WO2023216201A1

WO2023216201A1 - Oled display panel, pixel circuit of oled display panel, and display apparatus

Info

Publication number: WO2023216201A1
Application number: PCT/CN2022/092555
Authority: WO
Inventors: 向枭; 李健
Original assignee: 北京小米移动软件有限公司
Priority date: 2022-05-12
Filing date: 2022-05-12
Publication date: 2023-11-16
Also published as: CN117918042A

Abstract

An OLED display panel (10), a pixel circuit of the OLED display panel (10), and a display apparatus (1). The OLED display panel (10) comprises a substrate (11), a driving layer (12), an OLED display device layer (13), an electrostatic shielding layer (14), a first power supply end (VDD), and a second power supply end (VSS). The driving layer (12) and the OLED display device layer (13) are stacked in a display area, and the OLED display device layer (13) is arranged on the side of the driving layer (12) away from the substrate (11). An input end of the driving layer (12) is connected to the first power supply end (VDD), an output end of the driving layer (12) is connected to an anode of the OLED display device layer (13), and a cathode of the OLED display device layer (13) is connected to the second power supply end (VSS). The electrostatic shielding layer (14) is arranged on the substrate (11) and is made of a metal material, and the electrostatic shielding layer (14) is connected to the second power supply end (VSS). The display apparatus (1) comprises the OLED display panel (10). The OLED display panel (10) can shield static electricity, so that the display effect of the OLED display panel (10) is improved.

Description

OLED display panel, pixel circuit and display device of OLED display panel

Technical field

The present application relates to the field of display technology, specifically, to an OLED display panel, a pixel circuit of an OLED display panel, and a display device.

Background technique

OLED (organic light emitting diode, organic light emitting diode) display panel has the advantages of being thin and light, low energy consumption, high brightness, and good luminous rate. Among them, the OLED display panel can use the thin film transistor in each pixel to provide the driving current corresponding to the data signal to the light-emitting element and control the luminous brightness of the light-emitting element, so as to achieve the required display effect.

However, OLED display panels may generate static electricity due to friction during use. The generated static electricity will be transferred to the substrate where the thin film transistor is located, causing the characteristics of the thin film transistor to shift and affecting the OLED display effect.

Contents of the invention

This application provides an improved OLED display panel, a pixel circuit of the OLED display panel and a display device, which can shield static electricity and improve the display effect.

The first aspect of this application provides an OLED display panel, including:

a substrate, including a display area;

A driving layer and an OLED display device layer are stacked in the display area, the OLED display device layer is provided on the side of the driving layer facing away from the substrate, and the OLED display device layer includes a light-emitting device;

The first power terminal and the second power terminal, the input terminal of the driving layer is connected to the first power terminal, the output terminal of the driving layer is connected to the anode of the OLED display device layer, and the cathode of the light-emitting device Connected to the second power terminal; and

An electrostatic shielding layer is provided on the substrate and is made of metal material. The electrostatic shielding layer is connected to the second power terminal.

The second aspect of the present application provides a pixel circuit of an OLED display panel. The OLED display panel includes a substrate, an electrostatic shielding layer provided in the substrate, a driving layer stacked on the substrate, and an OLED. Display device layer, the OLED display device layer is provided on the side of the driving layer facing away from the substrate;

The OLED display panel includes a plurality of pixel units, a first power supply terminal, and a second power supply terminal. Each of the pixel units is provided with a pixel circuit. The pixel circuit includes a drive circuit formed on the drive layer and a drive circuit formed on the drive layer. The light-emitting device of the OLED display device layer;

The input terminal of the driving circuit is connected to the first power terminal, the output terminal of the driving circuit is connected to the anode of the light-emitting device, the anode of the light-emitting device is connected to the second power terminal, and the electrostatic The shielding layer is connected to the second power terminal.

A third aspect of the present application also provides a display device, which includes the OLED display panel described in any one of the above. The display panel includes a plurality of pixel units, and at least one of the pixel units includes any one of the above-mentioned OLED display panels. The pixel circuit described in the item.

This application provides an OLED display panel, a pixel circuit of the OLED display panel, and a display device. The OLED display panel includes an electrostatic shielding layer provided on a substrate, and the electrostatic shielding layer is connected to the second power terminal. In the process of transferring static electricity from the substrate to the driving layer, the static electricity needs to pass through the electrostatic shielding layer. The electrostatic shielding layer is made of a conductive metal material. Therefore, the electrostatic charge will be transported to the second power supply terminal through the electrostatic shielding layer, and the second power supply The terminal is connected to the cathode of the OLED display device layer, and the electrostatic charge cannot flow in the reverse direction. The static electricity will not pass through the driving layer, so it will not affect the characteristics of the thin film transistor in the driving layer, and reduce or even avoid the abnormal display phenomenon of the OLED display panel due to static electricity.

