines the perovskite bottom cell and the perovskite top cell in a mechanical stacking manner through the MXene material interconnection layer to form a full perovskite tandem solar cell: 1. On the other hand, since the MXene material layer is directly prepared on the perovskite bottom cell, the perovskite top cell is bonded to the perovskite bottom cell using mechanical stacking bonding after the preparation is completed, avoiding the traditional stacking at both ends. In the layer cell process, additional processes are carried out on the perovskite bottom cell, which solves the problem of damage to the performance of the bottom cell caused by high temperature, solution and other conditions in the traditional two-terminal stacking process, and reduces the preparation of two-terminal stacked solar cells. Process difficulty; on the other hand, using MXene materials as the intermediate interconnection layer, the perovskite top battery and the perovskite bottom battery are bonded more closely, weakening the current loss caused by direct bonding, making the top battery and the bottom battery It can effectively perform electrical series connection and optical coupling; in addition, MXene materials have the characteristics of high conductivity and good light transmittance, which can reduce the optical and electrical parasitic losses of the battery, allowing the two-terminal tandem solar cells to have excellent performance.
附图说明Description of drawings
图1是本发明实施例的两端式叠层太阳能电池的结构示意图;Figure 1 is a schematic structural diagram of a two-terminal tandem solar cell according to an embodiment of the present invention;
图2是本发明实施例的两端式叠层太阳能电池的制备工艺过程图示。FIG. 2 is a diagram illustrating the manufacturing process of a two-terminal tandem solar cell according to an embodiment of the present invention.
具体实施方式Detailed ways
为使本发明的目的、技术方案和优点更加清楚,下面结合附图对本发明的具体实施方式进行详细说明。这些优选实施方式的示例在附图中进行了例示。附图中所示和根据附图描述的本发明的实施方式仅仅是示例性的,并且本发明并不限于这些实施方式。In order to make the purpose, technical solutions and advantages of the present invention clearer, specific implementation modes of the present invention will be described in detail below with reference to the accompanying drawings. Examples of these preferred embodiments are illustrated in the accompanying drawings. The embodiments of the invention shown in and described with reference to the drawings are merely exemplary and the invention is not limited to these embodiments.
在此,还需要说明的是,为了避免因不必要的细节而模糊了本发明,在附图中仅仅示出了与根据本发明的方案密切相关的结构和/或处理步骤,而省略了 与本发明关系不大的其他细节。Here, it should also be noted that, in order to avoid obscuring the present invention with unnecessary details, only the structures and/or processing steps closely related to the solution according to the present invention are shown in the drawings, and omitted. Other details less relevant to the invention.
本发明实施例首先提供一种基于MXene材料互联的两端式叠层太阳能电池。如图1所示,所述两端式叠层太阳能电池包括钙钛矿底电池10、MXene材料互联层30和钙钛矿顶电池20。其中,MXene材料互联层30沉积形成在所述钙钛矿底电池10上,所述钙钛矿顶电池20键合结合在MXene材料互联层30上。Embodiments of the present invention first provide a two-terminal laminated solar cell based on MXene material interconnection. As shown in FIG. 1 , the two-terminal tandem solar cell includes a perovskite bottom cell 10 , an MXene material interconnect layer 30 and a perovskite top cell 20 . The MXene material interconnection layer 30 is deposited on the perovskite bottom cell 10 , and the perovskite top cell 20 is bonded to the MXene material interconnection layer 30 .
优选地,所述MXene材料互联层30的材料具体是Nb2CTx。所述MXene材料互联层30的厚度为50nm~200nm。Preferably, the material of the MXene material interconnect layer 30 is specifically Nb 2 CT x . The thickness of the MXene material interconnection layer 30 is 50 nm to 200 nm.
在本实施例中,如图1所示,所述钙钛矿底电池10包括依次叠层设置的第一导电玻璃基底11、第一电子传输层12、第一钙钛矿光吸收层13、第一空穴传输层14、传输缓冲层15、第一透明导电层16和顶电极层17,并且所述第一导电玻璃基底11上连接有第一引出电极18。所述钙钛矿顶电池20包括依次叠层设置的第二导电玻璃基底21、第二空穴传输层22、第二钙钛矿光吸收层23、第二电子传输层24和第二透明导电层25,并且所述第二导电玻璃基底21上连接有第二引出电极26。In this embodiment, as shown in FIG. 1 , the perovskite bottom cell 10 includes a first conductive glass substrate 11 , a first electron transport layer 12 , a first perovskite light absorption layer 13 , which are stacked in sequence. The first hole transport layer 14 , the transport buffer layer 15 , the first transparent conductive layer 16 and the top electrode layer 17 , and the first lead-out electrode 18 is connected to the first conductive glass substrate 11 . The perovskite top cell 20 includes a second conductive glass substrate 21, a second hole transport layer 22, a second perovskite light absorption layer 23, a second electron transport layer 24 and a second transparent conductive layer which are stacked in sequence. layer 25, and a second extraction electrode 26 is connected to the second conductive glass substrate 21.
其中,所述MXene材料互联层30沉积形成在所述顶电极层17上,所述钙钛矿顶电池20中的第二透明导电层25键合结合在所述MXene材料互联层30上,即,所述钙钛矿顶电池20是呈倒置的状态键合结合在所述MXene材料互联层30上。Wherein, the MXene material interconnection layer 30 is deposited on the top electrode layer 17, and the second transparent conductive layer 25 in the perovskite top cell 20 is bonded to the MXene material interconnection layer 30, that is, , the perovskite top cell 20 is bonded to the MXene material interconnect layer 30 in an inverted state.
