WO2023246676A1 - Low-copper-salt weakly-alkaline electronic copper electroplating liquid for compact copper filling of pcb blind hole, and electroplating method therefor - Google Patents
Low-copper-salt weakly-alkaline electronic copper electroplating liquid for compact copper filling of pcb blind hole, and electroplating method therefor Download PDFInfo
- Publication number
- WO2023246676A1 WO2023246676A1 PCT/CN2023/100963 CN2023100963W WO2023246676A1 WO 2023246676 A1 WO2023246676 A1 WO 2023246676A1 CN 2023100963 W CN2023100963 W CN 2023100963W WO 2023246676 A1 WO2023246676 A1 WO 2023246676A1
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- WO
- WIPO (PCT)
- Prior art keywords
- copper
- low
- electroplating
- salt
- weakly alkaline
- Prior art date
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 70
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 70
- 239000010949 copper Substances 0.000 title claims abstract description 70
- 238000009713 electroplating Methods 0.000 title claims abstract description 52
- 238000011049 filling Methods 0.000 title claims abstract description 22
- 239000007788 liquid Substances 0.000 title claims abstract description 17
- 238000000034 method Methods 0.000 title claims description 16
- 150000001879 copper Chemical class 0.000 claims abstract description 39
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 21
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000008367 deionised water Substances 0.000 claims abstract description 11
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 11
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910001431 copper ion Inorganic materials 0.000 claims abstract description 10
- 239000006179 pH buffering agent Substances 0.000 claims abstract description 5
- -1 nitrogen-containing heterocyclic compound Chemical class 0.000 claims description 20
- 239000008139 complexing agent Substances 0.000 claims description 15
- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical compound [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 claims description 8
- KZNICNPSHKQLFF-UHFFFAOYSA-N succinimide Chemical compound O=C1CCC(=O)N1 KZNICNPSHKQLFF-UHFFFAOYSA-N 0.000 claims description 8
- 229910021538 borax Inorganic materials 0.000 claims description 6
- UQGFMSUEHSUPRD-UHFFFAOYSA-N disodium;3,7-dioxido-2,4,6,8,9-pentaoxa-1,3,5,7-tetraborabicyclo[3.3.1]nonane Chemical compound [Na+].[Na+].O1B([O-])OB2OB([O-])OB1O2 UQGFMSUEHSUPRD-UHFFFAOYSA-N 0.000 claims description 6
- 239000006174 pH buffer Substances 0.000 claims description 6
- 239000004328 sodium tetraborate Substances 0.000 claims description 6
- 235000010339 sodium tetraborate Nutrition 0.000 claims description 6
- ONIBWKKTOPOVIA-BYPYZUCNSA-N L-Proline Chemical compound OC(=O)[C@@H]1CCCN1 ONIBWKKTOPOVIA-BYPYZUCNSA-N 0.000 claims description 4
- PVNIIMVLHYAWGP-UHFFFAOYSA-N Niacin Chemical compound OC(=O)C1=CC=CN=C1 PVNIIMVLHYAWGP-UHFFFAOYSA-N 0.000 claims description 4
- ONIBWKKTOPOVIA-UHFFFAOYSA-N Proline Natural products OC(=O)C1CCCN1 ONIBWKKTOPOVIA-UHFFFAOYSA-N 0.000 claims description 4
- TVDSBUOJIPERQY-UHFFFAOYSA-N prop-2-yn-1-ol Chemical compound OCC#C TVDSBUOJIPERQY-UHFFFAOYSA-N 0.000 claims description 4
- 229910000030 sodium bicarbonate Inorganic materials 0.000 claims description 4
- 235000017557 sodium bicarbonate Nutrition 0.000 claims description 4
- 229960002317 succinimide Drugs 0.000 claims description 4
- RWQNBRDOKXIBIV-UHFFFAOYSA-N thymine Chemical compound CC1=CNC(=O)NC1=O RWQNBRDOKXIBIV-UHFFFAOYSA-N 0.000 claims description 4
- YIROYDNZEPTFOL-UHFFFAOYSA-N 5,5-Dimethylhydantoin Chemical compound CC1(C)NC(=O)NC1=O YIROYDNZEPTFOL-UHFFFAOYSA-N 0.000 claims description 3
- 150000001298 alcohols Chemical class 0.000 claims description 3
- 238000007664 blowing Methods 0.000 claims description 3
- JZCCFEFSEZPSOG-UHFFFAOYSA-L copper(II) sulfate pentahydrate Chemical group O.O.O.O.O.[Cu+2].[O-]S([O-])(=O)=O JZCCFEFSEZPSOG-UHFFFAOYSA-L 0.000 claims description 3
- WJRBRSLFGCUECM-UHFFFAOYSA-N hydantoin Chemical compound O=C1CNC(=O)N1 WJRBRSLFGCUECM-UHFFFAOYSA-N 0.000 claims description 3
- 229940091173 hydantoin Drugs 0.000 claims description 3
- 238000003756 stirring Methods 0.000 claims description 3
- HYZJCKYKOHLVJF-UHFFFAOYSA-N 1H-benzimidazole Chemical compound C1=CC=C2NC=NC2=C1 HYZJCKYKOHLVJF-UHFFFAOYSA-N 0.000 claims description 2
- KUACEAQCCKPFFY-UHFFFAOYSA-N CCCOCC#CC(O)(O)OCCC Chemical compound CCCOCC#CC(O)(O)OCCC KUACEAQCCKPFFY-UHFFFAOYSA-N 0.000 claims description 2
- KRKNYBCHXYNGOX-UHFFFAOYSA-K Citrate Chemical compound [O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O KRKNYBCHXYNGOX-UHFFFAOYSA-K 0.000 claims description 2
- RGHNJXZEOKUKBD-SQOUGZDYSA-M D-gluconate Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O RGHNJXZEOKUKBD-SQOUGZDYSA-M 0.000 claims description 2
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 claims description 2
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 claims description 2
- HNDVDQJCIGZPNO-YFKPBYRVSA-N L-histidine Chemical compound OC(=O)[C@@H](N)CC1=CN=CN1 HNDVDQJCIGZPNO-YFKPBYRVSA-N 0.000 claims description 2
- UIIMBOGNXHQVGW-DEQYMQKBSA-M Sodium bicarbonate-14C Chemical compound [Na+].O[14C]([O-])=O UIIMBOGNXHQVGW-DEQYMQKBSA-M 0.000 claims description 2
- DFPAKSUCGFBDDF-ZQBYOMGUSA-N [14c]-nicotinamide Chemical compound N[14C](=O)C1=CC=CN=C1 DFPAKSUCGFBDDF-ZQBYOMGUSA-N 0.000 claims description 2
- 229940001468 citrate Drugs 0.000 claims description 2
- OPQARKPSCNTWTJ-UHFFFAOYSA-L copper(ii) acetate Chemical compound [Cu+2].CC([O-])=O.CC([O-])=O OPQARKPSCNTWTJ-UHFFFAOYSA-L 0.000 claims description 2
- SXTLQDJHRPXDSB-UHFFFAOYSA-N copper;dinitrate;trihydrate Chemical compound O.O.O.[Cu+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O SXTLQDJHRPXDSB-UHFFFAOYSA-N 0.000 claims description 2
- 229940071106 ethylenediaminetetraacetate Drugs 0.000 claims description 2
- 229940050410 gluconate Drugs 0.000 claims description 2
- HNDVDQJCIGZPNO-UHFFFAOYSA-N histidine Natural products OC(=O)C(N)CC1=CN=CN1 HNDVDQJCIGZPNO-UHFFFAOYSA-N 0.000 claims description 2
- 235000001968 nicotinic acid Nutrition 0.000 claims description 2