Description of the drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments of the present application. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without exerting any creative effort.

Figure 1 is a schematic diagram of a display device according to an exemplary embodiment of the present application;

Figure 2 is a cross-sectional view of an OLED display panel shown in an exemplary embodiment of the present application;

FIG. 3 is a circuit diagram of one pixel unit of an OLED display panel according to an exemplary embodiment of the present application.

Detailed ways

The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only some of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in this application, all other embodiments obtained by those of ordinary skill in the art without creative efforts fall within the scope of protection of this application.

OLED display panels often generate static electricity due to friction with the substrate during use. The generated static electricity will be transferred from the substrate to the substrate where the thin film transistor is located, causing the characteristics of the thin film transistor to shift, which will affect the performance of the OLED display panel. display effect.

This application provides an OLED display panel, wherein the OLED display panel has a static electricity dissipation function to prevent static electricity from passing through the thin film transistor and the organic light emitting diode, so it will not cause the characteristics of the thin film transistor to shift, so that the display effect of the OLED display panel is improved. improve. In addition, this application also provides a display device including an OLED display panel.

Please refer to FIG. 1 , which is a schematic diagram of a display device 1 according to an exemplary embodiment of the present application.

The embodiment of the present application provides a display device 1. The display device 1 includes an OLED display panel 10 located at the front end. The OLED display panel 10 is used to display images. The display device 1 includes but is not limited to mobile phones, monitors, tablets, smart watches, e-books, navigators, televisions, and digital cameras. The OLED display panel 10 includes, but is not limited to, a flexible OLED display panel 10 . The flexible OLED display panel 10 has characteristics such as stretchability, bendability, or flexibility. The OLED display panel 10 can use a flexible substrate, and its materials include but are not limited to polyimide material (PI for short) or polycarbonate material (PC for short) or polyethylene terephthalate material (PET for short) wait. Of course, the OLED display panel 10 can also use a glass substrate.

Please refer to FIG. 2 , which is a cross-sectional view of the OLED display panel 10 according to an exemplary embodiment of the present application.

The OLED display panel 10 includes a substrate 11 , a driving layer 12 and an OLED display device layer 13 . The substrate 11 includes a display area and a non-display area, and the non-display area may be arranged around the display area. Among them, the display area is used to display images, and the non-display area can be equipped with peripheral circuits, such as integrated circuit boards.

The driving layer 12 and the OLED display device layer 13 are stacked in the display area of the substrate 11 , wherein the OLED display device layer 13 is provided on the side of the driving layer 12 facing away from the substrate 11 , and the driving layer 12 includes The driving circuit includes a thin film transistor, and the OLED display device layer 13 includes an anode and a cathode. The driving layer 12 is used to provide driving current to the OLED display device layer 13 to control the light-emitting device of the OLED display device layer 13 to emit light. The size of the driving current can control the brightness of the light, so that the OLED display panel 10 can achieve the required display effect.

The OLED display panel 10 also includes a first power terminal, a second power terminal, and an electrostatic shielding layer 14 . The input terminal of the driving circuit is connected to the first power supply terminal, the output terminal of the driving circuit is connected to the anode of the OLED display device layer 13 , and the cathode of the OLED display device layer 13 is connected to the second power supply terminal. end connection. The electrostatic shielding layer 14 is made of metal material and is provided on the substrate 11 . The electrostatic shielding layer 14 is located on the side of the driving layer 12 facing away from the OLED display device layer 13 . The electrostatic shielding layer 14 is connected to the second power terminal. The first power supply terminal is the VDD terminal (not shown in Figure 2), the VDD terminal is the input terminal of the operating voltage, the second power supply terminal is the VSS terminal, and the VSS terminal can be the common ground terminal of the circuit.

When the OLED display panel 10 is working, the voltage at the first power supply terminal is input to the input port of the IC (integrated circuit) through the conductive terminals on the motherboard, the flexible circuit board, etc., and then under the control of the timing control signal, the first power supply The voltage at the first power supply terminal and the voltage at the second power supply terminal form a voltage difference between the anode and the cathode of the OLED display device layer 13, thereby generating a current flowing through the OLED display device layer 13, Thus, the OLED display device layer 13 can be driven to emit light. The OLED display device layer 13 includes an organic light-emitting diode, and the cathode terminal of the organic light-emitting diode is the second power supply terminal, that is, the VSS terminal shown in FIG. 2 .