在另外的实施例中,参考图1,所述钙钛矿底电池10中的第一电子传输层12和第一空穴传输层14的叠层位置可以互换,即,所述钙钛矿底电池10包括依次叠层设置的第一导电玻璃基底11、第一空穴传输层14、第一钙钛矿光吸收层13、第一电子传输层12、传输缓冲层15、第一透明导电层16和顶电极层17,并且在所述第一导电玻璃基底11上连接有第一引出电极18。此时,相应的,所述钙钛矿顶电池20中的第二电子传输层24和第二空穴传输层22的叠层位置也需要互换,即,所述钙钛矿顶电池20包括依次叠层设置的第二导电玻璃基底21、第二电子传输层24、第二钙钛矿光吸收层23、第二空穴传输层22和第二透明导电层25,并且在所述第二导电玻璃基底21上连接有第二引出电极26。In other embodiments, referring to FIG. 1 , the stacking positions of the first electron transport layer 12 and the first hole transport layer 14 in the perovskite bottom cell 10 can be interchanged, that is, the perovskite bottom cell 10 The bottom cell 10 includes a first conductive glass substrate 11, a first hole transport layer 14, a first perovskite light absorption layer 13, a first electron transport layer 12, a transport buffer layer 15, a first transparent conductive layer 15 and a first conductive glass substrate 11 which are stacked in sequence. layer 16 and a top electrode layer 17, and a first lead-out electrode 18 is connected to the first conductive glass substrate 11. At this time, correspondingly, the stacking positions of the second electron transport layer 24 and the second hole transport layer 22 in the perovskite top cell 20 also need to be interchanged, that is, the perovskite top cell 20 includes The second conductive glass substrate 21, the second electron transport layer 24, the second perovskite light absorption layer 23, the second hole transport layer 22 and the second transparent conductive layer 25 are stacked in sequence, and in the second The second extraction electrode 26 is connected to the conductive glass substrate 21 .
作为优选的技术方案,本实施例中,所述钙钛矿底电池10中:所述第一导电玻璃基底11为ITO导电玻璃,所述第一电子传输层12的材料为SnO2,所述第一钙钛矿光吸收层13的材料为MA0.72FA0.28Pb(I0.85Cl0.15)3,所述第一空穴传输层14的材料为Spiro-OMeTAD,所述传输缓冲层15的材料为MoOx,第一透明 导电层16的材料为IZO,所述顶电极层17和所述第一引出电极18的材料为Ag。As a preferred technical solution, in this embodiment, in the perovskite bottom cell 10: the first conductive glass substrate 11 is ITO conductive glass, the material of the first electron transport layer 12 is SnO 2 , and the The material of the first perovskite light absorption layer 13 is MA 0.72 FA 0.28 Pb(I 0.85 Cl 0.15 ) 3 , the material of the first hole transport layer 14 is Spiro-OMeTAD, and the material of the transmission buffer layer 15 is MoO x , the first transparent The material of the conductive layer 16 is IZO, and the material of the top electrode layer 17 and the first extraction electrode 18 is Ag.
进一步地,所述钙钛矿底电池10中:所述第一导电玻璃基底11的厚度为0.5mm~1mm且具有50nm~200nm厚的ITO导电层,所述第一电子传输层12的厚度为50nm~100nm,所述第一钙钛矿光吸收层13的厚度为300nm~600nm,所述第一空穴传输层14的厚度为10nm~100nm,所述传输缓冲层15的厚度为10nm~80nm,第一透明导电层16的厚度为50nm~200nm,所述顶电极层17和所述第一引出电极18的厚度分别为30nm~150nm。Further, in the perovskite bottom battery 10: the first conductive glass substrate 11 has a thickness of 0.5 mm ~ 1 mm and has a 50 nm ~ 200 nm thick ITO conductive layer, and the thickness of the first electron transport layer 12 is 50nm~100nm, the thickness of the first perovskite light absorption layer 13 is 300nm~600nm, the thickness of the first hole transport layer 14 is 10nm~100nm, and the thickness of the transmission buffer layer 15 is 10nm~80nm. The thickness of the first transparent conductive layer 16 is 50 nm to 200 nm, and the thickness of the top electrode layer 17 and the first extraction electrode 18 is respectively 30 nm to 150 nm.
作为优选的技术方案,本实施例中,所述钙钛矿顶电池20中:所述第二导电玻璃基底21为ITO导电玻璃,所述第二空穴传输层22的材料为PTAA,所述第二钙钛矿光吸收层23的材料为FA0.65MA0.2Cs0.15Pb(I0.8Br0.2)3或FA0.83Cs0.17PbI2.8Cl0.2,所述第二电子传输层24的材料为SnO2,所述第二透明导电层25的材料为IZO,所述第二引出电极26的材料为Ag。As a preferred technical solution, in this embodiment, in the perovskite top cell 20: the second conductive glass substrate 21 is ITO conductive glass, the material of the second hole transport layer 22 is PTAA, and the The material of the second perovskite light absorption layer 23 is FA 0.65 MA 0.2 Cs 0.15 Pb(I 0.8 Br 0.2 ) 3 or FA 0.83 Cs 0.17 PbI 2.8 Cl 0.2 , and the material of the second electron transport layer 24 is SnO 2 , The material of the second transparent conductive layer 25 is IZO, and the material of the second extraction electrode 26 is Ag.
进一步地,所述钙钛矿顶电池10中,所述第二导电玻璃基底21的厚度为0.5mm~1mm且具有50nm~200nm厚的ITO导电层,所述第二空穴传输层22的厚度为10nm~100nm,所述第二钙钛矿光吸收层23的厚度为300nm~600nm,所述第二电子传输层24的厚度为50nm~100nm,所述第二透明导电层25的厚度为50nm~200nm,所述第二引出电极26的厚度为30nm~150nm。Further, in the perovskite top cell 10, the thickness of the second conductive glass substrate 21 is 0.5 mm to 1 mm and has an ITO conductive layer of 50 nm to 200 nm, and the thickness of the second hole transport layer 22 is The thickness of the second perovskite light absorption layer 23 is 300nm to 600nm, the thickness of the second electron transport layer 24 is 50nm to 100nm, and the thickness of the second transparent conductive layer 25 is 50nm. ~200nm, and the thickness of the second extraction electrode 26 is 30nm ~ 150nm.
本发明实施例还提供了如上所述的两端式叠层太阳能电池的制备方法,其包括:首先分别制备获得所述钙钛矿底电池10和所述钙钛矿顶电池20;然后在所述钙钛矿底电池10上沉积形成所述MXene材料互联层30;接着将所述钙钛矿顶电池20键合在所述MXene材料互联层30上并采用固化胶固化连接。Embodiments of the present invention also provide a method for preparing a two-terminal tandem solar cell as described above, which includes: first preparing the perovskite bottom cell 10 and the perovskite top cell 20 respectively; The MXene material interconnection layer 30 is deposited on the perovskite bottom cell 10; then the perovskite top cell 20 is bonded to the MXene material interconnection layer 30 and solidified and connected using curing glue.