- 239000011664 nicotinic acid Substances 0.000 claims description 2
- 229960003512 nicotinic acid Drugs 0.000 claims description 2
- 229940095064 tartrate Drugs 0.000 claims description 2
- 229940113082 thymine Drugs 0.000 claims description 2
- 229960002429 proline Drugs 0.000 claims 2
- 235000013930 proline Nutrition 0.000 claims 2
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 claims 1
- 150000002009 diols Chemical class 0.000 claims 1
- 229960002885 histidine Drugs 0.000 claims 1
- 235000014304 histidine Nutrition 0.000 claims 1
- YZULHOOBWDXEOT-UHFFFAOYSA-N n,n-diethylpentan-1-amine Chemical compound CCCCCN(CC)CC YZULHOOBWDXEOT-UHFFFAOYSA-N 0.000 claims 1
- 239000000203 mixture Substances 0.000 abstract description 8
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 abstract description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 abstract description 3
- 239000005416 organic matter Substances 0.000 abstract description 3
- 239000000243 solution Substances 0.000 description 30
- 238000007747 plating Methods 0.000 description 16
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 8
- 239000011148 porous material Substances 0.000 description 7
- 230000008021 deposition Effects 0.000 description 6
- 239000000654 additive Substances 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 230000009467 reduction Effects 0.000 description 5
- 230000002378 acidificating effect Effects 0.000 description 4
- 230000000875 corresponding effect Effects 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000005238 degreasing Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000003112 inhibitor Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 230000002195 synergetic effect Effects 0.000 description 2
- HOJNTURFDYKGQO-UHFFFAOYSA-N 1-(diethylamino)pent-2-yne-1,1-diol Chemical compound C(C)N(CC)C(C#CCC)(O)O HOJNTURFDYKGQO-UHFFFAOYSA-N 0.000 description 1
- JJLJMEJHUUYSSY-UHFFFAOYSA-L Copper hydroxide Chemical compound [OH-].[OH-].[Cu+2] JJLJMEJHUUYSSY-UHFFFAOYSA-L 0.000 description 1
- 239000005750 Copper hydroxide Substances 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical group CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000010351 charge transfer process Methods 0.000 description 1
- 239000000306 component Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 229910001956 copper hydroxide Inorganic materials 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 239000013067 intermediate product Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 150000003071 polychlorinated biphenyls Chemical class 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000011946 reduction process Methods 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
- H05K3/188—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by direct electroplating
Definitions
- the invention belongs to the technical field of electronic electroplating, and specifically relates to a low copper salt weakly alkaline electronic electroplating copper liquid used for dense filling of copper in blind holes of PCB and an electroplating method.
- PCB printed circuit board
- PCB is one of the core components of all electronic systems. It can be used as a carrier for many devices (such as integrated circuits, resistors, capacitors and inductors, etc.) and is known as the "mother of electronic products".
- As one of the most basic hole structures in PCB blind holes need to be densely filled with metal without pores to achieve high-quality interconnection of internal and external circuits.
- Metal copper has high electromigration resistance, excellent thermal conductivity (401W ⁇ m -1 K -1 ) and electrical conductivity (1.67 ⁇ cm), so it is used as a filler metal. Acid sulfate electroplating of copper is the most common process for achieving void-free filling of blind vias.
- an electronic electroplating copper solution that is different from the acidic sulfate electronic electroplating copper solution, is suitable for dense filling of blind holes, and has the characteristics of simple plating solution composition, low copper salt concentration, weak alkalinity, low corrosiveness, and easy control. liquid, which has important industrial application value.
- the purpose of the present invention is to overcome the shortcomings of the prior art and provide a low-copper salt weakly alkaline electronic electroplating copper solution for dense copper filling of blind holes in PCBs.
- Another object of the present invention is to provide an electroplating method based on the above-mentioned low copper salt weakly alkaline electronic electroplating copper liquid.
- a low-copper salt weakly alkaline electronic electroplating copper solution for densely filling PCB blind hole copper consisting of deionized water, inorganic divalent copper salt, complexing agent, pH buffering agent and leveling agent, wherein,
- the inorganic divalent copper salt is copper sulfate pentahydrate, copper nitrate trihydrate or anhydrous copper acetate. Its concentration in the low copper salt weakly alkaline electronic electroplating copper solution is 20-50g/L, and the divalent copper salt The concentration of ions is 5.1-17.6g/L,
- the complexing agent is at least one of gluconate, tartrate, citrate or ethylenediaminetetraacetate, and its molar ratio to the divalent copper ion is 2-6:1,
- the pH buffer is composed of sodium tetraborate and sodium bicarbonate, and the concentration of the sum of sodium tetraborate and sodium bicarbonate in the low copper salt weakly alkaline electronic electroplating copper solution is 24-60g/L,
- the leveling agent is composed of a nitrogen-containing heterocyclic compound and an acetylenic alcohol compound in a mass ratio of 10:1-4, and the nitrogen-containing heterocyclic compound and the acetylenic alcohol compound are added to the low copper salt weakly alkaline electronic electroplating copper liquid.
- concentrations in are 4-20g/L and 0.4-8g/L respectively.
- the concentration of the complexing agent in the low copper salt weakly alkaline electronic electroplating copper liquid is 29.5-554.4g/L.