According to the above description, when static electricity is generated in the substrate 11 of the OLED display panel 10, the static electricity will be transferred from the substrate 11 to the driving layer 12. Since the static electricity shielding layer 14 is located in the substrate 11, the static electricity needs to be transferred during the transfer process. After passing through the electrostatic shielding layer 14, the electrostatic shielding layer 14 is made of a conductive metal material. Therefore, the electrostatic charge will be transported to the second power terminal through the electrostatic shielding layer 14 without passing through the driving layer 12, so it will not affect the driving. The characteristics of layer 12 prevent the OLED display panel 10 from causing abnormal display due to static electricity.

In one embodiment, the electrostatic shielding layer 14 may be configured as one of a molybdenum metal layer, an aluminum metal layer, and a titanium metal layer. In an optional embodiment, the electrostatic shielding layer 14 can be configured as a molybdenum metal layer (Mo). The molybdenum metal layer has good aging resistance and long service life. In one embodiment, the second power terminal is connected to ground, so that voltage stabilization and protection can be achieved.

In one embodiment, the thickness of the electrostatic shielding layer 14 ranges from 0.01um to 0.2um. For example, the thickness of the electrostatic shielding layer 14 can be set to 0.01um, 0.02um, 0.04um, 0.05um, 0.08um, 0.1um, 0.12um, 0.14um, 0.15um, 0.16um, 0.18um, 0.2um, but is not limited to this.

In an alternative embodiment, the thickness of the electrostatic shielding layer 14 may be set to a range of 0.08um to 0.1um.

This application does not limit the specific structure of the substrate 11. The substrate 11 may be provided with one or more layers. In the embodiment shown in FIG. 2 , the substrate 11 is provided with multiple layers, at least two of which are made of different materials, and the electrostatic shielding layer 14 is provided on the part of the substrate 11 closest to the driving layer 12 layer. With this arrangement, the electrostatic shielding layer 14 can be brought closer to the driving layer 12 , so that the electrostatic shielding layer 14 has a better effect of shielding static electricity.

In the embodiment shown in FIG. 2 , the substrate 11 includes a multi-layer first substrate 111 and a multi-layer second substrate 112 , and the first substrate 111 and the second substrate 112 are close to each other. One side of the driving layer 12 is stacked sequentially and arranged alternately. That is to say, the substrate 11 is the first substrate 111, the second substrate 112, the first substrate 111, the Second substrate 112. The first substrate 111 may have two layers or more, and the second substrate 112 may have two layers or more. The first substrate 111 can be made of polymer material, the second substrate 112 can be made of water-blocking material, and the electrostatic shielding layer 14 is provided on the second substrate 112 . Such an arrangement can prevent the electrostatic shielding layer 14 from contacting the first substrate 111 , thereby preventing the electrostatic shielding layer 14 from affecting the composition or performance of the first substrate 111 . In a specific embodiment, the first substrate 111 may be configured as a polyimide substrate, but is not limited thereto. The second substrate 112 may be an oxygen silicon substrate or a nitrogen silicon substrate, but is not limited thereto.

In one embodiment, a buffer layer 15 may also be provided between the substrate 11 and the driving layer 12 . The buffer layer 15 is provided on the substrate 11, which can make the upper surface of the substrate 11 flatter and facilitate the subsequent formation of other film layers. In the embodiment shown in FIG. 2 , the buffer layer 15 is provided between the innermost second substrate 112 and the driving layer 12 . The buffer layer 15 includes, but is not limited to, an inorganic material layer or an organic material layer. The material of the inorganic material layer includes, but is not limited to, silicon oxide (SiO), silicon nitride (SiN), silicon oxynitride, aluminum oxide or nitride. Aluminum, etc., and the material of the organic material layer includes but is not limited to acrylic or polyimide.

In one embodiment, the driving layer 12 includes a thin film transistor, and the thin film transistor includes an active layer 120, a source and drain electrode layer 121, a gate insulating layer 122, a first gate electrode 123, an interlayer dielectric layer 124 and a third Second gate 125. Wherein, the active layer 120 and the source-drain electrode layer 121 are arranged in the same layer. The source-drain electrode layer 121 includes a source electrode and a drain electrode. The gate insulating layer 122, the first gate electrode 123, the The interlayer dielectric layer 124 and the second gate electrode 125 are stacked in sequence on the side of the active layer 120 facing away from the substrate 11 . The first gate 123 and the second gate 125 are parallel and opposite to each other, and they are equivalent to storage capacitors.