具体地,本实施例中,参阅图2,所述两端式叠层太阳能电池的制备包括以下步骤:Specifically, in this embodiment, referring to Figure 2, the preparation of the two-terminal tandem solar cell includes the following steps:
步骤S10、提供第一导电玻璃基底11,在所述第一导电玻璃基底11上依次制备形成叠层设置的第一电子传输层12、第一钙钛矿光吸收层13、第一空穴传输层14、传输缓冲层15和第一透明导电层16,在所述第一透明导电层16上沉积顶电极层17并在所述第一导电玻璃基底11上形成第一引出电极18(顶电极层17和第一引出电极18同时沉积形成),获得所述钙钛矿底电池10。Step S10: Provide a first conductive glass substrate 11, and sequentially prepare a stacked first electron transport layer 12, a first perovskite light absorption layer 13, and a first hole transport layer on the first conductive glass substrate 11. layer 14, a transmission buffer layer 15 and a first transparent conductive layer 16. A top electrode layer 17 is deposited on the first transparent conductive layer 16 and a first extraction electrode 18 (top electrode) is formed on the first conductive glass substrate 11. The layer 17 and the first extraction electrode 18 are deposited simultaneously) to obtain the perovskite bottom cell 10.
步骤S20、应用旋涂、喷涂或丝网印刷工艺在所述顶电极层17上制备形成所述MXene材料互联层30。 Step S20: Prepare and form the MXene material interconnection layer 30 on the top electrode layer 17 using a spin coating, spray coating or screen printing process.
步骤S30、提供第二导电玻璃基底21,在所述第二导电玻璃基底21上依次制备形成叠层设置的第二空穴传输层22、第二钙钛矿光吸收层23、第二电子传输层24和第二透明导电层25,并在所述第二导电玻璃基底21上制备形成第二引出电极26,获得所述钙钛矿顶电池20。Step S30: Provide a second conductive glass substrate 21, and sequentially prepare a stacked second hole transport layer 22, a second perovskite light absorption layer 23, and a second electron transport layer on the second conductive glass substrate 21. layer 24 and a second transparent conductive layer 25, and a second extraction electrode 26 is formed on the second conductive glass substrate 21 to obtain the perovskite top cell 20.
步骤S40、将所述第二透明导电层25键合结合在所述MXene材料互联层30上,在所述第二透明导电层25和所述MXene材料互联层30连接界面的四周涂布紫外光固化胶并使用紫外光照射固化,制备获得所述两端式叠层太阳能电池。Step S40: Bond the second transparent conductive layer 25 to the MXene material interconnection layer 30, and apply ultraviolet light around the connection interface between the second transparent conductive layer 25 and the MXene material interconnection layer 30. The glue is cured and cured by ultraviolet light irradiation to prepare the two-terminal tandem solar cell.
在另外的一些实施例中,在制备钙钛矿底电池10的步骤S10中,也可以是在第一导电玻璃基底11先依次制备形成第一空穴传输层14和第一钙钛矿光吸收层13,然后在第一钙钛矿光吸收层13上制备形成第一电子传输层12,即第一电子传输层12和第一空穴传输层14的叠层位置互换。并且,相应的,在制备钙钛矿顶电池20的步骤S20中,需要在所述第二导电玻璃基底21上先依次制备形成第二电子传输层24和第二钙钛矿光吸收层23,然后在第二钙钛矿光吸收层23上制备形成第二空穴传输层22,即第二电子传输层24和第二空穴传输层22的叠层位置也互换。In some other embodiments, in step S10 of preparing the perovskite bottom cell 10 , the first hole transport layer 14 and the first perovskite light absorber may be sequentially formed on the first conductive glass substrate 11 layer 13, and then prepare and form the first electron transport layer 12 on the first perovskite light absorption layer 13, that is, the stacking positions of the first electron transport layer 12 and the first hole transport layer 14 are exchanged. And correspondingly, in the step S20 of preparing the perovskite top cell 20, it is necessary to sequentially prepare and form the second electron transport layer 24 and the second perovskite light absorption layer 23 on the second conductive glass substrate 21. Then, a second hole transport layer 22 is formed on the second perovskite light absorption layer 23 , that is, the stacking positions of the second electron transport layer 24 and the second hole transport layer 22 are also interchanged.
实施例1Example 1
本实施例提供一种基于MXene材料互联的两端式叠层太阳能电池及其制备方法。结合图1和图2,其具体的制备工艺包括以下步骤:This embodiment provides a two-terminal laminated solar cell based on MXene material interconnection and a preparation method thereof. Combined with Figure 1 and Figure 2, its specific preparation process includes the following steps:
一、制备钙钛矿底电池1. Preparation of perovskite bottom battery
11)清洗ITO导电玻璃基底11:将ITO导电玻璃基底11依次放入Decon-90水溶液、去离子水、无水乙醇中分别超声清洗20min。11) Cleaning the ITO conductive glass substrate 11: Put the ITO conductive glass substrate 11 into Decon-90 aqueous solution, deionized water, and absolute ethanol for ultrasonic cleaning for 20 minutes respectively.
12)UV-O3处理ITO导电玻璃基底11:将清洗过的ITO导电玻璃基底11放在UV-Ozone中处理15~30min。12) UV-O3 treatment of ITO conductive glass substrate 11: Place the cleaned ITO conductive glass substrate 11 in UV-Ozone for 15 to 30 minutes.
13)制备第一电子传输层12:将80μL的SnO2溶胶在空气环境中以3000rpm的转速,用时30s旋涂在UV-Ozone处理后的ITO导电玻璃基底11上,并置于热台上以空气氛围150℃退火30min,得到材料为SnO2的第一电子传输层12。13) Prepare the first electron transport layer 12: Spin-coat 80 μL of SnO 2 sol on the UV-Ozone-treated ITO conductive glass substrate 11 at a rotation speed of 3000 rpm for 30 seconds in an air environment, and place it on a hot stage. Annealing was performed at 150°C for 30 minutes in an air atmosphere to obtain the first electron transport layer 12 made of SnO 2 .