- the mass ratio of the sodium tetraborate and the sodium bicarbonate is 1-5:1.
- the nitrogen-containing heterocyclic compound is benzimidazole, thymine, succinimide, hydantoin, dimethylhydantoin, nicotinic acid, nicotinamide, At least one of histidine and proline.
- the nitrogen-containing heterocyclic compound is succinimide, dimethylhydantoin or proline.
- the acetylenic alcohol compound is at least one of butynediol, dipropoxybutynediol, propargyl alcohol and diethylaminopentynediol.
- the acetylenic alcohol compound is butynediol or propargyl alcohol.
- An electroplating method for dense copper filling of blind holes in PCB applying the above-mentioned low copper salt weak alkaline electronic copper electroplating liquid.
- the method includes: adjusting the pH of the low copper salt weakly alkaline electronic electroplating copper solution to 8.0-10.5, setting the temperature to 25-65°C, and stirring, blowing air or
- the cathode movement is:, and different currents are set for three time periods in sequence for electroplating. .
- the plating time and current in the three time periods are:
- additives In acidic systems, commonly used additives are inhibitors, accelerators and leveling agents.
- the three additives have complex functions. Acidic systems require inhibitors and accelerators to achieve high-quality copper filling.
- the complexing agent used in the present invention can greatly improve the dispersion ability of the plating solution, and it is restored to charge transfer control and is not affected by diffusion. Levelers significantly affect the copper deposition process. The regulation of convection diffusion of the leveling agent is based on the different adsorption amounts at the pore opening and the bottom of the pores, and the different degrees of inhibition of copper reduction.
- the leveling agent in the present invention is a nitrogen-containing heterocyclic compound and an acetylenic alcohol compound.
- the combination of the two produces a synergistic effect and enhances the influence of mass transfer and diffusion.
- the principle of synergy is: nitrogen-containing heterocyclic compounds and acetylenic alcohol compounds form a complex, which is strongly adsorbed at the pore opening and weakly adsorbed at the bottom of the pore opening, balancing the speed of copper reduction in the blind hole.
- the present invention uses organic matter containing hydroxyl and/or carboxyl groups as divalent copper ion complexing agents, combined with pH buffers and leveling agents of specific composition and content, to achieve dense filling of PCB blind holes, with simple composition and low copper salt. Concentration, weak alkalinity, low corrosiveness, easy control and other characteristics.
- the specific complexing agent in the present invention coordinates with divalent copper ions to increase the cathode reduction overpotential of copper ions and improve the dispersion and covering capabilities of the plating solution.
- the coordination agent When the mass concentration of the complexing agent is lower than 29.5g/L, the coordination agent The colocating agent cannot completely coordinate copper ions, and copper hydroxide precipitation is prone to occur; when the mass concentration of the coordinating agent is higher than 554.4g/L, the viscosity of the electronic plating solution increases and the dispersing ability decreases.
- the divalent copper ions in the present invention are controlled by the charge transfer process during the electroreduction; if the copper coordination ions are controlled by diffusion during the reduction process, the leveler in the present invention will not be able to fully exert its effect.
- the pH buffer in the present invention can stabilize the pH value at 8.0-10.5 during the electronic copper plating process. If the pH value is too high, the electroplating equipment will be corroded; if the pH value is too low, there will be a variety of copper with different structures in the electronic electroplating solution. Coordination distance The components are complex and are not conducive to the bottom-up dense filling of blind holes.
- the leveling agent in the present invention can inhibit the reduction of divalent copper coordination ions, promote the reduction of monovalent copper intermediate products, and its consumption in the electronic plating process is controlled by diffusion.
- Figure 1 is a metallographic microscope picture of PCB blind holes electroplated with copper filling in Comparative Example 1 of the present invention, with no leveling agent added and pores present.
- Figure 2 is a metallographic microscope diagram of copper-filled electroplated blind holes in PCB in Example 1 of the present invention.
- Figure 3 is a metallographic microscope picture of copper-filled electroplated blind holes in PCB in Example 2 of the present invention.
- Figure 4 is a metallographic microscope diagram of copper-filled electroplated blind holes in PCB in Example 3 of the present invention.
- the specific preparation process of the low copper salt weakly alkaline electronic electroplating copper liquid used for dense filling of PCB blind hole copper is as follows (taking the preparation of 1000mL as an example):
- the electroplating process flow for dense copper filling of PCB blind holes is as follows (taking a blind hole plating workpiece with a hole diameter of 100 ⁇ m and a hole depth of 50 ⁇ m as an example):
- Degreasing is to remove grease from the surface of electroplated workpieces to prevent contaminants from affecting electroplating.
- the oil removal step is to use Na 2 CO 3 with a concentration of 20 g/L and Na 3 PO 4 at a concentration of 50 g/L at a temperature of 50-70°C and soak the oil for 5 minutes. After degreasing, wash the electroplated workpiece several times with deionized water to rinse away the deposited dirt on the surface of the workpiece to be electroplated.
- an electroplating workpiece with 1000mL of electronic plating solution, a blind hole diameter of 100 ⁇ m, and a hole depth of 50 ⁇ m as an example; using the above-mentioned low copper salt weakly alkaline electronic electroplating copper solution and its electroplating method, pure copper plates, phosphorus-containing copper plates, and insoluble
- the iridium-coated titanium mesh is used as the anode
- the PCB board with electroless copper conductive treatment is used as the cathode.
- Electroplating is performed using mass transfer methods such as stirring, air blowing or cathode movement, which can achieve dense filling of blind holes with copper.
- the invention discloses a low-copper salt weakly alkaline electronic electroplating copper liquid and its application, which is composed of deionized water, inorganic divalent copper salt, complexing agent, pH buffering agent and leveling agent.
- the invention uses organic matter containing hydroxyl and/or carboxyl groups as divalent copper ion complexing agents, combined with pH buffers and leveling agents of specific composition and content, to achieve dense filling of PCB blind holes, with simple composition, low copper salt concentration, and weak It has the characteristics of alkalinity, low corrosion, easy control and high-precision photolithography process, and has industrial practicality.
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electroplating And Plating Baths Therefor (AREA)
Abstract
Disclosed in the present invention are a low-copper-salt weakly-alkaline electronic copper electroplating liquid and a use thereof. The low-copper-salt weakly-alkaline electronic copper electroplating liquid is composed of deionized water, an inorganic bivalent copper salt, a coordination agent, a pH buffering agent, and a leveling agent. According to the present invention, an organic matter containing hydroxyl and/or carboxyl serves as a bivalent copper ion coordination agent, and the pH buffering agent and the leveling agent which have specific compositions and content are used, such that compact filling of a PCB blind hole is achieved; and the present invention has the characteristics of being simple in composition, low in copper salt concentration, weakly-alkaline, low in corrosivity, and easy to regulate and control.