The material of the active layer 120 may be a metal oxide material, including but not limited to indium tin oxide and indium gallium zinc oxide. The materials of the first gate 123 and the second gate 125 as well as the source and drain of the source-drain electrode layer 121 can be silver (Ag), copper (Cu), aluminum (Al), molybdenum (Mo), or alloy materials. Such as at least one of aluminum neodymium (AlNd) and molybdenum niobium (MoNb).

The OLED display device layer 13 may also include a light-emitting layer, a hole transport layer, an electron transport layer, and the like. In an optional embodiment, the OLED display device layer 13 may also include a hole injection layer, an electron injection layer, etc., which is not limited in this application.

Please refer to FIG. 3 , which shows a pixel circuit of one pixel unit of the OLED display panel 10 .

This application also provides a pixel circuit of an OLED display panel 10. The OLED display panel 10 includes a plurality of pixel units, a first power supply terminal VDD and a second power supply terminal VSS. Among them, in the display area of the OLED display panel 10, a plurality of pixel units are distributed in an array. Each pixel unit includes a driving circuit 20 and a light-emitting device. The light-emitting device may be an organic light-emitting diode 30, for example. The driving circuit 20 is formed on the driving layer 12, and the light-emitting device is formed on the OLED display device layer 13. In this embodiment, the light-emitting device uses an organic light-emitting diode 30.

The input terminal of the driving circuit 20 is connected to the first power terminal VDD, the output terminal of the driving circuit 20 is connected to the anode terminal N1 of the organic light-emitting diode 30, and the cathode terminal N2 of the organic light-emitting diode 30 is connected to the first power terminal VDD. The second power supply terminal VSS is connected.

The electrostatic shielding layer 14 is connected to the second power supply terminal VSS. The electrostatic charge will be transported to the second power supply terminal VSS through the electrostatic shielding layer 14 without passing through the driving circuit 20. Therefore, it will not affect the characteristics of the driving circuit 20, making the OLED display Panel 10 will not cause abnormal display due to static electricity.

In one embodiment, the driving circuit 20 is configured as a 7T1C structure driving circuit. The driving circuit 20 can eliminate the influence of the threshold voltage Vth and reduce the uneven display of the OLED display panel 10 .

In an actual application scenario, the voltage of the first power supply terminal VDD is applied to the anode N1 of the organic light-emitting diode 30 through the driving circuit 20, and the voltage of the second power supply terminal VSS is applied to the cathode N2 of the organic light-emitting diode 30. The VDD voltage and the VSS voltage are in the organic light-emitting diode 30. A voltage difference is formed across the two ends of the light-emitting diode 30, so that the driving circuit 20 can provide the driving current Ii to the organic light-emitting diode 30 and control the organic light-emitting diode 30 to emit light.

In the embodiment shown in FIG. 3 , the electrostatic shielding layer 14 is a molybdenum metal layer (Mo), and the electrostatic shielding layer 14 is connected to the cathode terminal N2 of the organic light-emitting diode 30 so that the static electricity generated from the substrate 11 can pass through the electrostatic shielding layer. 14 is transmitted to the cathode terminal N2 of the organic light-emitting diode 30 to dissipate static electricity. In one embodiment, the cathode terminal N2 of the organic light-emitting diode 30 is a ground terminal.

In one embodiment, the driving circuit 20 includes a driving transistor T1, a capacitor Cs and a plurality of switching transistors. Among them, the driving transistor T1 and the plurality of switching transistors are thin film transistors, and the thin film transistors can be N-type transistors or P-type transistors. The driving transistor T1 includes an input terminal and an output terminal. The input terminal of the driving transistor T1 is used to input a voltage. The output terminal of the driving transistor T1 is used to output a driving voltage. The driving transistor T1 is used to drive the organic light-emitting diode 30 to cause the organic light-emitting diode 30 to emit light. .

Both ends of the capacitor Cs are electrically connected to the input terminal and the output terminal of the driving transistor T1 respectively. The capacitor Cs is used to store electric energy through the voltage output by the reset line when the driving transistor T1 is turned on, and to release electric energy when the driving transistor T1 is turned off. , keeping the driving transistor T1 on. A plurality of switching transistors are switching elements, all of which are connected to the driving transistor T1 and can be turned on or off.