14)两步法制备第一钙钛矿光吸收层13:将步骤13)获得的基底置于N2环境的手套箱中,使用匀胶机将80μL的PbI2/PbCl2混合溶液旋涂在第一电子传输层12上,随后再继续旋涂80μL的MAI/FAI混合溶液,最后将旋涂完成后的 基底置于100℃热台上退火10min,由此在第一电子传输层12上制备获得材料为MA0.72FA0.28Pb(I0.85Cl0.15)3的第一钙钛矿光吸收层13。14) Prepare the first perovskite light-absorbing layer 13 by a two-step method: Place the substrate obtained in step 13) in a glove box in an N 2 environment, and spin-coat 80 μL of PbI 2 /PbCl 2 mixed solution on the On the first electron transport layer 12, continue to spin-coat 80 μL of MAI/FAI mixed solution, and finally spin-coat the The substrate was placed on a hot stage at 100°C and annealed for 10 minutes, thereby preparing a first perovskite light absorption layer 13 made of MA 0.72 FA 0.28 Pb(I 0.85 Cl 0.15 ) 3 on the first electron transport layer 12 .
其中,PbI2/PbCl2混合溶液按以下方法制备:取质量为626.9mg的PbI2粉末和66.7mg PbCl2粉末溶于1mL的DMF(二甲基甲酰胺)中,72℃下搅拌直至完全溶解得到PbI2/PbCl2混合溶液。MAI/FAI混合溶液按以下方法制备:取质量为70mg的MAI(甲基碘化胺)粉末和30mg FAI(甲脒氢碘酸盐)粉末溶于1mL的IPA(异丙醇)和10μL DMF混合溶液中,常温下搅拌直至完全溶解得到MAI/FAI混合溶液。Among them, the PbI 2 /PbCl 2 mixed solution is prepared as follows: Dissolve 626.9 mg of PbI 2 powder and 66.7 mg of PbCl 2 powder in 1 mL of DMF (dimethylformamide), and stir at 72°C until completely dissolved. A PbI 2 /PbCl 2 mixed solution was obtained. The MAI/FAI mixed solution is prepared as follows: Dissolve 70 mg of MAI (methylammonium iodide) powder and 30 mg of FAI (formamidine hydroiodide) powder in 1 mL of IPA (isopropyl alcohol) and 10 μL of DMF. solution, stir at room temperature until completely dissolved to obtain a MAI/FAI mixed solution.
15)制备第一空穴传输层14:将步骤14)获得的基底置于N2环境的手套箱中,将80μL的Spiro-OMeTAD溶液旋涂在钙钛矿光吸收层13层上,旋涂结束后的将基底置于室温条件下干燥,由此在钙钛矿光吸收层13上制备获得材料为Spiro-OMeTAD的第一空穴传输层14。15) Prepare the first hole transport layer 14: Place the substrate obtained in step 14) in a glove box in an N2 environment, spin-coat 80 μL of Spiro-OMeTAD solution on the perovskite light-absorbing layer 13, and spin-coat After completion, the substrate is dried at room temperature, thereby preparing a first hole transport layer 14 made of Spiro-OMeTAD on the perovskite light absorption layer 13 .
其中,Spiro-OMeTAD溶液按照以下方法制备:取质量为90mg的Spiro-OMeTAD粉末溶于1mL的CB(氯苯)、45μL Li盐(170mg/ml)、75μL Co盐(100mg/ml)和75μL tBP混合溶液中,常温下搅拌直至完全溶解,得到Spiro-OMeTAD溶液。Among them, the Spiro-OMeTAD solution is prepared as follows: Take 90 mg of Spiro-OMeTAD powder and dissolve it in 1 mL of CB (chlorobenzene), 45 μL Li salt (170 mg/ml), 75 μL Co salt (100 mg/ml) and 75 μL tBP. In the mixed solution, stir at room temperature until completely dissolved to obtain Spiro-OMeTAD solution.
16)制备传输缓冲层15:采用蒸镀工艺,在第一空穴传输层14上沉积厚度为30nm的MoOx薄膜层,制备获得材料为MoOx的传输缓冲层15。16) Prepare the transmission buffer layer 15: Use an evaporation process to deposit a MoO x thin film layer with a thickness of 30 nm on the first hole transport layer 14 to prepare a transmission buffer layer 15 made of MoO x .
17)制第一透明导电层16:采用磁控溅射工艺,在传输缓冲层15上沉积厚度为80nm的IZO薄膜层,制备获得材料为IZO的第一透明导电层16。17) Preparing the first transparent conductive layer 16: Using a magnetron sputtering process, deposit an IZO thin film layer with a thickness of 80 nm on the transmission buffer layer 15 to prepare the first transparent conductive layer 16 made of IZO.
18)制备顶电极层17和第一引出电极18:采用蒸镀工艺,在第一透明导电层16和ITO导电玻璃基底11上同时蒸镀厚度为100nm的Ag薄膜,由此在第一透明导电层16上制备获得材料为Ag的顶电极层17,并在ITO导电玻璃基底11制备获得材料为Ag的第一引出电极18。18) Prepare the top electrode layer 17 and the first lead-out electrode 18: use an evaporation process to evaporate an Ag film with a thickness of 100 nm on the first transparent conductive layer 16 and the ITO conductive glass substrate 11 at the same time, so that on the first transparent conductive layer 16 A top electrode layer 17 made of Ag is prepared on the layer 16 , and a first extraction electrode 18 made of Ag is prepared on the ITO conductive glass substrate 11 .
基于以上步骤11)~18),制备获得钙钛矿底电池10。Based on the above steps 11) to 18), a perovskite bottom battery 10 is prepared.
二、制备MXene材料互联层2. Preparation of MXene material interconnection layer
采用静电纺丝工艺,在以上制备获得的钙钛矿底电池10的顶电极层17上制备获得厚度为100nm的MXene材料互联层30。Using an electrospinning process, an MXene material interconnect layer 30 with a thickness of 100 nm was prepared on the top electrode layer 17 of the perovskite bottom cell 10 prepared above.
三、制备钙钛矿顶电池 3. Preparation of perovskite top cells
21)提供另一个ITO导电玻璃基底21,并参照前述步骤11)和12)进行清洗处理和UV-Ozone处理。21) Provide another ITO conductive glass substrate 21, and perform cleaning treatment and UV-Ozone treatment with reference to the aforementioned steps 11) and 12).
22)制备第二空穴传输层22:将ITO导电玻璃基底21置于N2环境的手套箱中,使用匀胶机将80μL的PATT溶液旋涂在ITO导电玻璃基底21上,旋涂结束后置于热台上退火,制备获得材料为PATT的第二空穴传输层22。22) Prepare the second hole transport layer 22: Place the ITO conductive glass substrate 21 in a glove box in an N2 environment, and use a glue spreader to spin-coat 80 μL of the PATT solution on the ITO conductive glass substrate 21. After the spin coating is completed Place it on a hot stage and anneal to prepare a second hole transport layer 22 made of PATT.