Description
本申请要求2022年6月24日向中国国家知识产权局,申请号为:202210732337.6,发明创造名称是:“一种用于PCB盲孔铜致密填充的低铜盐弱碱性电子电镀铜液及其应用”的中国专利申请为基础,并主张其优先权,该中国专利申请的公开内容在此作为整体引入本申请文本中。This application is required to be filed with the State Intellectual Property Office of China on June 24, 2022. The application number is: 202210732337.6. The name of the invention is: “A low copper salt weakly alkaline electronic electroplating copper liquid for dense filling of PCB blind hole copper and its Application" is based on the Chinese patent application and claims its priority. The disclosure content of the Chinese patent application is hereby incorporated into the text of this application as a whole.
本发明属于电子电镀技术领域,具体涉及一种用于PCB盲孔铜致密填充的低铜盐弱碱性电子电镀铜液及电镀方法。The invention belongs to the technical field of electronic electroplating, and specifically relates to a low copper salt weakly alkaline electronic electroplating copper liquid used for dense filling of copper in blind holes of PCB and an electroplating method.
印制电路板(PCB)产业在全球电子产品制造供应链中占据重要的地位。PCB是所有电子系统的核心部件之一,可作为众多器件(如集成电路、电阻、电容和电感等)的载体,被誉为“电子产品之母”。盲孔作为PCB中最基本的孔结构之一,需被金属无孔隙致密填充以实现内外线路的高质量互连。金属铜拥有较高的抗电迁移能力、优良的导热(401W·m-1K-1)和导电性(1.67μΩ·cm),故被作为填充金属。酸性硫酸盐电子电镀铜是实现盲孔无孔隙填充的最常用工艺。The printed circuit board (PCB) industry occupies an important position in the global electronic product manufacturing supply chain. PCB is one of the core components of all electronic systems. It can be used as a carrier for many devices (such as integrated circuits, resistors, capacitors and inductors, etc.) and is known as the "mother of electronic products". As one of the most basic hole structures in PCB, blind holes need to be densely filled with metal without pores to achieve high-quality interconnection of internal and external circuits. Metal copper has high electromigration resistance, excellent thermal conductivity (401W·m -1 K -1 ) and electrical conductivity (1.67μΩ·cm), so it is used as a filler metal. Acid sulfate electroplating of copper is the most common process for achieving void-free filling of blind vias.
本领域公知,PCB盲孔因其特殊的几何结构,电流在孔内和孔表面分布不均匀。铜在孔表面沉积速率高于孔底部沉积速率,导致孔口快速封闭或孔内形成空洞。为实现无孔隙致密填充,现有技术普遍采用的具有高铜盐浓度的酸性镀铜液(五水硫酸铜180g/L以上),其中需要添加各种低浓度添加剂(低于100mg/L,如抑制剂、加速剂和整平剂)。但是,由于各添加剂消耗速率不同,且协同作用复杂,添加剂及其浓度变化难以精确调控,且伴随产生的高浓度的硫酸极其容易腐蚀设备。因此,发明一种不同于酸性硫酸盐电子电镀铜液,适用于盲孔致密填充,且具有镀液成分简单、低铜盐浓度、弱碱性、低腐蚀性、易于调控等特点的电子电镀铜液,具有重要的工业应用价值。
It is known in the art that due to the special geometric structure of PCB blind holes, current is unevenly distributed in the holes and on the hole surface. The deposition rate of copper on the surface of the hole is higher than the deposition rate at the bottom of the hole, resulting in the rapid closure of the hole or the formation of voids in the hole. In order to achieve dense filling without pores, the acidic copper plating solution with high copper salt concentration (copper sulfate pentahydrate 180g/L or more) is commonly used in the existing technology, in which various low-concentration additives need to be added (less than 100mg/L, such as inhibitors, accelerators and levelers). However, due to the different consumption rates of each additive and the complex synergistic effects, it is difficult to precisely control the additives and their concentration changes, and the accompanying high-concentration sulfuric acid is extremely easy to corrode equipment. Therefore, it is necessary to invent an electronic electroplating copper solution that is different from the acidic sulfate electronic electroplating copper solution, is suitable for dense filling of blind holes, and has the characteristics of simple plating solution composition, low copper salt concentration, weak alkalinity, low corrosiveness, and easy control. liquid, which has important industrial application value.
发明内容Contents of the invention
本发明目的在于克服现有技术缺陷,提供一种用于PCB盲孔铜致密填充的低铜盐弱碱性电子电镀铜液。The purpose of the present invention is to overcome the shortcomings of the prior art and provide a low-copper salt weakly alkaline electronic electroplating copper solution for dense copper filling of blind holes in PCBs.
本发明的另一目的在于提供基于上述低铜盐弱碱性电子电镀铜液的电镀方法。Another object of the present invention is to provide an electroplating method based on the above-mentioned low copper salt weakly alkaline electronic electroplating copper liquid.
本发明的技术方案如下:The technical solution of the present invention is as follows:
一种用于PCB盲孔铜致密填充的低铜盐弱碱性电子电镀铜液,由去离子水、无机二价铜盐、配位剂、pH缓冲剂和整平剂组成,其中,A low-copper salt weakly alkaline electronic electroplating copper solution for densely filling PCB blind hole copper, consisting of deionized water, inorganic divalent copper salt, complexing agent, pH buffering agent and leveling agent, wherein,
无机二价铜盐,为五水硫酸铜、三水硝酸铜或无水醋酸铜,其在所述低铜盐弱碱性电子电镀铜液中的浓度为20-50g/L,且二价铜离子的浓度为5.1-17.6g/L,The inorganic divalent copper salt is copper sulfate pentahydrate, copper nitrate trihydrate or anhydrous copper acetate. Its concentration in the low copper salt weakly alkaline electronic electroplating copper solution is 20-50g/L, and the divalent copper salt The concentration of ions is 5.1-17.6g/L,
配位剂,为葡萄糖酸盐、酒石酸盐、柠檬酸盐或乙二胺四乙酸盐中的至少一种,其与所述二价铜离子的摩尔比为2-6:1,The complexing agent is at least one of gluconate, tartrate, citrate or ethylenediaminetetraacetate, and its molar ratio to the divalent copper ion is 2-6:1,
pH缓冲剂,由四硼酸钠和碳酸氢钠组成,且所述四硼酸钠和碳酸氢钠的总和在所述低铜盐弱碱性电子电镀铜液中的浓度为24-60g/L,The pH buffer is composed of sodium tetraborate and sodium bicarbonate, and the concentration of the sum of sodium tetraborate and sodium bicarbonate in the low copper salt weakly alkaline electronic electroplating copper solution is 24-60g/L,
整平剂,由含氮杂环化合物和炔醇类化合物以10:1-4的质量比组成,且含氮杂环化合物和炔醇类化合物在所述低铜盐弱碱性电子电镀铜液中的浓度分别4-20g/L和0.4-8g/L。The leveling agent is composed of a nitrogen-containing heterocyclic compound and an acetylenic alcohol compound in a mass ratio of 10:1-4, and the nitrogen-containing heterocyclic compound and the acetylenic alcohol compound are added to the low copper salt weakly alkaline electronic electroplating copper liquid. The concentrations in are 4-20g/L and 0.4-8g/L respectively.