In one embodiment, the plurality of switching transistors includes a first switching transistor T2 and a second switching transistor T5. The control terminal of the second switching transistor T5 is electrically connected to the pulse signal line EM for inputting pulse signals. The first terminal of the second switching transistor T5 is connected to the first power supply terminal VDD. The second switch The second terminal of the transistor T5 is electrically connected to the input terminal of the driving transistor T1. For example, when a high-level signal is input to the control terminal of the second switching transistor T5 through the pulse signal line EM, the second switching transistor T5 is turned on, and when a low-level signal is input, the second switching transistor T5 is turned off.

The control terminal of the first switching transistor T2 is electrically connected to the scan line Scan, and the first terminal of the first switching transistor T2 is electrically connected to the data line for inputting the data signal voltage Vdata. The second terminal is electrically connected to the second terminal of the second switching transistor T5. For example, when a high-level signal is input to the control terminal of the first switching transistor T2 through the scan line Scan, the first switching transistor T2 is turned on, and when a low-level signal is input, the first switching transistor T2 is turned off.

In one embodiment, the plurality of switching transistors further includes a third switching transistor T3 and a fourth switching transistor T4. The control terminal of the third switching transistor T3 is electrically connected to the scan line Scan(n). The third switching transistor T3 The first terminal of T3 is electrically connected to the control terminal of the driving transistor T1, and the second terminal of the third switching transistor T3 is electrically connected to the output terminal of the driving transistor T1.

The control end of the fourth switching transistor T4 is electrically connected to the reset line reset(n) for inputting the reset voltage, and the first end of the fourth switching transistor T4 is electrically connected to the initialization line for inputting the initialization voltage Vinit. The second terminal of the fourth switching transistor T4 is electrically connected to the control terminal of the driving transistor T1.

In one embodiment, the plurality of switching transistors further includes a fifth switching transistor T6 and a sixth switching transistor T7. The control terminal of the fifth switching transistor T6 is electrically connected to the pulse signal line EM. The control terminal of the fifth switching transistor T6 is electrically connected to the pulse signal line EM. The first terminal is electrically connected to the output terminal of the driving transistor T1 , and the second terminal of the fifth switching transistor T6 is electrically connected to the anode terminal N1 of the organic light-emitting diode 30 .

The control end of the sixth switching transistor T7 is electrically connected to the reset line reset(n), the first end of the sixth switching transistor T7 is electrically connected to the initialization line, and the second end of the sixth switching transistor T7 is electrically connected to the reset line. The second terminal of the fifth switching transistor T6 is connected.

Taking the first switching transistor T2 as an example, the control terminal of the first switching transistor T2 is the gate, one of the first terminal and the second terminal of the first switching transistor T2 is the source, and the other is the drain. The first terminal can be used as an input terminal, and the second terminal can be used as an output terminal. When the input terminal is a source, the output terminal is a drain, and when the input terminal is a drain, the output terminal is a source. For N-type transistors, the input terminal is the drain and the output terminal is the source. For a P-type transistor, the input terminal is the source and the output terminal is the drain. Moreover, for different types of transistors, the control voltage at the control terminal is different. For example, for an N-type transistor, when the control signal is high level, the N-type transistor is in the on state, and when the control signal is low level, the N-type transistor is in disconnected state. For a P-type transistor, when the control signal is low level, the N-type transistor is in the on state, and when the control signal is high level, the N-type transistor is in the off state.

The above are only preferred embodiments of the present application and are not intended to limit the present application. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present application shall be included in the present application. within the scope of protection.

Claims

An OLED display panel, characterized by including:

a substrate, including a display area;

A driving layer and an OLED display device layer are stacked in the display area, and the OLED display device layer is provided on a side of the driving layer facing away from the substrate, and the OLED display device layer includes an anode and a cathode;

The first power terminal and the second power terminal, the input terminal of the driving layer is connected to the first power terminal, the output terminal of the driving layer is connected to the anode of the OLED display device layer, and the OLED display device layer The cathode is connected to the second power terminal; and