23)制备第二钙钛矿光吸收层23:将145.3mg的FAI,29.1mg的MABr,50.7mg的CsI,479.4mg的PbI2,95.4mg的PbBr2和3.4mg的Pb(SCN)2溶于1mL二甲基甲酰胺(DMF)和N-甲基吡咯烷酮(NMP)的混合溶剂中,其中DMF和NMP的体积比为4:1,在常温下搅拌直至完全溶解得到FA0.65MA0.2Cs0.15Pb(I0.8Br0.2)3溶液;将步骤22)处理后的基底置于N2环境的手套箱中,使用匀胶机将FA0.65MA0.2Cs0.15Pb(I0.8Br0.2)3溶液旋涂在第二空穴传输层22上,旋涂结束后置于热台上退火,制备获得材料为FA0.65MA0.2Cs0.15Pb(I0.8Br0.2)3的第二钙钛矿光吸收层23。23) Prepare the second perovskite light absorption layer 23: dissolve 145.3 mg FAI, 29.1 mg MABr, 50.7 mg CsI, 479.4 mg PbI 2 , 95.4 mg PbBr 2 and 3.4 mg Pb(SCN) 2 In 1mL of a mixed solvent of dimethylformamide (DMF) and N-methylpyrrolidone (NMP), the volume ratio of DMF to NMP is 4:1, stir at room temperature until completely dissolved to obtain FA 0.65 MA 0.2 Cs 0.15 Pb(I 0.8 Br 0.2 ) 3 solution; place the substrate treated in step 22) in a glove box in an N 2 environment, and use a glue leveler to spin-coat FA 0.65 MA 0.2 Cs 0.15 Pb(I 0.8 Br 0.2 ) 3 solution On the second hole transport layer 22, after the spin coating is completed, it is placed on a hot table and annealed to prepare a second perovskite light absorption layer 23 made of FA 0.65 MA 0.2 Cs 0.15 Pb(I 0.8 Br 0.2 ) 3 .
24)制备第二电子传输层24:采用原子层沉积工艺,以为SnO2沉积材料,在第二钙钛矿光吸收层23上沉积SnO2薄膜层,制备获得材料为SnO2的第二电子传输层24。24) Prepare the second electron transport layer 24: Use an atomic layer deposition process to deposit a material for SnO 2 , deposit a SnO 2 thin film layer on the second perovskite light absorption layer 23, and prepare a second electron transport layer whose material is SnO 2 Layer 24.
25)制备第二透明导电层25:采用磁控溅射工艺,在第二电子传输层24上沉积厚度为80nm的IZO薄膜层,制备获得材料为IZO的第二透明导电层25。25) Prepare the second transparent conductive layer 25: Use a magnetron sputtering process to deposit an IZO thin film layer with a thickness of 80 nm on the second electron transport layer 24 to prepare a second transparent conductive layer 25 made of IZO.
26)制备第二引出电极26:采用蒸镀工艺,以Ag为材料,在ITO导电玻璃基底21上制备形成第二引出电极26。26) Preparation of the second lead-out electrode 26: Using an evaporation process, Ag is used as the material to prepare and form the second lead-out electrode 26 on the ITO conductive glass substrate 21.
基于以上步骤21)~26),制备获得钙钛矿顶电池20。Based on the above steps 21) to 26), a perovskite top battery 20 is prepared.
四、钙钛矿底电池与钙钛矿顶电池的机械堆叠键合4. Mechanical stacking bonding of perovskite bottom cells and perovskite top cells
将钙钛矿顶电池20倒置,使钙钛矿顶电池20的第二透明导电层25贴合在MXene材料互联层30上,在第二透明导电层25和MXene材料互联层30连接界面的四周涂布紫外光固化胶并用紫外光照射固化,实现钙钛矿底电池10与钙钛矿顶电池20的机械堆叠键合,制备获得本实施例的全钙钛矿两端式叠层太阳能电池。Turn the perovskite top cell 20 upside down, so that the second transparent conductive layer 25 of the perovskite top cell 20 is attached to the MXene material interconnection layer 30, around the connection interface between the second transparent conductive layer 25 and the MXene material interconnection layer 30. UV curing glue is applied and cured by UV irradiation to achieve mechanical stacking bonding of the perovskite bottom cell 10 and the perovskite top cell 20 to prepare the all-perovskite two-terminal tandem solar cell of this embodiment.
实施例2Example 2
实施例2与实施例1的不同之处在于:实施例2中,步骤二制备的MXene 材料互联层30的厚度为50nm。实施例2的其余工艺步骤与实施例1的完全相同,因此不再赘述。The difference between Example 2 and Example 1 is that in Example 2, the MXene prepared in step 2 The thickness of material interconnection layer 30 is 50 nm. The remaining process steps of Embodiment 2 are exactly the same as those of Embodiment 1, and therefore will not be described again.
实施例3Example 3
实施例3与实施例1的不同之处在于:实施例3中,步骤23)制备获得材料为FA0.83Cs0.17PbI2.8Cl0.2的第二钙钛矿光吸收层23。其制备工艺具体如下:The difference between Example 3 and Example 1 is that in Example 3, step 23) prepares a second perovskite light-absorbing layer 23 made of FA 0.83 Cs 0.17 PbI 2.8 Cl 0.2 . Its preparation process is as follows:
将142.8mg FAI、461mg PbI2、44.2mg CsI、27.8mg PbCl2和2.7609mg KPF6溶解于DMF和NMP的混合溶剂(DMF:500μL;NMP:96μL)中,常温搅拌6h获得前驱体溶液备用。Dissolve 142.8 mg FAI, 461 mg PbI 2 , 44.2 mg CsI, 27.8 mg PbCl 2 and 2.7609 mg KPF 6 in a mixed solvent of DMF and NMP (DMF: 500 μL; NMP: 96 μL), and stir for 6 hours at room temperature to obtain a precursor solution for later use.