在本发明的一个优选实施方案中,所述配位剂在所述低铜盐弱碱性电子电镀铜液中的浓度为29.5-554.4g/L。In a preferred embodiment of the present invention, the concentration of the complexing agent in the low copper salt weakly alkaline electronic electroplating copper liquid is 29.5-554.4g/L.
在本发明的一个优选实施方案中,所述四硼酸钠和所述碳酸氢钠的质量比为1-5:1。In a preferred embodiment of the present invention, the mass ratio of the sodium tetraborate and the sodium bicarbonate is 1-5:1.
在本发明的一个优选实施方案中,所述含氮杂环化合物为苯并咪唑、胸腺嘧啶、丁二酰亚胺、乙内酰脲、二甲基乙内酰脲、烟酸、烟酰胺、组氨酸和脯氨酸中的至少一种。In a preferred embodiment of the present invention, the nitrogen-containing heterocyclic compound is benzimidazole, thymine, succinimide, hydantoin, dimethylhydantoin, nicotinic acid, nicotinamide, At least one of histidine and proline.
进一步优选的,所述含氮杂环化合物为丁二酰亚胺、二甲基乙内酰脲或脯氨酸。Further preferably, the nitrogen-containing heterocyclic compound is succinimide, dimethylhydantoin or proline.
在本发明的一个优选实施方案中,所述炔醇类化合物为丁炔二醇、二丙氧基丁炔二醇、丙炔醇和二乙氨基戊炔二醇中的至少一种。In a preferred embodiment of the present invention, the acetylenic alcohol compound is at least one of butynediol, dipropoxybutynediol, propargyl alcohol and diethylaminopentynediol.
进一步优选的,所述炔醇类化合物为丁炔二醇或丙炔醇。Further preferably, the acetylenic alcohol compound is butynediol or propargyl alcohol.
一种用于PCB盲孔铜致密填充的电镀方法,应用上述低铜盐弱碱性电子电镀铜
液。An electroplating method for dense copper filling of blind holes in PCB, applying the above-mentioned low copper salt weak alkaline electronic copper electroplating liquid.
在本发明的一个优选实施方案中,包括:将所述低铜盐弱碱性电子电镀铜液的pH调节至8.0-10.5,设定温度为25-65℃以及传质方式搅拌、鼓空气或阴极移动为:,并设定依次三个时间段不同的电流进行电镀。。In a preferred embodiment of the present invention, the method includes: adjusting the pH of the low copper salt weakly alkaline electronic electroplating copper solution to 8.0-10.5, setting the temperature to 25-65°C, and stirring, blowing air or The cathode movement is:, and different currents are set for three time periods in sequence for electroplating. .
进一步优选的,所述三个时间段的电镀时间、电流为:Further preferably, the plating time and current in the three time periods are:
a、0.2-0.5A/dm2、5-20min;b、0.8-1.2A/dm2、20-40min;c、1.8-2.2A/dm2、30-50min。a. 0.2-0.5A/dm 2 , 5-20min; b. 0.8-1.2A/dm 2 , 20-40min; c. 1.8-2.2A/dm 2 , 30-50min.
在酸性体系中,常用的添加剂为抑制剂、加速剂和整平剂,三种添加剂作用复杂。酸性体系中需要搭配抑制剂和加速剂,才能实现高质量的铜填充。本发明使用的配位剂,能够大幅度提高镀液分散能力,且其还原为传荷控制,不受扩散影响。整平剂显著影响铜沉积过程。整平剂对流扩散的调控是在孔口、孔底部吸附量不同,抑制铜还原程度不同。In acidic systems, commonly used additives are inhibitors, accelerators and leveling agents. The three additives have complex functions. Acidic systems require inhibitors and accelerators to achieve high-quality copper filling. The complexing agent used in the present invention can greatly improve the dispersion ability of the plating solution, and it is restored to charge transfer control and is not affected by diffusion. Levelers significantly affect the copper deposition process. The regulation of convection diffusion of the leveling agent is based on the different adsorption amounts at the pore opening and the bottom of the pores, and the different degrees of inhibition of copper reduction.
本发明中整平剂为含氮杂环化合物和炔醇类化合物,二者结合发生协同作用,增强其受传质扩散的影响。协同的原理是:含氮杂环化合物和炔醇类化合物形成复合物,强吸附于孔口,弱吸附于孔口底部,平衡铜还原在盲孔中的速度。由此,本发明实现了下述有益效果:The leveling agent in the present invention is a nitrogen-containing heterocyclic compound and an acetylenic alcohol compound. The combination of the two produces a synergistic effect and enhances the influence of mass transfer and diffusion. The principle of synergy is: nitrogen-containing heterocyclic compounds and acetylenic alcohol compounds form a complex, which is strongly adsorbed at the pore opening and weakly adsorbed at the bottom of the pore opening, balancing the speed of copper reduction in the blind hole. Thus, the present invention achieves the following beneficial effects:
1、本发明以含羟基和/或羧基有机物为二价铜离子配位剂,结合特定组成和含量的pH缓冲剂、整平剂,可实现PCB盲孔致密填充,具有组成简单、低铜盐浓度、弱碱性、低腐蚀性、易于调控等特点。1. The present invention uses organic matter containing hydroxyl and/or carboxyl groups as divalent copper ion complexing agents, combined with pH buffers and leveling agents of specific composition and content, to achieve dense filling of PCB blind holes, with simple composition and low copper salt. Concentration, weak alkalinity, low corrosiveness, easy control and other characteristics.