An electrostatic shielding layer is provided on the substrate and is made of metal material. The electrostatic shielding layer is connected to the second power terminal.
The OLED display panel according to claim 1, wherein the electrostatic shielding layer is one of a molybdenum metal layer, an aluminum metal layer, and a titanium metal layer.
The OLED display panel according to claim 1, wherein the substrate is provided with multiple layers, at least two of which are made of different materials, and the electrostatic shielding layer is provided in the substrate closest to the driving layer. One of the layers.
The OLED display panel according to claim 3, wherein the substrate includes a multi-layer first substrate and a multi-layer second substrate, and the first substrate and the second substrate are close to each other. One side of the driving layer is stacked and alternately arranged, the first substrate is made of polymer material, the second substrate is made of water-blocking material, and the electrostatic shielding layer is provided on the second lining. end.
The OLED display panel according to claim 1, wherein the thickness of the electrostatic shielding layer ranges from 0.01um to 0.2um.
The OLED display panel according to claim 1, wherein the substrate is a flexible substrate; and/or

The driving layer includes a thin film transistor. The thin film transistor includes an active layer, a source and drain electrode layer, a gate insulating layer, a first gate electrode, an interlayer dielectric layer and a second gate electrode. The active layer and the The source and drain electrode layers are arranged on the same layer, and the gate insulating layer, the first gate electrode, the interlayer dielectric layer and the second gate electrode are stacked in sequence and arranged on the active layer facing away from the substrate. side; and/or

The second power terminal is grounded.
A pixel circuit for an OLED display panel, characterized in that the OLED display panel includes a substrate, an electrostatic shielding layer provided in the substrate, a driving layer and an OLED display device layer stacked on the substrate, The OLED display device layer is provided on a side of the driving layer facing away from the substrate;

The OLED display panel includes a plurality of pixel units, a first power supply terminal, and a second power supply terminal. Each of the pixel units is provided with a pixel circuit. The pixel circuit includes a drive circuit formed on the drive layer and a drive circuit formed on the drive layer. The light-emitting device of the OLED display device layer;

The input terminal of the driving circuit is connected to the first power terminal, the output terminal of the driving circuit is connected to the anode of the light-emitting device, the cathode of the light-emitting device is connected to the second power terminal, and the electrostatic The shielding layer is connected to the second power terminal.
The pixel circuit of the OLED display panel according to claim 7, wherein the driving circuit includes a driving transistor T1, a capacitor Cs and a plurality of switching transistors, and the input terminal of the driving transistor T1 is connected to the first power terminal. connection, the output terminal of the driving transistor T1 is connected to the anode of the light-emitting device, the plurality of switching transistors are connected to the driving transistor T1, and one end of the capacitor Cs is connected to the input terminal of the driving transistor T1, The other end is connected to the output end of the driving transistor T1.
The pixel circuit of the OLED display panel according to claim 8, wherein the plurality of switching transistors include a first switching transistor T2 and a second switching transistor T5, and the control terminal of the second switching transistor T5 is connected to the pulse signal. The first end of the second switching transistor T5 is electrically connected to the first power end, and the second end of the second switching transistor T5 is electrically connected to the input end of the driving transistor T1;

The control end of the first switching transistor T2 is electrically connected to the scan line, the first end of the first switching transistor T2 is electrically connected to the data line, and the second end of the first switching transistor T2 is electrically connected to the second switch. The second terminal of transistor T5 is electrically connected.
The pixel circuit of the OLED display panel according to claim 9, characterized in that, the plurality of switching transistors further include a third switching transistor T3 and a fourth switching transistor T4, and the control terminal of the third switching transistor T3 is connected to the scanning The first end of the third switching transistor T3 is electrically connected to the control end of the driving transistor T1, and the second end of the third switching transistor T3 is electrically connected to the output end of the driving transistor T1;

The control end of the fourth switching transistor T4 is electrically connected to the reset line, the first end of the fourth switching transistor T4 is electrically connected to the initialization line, and the second end of the fourth switching transistor T4 is electrically connected to the driving transistor T1 The control terminal is electrically connected.
The pixel circuit of the OLED display panel according to claim 10, wherein the plurality of switching transistors further include a fifth switching transistor T6 and a sixth switching transistor T7, and the control terminal of the fifth switching transistor T6 is connected to the pulse The signal line is electrically connected, the first terminal of the fifth switching transistor T6 is electrically connected to the output terminal of the driving transistor T1, and the second terminal of the fifth switching transistor T6 is electrically connected to the anode terminal of the light-emitting device;

The control end of the sixth switching transistor T7 is electrically connected to the reset line, the first end of the sixth switching transistor T7 is electrically connected to the initialization line, and the second end of the sixth switching transistor T7 is electrically connected to the fifth switch. The second terminal of transistor T6 is connected.
A display device, characterized by including:

The OLED display panel according to any one of claims 1 to 6, said display panel including a plurality of pixel units, at least one of the pixel units including the pixel circuit according to any one of claims 7 to 11.