将步骤22)获得的基底置于N2环境的手套箱中,使用匀胶机将85μL前驱体溶液以5000rpm的转速旋涂于第二空穴传输层22上。旋涂结束后进行分步退火,先将旋涂后的基底转移到在70℃热台上退火5min,再转移至温度为25℃、相对湿度40%的环境中,以150℃的温度退火10min,由此在第二空穴传输层22上制备获得材料为FA0.83Cs0.17PbI2.8Cl0.2的第二钙钛矿光吸收层23。Place the substrate obtained in step 22) in a glove box in an N2 environment, and use a glue leveler to spin-coat 85 μL of the precursor solution onto the second hole transport layer 22 at a rotation speed of 5000 rpm. After spin coating, perform step-by-step annealing. First transfer the spin-coated substrate to a hot stage at 70°C for annealing for 5 minutes, then transfer to an environment with a temperature of 25°C and a relative humidity of 40%, and anneal at a temperature of 150°C for 10 minutes. , thereby preparing a second perovskite light absorption layer 23 whose material is FA 0.83 Cs 0.17 PbI 2.8 Cl 0.2 on the second hole transport layer 22 .
实施例3的其余工艺步骤与实施例1的完全相同,因此不再赘述。The remaining process steps of Embodiment 3 are exactly the same as those of Embodiment 1, and therefore will not be described again.
综上所述,本发明实施例提供的两端式叠层太阳能电池,通过MXene材料互联层将钙钛矿底电池和钙钛矿顶电池以机械堆叠的方式结合在一起形成全钙钛矿叠层太阳能电池:一方面,由于MXene材料层是直接制备在钙钛矿底电池上,钙钛矿顶电池在制备完成之后再采用机械堆叠的键合方式结合到钙钛矿底电池上,避免了传统的两端叠层电池工艺中在钙钛矿底电池上进行额外的工艺,解决了传统两端叠层工艺中高温、溶液等条件对底电池性能造成损伤的问题,降低了两端式叠层太阳能电池的制备工艺难度;另一方面,采用MXene材料作为中间互联层,钙钛矿顶电池与钙钛矿底电池的键合更加紧密,削弱了直接键合造成的电流损失,使得顶电池和底电池之间能够有效地进行电学串联和光学耦合;另外,MXene材料具有电导率高、透光性好等特点,可降低电池的光学、电学寄生损失,使得两端式叠层太阳能电池可以具备优异的性能。In summary, the two-terminal tandem solar cell provided by the embodiment of the present invention combines the perovskite bottom cell and the perovskite top cell in a mechanical stacking manner through the MXene material interconnection layer to form a full perovskite stack. Layer solar cells: On the one hand, since the MXene material layer is directly prepared on the perovskite bottom cell, the perovskite top cell is bonded to the perovskite bottom cell using mechanical stacking bonding after the preparation is completed, avoiding the need for In the traditional two-terminal stacked battery process, additional processes are performed on the perovskite bottom cell, which solves the problem of damage to the performance of the bottom battery caused by high temperature, solution and other conditions in the traditional two-terminal stacked process, and reduces the cost of the two-terminal stacked battery. The difficulty of the preparation process of layer solar cells; on the other hand, using MXene materials as the intermediate interconnection layer, the perovskite top cell and the perovskite bottom cell are bonded more closely, weakening the current loss caused by direct bonding, making the top cell It can effectively perform electrical series connection and optical coupling with the bottom cell; in addition, the MXene material has the characteristics of high conductivity and good light transmittance, which can reduce the optical and electrical parasitic losses of the battery, making the two-terminal tandem solar cell can Has excellent performance.
需要指出的是,上述实施例仅为说明本发明的技术构思及特点,其目的在于让熟悉此项技术的人士能够了解本发明的内容并据以实施,并不能以此限制本发明的保护范围。凡根据本发明精神实质所作的等效变化或修饰,都应涵盖在本发明的保护范围之内。 It should be pointed out that the above embodiments are only to illustrate the technical concepts and characteristics of the present invention. Their purpose is to enable those familiar with this technology to understand the content of the present invention and implement it accordingly. This does not limit the scope of protection of the present invention. . All equivalent changes or modifications made based on the spirit and essence of the present invention should be included in the protection scope of the present invention.

Claims (10)

  1. 一种基于MXene材料互联的两端式叠层太阳能电池,其特征在于,包括钙钛矿底电池、MXene材料互联层和钙钛矿顶电池;所述MXene材料互联层沉积形成在所述钙钛矿底电池上,所述钙钛矿顶电池键合结合在所述MXene材料互联层上。A two-terminal laminated solar cell based on MXene material interconnection, characterized by including a perovskite bottom cell, an MXene material interconnection layer and a perovskite top cell; the MXene material interconnection layer is deposited on the perovskite On the mine bottom battery, the perovskite top battery is bonded to the MXene material interconnection layer.
  2. 根据权利要求1所述的两端式叠层太阳能电池,其特征在于,所述MXene材料互联层的材料具体是Nb2CTxThe two-terminal tandem solar cell according to claim 1, wherein the material of the MXene material interconnect layer is specifically Nb 2 CT x .
  3. 根据权利要求2所述的两端式叠层太阳能电池,其特征在于,所述MXene材料互联层的厚度为50nm~200nm。The two-terminal tandem solar cell according to claim 2, wherein the thickness of the MXene material interconnection layer is 50 nm to 200 nm.
  4. 根据权利要求1所述的两端式叠层太阳能电池,其特征在于,所述钙钛矿底电池包括依次叠层设置的第一导电玻璃基底、第一电子传输层、第一钙钛矿光吸收层、第一空穴传输层、传输缓冲层、第一透明导电层和顶电极层,所述第一导电玻璃基底上连接有第一引出电极;所述钙钛矿顶电池包括依次叠层设置的第二导电玻璃基底、第二空穴传输层、第二钙钛矿光吸收层、第二电子传输层和第二透明导电层,所述第二导电玻璃基底上连接有第二引出电极;其中,所述MXene材料互联层沉积形成在所述顶电极层上,所述第二透明导电层键合结合在所述MXene材料互联层上。The two-terminal tandem solar cell according to claim 1, wherein the perovskite bottom cell includes a first conductive glass substrate, a first electron transport layer, a first perovskite light emitting diode, and a first conductive glass substrate, which are stacked in sequence. The absorption layer, the first hole transport layer, the transport buffer layer, the first transparent conductive layer and the top electrode layer, the first conductive glass substrate is connected to the first extraction electrode; the perovskite top cell includes stacked layers in sequence A second conductive glass substrate, a second hole transport layer, a second perovskite light absorption layer, a second electron transport layer and a second transparent conductive layer are provided, and a second extraction electrode is connected to the second conductive glass substrate ; Wherein, the MXene material interconnection layer is deposited and formed on the top electrode layer, and the second transparent conductive layer is bonded to the MXene material interconnection layer.