2、本发明中特定的配位剂与二价铜离子配位,增加铜离子阴极还原过电位,提高镀液分散能力和覆盖能力,当配位剂质量浓度低于29.5g/L时,配位剂无法完全配位铜离子,易出现氢氧化铜沉淀;当配位剂质量浓度高于554.4g/L时,电子电镀液粘度增加,分散能力下降,此外,本发明中的二价铜离子与该配位剂配位形成的铜配位离子在电还原中受电荷转移过程控制;若铜配位离子还原过程中受扩散控制,会使得本发明中的整平剂无法充分发挥其作用。2. The specific complexing agent in the present invention coordinates with divalent copper ions to increase the cathode reduction overpotential of copper ions and improve the dispersion and covering capabilities of the plating solution. When the mass concentration of the complexing agent is lower than 29.5g/L, the coordination agent The colocating agent cannot completely coordinate copper ions, and copper hydroxide precipitation is prone to occur; when the mass concentration of the coordinating agent is higher than 554.4g/L, the viscosity of the electronic plating solution increases and the dispersing ability decreases. In addition, the divalent copper ions in the present invention The copper coordination ions formed by coordination with the complexing agent are controlled by the charge transfer process during the electroreduction; if the copper coordination ions are controlled by diffusion during the reduction process, the leveler in the present invention will not be able to fully exert its effect.
3、本发明中的pH缓冲剂能够使得pH值在电子电镀铜过程中稳定于8.0-10.5,pH值过高,腐蚀电镀设备;pH值过低,电子电镀液中存在多种不同结构的铜配位离
子,成分复杂,不利于盲孔自下而上致密填充。3. The pH buffer in the present invention can stabilize the pH value at 8.0-10.5 during the electronic copper plating process. If the pH value is too high, the electroplating equipment will be corroded; if the pH value is too low, there will be a variety of copper with different structures in the electronic electroplating solution. Coordination distance The components are complex and are not conducive to the bottom-up dense filling of blind holes.
4、本发明中的整平剂能够抑制二价铜配位离子还原,促进一价铜中间产物还原、且其在电子电镀过程中的消耗受扩散控制。4. The leveling agent in the present invention can inhibit the reduction of divalent copper coordination ions, promote the reduction of monovalent copper intermediate products, and its consumption in the electronic plating process is controlled by diffusion.
图1为本发明对比例1中未加入整平剂,存在孔隙,PCB盲孔电镀铜填充金相显微镜图。Figure 1 is a metallographic microscope picture of PCB blind holes electroplated with copper filling in Comparative Example 1 of the present invention, with no leveling agent added and pores present.
图2为本发明实施例1中PCB盲孔电镀铜填充金相显微镜图。Figure 2 is a metallographic microscope diagram of copper-filled electroplated blind holes in PCB in Example 1 of the present invention.
图3为本发明实施例2中PCB盲孔电镀铜填充金相显微镜图。Figure 3 is a metallographic microscope picture of copper-filled electroplated blind holes in PCB in Example 2 of the present invention.
图4为本发明实施例3中PCB盲孔电镀铜填充金相显微镜图。Figure 4 is a metallographic microscope diagram of copper-filled electroplated blind holes in PCB in Example 3 of the present invention.
以下通过具体实施方式结合附图对本发明的技术方案进行进一步的说明和描述。实施例1~3及对比例1The technical solution of the present invention will be further illustrated and described below through specific embodiments and in conjunction with the accompanying drawings. Examples 1 to 3 and Comparative Example 1
用于PCB盲孔铜致密填充的低铜盐弱碱性电子电镀铜液具体配制过程如下(以配制1000mL为例):The specific preparation process of the low copper salt weakly alkaline electronic electroplating copper liquid used for dense filling of PCB blind hole copper is as follows (taking the preparation of 1000mL as an example):
①根据20~50g/L无机铜盐和29.5~554.4g/L配位剂的物质浓度要求,分别准确称量相应重量的无机铜盐和配位剂,预先溶解于500mL去离子水中,获得溶液A;①According to the material concentration requirements of 20~50g/L inorganic copper salt and 29.5~554.4g/L complexing agent, accurately weigh the corresponding weight of inorganic copper salt and complexing agent respectively, and dissolve them in 500mL deionized water in advance to obtain a solution A;
②根据24~60g/L的物质浓度要求,准确称量相应重量的pH缓冲剂,预先溶解于200mL去离子水中,获得溶液B;②According to the substance concentration requirement of 24 to 60g/L, accurately weigh the corresponding weight of pH buffer and dissolve it in 200mL of deionized water in advance to obtain solution B;
③根据4~20g/L含氮杂环化合物和0.4~8g/L炔醇类化合物的物质浓度要求,预先准确称量相应重量的含氮杂环化合物和炔醇类化合物,溶解于200mL去离子水中,获得溶液C;③According to the material concentration requirements of 4-20g/L nitrogen-containing heterocyclic compounds and 0.4-8g/L acetylenic alcohol compounds, accurately weigh the corresponding weight of nitrogen-containing heterocyclic compounds and acetylenic alcohol compounds in advance, and dissolve them in 200 mL of deionized In water, solution C is obtained;
④将上述溶液B和溶液C分别缓慢加入至溶液A中,并用质量浓度为10%的硫酸或硝酸或醋酸水溶液和质量浓度为10%氢氧化钾水溶液调节混合溶液的pH值,使pH值稳定在8.0~10.5范围内;之后用去离子水将上述混合溶液定容至1000mL,获得所述低铜盐弱碱性电子电镀铜液。
④Slowly add the above solution B and solution C to solution A respectively, and adjust the pH value of the mixed solution with a 10% mass concentration of sulfuric acid or nitric acid or acetic acid aqueous solution and a mass concentration of 10% potassium hydroxide aqueous solution to stabilize the pH value. In the range of 8.0 to 10.5; then use deionized water to adjust the volume of the above mixed solution to 1000 mL to obtain the low copper salt weakly alkaline electronic electroplating copper solution.
进一步地,用于PCB盲孔铜致密填充的电镀工艺流程如下(以孔径100μm,孔深50μm盲孔电镀工件为例):Furthermore, the electroplating process flow for dense copper filling of PCB blind holes is as follows (taking a blind hole plating workpiece with a hole diameter of 100 μm and a hole depth of 50 μm as an example):
除油(50~70℃,5min)→去离子水洗→5%稀硫酸活化、超声(30s)→去离子水洗→电镀液中预浸(3min)→电子电镀铜(120min)→钝化处理(1min)。Degreasing (50~70℃, 5min) → deionized water washing → 5% dilute sulfuric acid activation, ultrasonic (30s) → deionized water washing → pre-soaking in plating solution (3min) → electronic copper plating (120min) → passivation treatment ( 1min).
除油是为了清除电镀工件表面油脂,避免该污染物会影响电镀。具体地,除油步骤是在50-70℃温度下,采用浓度为20g/L的Na2CO3,50g/L的Na3PO4,浸泡液除油5分钟。除油后,用去离子水对电镀工件水洗多次,冲洗待电镀工件表面的沉积污物。经水洗后,再用质量浓度5%稀硫酸浸泡和活化,超声30秒,使用工件表面增加活性,再用去离子水洗涤,除去酸以减少对电镀液PH值的影响。Degreasing is to remove grease from the surface of electroplated workpieces to prevent contaminants from affecting electroplating. Specifically, the oil removal step is to use Na 2 CO 3 with a concentration of 20 g/L and Na 3 PO 4 at a concentration of 50 g/L at a temperature of 50-70°C and soak the oil for 5 minutes. After degreasing, wash the electroplated workpiece several times with deionized water to rinse away the deposited dirt on the surface of the workpiece to be electroplated. After washing with water, soak and activate it with dilute sulfuric acid with a mass concentration of 5%, ultrasonic for 30 seconds, use the surface of the workpiece to increase activity, and then wash with deionized water to remove the acid to reduce the impact on the pH value of the plating solution.
具体地,以1000mL电子电镀液,盲孔孔径100μm,孔深50μm的电镀工件为例;采用上述配置的低铜盐弱碱性电子电镀铜液及其电镀方法,以纯铜板、含磷铜板、不溶性涂铱钛网为阳极,以化学镀铜导电化处理的PCB板为阴极,采用搅拌、鼓空气或阴极移动的传质方式进行电镀,能够实现盲孔铜致密填充。具体的电子电镀液组成、实施条件及获得填充效果如下表1和图1~图4所示:当电子电镀液中未加入整平剂时,孔口铜沉积速率高于孔底部铜沉积速率,导致盲孔填充封口,存在孔洞。当电子电镀液中加入整平剂时,孔口铜沉积速率低于孔底部铜沉积速率,可实现盲孔致密填充。Specifically, take an electroplating workpiece with 1000mL of electronic plating solution, a blind hole diameter of 100 μm, and a hole depth of 50 μm as an example; using the above-mentioned low copper salt weakly alkaline electronic electroplating copper solution and its electroplating method, pure copper plates, phosphorus-containing copper plates, and insoluble The iridium-coated titanium mesh is used as the anode, and the PCB board with electroless copper conductive treatment is used as the cathode. Electroplating is performed using mass transfer methods such as stirring, air blowing or cathode movement, which can achieve dense filling of blind holes with copper. The specific electronic plating solution composition, implementation conditions and filling effect are shown in Table 1 and Figures 1 to 4 below: When no leveling agent is added to the electronic plating solution, the copper deposition rate at the hole mouth is higher than the copper deposition rate at the bottom of the hole. As a result, blind holes are filled and sealed, leaving holes. When a leveling agent is added to the electronic plating solution, the copper deposition rate at the hole mouth is lower than the copper deposition rate at the bottom of the hole, allowing dense filling of blind holes.
表1实施例1~3和对比例1中1000mL电镀液配方及相应效果
Table 1 1000mL electroplating solution formula and corresponding effects in Examples 1 to 3 and Comparative Example 1
Table 1 1000mL electroplating solution formula and corresponding effects in Examples 1 to 3 and Comparative Example 1
以上所述,仅为本发明的较佳实施例而已,故不能依此限定本发明实施的范围,即依本发明专利范围及说明书内容所作的等效变化与修饰,皆应仍属本发明涵盖的范围内。The above are only preferred embodiments of the present invention, and therefore cannot be used to limit the scope of the present invention. That is, equivalent changes and modifications made based on the patent scope of the present invention and the content of the specification should still be covered by the present invention. In the range.
本发明公开了一种低铜盐弱碱性电子电镀铜液及其应用,由去离子水、无机二价铜盐、配位剂、pH缓冲剂和整平剂组成。本发明以含羟基和/或羧基有机物为二价铜离子配位剂,结合特定组成和含量的pH缓冲剂、整平剂,实现PCB盲孔致密填充,具有组成简单、低铜盐浓度、弱碱性、低腐蚀性、易于调控等特点,高精度的光刻工艺,具有工业实用性。
The invention discloses a low-copper salt weakly alkaline electronic electroplating copper liquid and its application, which is composed of deionized water, inorganic divalent copper salt, complexing agent, pH buffering agent and leveling agent. The invention uses organic matter containing hydroxyl and/or carboxyl groups as divalent copper ion complexing agents, combined with pH buffers and leveling agents of specific composition and content, to achieve dense filling of PCB blind holes, with simple composition, low copper salt concentration, and weak It has the characteristics of alkalinity, low corrosion, easy control and high-precision photolithography process, and has industrial practicality.
Claims (9)
- 一种用于PCB盲孔铜致密填充的低铜盐弱碱性电子电镀铜液,其特征在于:由去离子水、无机二价铜盐、配位剂、pH缓冲剂和整平剂组成,其中:A low-copper salt weakly alkaline electronic electroplating copper solution for densely filling PCB blind hole copper, which is characterized in that: it is composed of deionized water, inorganic divalent copper salt, complexing agent, pH buffering agent and leveling agent. in:无机二价铜盐,为五水硫酸铜、三水硝酸铜或无水醋酸铜,其在所述低铜盐弱碱性电子电镀铜液中的浓度为20-50g/L,且其中二价铜离子的浓度为5.1-17.6g/L;The inorganic divalent copper salt is copper sulfate pentahydrate, copper nitrate trihydrate or anhydrous copper acetate. Its concentration in the low copper salt weakly alkaline electronic electroplating copper solution is 20-50g/L, and the divalent copper salt is 20-50g/L. The concentration of copper ions is 5.1-17.6g/L;配位剂,为葡萄糖酸盐、酒石酸盐、柠檬酸盐或乙二胺四乙酸盐中的至少一种,其所述二价铜离子的摩尔比为2-6:1;The complexing agent is at least one of gluconate, tartrate, citrate or ethylenediaminetetraacetate, and the molar ratio of the divalent copper ions is 2-6:1;pH缓冲剂,由四硼酸钠和碳酸氢钠组成,且所述四硼酸钠和所述碳酸氢钠的总和在所述低铜盐弱碱性电子电镀铜液中的浓度为24-60g/L;The pH buffer is composed of sodium tetraborate and sodium bicarbonate, and the concentration of the sum of the sodium tetraborate and the sodium bicarbonate in the low copper salt weakly alkaline electronic electroplating copper solution is 24-60g/L ;整平剂,由含氮杂环化合物和炔醇类化合物以10:1-4的质量比组成,且所述含氮杂环化合物和所述炔醇类化合物在所述低铜盐弱碱性电子电镀铜液中的浓度分别4-20g/L和0.4-8g/L。The leveling agent is composed of a nitrogen-containing heterocyclic compound and an acetylenic alcohol compound in a mass ratio of 10:1-4, and the nitrogen-containing heterocyclic compound and the acetylenic alcohol compound are weakly alkaline in the low copper salt. The concentrations in the electronic electroplating copper solution are 4-20g/L and 0.4-8g/L respectively.