  5. 根据权利要求1所述的两端式叠层太阳能电池,其特征在于,所述钙钛矿底电池包括依次叠层设置的第一导电玻璃基底、第一空穴传输层、第一钙钛矿光吸收层、第一电子传输层、传输缓冲层、第一透明导电层和顶电极层,所述第一导电玻璃基底上连接有第一引出电极;所述钙钛矿顶电池包括依次叠层设置的第二导电玻璃基底、第二电子传输层、第二钙钛矿光吸收层、第二空穴传输层和第二透明导电层,所述第二导电玻璃基底上连接有第二引出电极;其中,所述MXene材料互联层沉积形成在所述顶电极层上,所述第二透明导电层键合结合在所述MXene材料互联层上。The two-terminal tandem solar cell according to claim 1, wherein the perovskite bottom cell includes a first conductive glass substrate, a first hole transport layer, a first perovskite layer and a first conductive glass substrate. A light absorption layer, a first electron transmission layer, a transmission buffer layer, a first transparent conductive layer and a top electrode layer. A first extraction electrode is connected to the first conductive glass substrate; the perovskite top cell includes stacked layers in sequence. A second conductive glass substrate, a second electron transport layer, a second perovskite light absorption layer, a second hole transport layer and a second transparent conductive layer are provided, and a second extraction electrode is connected to the second conductive glass substrate ; Wherein, the MXene material interconnection layer is deposited and formed on the top electrode layer, and the second transparent conductive layer is bonded to the MXene material interconnection layer.
  6. 根据权利要求4或5所述的两端式叠层太阳能电池,其特征在于,所述钙钛矿底电池中,所述第一导电玻璃基底为ITO导电玻璃,所述第一电子传输层的材料为SnO2,所述第一钙钛矿光吸收层的材料为MA0.72FA0.28Pb(I0.85Cl0.15)3,所述第一空穴传输层的材料为Spiro-OMeTAD,所述传输缓冲层的材料为MoOx,第一透明导电层的材料为IZO,所述顶电极层和所述第一引出电极的材料为Ag;The two-terminal tandem solar cell according to claim 4 or 5, wherein in the perovskite bottom cell, the first conductive glass substrate is ITO conductive glass, and the first electron transport layer The material is SnO 2 , the material of the first perovskite light absorption layer is MA 0.72 FA 0.28 Pb(I 0.85 Cl 0.15 ) 3 , the material of the first hole transport layer is Spiro-OMeTAD, and the transmission buffer The material of the layer is MoO x , the material of the first transparent conductive layer is IZO, and the material of the top electrode layer and the first extraction electrode is Ag;
    所述钙钛矿顶电池中,所述第二导电玻璃基底为ITO导电玻璃,所述第二 空穴传输层的材料为PTAA,所述第二钙钛矿光吸收层的材料为FA0.65MA0.2Cs0.15Pb(I0.8Br0.2)3或FA0.83Cs0.17PbI2.8Cl0.2,所述第二电子传输层的材料为SnO2,所述第二透明导电层的材料为IZO,所述第二引出电极的材料为Ag。In the perovskite top battery, the second conductive glass substrate is ITO conductive glass, and the second The material of the hole transport layer is PTAA, the material of the second perovskite light absorption layer is FA 0.65 MA 0.2 Cs 0.15 Pb(I 0.8 Br 0.2 ) 3 or FA 0.83 Cs 0.17 PbI 2.8 Cl 0.2 , and the second The electron transport layer is made of SnO 2 , the second transparent conductive layer is made of IZO, and the second extraction electrode is made of Ag.
  7. 根据权利要求6所述的两端式叠层太阳能电池,其特征在于,所述钙钛矿底电池中,所述第一导电玻璃基底的厚度为0.5mm~1mm且具有50nm~200nm厚的ITO导电层,所述第一电子传输层的厚度为50nm~100nm,所述第一钙钛矿光吸收层的厚度为300nm~600nm,所述第一空穴传输层的厚度为10nm~100nm,所述传输缓冲层的厚度为10nm~80nm,第一透明导电层的厚度为50nm~200nm,所述顶电极层和所述第一引出电极的厚度分别为30nm~150nm;The two-terminal tandem solar cell according to claim 6, wherein in the perovskite bottom cell, the thickness of the first conductive glass substrate is 0.5 mm ~ 1 mm and has a thickness of 50 nm ~ 200 nm ITO Conductive layer, the thickness of the first electron transport layer is 50nm~100nm, the thickness of the first perovskite light absorption layer is 300nm~600nm, the thickness of the first hole transport layer is 10nm~100nm, so The thickness of the transmission buffer layer is 10nm~80nm, the thickness of the first transparent conductive layer is 50nm~200nm, and the thickness of the top electrode layer and the first extraction electrode is 30nm~150nm respectively;
    所述钙钛矿顶电池中,所述第二导电玻璃基底的厚度为0.5mm~1mm且具有50nm~200nm厚的ITO导电层,所述第二空穴传输层的厚度为10nm~100nm,所述第二钙钛矿光吸收层的厚度为300nm~600nm,所述第二电子传输层的厚度为50nm~100nm,所述第二透明导电层的厚度为50nm~200nm,所述第二引出电极的厚度为30nm~150nm。In the perovskite top cell, the thickness of the second conductive glass substrate is 0.5 mm ~ 1 mm and has a 50 nm ~ 200 nm thick ITO conductive layer, and the thickness of the second hole transport layer is 10 nm ~ 100 nm, so The thickness of the second perovskite light absorption layer is 300nm~600nm, the thickness of the second electron transport layer is 50nm~100nm, the thickness of the second transparent conductive layer is 50nm~200nm, and the second extraction electrode The thickness is 30nm~150nm.