- 如权利要求1所述的低铜盐弱碱性电子电镀铜液,其特征在于:所述配位剂在所述低铜盐弱碱性电子电镀铜液中的浓度为29.5-554.4g/L。The low copper salt weakly alkaline electronic electroplating copper liquid according to claim 1, characterized in that: the concentration of the complexing agent in the low copper salt weakly alkaline electronic electroplating copper liquid is 29.5-554.4g/L. .
- 如权利要求1所述的低铜盐弱碱性电子电镀铜液,其特征在于:所述四硼酸钠和所述碳酸氢钠的质量比为1-5:1。The low copper salt weakly alkaline electronic electroplating copper liquid according to claim 1, characterized in that: the mass ratio of the sodium tetraborate and the sodium bicarbonate is 1-5:1.
- 如权利要求1所述的低铜盐弱碱性电子电镀铜液,其特征在于:所述含氮杂环化合物为苯并咪唑、胸腺嘧啶、丁二酰亚胺、乙内酰脲、二甲基乙内酰脲、烟酸、烟酰胺、组氨酸和脯氨酸中的至少一种。The low copper salt weakly alkaline electronic electroplating copper solution as claimed in claim 1, characterized in that: the nitrogen-containing heterocyclic compound is benzimidazole, thymine, succinimide, hydantoin, dimethyl at least one of hydantoin, nicotinic acid, nicotinamide, histidine and proline.
- 如权利要求4所述的低铜盐弱碱性电子电镀铜液,其特征在于:所述含氮杂环化合物为丁二酰亚胺、二甲基乙内酰脲或脯氨酸。The low copper salt weakly alkaline electronic electroplating copper liquid according to claim 4, wherein the nitrogen-containing heterocyclic compound is succinimide, dimethylhydantoin or proline.
- 如权利要求1所述的低铜盐弱碱性电子电镀铜液,其特征在于:所述炔醇类化合物为丁炔二醇、二丙氧基丁炔二醇、丙炔醇和二乙氨基戊炔二醇中的至少一种。The low copper salt weakly alkaline electronic electroplating copper solution as claimed in claim 1, characterized in that: the acetylenic alcohol compounds are butynediol, dipropoxybutynediol, propargyl alcohol and diethylaminopentane At least one acetylenic diol.
- 如权利要求6所述的一种低铜盐弱碱性电子电镀铜液,其特征在于:所述炔醇类化合物为丁炔二醇或丙炔醇。A low copper salt weakly alkaline electronic electroplating copper solution as claimed in claim 6, characterized in that: the acetylenic alcohol compound is butynediol or propargyl alcohol.
- 一种用于PCB盲孔铜致密填充的电镀方法,其特征在于:应用权利要求1至7中任一权利要求所述的低铜盐弱碱性电子电镀铜液,并将所述低铜盐弱碱性电子电镀铜液的pH调节至8.0-10.5,设定温度为25-65℃以及传质方式为:搅拌、鼓空气或阴极 移动,并设定依此三个时间段不同的电流进行电镀。An electroplating method for dense copper filling of PCB blind holes, characterized in that: applying the low copper salt weakly alkaline electronic electroplating copper liquid according to any one of claims 1 to 7, and adding the low copper salt The pH of the weakly alkaline electronic electroplating copper solution is adjusted to 8.0-10.5, the set temperature is 25-65°C, and the mass transfer method is: stirring, air blowing or cathode Move, and set different currents for electroplating according to these three time periods.
- 如权利要求8所述的电镀方法,其特征在于:所述三个时间段中电镀控制的电流、时长依次为:a、0.2-0.5A/dm2、5-20min;b、0.8-1.2A/dm2、20-40min;c、1.8-2.2A/dm2、30-50min。 The electroplating method according to claim 8, characterized in that: the current and duration of electroplating control in the three time periods are: a, 0.2-0.5A/dm 2 , 5-20min; b, 0.8-1.2A /dm 2 , 20-40min; c, 1.8-2.2A/dm 2 , 30-50min.
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JP2007138265A (en) * | 2005-11-21 | 2007-06-07 | C Uyemura & Co Ltd | Electrolytic copper plating bath |
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CN112941575A (en) * | 2021-01-27 | 2021-06-11 | 厦门大学 | Copper salt alkalescent electroplating solution for PCB hole metallization and application thereof |
CN115142099A (en) * | 2022-06-24 | 2022-10-04 | 厦门大学 | Low-copper-salt alkalescent electronic copper electroplating solution for dense filling of PCB blind hole copper and application thereof |
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JP2007138265A (en) * | 2005-11-21 | 2007-06-07 | C Uyemura & Co Ltd | Electrolytic copper plating bath |
KR20150078689A (en) * | 2013-12-31 | 2015-07-08 | 삼성정밀화학 주식회사 | a copper plating solution containing pyridinium leveler and copper plating method using the same |
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CN110499501A (en) * | 2019-10-08 | 2019-11-26 | 苏州天承化工有限公司 | A kind of chemical bronze plating liquid and preparation method thereof and blind hole processing method |
CN112941575A (en) * | 2021-01-27 | 2021-06-11 | 厦门大学 | Copper salt alkalescent electroplating solution for PCB hole metallization and application thereof |
CN115142099A (en) * | 2022-06-24 | 2022-10-04 | 厦门大学 | Low-copper-salt alkalescent electronic copper electroplating solution for dense filling of PCB blind hole copper and application thereof |
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