  8. 如权利要求1-7任一项所述的基于MXene材料互联的两端式叠层太阳能电池的制备方法,其特征在于,包括:The method for preparing a two-terminal tandem solar cell based on MXene material interconnection according to any one of claims 1 to 7, characterized in that it includes:
    分别制备获得所述钙钛矿底电池和所述钙钛矿顶电池;Preparing and obtaining the perovskite bottom battery and the perovskite top battery respectively;
    在所述钙钛矿底电池上沉积形成所述MXene材料互联层;Depositing and forming the MXene material interconnect layer on the perovskite bottom cell;
    将所述钙钛矿顶电池键合在所述MXene材料互联层上并采用固化胶固化连接。The perovskite top cell is bonded to the MXene material interconnect layer and solidified and connected using curing glue.
  9. 根据权利要求8所述的制备方法,其特征在于,所述两端式叠层太阳能电池的制备方法包括以下步骤:The preparation method according to claim 8, characterized in that the preparation method of the two-terminal tandem solar cell includes the following steps:
    提供第一导电玻璃基底,在所述第一导电玻璃基底上依次制备形成叠层设置的第一电子传输层、第一钙钛矿光吸收层、第一空穴传输层、传输缓冲层和第一透明导电层,在所述第一透明导电层上沉积顶电极层并在所述第一导电玻璃基底上形成第一引出电极,获得所述钙钛矿底电池;Provide a first conductive glass substrate, and sequentially prepare a first electron transport layer, a first perovskite light absorption layer, a first hole transport layer, a transport buffer layer and a first stacked layer on the first conductive glass substrate. A transparent conductive layer, depositing a top electrode layer on the first transparent conductive layer and forming a first extraction electrode on the first conductive glass substrate to obtain the perovskite bottom battery;
    应用旋涂、喷涂或丝网印刷工艺在所述顶电极层上制备形成所述MXene材料互联层;Apply spin coating, spray coating or screen printing process to prepare and form the MXene material interconnect layer on the top electrode layer;
    提供第二导电玻璃基底,在所述第二导电玻璃基底上依次制备形成叠层设 置的第二空穴传输层、第二钙钛矿光吸收层、第二电子传输层和第二透明导电层,并在所述第二导电玻璃基底上制备形成第二引出电极,获得所述钙钛矿顶电池;Provide a second conductive glass substrate, and sequentially prepare and form a laminated device on the second conductive glass substrate. A second hole transport layer, a second perovskite light absorption layer, a second electron transport layer and a second transparent conductive layer are provided, and a second lead-out electrode is prepared and formed on the second conductive glass substrate to obtain the Perovskite top cells;
    将所述第二透明导电层键合结合在所述MXene材料互联层上,在所述第二透明导电层和所述MXene材料互联层连接界面的四周涂布紫外光固化胶并使用紫外光照射固化,制备获得所述两端式叠层太阳能电池。The second transparent conductive layer is bonded to the MXene material interconnection layer, and UV curing glue is applied around the connection interface between the second transparent conductive layer and the MXene material interconnection layer and irradiated with ultraviolet light After curing, the two-terminal tandem solar cell is prepared.
  10. 根据权利要求8所述的制备方法,其特征在于,所述两端式叠层太阳能电池的制备方法包括以下步骤:The preparation method according to claim 8, characterized in that the preparation method of the two-terminal tandem solar cell includes the following steps:
    提供第一导电玻璃基底,在所述第一导电玻璃基底上依次制备形成叠层设置的第一空穴传输层、第一钙钛矿光吸收层、第一电子传输层、传输缓冲层和第一透明导电层,在所述第一透明导电层上沉积顶电极层并在所述第一导电玻璃基底上形成第一引出电极,获得所述钙钛矿底电池;A first conductive glass substrate is provided, and a first hole transport layer, a first perovskite light absorption layer, a first electron transport layer, a transport buffer layer and a first stacked layer are sequentially prepared on the first conductive glass substrate. A transparent conductive layer, depositing a top electrode layer on the first transparent conductive layer and forming a first extraction electrode on the first conductive glass substrate to obtain the perovskite bottom battery;
    应用旋涂、喷涂或丝网印刷工艺在所述顶电极层上制备形成所述MXene材料互联层;Apply spin coating, spray coating or screen printing process to prepare and form the MXene material interconnect layer on the top electrode layer;
    提供第二导电玻璃基底,在所述第二导电玻璃基底上依次制备形成叠层设置的第二电子传输层、第二钙钛矿光吸收层、第二空穴传输层和第二透明导电层,并在所述第二导电玻璃基底上制备形成第二引出电极,获得所述钙钛矿顶电池;A second conductive glass substrate is provided, and a second electron transport layer, a second perovskite light absorption layer, a second hole transport layer and a second transparent conductive layer formed in a stack are sequentially prepared on the second conductive glass substrate. , and prepare and form a second extraction electrode on the second conductive glass substrate to obtain the perovskite top battery;
    将所述第二透明导电层键合结合在所述MXene材料互联层上,在所述第二透明导电层和所述MXene材料互联层连接界面的四周涂布紫外光固化胶并使用紫外光照射固化,制备获得所述两端式叠层太阳能电池。 The second transparent conductive layer is bonded to the MXene material interconnection layer, and UV curing glue is applied around the connection interface between the second transparent conductive layer and the MXene material interconnection layer and irradiated with ultraviolet light After curing, the two-terminal tandem solar cell is prepared.
PCT/CN2023/101508 2022-07-29 2023-06-20 Two-terminal stacked solar cell based on mxene material interconnection, and preparation method therefor WO2024021938A1 (en)

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CN112366275A (en) * 2020-10-15 2021-02-12 南方科技大学 Application of MXene and perovskite solar cell containing MXene
CN112599675A (en) * 2020-12-15 2021-04-02 华能新能源股份有限公司 Interlayer suitable for laminated solar cell, cell and preparation method
CN112599683A (en) * 2020-12-15 2021-04-02 华能新能源股份有限公司 Lamination process for preparing laminated solar cell
CN114203757A (en) * 2021-12-09 2022-03-18 青海黄河上游水电开发有限责任公司 Silicon laminated solar cell based on two-dimensional perovskite and manufacturing method thereof
CN115332293A (en) * 2022-07-29 2022-11-11 国家电投集团黄河上游水电开发有限责任公司 Two-end type laminated solar cell based on MXene material interconnection and preparation method thereof

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CN112599675A (en) * 2020-12-15 2021-04-02 华能新能源股份有限公司 Interlayer suitable for laminated solar cell, cell and preparation method
CN112599683A (en) * 2020-12-15 2021-04-02 华能新能源股份有限公司 Lamination process for preparing laminated solar cell
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